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At least 73 records · Page 4

2D nanoconfinement distorts the solvation structure of hydroxide but not of hydronium

Understanding ion-specific behavior in nanoconfined water is essential for controlling charge transport and selectivity in two-dimensional membranes. Motivated by recent experiments revealing anomalous dielectric and transport behavior of water confined between hBN sheets, we use machine-learning-accelerated first-principles molecular dynamics to investigate the interfacial propensities of hydronium and hydroxide ions under similar confinement. We find that hydronium remains interfacial across all confinement regimes, whereas hydroxide shifts toward the interior as the environment becomes more bulk-like. This contrasting behavior reflects the combined influence of hydrogen bonding, interfacial water layering, and the polarization of hBN, which collectively stabilize hydronium at the surface while making hydroxide slightly more favorable within the structured interior. These findings expose an asymmetry in ion-surface coupling and establish a microscopic origin for hydronium’s enhanced interfacial affinity. The results provide mechanistic insight into ion partitioning in two-dimensional channels and highlight the collective structuring of confined water as a key determinant of interfacial ion thermodynamics.

organic

Impact of metal diffusion, lattice distortions, native defects, and ambient on dielectric breakdown in Ni–Ga 2 O 3 Schottky diodes

Ga 2 O 3 unipolar devices are of high interest due to their ~8 MV/cm predicted breakdown fields, which have not yet been achieved due to premature device failure. Pre- and post-failure defect analysis of Ni–Ga 2 O 3 Schottky diodes in ultrahigh vacuum (UHV) and air were performed using depth-resolved cathodoluminescence, high angle annular dark field scanning transmission electron microscopy, and energy dispersive x-ray analysis to understand the physical mechanisms that precede premature breakdown. The breakdown voltage in UHV was dramatically reduced by nearly 40% compared with the breakdown in air. This reduction in the breakdown voltage correlated with post-breakdown differences in Ni distribution, indicating that the coordination and bonding of Ni contribute strongly to electrical behavior in Ni–Ga 2 O 3 Schottky diodes. Breakdown studies in UHV revealed that Ni diffuses away more from the metal–semiconductor interface than with air breakdown, where Ni localizes more near the interface, indicative of the preferential formation of a Ni oxide under O-poor conditions. These measurements also identified the formation of divacancy-interstitial complexes and their characteristic luminescence signature ~150 nm from the interface, the densities of which correlated with breakdown fields. These findings show that electric-field-induced degradation occurs via the rearrangement of native point defects, which act as an additional precursor to device failure. Macroscopically, they show the impact of both vacuum conditions and metal reactivity on Ga 2 O 3 device fabrication.

36 MATERIALS SCIENCE

Unraveling the Origin of Glassy Thermal Transport in Medium-Entropy Semiconductors: From Nanoscale Phase Segregation to Atomic-Scale Lattice Distortion

Thermoelectric (TE) materials can directly and reversibly convert heat into electricity, offering a promising pathway for reshaping the global energy landscape. The performance of thermoelectric materials is evaluated using the figure of merit, zT = S 2 σT/κ, which can be optimized by improving Seebeck coefficient (S) and electrical conductivity (σ) while suppressing the thermal conductivity (κ) at the operating temperature (T). Here, we introduce a medium-entropy metal chalcogenide that exhibits phonon-glass electron-crystal behavior. The conventional perspective hypothesizes that the suppression of thermal transport arises solely from disordered atomic occupation, which enhances alloy scattering mechanisms for phonon transport. However, emerging evidence suggests the presence of structural and chemical inhomogeneity at multiple length scales in entropy-engineered materials, a phenomenon that has rarely been investigated in detail.

Liu, Yukun [Northwestern Univ]

Ultrafast local demagnetization in 𝑑 6 systems via driven Jahn-Teller distortions

Ultrafast control of spin orientations without relying on highly nonequilibrium electron distributions offers a new pathway for femtosecond spintronics. It is shown that excitation of specific vibronic modes can drive a substantial demagnetization of a local moment relative to the magnetization axis, while preserving its total spin quantum number. Using a fully quantum many-body treatment of a local 𝑆=2 (𝑑 6 ) many-body spin coupled to a driven Jahn-Teller mode with quantum dissipation, we find that the projected spin can be strongly reduced via a Jahn-Teller-induced 𝑥⁢𝑦↑→𝑦⁢𝑧/𝑧⁢𝑥↓ transition, which occurs without additional Coulomb exchange cost. The excited state subsequently relaxes back to its original electronic configuration with a rotated spin direction, enabling spin reorientation without generating a large net angular momentum in the electronic subsystem.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND

Impact of structural distortions on the correlated electronic structure of orbital-selective Mott insulating Na 3 ⁢Co 2 ⁢SbO 6 under strain

Na 3 Co 2 SbO 6 is a promising candidate to realize the Kitaev spin liquid phase since the large Kitaev spin exchange interaction is tunable via the change in electronic structure, such as the trigonal crystal field splitting (Δ TCF ). Here, in this study, we show that the uncorrelated electronic structure of Na 3 Co 2 SbO 6 is rather insensitive to the strain effect due to the low crystal symmetry accompanied by oxygen displacements and the presence of Sb s orbitals. Using density functional theory plus dynamical mean field theory, we find that the correlated electronic structure of Na 3 Co 2 SbO 6 is an orbital-selective Mott insulating state where the trigonal a 1g orbital is insulating due to the nearly full occupation, while other d orbitals behave as typical Mott insulators, resulting in the effective tunability of Δ TCF under the strain effect. The sign change of Δ TCF can occur as the in-plane tensile strain is applied, and the Kitaev spin liquid phase could possibly be realized due to the strongly suppressed Δ TCF under tensile strain. Our results show that the local Co-site symmetry and dynamical correlation effects will play an important role in engineering the novel magnetic phase in this and related materials.

