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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Photovoltaic Module Imaging for Hail Damage Assessment with Multi-Year Follow Up

Outdoor-aged photovoltaic modules that have experienced golf-ball sized hail are characterized by flash testing and photoluminescence, electroluminescence, thermal, and ultraviolet fluorescence imaging. These measurements were performed immediately after the hailstorm and then again after another two years and four years in the field. The modules originally experienced different ranges of hail damage with some having cracks on approximately half of the cells and some having few to no cracked cells. Flash testing shows that the hail-damaged modules with the most cracked cells have 3 to 4% less power than those with the least damage. After four more years in the outdoor climate of Golden, Colorado since the hailstorm, all of the modules still exhibit similar relative power and amounts of cell cracking, suggesting that the hail damage has only initially reduced power but has not yet increased the degradation rate.

electroluminescence↗
DOE OSTI2021

Theoretical investigation of charge transfer between the NV – center in diamond and substitutional N and P

The nitrogen-vacancy (NV) lattice defect in diamond, consisting of an N substitutional atom and an adjacent C vacancy, is commonly observed in two charge states, negative (NV – ) and neutral (NV 0 ). The NV – defect exhibits spin state-dependent fluorescence and is, therefore, amenable to optical methods for spin-state readout, while the NV 0 is not. Hence, the NV – defect is much more useful for quantum sensing and quantum information processing. However, only NV 0 electroluminescence has been observed, even from centers showing NV – in photoluminescence. In the present work, we use first-principles electronic structure calculations to determine adiabatic charge transition levels for the conversion of NV – to NV 0 in the presence of substitutional N or P impurities, which provide the charge of the NV center. Here, we find that the adiabatic charge transition levels in the presence of such impurities lie at energies close to or lower than the zero-phonon line of the NV – center and that these energies only decrease as the concentration of N donors increases. This work, therefore, elucidates the absence of observed electroluminescence from the NV – and proposes a path toward observation of the phenomenon.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Linking Transient Voltage to Spatially-Resolved Luminescence Imaging to Understand Reliability of Perovskite Photovoltaics

In this work, we present a methodology to separate effects of perovskite device metastability from irreversible degradation, using stress/rest cycling under constant current bias while collecting a series of electroluminescence images and continuously monitoring voltage. We develop a simulation model and procedures for image processing to better understand the effects of ion parameters on the transient nature of voltage and evolving electroluminescence images.

electroluminescence↗
DOE OSTI2020

Coupling between interfacial charge and mechanical deformation at high temperatures in ceramics. Final report

Basic research, under this project, has led to new fundamental discoveries in the effect of electric field (and temperature) on diffusion kinetics, electroluminescence and electronic conductivity in ceramic materials. For example, yttria stabilized zirconia sinters in just seconds well below 1000°C, while, at the same time, exhibiting a highly non-linear rise in conductivity, and intense electroluminescence. The phenomenon has been shown to occur in nearly all ceramics whether they are ionic or electronic conductors, or insulators. The rise in conductivity leads to Joule heating but in-situ measurements with a platinum standard at APS and Brookhaven (NSLS-II) have shown that the temperatures are much below what would have been needed to sinter in a few seconds. We have explored the hypothesis that huge concentrations of Frenkel pairs of vacancies and interstitials are produced. While these point defects accelerate sintering (by the interstitials being transported to the pores and the vacancies to the grain boundaries), they may also produce electron-hole pairs which can impart high electrical conductivity or recombine to emit photons. Many measurements, including in-situ measurements of lattice expansion are consistent with this hypothesis. However, the energy barrier for generating Frenkels in zirconia for example is much larger than can be expected at temperature and electrical fields in these experiments. Most recent work suggests that short wavelength phonons play a critical role in the genesis of the “flash” phenomenon. For example, the Debye temperature has been shown to be the lower bound for initiating flash. Molecular dynamics simulations have shown that large concentrations of Frenkel pairs can form under the proliferation of “optical” phonons at the edge of the Brillouin zone, that is with a wavelength at or below the lattice parameter. This project has led to the development of new experimental techniques as well as a software hardware interface for process and control and data analysis in real time, with a time scale of less than one second. This approach spells a new paradigm in materials science research. It potential impact on high rate manufacturing is self evident.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Role of p-GaN layer thickness in the degradation of InGaN-GaN MQW solar cells under 405 nm laser excitation

