Plastic deformation and imperfections in crystals /summary of lecture/
Plastic deformation and imperfections in crystals
CRYSTAL STRUCTURE DEFECT↗
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Effect of hydrogen on deformation structure and properties of CMSX-2 nickel-base single-crystal superalloy
Material used in this study was a heat of the alloy CMSX-2. This nickel-based superalloy was provided in the form of oriented single crystals, solutionized for 3 hrs at 1315 C. It was then usually heat treated as follows: 1050 C/16h/air cool + 850 C/48h/air cool. The resulting microstructure is dominated by cuboidal, ordered gamma precipitates with a volume fraction of about 75% and an average size of 0.5 microns. In brief, the most compelling hydrogen induced-changes in deformation structure are: (1) enhanced dislocation accumulation in the gamma matrix; and (2) more extensive cross-slip of superdislocations in the gamma precipitates. The enhanced dislocation density in gamma acts to decrease the mean free path of a superdislocation, while easier cross slip hinders superdislocation movement by providing pinning points in the form of sessile jobs. Both processes contribute to the increase of flow stress and the notable work hardening that occurs prior to fracture.
Dollar, M.↗
Structural Transformation in Pyrolytic Graphite Accompanying Deformation
Pyrolytic graphite deformation and structural transformation
DEFORMATION↗
Quantitative Analysis of Defects in Silicon
The evaluation and prediction of the conversion efficiency for a variety of silicon samples with differences in structural defects, such as grain boundaries, twin boundaries, precipitate particles, dislocations, etc. are discussed. Quantitative characterization of these structural defects, which were revealed by etching the surface of silicon samples, is performed by using an image analyzer. Due to different crystal growth and fabrication techniques the various types of silicon contain a variety of trace impurity elements and structural defects. The two most important criteria in evaluating the various silicon types for solar cell applications are cost and conversion efficiency.
Natesh, R.↗
The structure of Airy's stress function in multiply connected regions
In solving two-dimensional problems using Airy's stress function for multiply connected regions, the form of the function depends on the dislocations and boundary forces present. The structure of Airy's function is shown to consist of a part expressible in terms of boundary forces and a part expressible in the manner of Poincare. Meanings of the constants occurring in Poincare's expression are discussed.
FRAMES, GRIDWORKS AND TRUSSES↗
The use of analytical surface tools in the fundamental study of wear
Various techniques and surface tools available for the study of the atomic nature of the wear of materials are reviewed These include chemical etching, x-ray diffraction, electron diffraction, scanning electron microscopy, low-energy electron diffraction, Auger emission spectroscopy analysis, electron spectroscopy for chemical analysis, field ion microscopy, and the atom probe. Properties of the surface and wear surface regions which affect wear, such as surface energy, crystal structure, crystallographic orientation, mode of dislocation behavior, and cohesive binding, are discussed. A number of mechanisms involved in the generation of wear particles are identified with the aid of the aforementioned tools.
Buckley, D. H.↗
The use of analytical surface tools in the fundamental study of wear
This paper reviews the various techniques and surface tools available for the study of the atomic nature of the wear of materials. These include chemical etching, X-ray diffraction, electron diffraction, scanning electron microscopy, low-energy electron diffraction, Auger emission spectroscopy analysis, electron spectroscopy for chemical analysis, field ion microscopy, and the atom probe. Properties of the surface and wear surface regions which effect wear such as surface energy, crystal structure, crystallographic orientation, mode of dislocation behavior, and cohesive binding are discussed. A number of mechanisms involved in the generation of wear particles are identified with the aid of the aforementioned tools.
Buckley, D. H.↗
The improvement of cryogenic mechanical properties of Fe-12 Mn and Fe-8 Mn alloy steels through thermal/mechanical treatments
An investigation has been made to improve the low temperature mechanical properties of Fe-8Mn and Fe-12Mn-0.2 Ti alloy steels. A reversion annealing heat treatment in the two-phase (alpha + gamma) region following cold working has been identified as an effective treatment. In an Fe-12Mn-0.2Ti alloy a promising combination of low temperature (-196 C) fracture toughness and yield strength was obtained by this method. The improvement of properties was attributed to the refinement of grain size and to the introduction of a uniform distribution of retained austenite (gamma). It was also shown that an Fe-8Mn steel could be grain-refined by a purely thermal treatment because of its dislocated alpha-prime martensitic structure and absence of epsilon martensite. As a result, a significant reduction of ductile to brittle transition temperature was obtained.
