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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Direct Alpha Spectrometry of Nuclear Fallout

Advanced instruments and methods are under development to allow direct alpha spectrometry of nuclear fallout debris near the point of collection, to support nuclear forensics (NF). New approaches are needed to support NF in order to accelerate the process for data generation and reduce the overall timeline for decision making. Fallout debris at short time periods following detonation can be difficult to work with for alpha spectrometry, due to the presence of intense beta radiation originating from significant quantities of high-activity fission products. Intense beta radiation can challenge traditional silicon-based high-resolution alpha spectrometers. Addressing this, single-crystal (sc) chemical vapor deposition (CVD) produced diamond semiconductors have been studied for use for alpha spectrometry for assaying nuclear fallout debris. Tests have been performed using scCVD sensors to assay a variety of actinide-bearing samples. Sample preparation, when done, has been limited to pulverization using a mechanical ball mill. To reduce measurement times, multi-chip arrays of scCVD diamond semiconductor have been developed in form factors suitable for field deployment in support of NF objectives. These arrays have been tested using high-beta-activity sol gel surrogate nuclear explosive debris (SNED) containing varying concentrations of uranium and plutonium. Results from the use of scCVD detectors with sol gel SNED will be presented.

46 - INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AN↗
DOE OSTI2024

Characterizing novel Indium Phosphide pad detectors with focused X-ray beams and laboratory tests

Future tracking systems in High Energy Physics experiments will require large instrumented areas with low radiation length. Crystalline silicon sensors have been used in tracking systems for decades, but are difficult to manufacture and costly to produce for large areas. We are exploring alternative sensor materials that are amenable to fast fabrication techniques used for thin film devices. Indium Phosphide pad sensors were fabricated at Argonne National Lab using commercially available InP:Fe 2-inch mono-crystal substrates. Current-voltage and capacitance-voltage characterizations were performed to study the basic operating characteristics of a group of sensors. Micro-focused X-ray beams at Canadian Light Source and Diamond Light Source were used to study the response to ionizing radiation, and characterize the uniformity of the response for several devices. Electrical test results showed a high degree of performance uniformity between the 48 tested devices. X-ray test beam results showed good performance uniformity within tested devices after accounting for spatially-local defects and edge fields. As a result, this motivates further studies into thin film devices for future tracking detectors.

47 OTHER INSTRUMENTATION↗
DOE OSTI2025

Computationally guided experimental validation of divacancy defect formation in 4H-SiC

Recent research into solid-state qubits for quantum information science has focused on optically addressable spin defects such as the negatively charged nitrogen-vacancy center in diamond and the neutrally charged divacancy (VV) in 4H-SiC as scalable quantum sensors and networking qubits. Within this context, direct investigations of the structural origin and defect formation dynamics of a sub-set of the VV center in 4H-SiC remain lacking. Here, we take a systematic experimental approach guided by predictions from first-principles simulations to gain a thorough mechanistic understanding of the VV defect formation and control in 4H-SiC. We study the effect of annealing time and temperature on VV formation in high-purity semi-insulating 4H-SiC samples following electron irradiation. Three different temperatures (1123, 1273, and 1473 K) and annealing duration (from 0.5 to 72 h) are chosen to explore VV formation in different regions. We find that samples annealed at 1273 K give the highest VV-related photoluminescence (PL) intensities, in agreement with the prediction from first-principles calculations. Furthermore, the logarithmic dependence of VV-related PL intensities on the annealing duration at 1273 K indicates that 1273 K provides sufficient thermal energy for silicon vacancy migration but not for VV migration. Together, these results suggest that efficient VV formation occurs above the V Si migration temperature and below the VV migration threshold.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2024

All-optical, Microwave-free NV-Diamond Magnetometer for Weak Magnetic Field Environments

Sensitive nitrogen-vacancy (NV) magnetometry typically requires a bias field to lift the spin level degeneracy and has commonly utilized microwave sources to selectively manipulate the sensor's spin state. However, this external bias field and microwave sources may perturb the sample of interest or be incompatible with operational conditions. Here, we demonstrate an all-optical, microwave-free NV-diamond magnetometer in the presence of weak or no bias magnetic field (<20 G). We experimentally measure photoluminescence spectra using diamonds with varying NV concentrations; and numerically simulate matching features due to cross-relaxation between NVs. Our results pave the way towards a sensitive probe to study magnetic systems that can be disrupted by microwave signals and can only tolerate weak bias magnetic field.