GaN-based solar cells with InGaN multiple quantum wells (MQWs) are promising devices for application in space environment, concentrator solar systems, wireless power transmission and multi-junction solar cells. It is therefore important to understand their degradation kinetics when submitted to high-temperature and high-intensity stress. We submitted three samples of GaN-InGaN MQW solar cells with p-AlGaN electron-blocking-layer with different thickness of the p-GaN layer to constant power stress at 310 W/cm 2 , 175 °C for several hundred hours. The main degradation modes are a reduction of open-circuit voltage, short-circuit current, external quantum efficiency, power conversion efficiency and electroluminescence. In particular, we observed that a thinner p-GaN layer results in a stronger degradation observed on the cell operating parameters. The analysis of the dark I-V characteristics showed an increase in low-forward bias current and the analysis of electroluminescence showed a decrease in the electroluminescene emitted by the (forward biased) cell, as a consequence of stress. This work highlights that the cause of degradation is possibly related to a diffusion mechanism, which results in an increase of defect density in the active region. Finally, the impurities involved in the diffusion processes possibly originate from the p-side of the devices, therefore a thicker p-GaN layer reduces the amount of defects reaching the active region.

14 SOLAR ENERGY↗
DOE OSTI2020

Highly Emissive Semi-Ladder-Type Copolymers, Aggregation State, and Solution-Processed Organic Light-Emitting Transistor

An organic light-emitting transistor (OLET) integrates the logic function of a field-effect transistor (FET) with electroluminescence of a light-emitting diode (LED) into a single device. This has the potential to play an important role in smart displays, electrically pumped organic laser, and other flexible electronic devices. For achieving high-performance solution-processed OLET, three semiladder copolymers—TPTI-CC, TPTI-C, and TPTI-F—were developed in this study. It was found that variation in the chemical structure lead to significant differences in energy level, emission color, and intermolecular aggregation. High photoluminescence quantum yields (PLQY) was obtained in these three polymers. Solution-processed trilayered OLET devices were fabricated, which exhibited strong electroluminescence, balanced charge mobility, and external quantum efficiency (EQE) of 2.8%.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Light sources with bias tunable spectrum based on van der Waals interface transistors

Light-emitting electronic devices are ubiquitous in key areas of current technology, such as data communications, solid-state lighting, displays, and optical interconnects. Controlling the spectrum of the emitted light electrically, by simply acting on the device bias conditions, is an important goal with potential technological repercussions. However, identifying a material platform enabling broad electrical tuning of the spectrum of electroluminescent devices remains challenging. Here, we propose light-emitting field-effect transistors based on van der Waals interfaces of atomically thin semiconductors as a promising class of devices to achieve this goal. We demonstrate that large spectral changes in room-temperature electroluminescence can be controlled both at the device assembly stage –by suitably selecting the material forming the interfaces– and on-chip, by changing the bias to modify the device operation point. Even though the precise relation between device bias and kinetics of the radiative transitions remains to be understood, our experiments show that the physical mechanism responsible for light emission is robust, making these devices compatible with simple large areas device production methods.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Efficient and bright white light-emitting diodes based on single-layer heterophase halide perovskites