Nguyen, Nam [Univ. of Illinois, Chicago, IL (Unite

Sensitivity of electronic structure to crystal distortions in infinite-layered LaNiO 2

Recent observations of unconventional superconductivity (SC) in thin films of LaNiO 2 (critical temperature T c ≃ 10 K) and in bulk single crystals of La 3 ⁢Ni 2 ⁢O 7 under pressure T c ≃ 80K have cemented a long sought-after class of SC nickelates. In La 1–x ⁢Sr⁢ x ⁢NiO 2 , SC appears only in films for reasons not understood. We perform a combination of experiments to probe the crystal structure and magnetic order in bulk LaNiO 2 together with ab initio calculations of the electronic structure. We find that the infinite layers are naturally buckled out-of-plane. The electronic bands are largely unaffected by the buckling, but uniaxial compression along the c axis may lead to a Lifshitz transition.

36 MATERIALS SCIENCE

Tunable polar distortions and magnetism in Gd 𝑥 ⁢La 1−𝑥 ⁢PtSb epitaxial films

Hexagonal 𝐴⁢𝐵⁢𝐶 intermetallics are predicted to have tunable ferroelectric, topological, and magnetic properties as a function of the polar buckling of 𝐵⁢𝐶 atomic planes. Here, we report the impact of isovalent lanthanide substitution on the buckling, structural phase transitions, and electronic and magnetic properties of Gd 𝑥 ⁢La 1−𝑥 ⁢PtSb films grown by molecular beam epitaxy (MBE) on 𝑐 plane sapphire substrates. The Gd 𝑥 ⁢La 1−𝑥 ⁢PtSb films form a solid solution from 𝑥=0 to 𝑥=1 and retain the polar hexagonal structure (𝑃⁢6 3 ⁢𝑚⁢𝑐) out to 𝑥 ≤ 0.95. With increasing 𝑥, the PtSb buckling increases and the out-of-plane lattice constant 𝑐 decreases due to the lanthanide contraction. While hexagonal LaPtSb is a highly conductive polar metal, the carrier density decreases with 𝑥 until an abrupt phase transition to a zero band overlap semimetal is found for cubic GdPtSb at 𝑥=1. The magnetic susceptibility peaks at small but finite 𝑥, which we attribute to Ruderman-Kittel-Kasuya-Yosida (RKKY) coupling between localized 4⁢𝑓 moments, whose concentration increases with 𝑥, and free carriers that decrease with 𝑥. Samples with 𝑥≥0.3 show antiferromagnetic Curie-Weiss behavior and a Neel temperature that increases with 𝑥. The Gd 𝑥 ⁢La 1−𝑥 ⁢PtSb system provides opportunities to dramatically alter the polar buckling and concentration of local 4⁢𝑓 moments.

36 MATERIALS SCIENCE

Diverse electronic topography in a distorted kagome metal LaTi 3 ⁢Bi 4

Recent reports on a family of kagome metals of the form 𝐿⁢𝑛⁢Ti 3 ⁢Bi 4 (𝐿⁢𝑛 = Lanthanide) have stoked interest due to the combination of highly anisotropic magnetism and a rich electronic structure. The electronic structure near the Fermi level is proposed to exhibit Dirac points and van Hove singularities (VHSs). Here, in this manuscript, we use angle-resolved photoemission spectroscopy measurements in combination with density functional theory calculations to investigate the electronic structure of an interesting kagome metal LaTi 3 ⁢Bi 4 . Our results reveal multiple VHSs with one VHS located in the vicinity of the Fermi level. We clearly observe two flat bands, which originate from the destructive interference of wave functions within the Ti kagome motif. These flat bands and VHSs originate from Ti 𝑑 orbitals and are very responsive to the polarization of the incident beam. We notice a significant anisotropy in the electronic structure, resulting from the breaking of sixfold rotational symmetry in this material. Our findings demonstrate this member of Ti based kagome materials as a promising platform to explore novel emerging phenomena in the wider 𝐿⁢𝑛⁢Ti 3⁢ Bi 4 (𝐿⁢𝑛 = lanthanide) family.

electronic structure

Detuned synchronized waveform averaging for reducing distortions due to sample interleaving

This invention introduces a method for optimally detuning the ratio of analog-to-digital (ADC) sample rate and trigger rate during waveform averaging to minimize the deleterious effects from sample interleaving. A prescription is described for determining the optimal detuning factor for the ADC or trigger rate in any scenario, depending on the number of ADC cores used and the limited tuning resolution of the clock rates for a specific implementation.

42 ENGINEERING

Seals for managing thermal distortion in a turbomachine and methods for building the same

A seal assembly for a component of a turbomachine and method of assembly thereof is provided. The seal assembly includes at least one mating face positioned adjacent to the component and a seal coupled to the mating face. The seal includes an outer shell defining an interior space; an inner matrix filling the interior space comprising a plurality of unit cells comprising one or more metamaterials, wherein at least a portion of the plurality of unit cells are identical, and wherein the plurality of unit cells are repeated throughout the inner matrix; and one or more support struts extending throughout the inner matrix. The method of building the seal assembly may include selecting a first material for the outer shell and selecting the one or more metamaterials for the inner matrix based on the first material.

Trivedi, Deepak