Ung, Kristine↗
DOE OSTI2021

Materials challenges for quantum technologies based on color centers in diamond

Emerging quantum technologies require precise control over quantum systems of increasing complexity. Defects in diamond, particularly the negatively charged nitrogen-vacancy center, are a promising platform with the potential to enable technologies ranging from ultra-sensitive nanoscale quantum sensors, to quantum repeaters for long distance quantum networks, to simulators of complex dynamical processes in many-body quantum systems, to scalable quantum computers. While these advances are due in large part to the distinct material properties of diamond, the uniqueness of this material also presents difficulties, and there is a growing need for novel materials science techniques for characterization, growth, defect control, and fabrication dedicated to realizing quantum applications with diamond. In this article we identify and discuss the major materials science challenges and opportunities associated with diamond quantum technologies.

36 MATERIALS SCIENCE↗
NASA NTRS1995

Chemical Vapor-Deposited (CVD) Diamond Films for Electronic Applications

Diamond films have a variety of useful applications as electron emitters in devices such as magnetrons, electron multipliers, displays, and sensors. Secondary electron emission is the effect in which electrons are emitted from the near surface of a material because of energetic incident electrons. The total secondary yield coefficient, which is the ratio of the number of secondary electrons to the number of incident electrons, generally ranges from 2 to 4 for most materials used in such applications. It was discovered recently at the NASA Lewis Research Center that chemical vapor-deposited (CVD) diamond films have very high secondary electron yields, particularly when they are coated with thin layers of CsI. For CsI-coated diamond films, the total secondary yield coefficient can exceed 60. In addition, diamond films exhibit field emission at fields orders of magnitude lower than for existing state-of-the-art emitters. Present state-of-the-art microfabricated field emitters generally require applied fields above 5x10^7 V/cm. Research on field emission from CVD diamond and high-pressure, high-temperature diamond has shown that field emission can be obtained at fields as low as 2x10^4 V/cm. It has also been shown that thin layers of metals, such as gold, and of alkali halides, such as CsI, can significantly increase field emission and stability. Emitters with nanometer-scale lithography will be able to obtain high-current densities with voltages on the order of only 10 to 15 V.

Source record↗
DOE OSTI2026

Probing boron vacancy defects in hBN via single spin relaxometry

Spin defects in solids offer promising platforms for quantum sensing and memory due to their long coherence times and optical addressability. Here, we integrate a single nitrogen-vacancy (NV) center in diamond with scanning probe microscopy to detect, read out, and spatially map spin-based quantum sensors at the nanoscale. Using the boron vacancy ($V$$^{–}_{B}$) center in hexagonal boron nitride—an emerging two-dimensional spin system—as a model, we detect its electron spin resonance indirectly via changes in the spin relaxation time (T 1 ) of a nearby NV center, eliminating the need for optical excitation or fluorescence detection of the $V$$^{–}_{B}$. Cross-relaxation between NV and $V$$^{–}_{B}$ ensembles significantly reduces NV T1, enabling quantitative nanoscale mapping of defect densities beyond the optical diffraction limit and clear resolution of hyperfine splitting in isotopically enriched h 10 B 15 N. Our method demonstrates interactions between spin sensors in 3D and 2D materials, establishing NV centers as versatile probes for characterizing otherwise inaccessible spin defects.