At present, electric lighting accounts for ~15% of global power consumption and thus the adoption of efficient, low-cost lighting technologies is important. Here, halide perovskites have been shown to be good emitters of pure red, green and blue light, but an efficient source of broadband white electroluminescence suitable for lighting applications is desirable. Here, we report a white light-emitting diode (LED) strategy based on solution-processed heterophase halide perovskites that, unlike GaN white LEDs, feature only one broadband emissive layer and no phosphor. Our LEDs operate with a peak luminance of 12,200 cd m –2 at a bias of 6.6 V and a maximum external quantum efficiency of 6.5% at a current density of 8.3 mA cm –2 . Systematic in situ and ex situ characterizations reveal that the mechanism of efficient electroluminescence is charge injection into the α phase of CsPbI 3 , α to δ charge transfer and α–δ balanced radiative recombination. Future advances in fabrication technology and mechanistic understanding should lead to further improvements in device efficiency and luminance.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Origin of Rashba Spin-Orbit Coupling in 2D and 3D Lead Iodide Perovskites

isaWhittaker-Brooks2 & Tho D. Nguyen1* We studied spin dynamics of charge carriers in the superlattice-like Ruddlesden-Popper hybrid lead iodide perovskite semiconductors, 2D (BA)2(MA)Pb2I7 (with MA= CH3NH3, and BA= CH3(CH2)3NH3), and 3D MAPbI3 using the magnetic field effect (MFE) on conductivity and electroluminescence in their light emitting diodes (LEDs) at cryogenic temperatures. The semiconductors with distinct structural/ bulk inversion symmetry breaking, when combined with colossal intrinsic spin–orbit coupling (SOC), theoretically give rise to giant Rashba-type SOC. We found that the magneto-conductance (MC) magnitude increases monotonically with the emission intensity and saturates at ≈0.05% and 0.11% for the MAPbI3 and (BA)2(MA)Pb2I7, respectively. The magneto-electroluminescence (MEL) response with similar line shapes as the MC response has a significantly larger magnitude, and essentially stays constant at ≈0.22% and ≈0.20% for MAPbI3 and (BA)2(MA)Pb2I7, respectively. The sign and magnitude of the MC and MEL responses can be quantitatively explained in the framework of the Δg-based excitonic model using rate equations. Remarkably, the width of the MEL response in those materials linearly increases with increasing the applied electric field, where the Rashba coefficient in (BA)2(MA) Pb2I7 is estimated to be about 7 times larger than that in MAPbI3. Our studies might have significant impact on future development of electrically-controlled spin logic devices via Rashba-like effects

36 MATERIALS SCIENCE↗
DOE OSTI2024

Depolymerizable and recyclable luminescent polymers with high light-emitting efficiencies

Luminescent polymers are of great interest in a number of photonic technologies, including electroluminescence, bioimaging, medical diagnosis, bio-stimulation and security signage. Incorporating depolymerizability and recyclability into luminescent polymers is pivotal for promoting their sustainability and minimizing their environmental impacts at the end of the product lifecycle, but existing strategies often compromise the light-emitting efficiencies. Here, in this study, we develop a strategy that utilizes cleavable moiety to create depolymerizable and recyclable thermally activated delayed fluorescence (TADF) polymers without compromising their high light-emitting efficiencies. The electroluminescent devices based on the TADF polymers achieved a high external quantum efficiency of up to 15.1 %. The TADF polymers can be depolymerized under either mild acidic or heating conditions, with precise control of the kinetics, and the obtained pure monomers can potentially be isolated and repolymerized for subsequent life applications. This work promotes the end-of-life environmental friendliness and circularity of luminescent materials, paving the way to a sustainable photonic industry. Developing depolymerizable and recyclable polymers with high light-emitting efficiencies is of vital importance for sustainable photonic technologies, but remains challenging. Here the authors design a strategy to develop such polymers based on the use of controllable cleavable moiety.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Secondary scintillation properties of multi-layer THGEMs operated in low-pressure CF 4 and Ar/5%Xe

