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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
NASA NTRS1999

Surface Design and Engineering Toward Wear-Resistant, Self-Lubricant Diamond Films and Coatings

This chapter describes three studies on the surface design, surface engineering, and tribology of chemical-vapor-deposited (CVD) diamond films and coatings toward wear-resistant, self-lubricating diamond films and coatings. Friction mechanisms and solid lubrication mechanisms of CVD diamond are stated. Effects of an amorphous hydrogenated carbon on CVD diamond, an amorphous, nondiamond carbon surface layer formed on CVD diamond by carbon and nitrogen ion implantation, and a materials combination of cubic boron nitride and CVD diamond on the adhesion, friction, and wear behaviors of CVD diamond in ultrahigh vacuum are described. How surface modification and the selected materials couple improved the tribological functionality of coatings, giving low coefficient of friction and good wear resistance, is explained.

Miyoshi, Kazuhisa↗
NASA NTRS1990

Diamond Coatings

Advances in materials technology have demonstrated that it is possible to get the advantages of diamond in a number of applications without the cost penalty, by coating and chemically bonding an inexpensive substrate with a thin film of diamond-like carbon (DLC). Diamond films offer tremendous technical and economic potential in such advances as chemically inert protective coatings; machine tools and parts capable of resisting wear 10 times longer; ball bearings and metal cutting tools; a broad variety of optical instruments and systems; and consumer products. Among the American companies engaged in DLC commercialization is Diamonex, Inc., a diamond coating spinoff of Air Products and Chemicals, Inc. Along with its own proprietary technology for both polycrystalline diamond and DLC coatings, Diamonex is using, under an exclusive license, NASA technology for depositing DLC on a substrate. Diamonex is developing, and offering commercially, under the trade name Diamond Aegis, a line of polycrystalline diamond-coated products that can be custom tailored for optical, electronic and engineering applications. Diamonex's initial focus is on optical products and the first commercial product is expected in late 1990. Other target applications include electronic heat sink substrates, x-ray lithography masks, metal cutting tools and bearings.

Source record↗
NASA NTRS2004

Very High Efficiency, Miniaturized, Long-Lived Alpha Particle Power Source Using Diamond Devices for Extreme Space Environments

A power source that converts a-particle energy into electricity by coulomb collision in doped diamond films is described. Alpha particle decay from curium-244 creates electron-hole pairs by free- ing electrons and holes inside the crystal lattice in N- and P-doped diamond films. Ohmic contacts provide electrical connection to an electronic device. Due to the built-in electric field at the rectifying junction across the hT- and P-doped diamond films, the free electrons are constrained to traveling in generally one direction. This one direction then supplies electrons in a manner similar to that of a battery. The radioactive curium layer may be disposed on diamond films for even distribution of a-particle radiation. The resulting power source may be mounted on a diamond substrate that serves to insulate structures below the diamond substrate from a-particle emission. Additional insulation or isolation may be provided in order to prevent damage from a-particle collision. N-doped silicon may be used instead of N-doped diamond.

