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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

In Situ Visualization of the Pinning Effect of Planar Defects on Li Ion Insertion

Longevity of Li ion batteries strongly depends on the interaction of transporting Li ions in electrode crystals with defects. However, detailed interactions between the Li ion flux and structural defects in the host crystal remain obscure due to the transient nature of such interactions. Here, by in situ transmission electron microscopy and density function theory calculations, we reveal how the diffusion pathways and transport kinetics of a Li ion can be affected by planar defects in a tungsten trioxide lattice. We uncover that changes in charge distribution and lattice spacing along the planar defects disrupt the continuity of ion conduction channels and dramatically increase the energy barrier of Li diffusion, thus, arresting Li ions at the defect sites and twisting the lithiation front. In conclusion, the atomic-scale understanding holds critical implications for rational interface design in solid-state batteries and solid oxide fuel cells.

25 ENERGY STORAGE↗
DOE OSTI2023

Effect of surface defects on damage and failure of dynamically driven cylindrical shells

Here, in this work, expanding cylinder experiments are performed using a gas gun on the aluminum 6061 alloy to understand the dynamic deformation and failure behavior of this material in the presence of surface defects in the form of scratches. The experiments are then modeled with the modified Tepla (for tensile plasticity) model, which is equipped with the damage yield function of Gurson [“Continuum theory of ductile rupture by void nucleation and growth: Part I—Yield criteria and flow rules for porous ductile media,” (1977)] and Tvergaard and Needleman [Acta Metall. 32(1), 157–169 (1984)], over-stress viscosity [F. Addessio and J. Johnson, J. Appl. Phys. 74(3), 1640–1648 (1993)], and the underlying viscoplastic model of Preston et al. [J. Appl. Phys. 93(1), 211–220 (2003)] (Preston–Tonks–Wallace model) for the dense material. The Tepla model parameters were calibrated using the Bayesian approach against experimentally measured free-surface velocity data obtained from plate impact experiments on the aluminum 6061 alloy. The evolution of radial expansion and shapes of the deformed cylinder from the simulations on a pristine cylinder wall and a cylinder wall with a longitudinal surface defect shows excellent agreement with the corresponding experimental results. Finally, the role of surface defect size and cylinder wall geometry on the dynamic strength of the cylinder wall was also investigated through a series of simulations.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2024

Effects of structural defects on optical properties of In x Ga 1-x N layers and quantum wells

This review concentrates on the microstructure of In x Ga 1-x N layers and quantum wells (QWs) in relation to their optical properties. The microstructure of In x Ga 1-x N, with a constant In(x) concentration, shifts with layer thickness. Only layers below 100 nm for x = 0.1 are nearly defect-free. A photoluminescence peak is observed at 405 nm, in line with ~10% In, suggesting band-edge luminescence. Layers with greater thickness and In content present a corrugated surface with numerous structural defects, including V-defects, causing redshifts and multi-peaks in photoluminescence up to 490 nm. These defects, resembling those in GaN, lead to a corrugated sample surface. Atomic force microscopy shows a 3.7-fold larger corrugation in samples with 20 QWs compared to those with 5 QWs measured on 2 × 2 μm 2 areas. Like in GaN, dual growth on different crystallographic planes results in varied QW thicknesses, influencing optical traits of devices made from In x Ga 1-x N layers. The purpose of this review and the chosen subject is to highlight the significant contribution of Wladek Walukiewicz and his group to the current research on the properties of In x Ga 1-x N, which are crucial alloys in the field of optoelectronics.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Electronic structure of intrinsic defects in c -gallium nitride: Density functional theory study without the jellium approximation

Here, we report the first nonjellium, systematic, density functional theory (DFT) study of intrinsic and extrinsic defects and defect levels in zinc-blende (cubic) gallium nitride. We use the local moment counter charge (LMCC) method, the standard Perdew-Becke-Ernzerhoff (PBE) exchange-correlation potential, and two pseudopotentials, where the Ga 3$\textit{d}$ orbitals are either in the core ($d^0$) or explicitly in the valence set ($d^{10}$). We studied 64, 216, 512, and 1000 atom supercells, and demonstrated convergence to the infinite limit, crucial for delineating deep from shallow states near band edges, and for demonstrating the elimination of finite cell-size errors. Contrary to common claims, we find that exact exchange is not required to obtain defect levels across the experimental band gap. As was true in silicon, silicon carbide, and gallium arsenide, the extremal LMCC defect levels of the aggregate of defects yield an effective LMCC defect band gap that is within 10% of the experimental gap (3.3 eV) for both pseudopotentials. We demonstrate that the gallium vacancy is more complicated than previously reported. There is dramatic metastability–a nearest-neighbor nitrogen atom shifts into the gallium site, forming an antisite, nitrogen vacancy pair, which is more stable than the simple vacancy for positive charge states. Our assessment of the $d^0$ and $d^{10}$ pseudopotentials yields minimal differences in defect structures and defect levels. The better agreement of the $d^0$ lattice constant with experiment suggests that the more computationally economical $d^0$ pseudopotentials are sufficient to achieve the fidelity possible within the physical accuracy of DFT, and thereby enable calculations in larger supercells necessary to demonstrate convergence with respect to finite size supercell errors.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