We present a measurement of the secondary scintillation yield produced by two-layer Thick Gas Electron Multipliers (M-THGEMs) in pure Tetrafluoromethane (CF 4 ) gas and in Ar mixed with 5% Xe in low-pressures down to 20 Torr. The detector was irradiated with 5.49 MeV alpha particles from a low-rate 241-Am source. The secondary scintillation light generated during the gas avalanche process was read out by a Hamamatsu photomultiplier tube (model R8520-406), sensitive to a broad wavelength range (160–650 nm). The avalanche charge was collected on the bottom electrode of M-THGEM and correlated to the scintillation light on an event-by-event basis. We observed that, for both gas types, the value of the photon to electron production ratio (0.4 ph/el in CF 4 and 0.1 ph/el in Ar/5%Xe) increases with the thickness of the M-THGEM electrodes and varies significantly with the pressure, being higher at lower values. The decrease in electroluminescence yield at higher pressures is much more pronounced in the Ar/Xe mixture. In addition, because of a larger gas avalanche volume, the electroluminescence light yield is larger in thicker M-THGEM structures. Presented results are particularly useful for designing the next generation of Optical-readout Time Projection Chambers (O-TPCs) operated at low-pressure CF 4 ; applications include experimental nuclear physics with rare isotope beams, dark matter detection with directional sensitivity and observation of the Migdal effect in a low-pressure Optical TPC.

47 OTHER INSTRUMENTATION↗
DOE OSTI2023

NEXT-CRAB-0: a high pressure gaseous xenon time projection chamber with a direct VUV camera based readout

The search for neutrinoless double beta decay(0νββ) remains one of the most compelling experimentalavenues for the discovery in the neutrino sector.Electroluminescent gas-phase time projection chambers are wellsuited to 0νββ searches due to their intrinsicallyprecise energy resolution and topological event identificationcapabilities. Scalability to ton- and multi-ton masses requiresreadout of large-area electroluminescent regions with fine spatialresolution, low radiogenic backgrounds, and a scalable dataacquisition system. This paper presents a detector prototype thatrecords event topology in an electroluminescent xenon gas TPC viaVUV image-intensified cameras. This enables an extendable readoutof large tracking planes with commercial devices that reside almostentirely outside of the active medium. Following furtherdevelopment in intermediate scale demonstrators, this technique mayrepresent a novel and enlargeable method for topological eventimaging in 0νββ.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2024

Long-term temporal stability of the DarkSide-50 dark matter detector

The stability of a dark matter detector on the timescale of a few years is a key requirement due to the large exposure needed to achieve a competitive sensitivity. It is especially crucial to enable the detector to potentially detect any annual event rate modulation, an expected dark matter signature. Here, in this work, we present the performance history of the DarkSide-50 dual-phase argon time projection chamber over its almost three-year low-radioactivity argon run. In particular, we focus on the electroluminescence signal that enables sensitivity to sub-keV energy depositions. The stability of the electroluminescence yield is found to be better than 0.5%. Finally, we show the temporal evolution of the observed event rate around the sub-keV region being consistent to the background prediction.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2021

Calibration of the liquid argon ionization response to low energy electronic and nuclear recoils with DarkSide-50

DarkSide-50 has demonstrated the high potential of dual-phase liquid argon time projection chambers in exploring interactions of WIMPs in the GeV=c 2 mass range. The technique, based on the detection of the ionization signal amplified via electroluminescence in the gas phase, allows us to explore recoil energies down to the sub-keV range. We report here on the DarkSide-50 measurement of the ionization yield of electronic recoils down to ~180 eV er , exploiting 37 Ar and 39 Ar decays, and extrapolated to a few ionization electrons with the Thomas-Imel box model. Further, we present a model-dependent determination of the ionization response to nuclear recoils down to ~500 eV nr , the lowest ever achieved in liquid argon, using in situ neutron calibration sources and external datasets from neutron beam experiments.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2022

