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In this paper we will discuss the performance of delta-doped CCDs in UV and EUV, our in-house thinning capability, bonding approaches for producing flat focal plane arrays, and in-house capabilities of directly applied antireflection coatings.
We report on the continued development of multilayer optical coatings on back-illuminated silicon imaging sensors in order to enhance the functionality of such systems at ultraviolet wavelengths. This includes the development metal-dielectric filter structures to enable solar-blind operation, and graded thickness coatings to tune the spatial response of a detector system to the dispersion of a spectrometer. Such systems can maintain the high internal quantum efficiency afforded by the delta-doping process utilized at NASA JPL, while also providing long-wavelength rejection or a spatially optimized efficiency (or both). We present the characterization of CCD and CMOS image sensors incorporating these processes, and describe the atomic layer deposition coating processes. Such detectors are currently being developed for ground-based high energy physics applications as well as NASA orbital astrophysics instruments operating at wavelengths shorter than 200 nm.
The contribution of more than one carrier to the conductivity in modulation-doped field effect transistors (MODFET) affects the resultant mobility and complicates the characterization of these devices. Mixed conduction arises from the population of several subbands in the two-dimensional electron gas (2DEG), as well as the presence of a parallel path outside the 2DEG. We characterized GaAs/AlGaAs MODFET structures with both delta and continuous doping in the barrier. Based on simultaneous Hall and conductivity analysis we conclude that the parallel conduction is taking place in the AlGaAs barrier, as indicated by the carrier freezeout and activation energy. Thus, simple Hall analysis of these structures may lead to erroneous conclusions, particularly for real-life device structures. The distribution of the 2D electrons between the various confined subbands depends on the doping profile. While for a continuously doped barrier the Shubnikov-de Haas analysis shows superposition of two frequencies for concentrations below 10(exp 12) cm(exp -2), for a delta doped structure the superposition is absent even at 50% larger concentrations. This result is confirmed by self-consistent analysis, which indicates that the concentration of the second subband hardly increases.
The perovskite composition, BaCe(sub 0.85)Y(sub 0.15)O(sub 3-delta), displays excellent protonic conduction at high temperatures making it a desirable candidate for hydrogen separation membranes. This paper reports on the sintering behavior of BaCe(sub 0.85)Y(sub 0.15)O(sub 3-delta) powders doped with SrTiO3. Two methods were used to synthesize BaCe(sub 0.85)Y(sub 0.15)O(sub 3-delta) powders: (1) solid state reaction and (2) wet chemical co-precipitation. Co-precipitated powder crystallized into the perovskite phase at 1000 C for 4 hrs. Complete reaction and crystallization of the perovskite phase by solid state was achieved by calcining at 1200 C for 24 hrs. Solid state synthesis produced a coarser powder with an average particle size of 1.3 microns and surface area of 0.74 sq m/g. Co-precipitation produced a finer powder with a average particle size of 65 nm and surface area of 14.9 sq m/g. Powders were doped with 1, 2, 5, and 10 mole % SrTiO3. Samples were sintered at 1450 C, 1550 C and 1650 C. SrTiO3 enhances sintering, optimal dopant level is different for powders synthesized by solid state and co-precipitation. Both powders exhibit similar grain growth behavior. Dopant levels of 5 and 10 mole % SrTiO3 significantly enhances the grain size.
An ultra-low-temperature process for homoepitaxial growth of high-quality, surface-confined, Sb-doped silicon layers is presented. Non-equilibrium growth by molecular beam epitaxy (MBE) is used to achieve dopant incorporation in excess of 2x10(exp 14) per sq cm in a thin, surface-confined layer. Sb surface segregation larger than expected from theoretical models was observed, in agreement with other experimental works. Furthermore, this work details an entirely low-temperature process (less than 450 degree C) that can be applied to fully processed and aluminum-metallized silicon devices. One application of this process is the formation of a back-surface electrode for back-illuminated high-purity silicon imaging arrays.
A versatile post-fabrication process to produce thinned, flat, back-illuminated CCDs is being developed at Jet Propulsion Laboratory's Microdevices Laboratory.