Elizabeth A Kolawa↗
NASA NTRS2010

Diamond Heat-Spreader for Submillimeter-Wave Frequency Multipliers

The planar GaAs Shottky diode frequency multiplier is a critical technology for the local oscillator (LO) for submillimeter- wave heterodyne receivers due to low mass, tenability, long lifetime, and room-temperature operation. The use of a W-band (75-100 GHz) power amplifier followed by a frequency multiplier is the most common for submillimeter-wave sources. Its greatest challenge is to provide enough input power to the LO for instruments onboard future planetary missions. Recently, JPL produced 800 mW at 92.5 GHz by combining four MMICs in parallel in a balanced configuration. As more power at W-band is available to the multipliers, their power-handling capability be comes more important. High operating temperatures can lead to degradation of conversion efficiency or catastrophic failure. The goal of this innovation is to reduce the thermal resistance by attaching diamond film as a heat-spreader on the backside of multipliers to improve their power-handling capability. Polycrystalline diamond is deposited by hot-filament chemical vapor deposition (CVD). This diamond film acts as a heat-spreader to both the existing 250- and 300-GHz triplers, and has a high thermal conductivity (1,000-1,200 W/mK). It is approximately 2.5 times greater than copper (401 W/mK) and 20 times greater than GaAs (46 W/mK). It is an electrical insulator (resistivity approx. equals 10(exp 15) Ohms-cm), and has a low relative dielectric constant of 5.7. Diamond heat-spreaders reduce by at least 200 C at 250 mW of input power, compared to the tripler without diamond, according to thermal simulation. This superior thermal management provides a 100-percent increase in power-handling capability. For example, with this innovation, 40-mW output power has been achieved from a 250-GHz tripler at 350-mW input power, while the previous triplers, without diamond, suffered catastrophic failures. This breakthrough provides a stepping-stone for frequency multipliers-based LO up to 3 THz. The future work for this design is to apply the high output power from both the 250 and 300 GHz to multiple chains in order to generate milliwatts at 2.3 THz. Using the first generation of results for this innovation, 40 mW of output power were produced from a 240-GHz tripler at 350-mW input power, and 27- mW output power was produced from a 300-GHz tripler at 408-mW input power. This is two times higher than the current state-of-the-art output power capability. A finite-element thermal simulation also shows that 30-microns thick diamond dropped the temperature of the anodes by at least 200 C.

Lin, Robert H.↗
NASA NTRS2014

Diamond Synthesis Employing Nanoparticle Seeds

Iron nanoparticles were employed to induce the synthesis of diamond on molybdenum, silicon, and quartz substrates. Diamond films were grown using conventional conditions for diamond synthesis by hot filament chemical vapor deposition, except that dispersed iron oxide nanoparticles replaced the seeding. This approach to diamond induction can be combined with dip pen nanolithography for the selective deposition of diamond and diamond patterning while avoiding surface damage associated to diamond-seeding methods.

Uppireddi, Kishore↗
DOE OSTI2026

Sub-melt nanosecond pulsed-laser induced densification and strain-field relaxation in single-crystal diamond

Dislocations and polishing-induced defect networks in synthetic diamond introduce local strain fields and broaden Raman features, limiting performance in optical, thermal, and electronic applications. Laser annealing is emerging as a promising approach to repair surface and near-surface defects in diamond without entering the melt regime, yet surface densification, defect-state modification, and associated structural changes have not been well quantified. In this work, we show that sub-melt nanosecond pulsed-laser annealing (PLA) induces near-surface densification and defect-mediated strain relaxation in single-crystal Chemical Vapor Deposition (CVD) diamond. Single- and two-pulse PLA were applied, and structural evolution was quantified using co-registered ISO 25,178 white-light interferometry, depth-resolved Raman spectroscopy, and cross-sectional STEM with geometric phase analysis (GPA). Across a 5 × 6 grid (n = 30), responsive regions exhibit large reductions in local slope (Sdq 45–65%), developed area (Sdr 60–90%), height spread (Sp, Sz 30–65%), void volume (Vv 57–60%), and roughness amplitude (Sa, Sq 48–57%), consistent with densification of ∼4–6.5 nm. Raman profiling shows narrowing of the diamond line and improved spectral uniformity to depths of ∼2–3 μm. Given that the Raman probing depth significantly exceeds the densified layer thickness, this response is interpreted as consistent with long-range strain-field redistribution originating from the near-surface region. STEM-GPA strain maps further support this interpretation, showing smoother strain fields, suppressed hotspots, and redistribution of localized strain concentrations following PLA. These results are consistent with defect-mediated strain relaxation and densification-driven modification of the near-surface energy state. The approach provides a scalable pathway for improving near-surface structural quality in diamond relevant to electronic, photonic, and quantum applications.