Hwang, S. K.↗
Creep of oxide dispersion strengthened materials /with special reference to T-D nichrome/
Analyses of oxide dispersion strengthened (ODS) alloys shows that their characteristics are mainly due to the creep behavior of the matrix material. Diffusion-controlled slip creep is established as the rate-controlling process in the alloys investigated, with the glide and climb of edge dislocations associated with the subgrain structure as barriers being the specific rate-controlling step. It is found that the stable subgrain size in ODS alloys is usually associated with the spacing between particles 500-1000 A in size, and that their creep behavior is distinguished from that of the matrix material by the existence of a threshold stress that is not well defined microscopically but appears to be related to particles of less than 500 A size.
Lin, J.↗
Control of superlattice morphology in GaAs sub1-subxPsubx cascade cells
Superlattices of GaAs(1-x)p(x) are being incorporated into cascade solar cell structures in order to reduce the dislocation density in the top cells and thus reduce recombination loss and increase output voltage. For a superlattice to effectively block the propagation of dislocations its average composition must be equal to that of the layer beneath it (from efficiency considerations for a cascade cell, the average composition should be about GaAs(.7)P(.3). When superlattices of this approximate composition were grown on GaAs by MOCVD, severe distortion of the crystal layers was observed. The essential features of this distortion are nonplanar morphology and accelerated etching in regions containing excess phosphorus and clusters of dislocations. Similar observations have been made with superlattices grown with two other MOCVD systems, indicating that the problem is of fundamental technological significance, not just an artifact of one particular growth system. The nature of the distortion effect is described, and several strategies for preventing its occurrence are presented.
Blakeslee, A. E.↗
Thermal-mechanical fatigue behavior of nickel-base superalloys
The main achievements of a 36-month research program are presented. The main objective was to gain more insight into the problem of crack growth under thermal mechanical fatigue (TMF) conditions. This program was conducted at M.I.T. for the period of September 1982 to September 1985. The program was arranged into five technical tasks. Under Task I, the literature of TMF data was reviewed. The goal was to identify the crack propagation conditions in aircraft engines (hot section) and to assess the validity of conventional fracture mechanics parameters to address TMF crack growth. The second task defined the test facilities, test specimen and the testing conditions needed to establish the effectiveness of data correlation parameters identified in Task I. Three materials (Inconel X-750, Hastelloy-X, and B-1900) were chosen for the program. Task II was accomplished in collaboration with Pratt & Whitney Aircraft engineers. Under Task III, a computerized testing system to measure the TMF behavior (LCF and CG behaviors) of various alloys systems was built. The software used to run isothermal and TMF tests was also developed. Built around a conventional servohydraulic machine, the system is capable of push-pull tests under stress or strain and temperature controlled conditions in the temperature range of 25C to 1050C. A crack propagation test program was defined and conducted under Task IV. The test variables included strain range, strain rate (frequency) and temperature. Task V correlated and generalized the Task IV data for isothermal and variable temperature conditions so that several crack propagation parameters could be compared and evaluated. The structural damage (mode of cracking and dislocation substructure) under TMF cycling was identified and contrasted with the isothermal damage to achieve a sound fundamental mechanistic understanding of TMF.
Pelloux, R. M.↗
Growth and characterization of high current density, high-speed InAs/AlSb resonant tunneling diodes
InAs/AlSb double-barrier resonant tunneling diodes with peak current densities up to 370,000 A/sq cm and high peak-to-valley current ratios of 3.2 at room temperature have been fabricated. The peak current density is well-explained by a stationary-state transport model with the two-band envelope function approximation. The valley current density predicted by this model is less than the experimental value by a factor that is typical of the discrepancy found in other double-barrier structures. It is concluded that threading dislocations are largely inactive in the resonant tunneling process.
Soderstrom, J. R.↗
Process-induced defects in solar cell silicon
The microstructure of as-grown and processed, edge-defined film-fed grown, silicon ribbons was studied in order to identify the basic mechanisms responsible for the change of the as-grown defect structure during processing at elevated temperatures. The short heat treatment required to diffuse the p-n junction was sufficient to cause heterogeneous precipitation of impurity atoms, particularly transition metals. In addition, an elastic recovery of the ribbon occurred by dislocation glide, resulting in the formation of a polygonizationlike structure of subboundaries in the base. Mechanisms are suggested by which twin boundaries, acting as dislocation obstacles, can concentrate the relatively low average dislocation densities typical of edge-defined film-fed grown ribbons (10 to the 4th to 10 to the 8th/sq cm) to values which are sufficient to induce the formation of subgrainlike boundary structures.