Extended Accelerated Stress Testing (EAST) of Glass/Glass, Glass/Backsheet and Glass/Transparent Backsheet PV Modules: Influence of EVA and POE Encapsulants: Preprint

This paper presents the indoor extended accelerated stress testing (EAST) results of glass/glass (GG), glass/backsheet (GB) and glass/transparent backsheet (GT) modules having identical cells and two different encapsulant types, ethyl-vinyl-acetate (EVA) and polyolefin-elastomer (POE). Six 4-cell modules having the above-mentioned construction combinations were subjected to extended ultraviolet (UV; 600 kWh/m2), damp-heat (DH; 2000 hours) and thermal-cycling (TC; 600 cycles) tests. The post-stress UV fluorescent imaging, electroluminescent imaging, reflectance spectrophotometry and colorimetry results indicated that the grid finger degradation and encapsulant browning are slightly higher in the GG modules compared to the GB modules. The post-stress IV test results indicated, in general, that the GG/EVA modules tend to perform inferior to the GG/POE modules with the EAST evaluation.

EVA↗
DOE OSTI2021

Efficient light-emitting diodes based on oriented perovskite nanoplatelets

Solution-processed planar perovskite light-emitting diodes (LEDs) promise high-performance and cost-effective electroluminescent devices ideal for large-area display and lighting applications. Exploiting emission layers with high ratios of horizontal transition dipole moments (TDMs) is expected to boost the photon outcoupling of planar LEDs. However, LEDs based on anisotropic perovskite nanoemitters remain to be inefficient (external quantum efficiency, EQE <5%) due to the difficulties of simultaneously controlling the orientations of TDMs, achieving high photoluminescence quantum yields (PLQYs) and realizing charge balance in the films of assembled nanostructures. Here, we demonstrate efficient electroluminescence from an in situ grown perovskite film composed of a monolayer of face-on oriented nanoplatelets. The ratio of horizontal TDMs of the perovskite nanoplatelet film is ~84%, which leads to a light-outcoupling efficiency of ~31%, substantially higher than that of isotropic emitters (~23%). In consequence, LEDs with a peak EQE of 23.6% are achieved, representing highly efficient planar perovskite LEDs.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Highly multicolored light-emitting arrays for compressive spectroscopy

Miniaturized, multicolored light-emitting device arrays are promising for applications in sensing, imaging, computing, and more, but the range of emission colors achievable by a conventional light-emitting diode is limited by material or device constraints. In this work, we demonstrate a highly multicolored light-emitting array with 49 different, individually addressable colors on a single chip. The array consists of pulsed-driven metal-oxide-semiconductor capacitors, which generate electroluminescence from microdispensed materials spanning a diverse range of colors and spectral shapes, enabling facile generation of arbitrary light spectra across a broad wavelength range (400 to 1400 nm). When combined with compressive reconstruction algorithms, these arrays can be used to perform spectroscopic measurements in a compact manner without diffractive optics. As an example, we demonstrate microscale spectral imaging of samples using a multiplexed electroluminescent array in conjunction with a monochrome camera.

42 ENGINEERING↗
DOE OSTI2024

pvcracks

SAND2024-00922O This software uses electroluminescence images to predict power loss due to cell cracks in photovoltaic modules. The software will incorporate trained variational autoencoder(s) to parameterize cell cracks detected in electroluminescence images of photovoltaic modules and relate cracks to electrical properties; reduced-order models of finite element simulations of electrical behavior of photovoltaic modules under thermomechanical stresses; reduced-order models of stress distributions; inside photovoltaic modules resulting from x-ray topography experiments; and image segmentation and splining methods to analyze x-ray topography measurements of cracked photovoltaic cells. Sandia National Laboratories is a multimission laboratory managed and operated by National Technology & Engineering Solutions of Sandia, LLC, a wholly owned subsidiary of Honeywell International Inc., for the U.S. Department of Energy’s National Nuclear Security Administration under contract DE-NA0003525.

Hartley, James↗