Quantum metrology↗
DOE OSTI2026

High-efficiency, high-fidelity charge initialization of shallow nitrogen-vacancy centers in diamond

Nitrogen-vacancy (N-𝑉) centers in diamond exhibit long spin-coherence times, optical initialization, and optical-spin readout under ambient conditions, making them excellent quantum sensors. However, the conventional scheme for charge-state initialization based on off-resonant green excitation results in significant state-preparation errors, typically around 30%. One method for improving charge-state initialization fidelity is to use multicolor excitation, which has been demonstrated to achieve a near-unity preparation fidelity for bulk N-𝑉 centers by using a few milliseconds of near-infrared (NIR) (5-mW) and green (10-μ⁢W) excitation. The translation of such schemes to N-𝑉 centers near the diamond surface with higher-efficiency optical pumping would enable new applications in nanoscale sensing. Here, we demonstrate a protocol for efficient charge initialization of shallow N-𝑉 centers between 5 nm and 15 nm from the diamond surface. By carefully studying the charge dynamics of shallow N-𝑉 centers, we identify a region of parameter space that allows for near-unity (95%) charge initialization within 300 μ⁢s of NIR (905-nm, 1-mW) and green (520-nm, 10-μ⁢W) excitation. The time to 90% charge initialization can be as fast as 10 μ⁢s for 4 mW of NIR and 39 μ⁢W of green illumination. This fast, efficient charge initialization protocol will especially benefit nanoscale sensing applications in which state-preparation errors currently prohibit scaling, such as measuring higher-order multipoint correlators.

infrared techniques↗
DOE OSTI2023

Universal diamond edge Raman scale to 0.5 terapascal and implications for the metallization of hydrogen

The recent progress in generating static pressures up to terapascal values opens opportunities for studying novel materials with unusual properties, such as metallization of hydrogen and high-temperature superconductivity. However, an evaluation of pressure above ~0.3 terapascal is a challenge. We report a universal high-pressure scale up to ~0.5 terapascal, which is based on the shift of the Raman edge of stressed diamond anvils correlated with the equation of state of Au and does not require an additional pressure sensor. According to the new scale, the pressure values are substantially lower by 20% at ~0.5 terapascal compared to the extrapolation of the existing scales. We compare the available data of H 2 at the highest static pressures. We show that the onset of the proposed metallization of molecular hydrogen reported by different groups is consistent when corrected with the new scale and can be compared with various theoretical predictions.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Strong spin–orbit quenching via the product Jahn–Teller effect in neutral group IV qubits in diamond

Abstract Artificial atom qubits in diamond have emerged as leading candidates for a range of solid-state quantum systems, from quantum sensors to repeater nodes in memory-enhanced quantum communication. Inversion-symmetric group IV vacancy centers, comprised of Si, Ge, Sn, and Pb dopants, hold particular promise as their neutrally charged electronic configuration results in a ground-state spin triplet, enabling long spin coherence above cryogenic temperatures. However, despite the tremendous interest in these defects, a theoretical understanding of the electronic and spin structure of these centers remains elusive. In this context, we predict the ground-state and excited-state properties of the neutral group IV color centers from first principles. We capture the product Jahn–Teller effect found in the excited state manifold to second order in electron–phonon coupling, and present a nonperturbative treatment of the effect of spin–orbit coupling. Importantly, we find that spin–orbit splitting is strongly quenched due to the dominant Jahn–Teller effect, with the lowest optically-active 3 E u state weakly split into m s -resolved states. The predicted complex vibronic spectra of the neutral group IV color centers are essential for their experimental identification and have key implications for use of these systems in quantum information science.

Materials Science↗
DOE OSTI2020

Fast Relaxation on Qutrit Transitions of Nitrogen-Vacancy Centers in Nanodiamonds

Thanks to their versatility, nitrogen-vacancy (N-𝑉) centers in nanodiamonds have been widely adopted as nanoscale sensors. However, their sensitivities are limited by their short coherence times relative to N-𝑉⁢s in bulk diamond. A more complete understanding of the origins of decoherence in nanodiamonds is critical to improving their performance. Here we present measurements of fast spin relaxation on qutrit transitions between the energy eigenstates composed of the 𝑚 𝑠 =|±1⟩ states of the N-𝑉 − electronic ground state in approximately 40-nm nanodiamonds under ambient conditions. For frequency splittings between these states of 20 MHz or less the maximum theoretically achievable coherence time of the N-𝑉 spin is approximately 2 orders of magnitude shorter than would be expected if the N-𝑉 spin is treated as a qubit. We attribute this fast relaxation to electric field noise. We observe a strong falloff of the qutrit relaxation rate with the splitting between the states, suggesting that, whenever possible, measurements with N-𝑉⁢s in nanodiamonds should be performed at moderate axial magnetic fields (>60 G). We also observe that the qutrit relaxation rate changes with time. As a result, these findings indicate that surface electric field noise is a major source of decoherence for N-𝑉⁢s in nanodiamonds.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1991