Gleichmann, R.↗
Web Growth Used to Confine Screw Dislocations to Predetermined Lateral Positions in 4H-SiC Epilayers
Silicon-carbide- (SiC-) based power devices could enable substantial aerospace electronics benefits over today's silicon-based electronics. However, present-day SiC wafers contain electrically harmful dislocations (including micropipes) that are unpredictably distributed in high densities across all commercial 4H- and 6H-SiC wafers. The NASA Glenn Research Center recently demonstrated a crystal growth process that moves SiC wafer dislocations to predetermined lateral positions in epitaxial layers so that they can be reproducibly avoided during subsequent SiC electronic device fabrication. The process starts by reactive ion etching mesa patterns with enclosed trench regions into commercial on-axis (0001) 4H- or 6H-SiC substrates. An example of a pregrowth mesa geometry with six enclosed triangular-shaped trench regions is shown. After the etch mask is stripped, homoepitaxial growth is carried out in pure stepflow conditions that enable thin cantilevers to grow laterally from the tops of mesas whose pregrowth top surfaces are not threaded by substrate screw dislocations. The image in the bottom figure shows the postgrowth structure that forms after the lateral cantilevers expand to coalesce and completely roof over each of the six triangular trench regions. Atomic force microscope (AFM) measurements of the roof revealed that three elementary screw dislocation growth spirals, each shown in the AFM insets of the bottom image on the previous page, formed in the film roof at three respective points of cantilever film coalescence. The image above shows the structure following an etch in molten potassium hydroxide (KOH) that produced surface etch pits at the dislocation defects. The larger KOH etch pits--S1, S2, and S3--shown in this image correspond to screw dislocations relocated to the final points of cantilever coalescence. The smaller KOH etch pits are consistent with epilayer threading edge dislocations from the pregrowth substrate mesa (P1, P3, and P4) and a final cantilever coalescence point (P2). No defects (i.e., no etch pits) are observed in other cantilevered portions of the film surface. On the basis of the principle of dislocation Burgers vector conservation, we hypothesize that all vertically propagating substrate dislocations in an enclosed trench region become combined into a single dislocation in the webbed film roof at the point of final roof coalescence. The point of final roof coalescence, and therefore the lateral location of a webbed roof dislocation, can be designed into the pregrowth mesa pattern. Screw dislocations with predetermined lateral positions can then be used to provide the new growth steps necessary for growing a 4H/6H-SiC epilayer with a lower dislocation density than the substrate. Devices fabricated on top of such films can be positioned to avoid the preplaced dislocations.
Powell, J. Anthony↗
Carboxylic and dicarboxylic acids extracted from crushed magnesium oxide single crystals
Carboxylic and dicarboxylic acids (glycolic, oxalic, malonic and succinic) have been extracted with tetrahydrofuran (THF) and H2O from large synthetic MgO crystals, crushed to a medium fine powder. The extracts were characterized by infrared spectroscopy and 1H-NMR. The THF extracts were derivatized with tert-butyldimethylsilyl (t-BDMS) for GC-MS analysis. A single crystal separated from the extract was used for an x-ray structure analysis, giving the monoclinic unit cell, space group P21/c with ao = 5.543 A, bo = 8.845 A, co = 5.086 A, and beta = 91.9 degrees, consistent with beta-succinic acid, HOOC(CH2)COOH. The amount of extracted acids is estimated to be of the order of 0.1 to 0.5 mg g-1 MgO. The MgO crystals from which these organic acids were extracted grew from the 2860 degrees C hot melt, saturated with CO/CO2 and H2O, thereby incorporating small amounts of the gaseous components to form a solid solution (ss) with MgO. Upon cooling, the ss becomes supersaturated, causing solute carbon and other solute species to segregate not only to the surface but also internally, to dislocations and subgrain boundaries. The organic acids extracted from the MgO crystals after crushing appear to derive from these segregated solutes that formed C-C, C-H and C-O bonds along dislocations and other defects in the MgO structure, leading to entities that can generically be described as (HxCyOz)n-. The processes underlying the formation of these precursors are fundamental in nature and expected to be operational in any minerals, preferentially those with dense structures, that crystallized in H2O-CO2-laden environments. This opens the possibility that common magmatic and metamorphic rocks when weathering at the surface of a tectonically active planet like Earth may be an important source of abiogenically formed complex organic compounds.