A study of the magnetic and structural properties of the alloy Y(1-x)Pr(x)Ba2Cu3O(7-delta) of 0%, 2%, and 4% doping of praseodymium is presented. The resulting oxides of the alloy series are a high-temperature superconductor Y-Ba-Cu-O, which has an orthorhombic superconducting crystal-lattice. Magnetic relaxation studies have been performed on the Y-Pr-Ba-CuO bulk samples for field orientation parallel to the c-axis, using a vibrating sample magnetometer. Relaxation was measured at several temperatures to obtain the irreversible magnetization curves used for the Bean model. Magnetization current densities were derived from the relaxation data. Field and temperature dependence of the logarithmic flux-creep relaxation was measured in critical state. The data indicates that the effective activation energy U(eff) increases with increasing T between 77 K and 86 K. Also, the data shows that U(eff)(T) and superconducting transition temperature, Tc, decreased as the lattice parameters increased with increasing Pr ion concentration, x, for the corresponding Y(1-x)Pr(x)Ba(x)Cu3O(7-delta) oxides. One contribution to Tc decrease in this sampling is suspected to be due to the larger ionic radius of the Pr(3+) ion. The upper critical field (H(sub c2)) was measured in the presence of magnetic field parallel to the c axis. A linear temperature dependence with H(sub c2) was obtained.
The effects of F content on the Tc of superconducting YBa2Cu3F(x)O(6.5+delta-0.5x) (x = 0.0165-1.65) prepared by the solid-state reaction method (Bandsahl and Sandkuhl, 1988) are investigated experimentally. The results are presented in tables and graphs and characterized. Tc is found to increase steadily from 90.8 to 93.4 K as x is increased from 0.0165 to 0.066, but to decrease as x is further increased (Tc = 90.3 K at x = 1.65). The structure of the samples with x = 0.066 or lower is found to be single-phase perovskite.
The effect of three dopants directed at the oxygen sites in Y1Ba2Cu3O(7-delta) have been investigated: sulfur, fluorine, and chlorine. Single-phase material has been obtained up to a (nominal) replacement of about 1 percent of the oxygen. Although the lattice parameters are unchanged, all dopants raise Tc (very slightly), sharpen the resistive transition, reduce the normal state resistivity, and very substantially increase the (magnetically determined) fraction of the material that is superconducting. All of these results differ qualitatively from those obtained with dopants directed at other locations in the 123 structure, and it is suggested that small additions of sulfur, fluorine, or chlorine may help to stabilize the ideal 123 stoichiometry.
The temperature dependence of the emitter saturation current for bipolar devices was studied by varying the surface recombination velocity at the emitter surface. From this dependence, the value was derived for bandgap narrowing that is in better agreement with other determinations that were obtained from the temperature dependence measure on devices with ohmic contacts. Results of the first direct measurement of the minority-carrier transit time in a transparent heavily doped emitter layer were reported. The value was obtained by a high-frequency conductance method recently developed and used for doped Si. Experimental evidence is presented for significantly greater charge storage in highly excited silicon near room temperature than conventional theory would predict. These data are compared with various data for delta E sub G in heavily doped silicon.
Stable transform-limited (delta nu-delta tau = 0.32) femtosecond pulses with a FWHM of 50 fs were generated from a self-mode-locked chromium-doped forsterite laser. The forsterite laser was synchronously pumped by a CW mode-locked Nd:YAG (82 MHz) laser that generated picosecond pulses (200-300 ps) and provided the starting mechanism for self-mode-locked operation. Maximum output power was 45 mW for 3.9 W of absorbed pumped power with the use of an output coupler with 1 percent transmission. The self-mode-locked forsterite laser was tuned from 1240 to 1270 nm.
Gadolinia-doped ceria, or GDC, (Gd(0.4)Ce(0.6)O(2-delta), where the value of delta in this material varies, depending on the temperature and oxygen concentration in the atmosphere in which it is being used) has shown promise as a cathode material for high-temperature electrolysis of carbon dioxide in solid oxide electrolysis cells. The polarization resistance of a GDC electrode is significantly less than that of an otherwise equivalent electrode made of any of several other materials that are now in use or under consideration for use as cathodes for reduction of carbon dioxide. In addition, GDC shows no sign of deterioration under typical temperature and gas-mixture operating conditions of a high-temperature electrolyzer. Electrolysis of CO2 is of interest to NASA as a way of generating O2 from the CO2 in the Martian atmosphere. On Earth, a combination of electrolysis of CO2 and electrolysis of H2O might prove useful as a means of generating synthesis gas (syngas) from the exhaust gas of a coal- or natural-gas-fired power plant, thereby reducing the emission of CO2 into the atmosphere. The syngas a mixture of CO and H2 could be used as a raw material in the manufacture, via the Fisher-Tropsch process, of synthetic fuels, lubrication oils, and other hydrocarbon prod
The valence electronic structure and core levels of Tl2Ba2CuO(6 + delta) (Tl-2201) epitaxial films have been measured with X-ray photoelectron spectroscopy and are compared to those of Tl2Ba2CaCu2O(8 + delta) (Tl-2212). Changes in the Tl-2201 core-level binding energies with oxygen doping are consistent with a change in the chemical potential. Differences between the Tl-2201 and Tl-2212 measured densities of states are consistent with the calculated Cu 3d and Tl 6s partial densities of states.