Thin film diamond microstructure applications

Selective deposition and abrasion, as well as etching in atomic oxygen or reduced-pressure air, have been used to prepare patterned polycrystalline diamond films which, on further processing by anisotropic Si etching, yield the microstructures of such devices as flow sensors and accelerometers. Both types of sensor have been experimentally tested in the respective functions of hot-wire anemometer and both single- and double-hinged accelerometer.

Roppel, T.↗
NASA NTRS2013

Application of a Broadband Active Vibration Control System to a Helicopter Trim Panel

This paper discusses testing of a broadband active vibration control concept on an interior trim panel in a helicopter cabin mockup located at ONERA's Centre de Toulouse. The control system consisted of twelve diamond-shaped piezoelectric actuators distributed around a 1.2m x 1.2m trim panel. Accelerometers were mounted at the four vertices of each diamond. The aspect ratio of the diamond was based on the dielectric constants of the piezoelectric material in order to create an actuator-sensor pair that was collocated over a broad frequency range. This allowed robust control to be implemented using simple, low power analog electronics. Initial testing on a thick acrylic window demonstrated the capability of the controller, but actuator performance was less satisfactory when mounted on a composite sandwich trim panel. This may have been due to the orthotropic nature of the trim panel, or due to its much higher stiffness relative to the acrylic window. Insights gained from a finite element study of the actuator-sensor-structural system are discussed.

Cabell, Randolph H.↗
DOE OSTI2021

Displacement driven balancing of a diamond turning machine flycutter

The spindle balancing operation is critical to the performance of precision lathes and should be conducted anytime the configuration of the spindle or its tooling is modified such that an unbalanced condition may occur. Within the machine tool community, accelerometers are typically used as the feedback device during the balancing operation. At Lawrence Livermore National Laboratory (LLNL), we have nearly 40 years of history using displacement sensors, such as capacitance gauges, in place of accelerometers when balancing precision spindles. The process of balancing a precision machine spindle using displacement sensors is presented in the context of two work examples. In this case, the details of the one-dimensional balancing operation performed after replacing a flycutter on the spindles of two unique large optic diamond turning machines is discussed. The pros and cons of accelerometer driven balancing and displacement driven balancing are also presented. In the accelerometer context, the level of balance achieved for our work example is less than 100 micro-g or a total indicator reading (TIR) of 1.6 µm. The process of balancing has been enhanced over the years as advances have been made in software, data acquisition systems, and instrumentation. The balancing system is described including details about instrumentation, set-up, how phase and spindle structure stiffness is calculated, and how the LLNL developed software that guides the user through the process by suggesting corrective action.

42 ENGINEERING↗
DOE OSTI2023

Nanophotonic quantum sensing with engineered spin-optic coupling

Nitrogen vacancy centers in diamond provide a spin-based qubit system with long coherence time even at room temperature, making them suitable ambient-condition quantum sensors for quantities including electromagnetic fields, temperature, and rotation. The optically addressable level structures of NV spins allow transduction of spin information onto light-field intensity. The sub-optimal readout fidelity of conventional fluorescence measurement remains a significant drawback for room-temperature ensemble sensing. Here, we discuss nanophotonic interfaces that provide opportunities to achieve near-unity readout fidelity based on IR absorption via resonantly enhanced spin-optic coupling. Spin-coupled resonant nanophotonic devices are projected to particularly benefit applications that utilize micro- to nanoscale sensing volume and to outperform present methods in their volume-normalized sensitivity.

42 ENGINEERING↗