Areal surface metrology (ISO 25,178)↗
DOE OSTI2025

Inelastic deformation of diamond single crystals shock compressed to multimegabar stresses: Wave profile calculations

As the archetypal strong solid, the response of diamond shock compressed to multimegabar stresses is important for fundamental science and for numerical simulations of wave profiles for applications in high energy density physics experiments. Previous experiments and analysis have shown that the commonly used hydrodynamic assumption is invalid for diamond shock compressed to stresses below melt and an elastic–inelastic description is needed. Here, we present a phenomenological material model for calculating wave profiles in shock compressed diamond single crystals that incorporates this description. Also, to support the modeling effort, we carried out wave profile measurements on shock compressed diamond single crystals at the Sandia Z facility to augment previous measurements. Wave profiles for [100] and [111] diamond calculated using the material model provide a good match to the elastic–inelastic response (observed two-wave structure) measured at ∼325 and ∼360 GPa. Furthermore, the calculated peak stresses for single (overdriven) waves provide a good match to the measured Hugoniot states for stresses reaching ∼700 GPa, which is near melting conditions. The present results show that the diamond single crystal response at multimegabar shock stresses is characteristic of a brittle solid—pressure-dependent strength and strength loss due to inelastic deformation.

Deformation↗
DOE OSTI2025

Scintillation light detection in polycrystalline diamond using single photon detectors

Here, this study investigates the scintillation properties of polycrystalline diamond for particle detection applications, particularly in neutron and alpha radiation environments. Polycrystalline diamonds provide a cost-effective alternative to monocrystalline diamonds while retaining essential detection properties. Photoluminescence measurements were performed to analyze emission spectra, revealing distinct characteristics based on impurity content and crystallinity. Scintillation responses were assessed using Silicon Photomultipliers (SiPMs), demonstrating the capability of polycrystalline diamond powders to respond to alpha irradiation, albeit with reduced resolution compared to traditional scintillators. A prototype neutron detector was developed by combining diamond powder with neutron-sensitive 6 LiF, and its performance was evaluated through experimental testing and Geant4 simulations. The findings indicate that polycrystalline diamond-based detectors can achieve significant detection efficiency while remaining insensitive to gamma radiation, offering potential for portable neutron detection applications.

47 OTHER INSTRUMENTATION↗
DOE OSTI2025

Electronic Spin Relaxation and Clustering in High-Pressure High-Temperature Synthesized Microcrystalline Diamond Particles with Reduced Nitrogen Content

The negatively charged nitrogen-vacancy (NV – ) color center in diamonds is widely studied because of numerous applications of this unique quantum system in sensing and quantum information sciences. While substitutional nitrogen is required to form the NV – centers in diamond, it also yields other paramagnetic defects─primarily the neutrally charged substitutional nitrogen centers (P1)─that decrease NV – spin coherence, which in turn degrades performance in applications. Herein, we investigate high-pressure high-temperature synthesized diamond microparticles (ca. 140–185 μm) having lower─ranging from 3 to 38 ppm─than the typical nitrogen content of type 1b diamond ( ca. 100 ppm and higher) typically used for the production of fluorescent diamond particles with NV – centers. A suite of electron paramagnetic resonance, optically detected magnetic resonance, and nuclear magnetic resonance methods are used to characterize spin properties of P1 and NV – centers in the particles. Upon decreasing the nitrogen content from 29 to 3 ppm, the ensemble NV – T 2 relaxation time increased by about 3-fold as measured directly in the Hahn Echo experiment at magnetic field of 1.2 T. Analysis of electronic relaxation of P1 centers revealed the existence of at least two distinct populations of P1 centers, consisting of fast and slower relaxing spins and allowed for an estimation of local concentrations. Even with <10 ppm nitrogen contents, the analysis indicated a highly heterogeneous distribution of P1 centers, suggesting the possibility of P1 spin clustering even at low nitrogen concentrations. The combined data demonstrate that the particles prepared from HPHT diamond with a low nitrogen content offer improved spin properties that are beneficial for NV – sensing applications.

Carbon↗
DOE OSTI2024

Improving the creation of SiV centers in diamond via sub-μs pulsed annealing treatment

Silicon-vacancy (SiV) centers in diamond are emerging as promising quantum emitters in applications such as quantum communication and quantum information processing. Here, we demonstrate a sub-μs pulsed annealing treatment that dramatically increases the photoluminescence of SiV centers in diamond. Using a silane-functionalized adamantane precursor and a laser- heated diamond anvil cell, the temperature and energy conditions required to form SiV centers in diamond were mapped out via an optical thermometry system with an accuracy of ±50 K and a 1 μs temporal resolution. Annealing scheme studies reveal that pulsed annealing can obviously minimize the migration of SiV centers out of the diamond lattice, and a 2.5-fold increase in the number of emitting centers was achieved using a series of 200-ns pulses at a 50 kHz repetition rate via acousto-optic modulation. Our study provides a novel pulsed annealing treatment approach to improve the efficiency of the creation of SiV centers in diamond.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Metastability and Ostwald step rule in the crystallisation of diamond and graphite from molten carbon