In-Pile Irradiation Induced Defects and the Effect on Thermal Diffusivity of MgO

The effects of neutron irradiation temperature and dose on thermal diffusivity are compared between non-irradiated and in-pile irradiated MgO samples. MgO pellets were irradiated in-pile of the Advanced Test Reactor at Idaho National Laboratory. Samples were irradiated at 623 and 973 K to fast neutron fluences of 1 x 1025 (1.5 dpa) and 2 x 1025 n/m2 (3 dpa). Post irradiation examination included X-ray diffraction, scanning electron microscopy, laser flash thermal diffusivity, and transmission electron microscopy. The radiation induced thermophysical and structural evolution of MgO is reported

T. Moorea, Donald↗
NASA NTRS2019

An Experimental Investigation concerning the Effects of AFP Defects on Progressive Failure of Tensile Coupons

This paper discusses characterization approaches for the evaluation of potential defects that may occur during the automated fiber placement (AFP) process. Two nondestructive evaluation techniques were utilized simultaneously, acoustic emission (AE) and digital image correlation (DIC), to investigate correlations between mechanical properties and damage propagation during tension tests. The layup configuration is designed with the defect running across the width, and the stacking sequence with seven layers is produced: [−45/0/45/̅9̅̅0̅]s. A total of 3 panels were manufactured: one containing a gap defect in the middle layer, another one with an overlap defect, and a pristine panel for baseline comparison. Each panel accommodates six coupons having dimensions of 20” x 2”. The results indicate that defects caused during the manufacturing process affect damage initiation and growth.

Anay, Rafal↗
NASA NTRS1981

Effects of artificially produced defects on film thickness distribution in sliding EHD point contacts

The effects of artificially produced dents and grooves on the elastohydrodynamic (EHD) film thickness profile in a sliding point contact were investigated by means of optical interferometry. The defects, formed on the surface of a highly polished ball, were held stationary at various locations within and in the vicinity of the contact region while the disk was rotating. It is shown that the defects, having a geometry similar to what can be expected in practice, can dramatically change the film thickness which exists when no defects are present in or near the contact. This change in film thickness is mainly a function of the position of the defects in the inlet region, the geometry of the defects, the orientation of the defects in the case of grooves, and the depth of the defect relative to the central film thickness.

Cusano, C.↗
DOE OSTI2023

Understanding the Effect of Single Atom Cationic Defect Sites in an Al 2 O 3 (012) Surface on Altering Selenate and Sulfate Adsorption: An Ab Initio Study

Adsorption is a promising under-the-sink selenate remediation technique for distributed water systems. Recently it was shown that adsorption induced water network rearrangement control adsorption energetics on the α-Al 2 O 3 (012) surface. Here, we aim to elucidate the relative importance of the water network effects and surface cation identity on controlling selenate and sulfate adsorption energy using density functional theory calculations. Density functional theory (DFT) calculations predicted the adsorption energies of selenate and sulfate on nine transition metal cations (Sc–Cu) and two alkali metal cations (Ga and In) in the α-Al 2 O 3 (012) surface under simulated acidic and neutral pH conditions. We find that the water network effects had a larger impact on the adsorption energy than the cationic identity. However, cation identity secondarily controlled adsorption. Most cations decreased the adsorption energy, weakening the overall performance, the larger Sc and In cations enabled inner-sphere adsorption in acidic conditions because they relaxed outward from the surface, providing more space for adsorption. Additionally, only Ti induced Se selectivity over S by reducing the adsorbing selenate to selenite but not reducing the sulfate. Altogether, this study indicates that tuning water network structure will likely have a larger impact than tuning cation–selenate interactions for increasing adsorbate effectiveness.

Adsorption↗