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Electron emission characteristics of low work function surfaces - total energy distributions for five crystallographic directions of tungsten
Diamond is a promising semiconductor material for novel electronic applications because of its chemical stability and inertness, heat conduction properties, and so-called negative electron affinity (NEA). When a surface has NEA, electrons generated inside the bulk of the material are able to come out into the vacuum without any potential barrier (work function). Such a material would have an extremely high secondary electron emission coefficient o, very high photoelectron (quantum) yield, and would probably be an efficient field emitter. Chemical-vapor-deposited (CVD) polycrystalline diamond films have even more advantages than diamond single crystals. Their fabrication is relatively easy and inexpensive, and they can be grown with high levels of doping--consequently, they can have relatively high conductivity. Because of these properties, diamond can be used for cold cathodes and photocathodes in high-power electronics and in high-frequency and high-temperature semiconductor devices.
Formation and electron emission characteristics of low work function surfaces
In past studies it has been shown that the fracture of materials leads to the emission of a variety of species, including electrons, ions, neutral molecules, and photons, all encompassed by the term 'fractoemission' (FE). In this paper, electron emission (EE) from the fracture of single graphite fibers and neat epoxy resin is examined. Measurements of EE are also combined with the detection of acoustic emission (AE) during the testing of graphite-epoxy composite specimens with various fiber orientation. The characteristics of these signals are related to known failure mechanisms in fiber-reinforced plastics. This study suggests that by comparing data from AE and FE measurements, one can detect and distinguish the onset of internal and external failure in composites. EE measurements are also shown to be sensitive to the locus of fracture in a composite material.
Ballistic-electron-emission microscopy (BEEM) has been used to investigate the origin of defects at the Au/GaAs(100) Schottky barrier interface. In addition, molecular beam epitaxy (MBE) and in situ fabrication methods have been employed to control Schottky barrier interface properties. BEEM characterization combined with MBE methods has enabled the development of a near-ideal Schottky barrier interface with drastically reduced defect density.
A method of calculating a relation for the critical surface temperature for ion current emission is presented. The method is based on the S-shaped electron emission curves for surfaces in the presence of ionizable vapors and upon the assumptions of thermodynamic equilibrium involved in the Saha-Langmuir relation. A comparison of the critical temperatures so calculated with the relation obtained from actual ion emission data on the cesium-tungsten system shows good agreement over a wide current density range. Critical temperatures for cesium ion current densities of 0.21 and 1.9 amperes per square centimeter calculated by this method are presented for surfaces of rhenium, molybdenum, tantalum, and niobium. Tentative relations of the form log j equals A (sub p) plus (B (sub p) over T) are presented for these same systems, where j is the ion current density, A (sub p) and B (sub p) are constants, and T is the temperature.
Quality and stability of electron emission characteristics of low work function surfaces - tungsten
Empirical converter surface physics formulation for electron emission current density analysis on cesiated metal surface
Field and photon enhanced electron emission characteristics of cadmium sulfide field emitters
The cesiated electron emission was measured for three candidate electrodes for use as collectors in thermionic converters. Nickel, Inconel 600 and Hastelloy were tested with a 412 K cesium reservoir. Peak emission from the alloys was found to be comparable to that from pure nickel. Both the Inconel and the Hastelloy samples had work functions of 1.64 eV at peak emission. The minimum work functions were estimated to be 1.37 eV at a probe temperature of 750 K for Inconel and 1.40 eV for Hastelloy at 665 K. The bare work function for both alloys is estimated to be approximately the same as for pure nickel, 4.8 eV.
A new technique for spectroscopic investigation of subsurface interface electronic structure has been developed. The method, ballistic-electron-emission microscopy (BEEM), is based on scanning tunneling microscopy. BEEM makes possible, for the first time, direct imaging of subsurface interface properties with nanometer spatial resolution. The first application of BEEM to subsurface Schottky-barrier interfaces is reported.
The secondary electron emission coefficient was obtained for a FEP-Teflon dielectric charged with monoenergetic electrons normally incident upon the surface of the specimen. Measurements of secondary emission coefficient were done for normal and oblique incidence with different primary beam energies in the presence of normal and oblique electric fields. A collimated probing beam was directed to different points on the surface of the specimen and the released or accumulated charge was monitored using an electrometer. The measured data for different probing beam energies, different impact points and different angles of incidence were plotted vs. impact energy and impact point. Data analyzed by computer simulations to find the potential distribution on the surface of the specimen and the electric field around it, is presented and discussed.
A polycrystalline molybdenum sample was recrystallized and thermally stabilized. Quantitative measurements of the emission from each individual grain were obtained with an electron emission microscope. The effective work function for each grain was then calculated. The crystallographic orientation of each grain was determined by Laue back-reflection techniques. A polar plot of effective work function vs crystallographic orientation for the sample was constructed to provide a correlation between effective work function and crystallographic orientation.
Highly insulating materials often acquire significant charges when subjected to fluxes of electrons, ions, or photons. This charge can significantly modify the materials properties of the materials and have profound effects on the functionality of the materials in a variety of applications. These include charging of spacecraft materials due to interactions with the severe space environment, enhanced contamination due to charging in Lunar of Martian environments, high power arching of cables and sources, modification of tethers and ion thrusters for propulsion, and scanning electron microscopy, to name but a few examples. This paper describes new techniques and measurements of the electron emission properties and resistivity of highly insulating materials. Electron yields are a measure of the number of electrons emitted from a material per incident particle (electron, ion or photon). Electron yields depend on incident species, energy and angle, and on the material. They determine the net charge acquired by a material subject to a give incident flu. New pulsed-beam techniques will be described that allow accurate measurement of the yields for uncharged insulators and measurements of how the yields are modified as charge builds up in the insulator. A key parameter in modeling charge dissipation is the resistivity of insulating materials. This determines how charge will accumulate and redistribute across an insulator, as well as the time scale for charge transport and dissipation. Comparison of new long term constant-voltage methods and charge storage methods for measuring resistivity of highly insulating materials will be compared to more commonly used, but less accurate methods.
Secondary electron emission by argon atoms and ions from gas covered surface
Electrostatic probes response due to thermionic electron emission, considering I-V characteristics and space-charge-limited current
A highly reproducible optically stimulated electron emission (OSEE) response steel was achieved in laboratory conditions through suppression of surface photochemistry by replacing air with argon. This permitted the characterization of the OSEE process on D6AC steel as a photodiode. With a low-pressure mercury light source, most of the OSEE current is attributed to photoelectrons released by the 185-nm mercury line with only about 5 percent of the photocurrent associated with the 254-nm line. The forward current-voltage characteristic of the OSEE diode is linear for small fields changing to a square root response at larger fields. These results are all consistent with established theories.
Ballistic-electron-emission microscopy has been used to investigate the effects of strain on Si l-x Ge x alloys. Lifting of the degeneracy of the conduction-band minimum of SiGe due to lattice deformation has been directly measured by application of BEEM spectroscopy to Ag/Si structures.