Abstract Experimental challenges in determining the phase diagram of carbon at temperatures and pressures near the graphite-diamond-liquid triple point are often related to the persistence of metastable crystalline or glassy phases, superheated crystals, or supercooled liquids. A deeper understanding of the crystallisation kinetics of diamond and graphite is crucial for effectively interpreting the outcomes of these experiments. Here, we reveal the microscopic mechanisms of diamond and graphite nucleation from liquid carbon through molecular simulations with first-principles machine learning potentials. Our simulations accurately reproduce the experimental phase diagram of carbon near the triple point and show that liquid carbon crystallises spontaneously upon cooling. Metastable graphite crystallises in the domain of diamond thermodynamic stability at pressures above the triple point. Furthermore, whereas diamond crystallises through a classical nucleation pathway, graphite follows a two-step process in which low-density fluctuations forego ordering. Calculations of the nucleation rates of the two competing phases confirm this result and reveal a manifestation of Ostwald’s step rule, where the strong metastability of graphite hinders the transformation to the stable diamond phase. Our results provide a key to interpreting melting and recrystallisation experiments and shed light on nucleation kinetics in polymorphic materials with deep metastable states.

Science & Technology - Other Topics↗
DOE OSTI2026

Plasma-assisted atomic layer etching of single-crystal diamond

Applications of near-surface nitrogen-vacancy (NV) centers in diamond are often limited by surface defects created during processing. Understanding and controlling plasma-induced surface damage is important for preserving the optical and spin properties of diamond NV centers. We report molecular dynamics simulations of a novel form of plasma-aided atomic layer etching of diamond. In this proposed scheme, the initial surface modification step consists of Ar + ion bombardment. This creates an amorphous layer at the surface, the thickness of which is controlled by the ion energy. Amorphization is known to help smooth the surface, at least locally, and would also serve to sputter clean an initially contaminated surface. A second step impacts the amorphous carbon layer with O + between about 1 and 5 eV. Simulations show that this energy range will remove the amorphous carbon but will not etch the underlying diamond. Though this energy range is not trivial to achieve in a conventional low-temperature plasma, potential methods for creating these low-energy O + ions are discussed. In addition to a-C etching, the O + impacts are predicted to remove any isolated (100) diamond terraces by selectively attacking the edges of the terraces. The proposed atomic layer etching (ALE) approach reverses the conventional ALE sequence in which the surface modification step is usually chemical modification (oxidation in this case), followed by a removal step using Ar + impacts. This plasma ALE procedure is predicted to create a diamond surface that is atomically flat and defect free.

Draney, J. S. [Princeton University, NJ (United St↗
NASA NTRS1980

Adhesion and friction of single-crystal diamond in contact with transition metals

An investigation was conducted to examine the adhesion and friction of single-crystal diamond in contact with various transition metals and the nature of metal transfer to diamond. Sliding friction experiments were conducted with diamond in sliding contact with the metals yttrium, titanium, zirconium, vanadium, iron, cobalt, nickel, tungsten, platinum, rhenium and rhodium. All experiments were conducted with loads of 0.05 to 0.3 N, at a sliding velocity of 0.003 m per minute, in a vacuum of 10 to the -8th Pa, at room temperature, and on the (111) plane of diamond with sliding in the 110 line type direction. The results of the investigation indicate that the coefficient of friction for diamond in contact with various metals is related to the relative chemical activity of the metals in high vacuum. The more active the metal, the higher the coefficient of friction. All the metals examined transferred to the surface of diamond in sliding.