The kinetics of yield point return have been studied in two NiAl-based alloys as a function of aging time at temperatures between 300 and 700 K. The results indicate that the upper yield stress increment, Delta sigma(sub u) (i.e., stress difference between the upper yield point and the final flow stress achieved during prestraining), in conventional purity (CP-NiAl) and in high purity carbon-doped (NiAl-C) material first increased with a t(exp 2/3) relationship before reaching a plateau. This behavior suggests that a Cottrell locking mechanism is the cause for yield points in NiAl. In addition, positive y-axis intercepts were observed in plots of Delta sigma(sub u) versus t(exp 2/3) suggesting the operation of a Snoek mechanism. Analysis according to the Cottrell Bilby model of atmosphere formation around dislocations yields an activation energy for yield point return in the range 70 to 76 kJ/mol which is comparable to the activation energy for diffusion of interstitial impurities in bcc metals. It is, thus, concluded that the kinetics of static strain aging in NiAl are controlled by the locking of dislocations by Cottrell atmospheres of carbon atoms around dislocations.
We report measurements of gold circuits fabricated on four Ba(x)Sr(1-x)TiO3 films doped with 1% Mn grown on MgO substrates by laser ablation. Low frequency measurements of epsilon(sub r) and tan(delta) on interdigital capacitors are compared with high frequency measurements of phase shift and insertion loss on coupled microstrip phase shifters done on the same films. The variation in temperature of both high and low frequency device parameters is compared. Annealed and unannealed films are compared. Room temperature figures of merit of phase shift per insertion loss of up to 58.4 C/dB at 18 GHz and 400 V dc bias were measured.
The GaAs/AlGaAs based Quantum Well Infrared Photodetectors (QWIPs) afford greater flexibility than the usual extrinsically doped semiconductor IR detectors because the wavelength of the peak response and cutoff can be continuously tailored over any wavelength between 6-20 micrometers. The spectral band width of these detectors can be tuned from narrow (DELTA)lamba/lamba approx. 10 %)) to wide (DELTA)lamba/lamba approx. 50 %) allowing various applications. Also, QWIP offers multi-color infrared cameras which is capable of simultaneously acquiring images in different infrared bands. Each pixel of such array consists of vertically stacked, independently readable, QWIP detectors sensitive in different narrow infrared bands. In this article, we discuss the development and results of the 640 x 512 dual-band and four-band QWIP FPAs.
Bolometer system and method for detecting, at BLIP levels, presence of radiation over a broad range of wavelengths in an infrared spectrum and in a temperature range from 20 K to as high as room temperature. The radiation is received by a Si crystal having a region that is doped with one or more of In, Ga, S, Se, Te, B, Al, P, As and Sb in a concentration ratio in a range such as 5 x 10(exp -11) to 5 x 10(exp -6). Change in electrical resistance delta R due to receipt of the radiation is measured through a change in voltage difference or current within the crystal, and the quantity delta R is converted to an estimate of the amount of radiation received. Optionally, incident radiation having an energy high enough to promote photoconductivity is removed before detection.
The 800 C oxidation of oriented single crystals of Zr doped beta-NiAl was studied using transmission electron microscopy. The oxide phases and metal-oxide orientation relationships were determined to characterize the transient stages of oxidation prior to the transformation to or formation of alpha-Al2O3. On (001) and (012) metal orientations, NiAl2O4 was the first oxide to form followed by delta-Al2O3 which becomes the predominant oxide phase. All oxides were highly epitaxially related to the metal; the orientation relationships being function of parallel cation close-packed directions in the meta and oxide. On (011) and (111) metal orientations, gamma-Al2O3 became the predominant oxide phase rather than delta-Al2O3, indicating a structural stability from the highly epitaxial oxides. The relative concentration of aluminum in the oxide scales increased with time indicating preferential gamma-or delta-Al2O3 growth. The striking feature common to the orientation relationships is the alignment of 100 m and 110 ox directions, believed to result from the minimal 3 percent mismatch between the corresponding (100)m and (110)ox planes.