NASA Discipline Exobiology↗
Carboxylic and Dicarboxylic Acids Extracted from Crushed Magnesium Oxide Single Crystals
Carboxylic and dicarboxylic acids (glycolic, oxalic, malonic and succinic) have been extracted with tetrahydrofuran (THE) and H2O from large synthetic MgO crystals, crushed to a medium fine powder. The extracts were characterized by infrared spectroscopy and (sup 1)H-NMR (Nuclear Magnetic Resonance). The THF extracts were derivatized with tert-butyldimethylsilyl (t-BDMS) for GC-MS (Gas Chromatography - Mass Spectroscopy) analysis. A single crystal separated from the extract was used for an x-ray structure analysis, giving the monoclinic unit cell, space group P2(sub 1)/c with a(sub o) = 5.543 A, b(sub o) = 8.845 A, c(sub o) = 5.086 A, and beta = 91.9 degrees, consistent with beta-succinic acid, HOOC(CH2)COOH. The amount of extracted acids is estimated to be of the order of 0.1 to 0.5 mg/g MgO. The MgO crystals from which these organic acids were extracted grew from the 2360 C hot melt, saturated with CO/CO2 and H2O, thereby incorporating small amounts of the gaseous components to form a solid solution (ss) with MgO. Upon cooling, the ss becomes supersaturated, causing solute carbon and other solute species to segregate not only to the surface but also internally, to dislocations and subgrain boundaries. The organic acids extracted from the MgO crystals after crushing appear to derive from these segregated solutes that formed C-C, C-H, and C-O bonds along dislocations and other defects in the MgO structure, leading to entities that can generically be described as (HxCyOz)(sup n-). The processes underlying the formation of these precursors are fundamental in nature and expected to be operational in any minerals, preferentially those with dense structures, that crystallized in H2O-CO2-laden environments. This opens the possibility that common magmatic and metamorphic rocks when weathering at the surface of a tectonically active planet like Earth may be an important source of abiogenically formed complex organic compounds.
Freund, Friedemann↗
High Quality GaAs Growth by MBE on Si Using GeSi Buffers and Prospects for Space Photovoltaics
III-V solar cells on Si substrates are of interest for space photovoltaics since this would combine high performance space cells with a strong, lightweight and inexpensive substrate. However, the primary obstacles blocking III-V/Si cells from achieving high performance to date have been fundamental materials incompatabilities, namely the 4% lattice mismatch between GaAs and Si, and the large mismatch in thermal expansion coefficient. In this paper, we report on the molecular beam epitaxial (MBE) growth and properties of GaAs layers and single junction GaAs cells on Si wafers which utilize compositionally graded GeSi Intermediate buffers grown by ultra-high vacuum chemical vapor deposition (UHVCVD) to mitigate the large lattice mismatch between GaAs and Si. Ga As cell structures were found to incorporate a threading dislocation density of 0.9-1.5 x 10 (exp 6) per square centimeter, identical to the underlying relaxed Ge cap of the graded buffer, via a combination of transmission electron microscopy, electron beam induced current, and etch pit density measurements. AlGaAs/GaAs double heterostructures wre grown on the GeSi/Si substrates for time-resolved photoluminescence measurements, which revealed a bulk GaAs minority carrier lifetime in excess of 10 ns, the highest lifetime ever reported for GaAs on Si. A series of growth were performed to ass3ss the impact of a GaAs buffer to a thickness of only 0.1 micrometer. Secondary ion mass spectroscopy studies revealed that there is negligible cross diffusion of Ga, As and Ge at he III-V/Ge interface, identical to our earlier findings for GaAs grown on Ge wafers using MBE. This indicates that there is no need for a buffer to "bury" regions of high autodopjing,a nd that either pn or np configuration cells are easily accomodated by these substrates. Preliminary diodes and single junction Al Ga As heteroface cells were grown and fabricated on the Ge/GeSi/Si substrates for the first time. Diodes fabricated on GaAs, Ge and Ge/GeSi/Si substrate show nearly identical I-V characteristics in both forward and reverse bias regions. External quantum efficiencies of AlGaAs/GaAs cell structures grown on Ge/GeSi/Si and Ge substrates demonstrated nearly identical photoresponse, which indicates that high lifetimes, diffusion lengths and efficient minority carrier collection is maintained after complete cell processing.
Carlin, J. A.↗
Structure of transient oxides formed on NiCrAl alloys
It is one of the three objectives of the present study to document the fine internal structure of the transient scales in order to clarify the development of the stable alpha-Al2O3 from a structural point of view. Another objective is concerned with the origin of features found in the mature alpha-Al2O3 scales, such as voids, taking into account an examination in the early stages of oxidation. The third objective is to relate any difference in scale structure caused by oxide adherence additives (Y or Zr) to the current oxide adherence theories. The primary effect of short-time oxidation on the NiCrAl substrate structure is found to be production of dislocations and aluminum-depleted phases. The random alpha-Al2O3 scale is the primary oxide phase observed in contact with the metal.
Smialek, J. L.↗