Miyoshi, K.↗
NASA NTRS1989

Laser damage threshold of diamond films

The possibility that diamond films may inhibit laser-induced damage to optical components in laser systems films was investigated by measuring laser damage thresholds of free-standing diamond film windows, diamond films deposited on silicon substrates, and bare silicon substrate. Polycrystalline diamond films were deposited using a dc plasma-enhanced CVD process. It was found that free-standing diamond films had the highest laser damage threshold at 1064 nm. For a diamond film of 630 nm, the damage threshold was found to be 7 J/sq cm, as compared to a damage threshold of 4.5 J/sq cm for bare silicon, and a low value of 1.5 J/sq cm for the film/substrate combination. The damage mechanism is considered to involve melting or dielectric breakdown induced by laser radiation. The low value of the film/substrate combination is attributed to film stress and conditions of film deposition.

Albin, Sacharia↗
NASA NTRS1993

Laser-enhanced synthesis and processing of diamond films from liquid hydrocarbons

We report synthesis of diamond films by pulsed laser irradiation on copper substrate immersed into liquid benzene. It is envisaged that carbon released from benzene at the liquid-solid interface is converted into diamond as a result of rapid quenching from a high temperature. The diamond crystallites were characterized using high resolution transmission electron microscopy imaging and electron diffraction techniques. Growth of thicker diamond films by subsequent chemical vapor deposition has been investigated by transmission and scanning electron microscopy techniques. Thin diamond film deposited during liquid phase provided seed for diamond growth during subsequent chemical vapor deposition.

Singh, Jogender↗
NASA NTRS1991

Diamond film deposition using microwave plasmas under low pressures

Microwave plasma depositions of diamond films have been investigated under low pressures of 10 mTorr to 10 Torr, at low substrate temperatures of 400 to 750 C, using high methane concentrations of 5 to 15 percent and oxygen concentrations of 5 to 10 percent in hydrogen plasmas. The deposition system consists of a microwave plasma chamber, a downstream deposition chamber, and a RF induction-heated sample stage. The deposition system can be operated in either high-pressure microwave or electron cyclotron resonance (ECR) modes by varying the sample stage position. Cathodoluminescence (CL) studies on diamond films deposited at 10 Torr pressure show that CL emissions at 430, 480, 510, 530, 560, 570 and 740 nm can be employed to characterize the quality of diamond films. High-quality, well-faceted diamond films have been deposited at 10 Torr and 600 C using 5 percent CH4 and 5 percent O2 in H2 plasmas; CL measurements on these films show very low N impurities and no detectable Si impurities. Diamond nucleation on SiC has been demonstrated by depositing well-faceted diamond crystallites on SiC-coated Si substrates.

Shing, Y. H.↗
NASA NTRS1993

Diamond thermoluminescence properties of different chondrites

It was found that thermoluminescence (TL) glows of diamonds depend on the origin of diamonds and the chondrite metamorphism degree. The investigation of TL of diamonds was continued and the results for diamonds from Murchison CM2, Krymka LL3.0, Kainsaz CO3, and Abee E4 were considered. The diamonds synthesized by CVD-process (samples 133, 159) and by detonation from soot (DDS-B14-89) were also analyzed for comparison. Before the TL measuring samples were annealed at approximately 350 C for a few seconds and then irradiated by gamma-rays of Cs-137 up to dose approximately 200 krad. TL-measurements were performed in the air atmosphere on the standard equipment. TL data for samples are shown. TL glow for some diamonds are also presented.

Fisenko, A. V.↗
NASA NTRS1994

Investigation of nucleation and growth processes of diamond films by atomic force microscopy

The nucleation and growth of plasma-enhanced chemical-vapor deposited polycrystalline diamond films were studied using atomic force microscopy (AFM). AFM images were obtained for (1) nucleated diamond films produced from depositions that were terminated during the initial stages of growth, (2) the silicon substrate-diamond film interface side of diamond films (1-4 micrometers thick) removed from the original surface of the substrate, and (3) the cross-sectional fracture surface of the film, including the Si/diamond interface. Pronounced tip effects were observed for early-stage diamond nucleation attributed to tip convolution in the AFM images. AFM images of the film's cross section and interface, however, were not highly affected by tip convolution, and the images indicate that the surface of the silicon substrate is initially covered by a small grained polycrystalline-like film and the formation of this precursor film is followed by nucleation of the diamond film on top of this layer. X-ray photoelectron spectroscopy spectra indicate that some silicon carbide is present in the precursor layer.

George, M. A.↗