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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
NASA NTRS2008

Radiation-Insensitive Inverse Majority Gates

To help satisfy a need for high-density logic circuits insensitive to radiation, it has been proposed to realize inverse majority gates as microscopic vacuum electronic devices. In comparison with solid-state electronic devices ordinarily used in logic circuits, vacuum electronic devices are inherently much less adversely affected by radiation and extreme temperatures. The proposed development would involve state-of-the-art micromachining and recent advances in the fabrication of carbon-nanotube-based field emitters. A representative three-input inverse majority gate would be a monolithic, integrated structure that would include three gate electrodes, six bundles of carbon nanotubes (serving as electron emitters) at suitable positions between the gate electrodes, and an overhanging anode. The bundles of carbon nanotubes would be grown on degenerately doped silicon substrates that would be parts of the monolithic structure. The gate electrodes would be fabricated as parts of the monolithic structure by means of a double-silicon-on-insulator process developed at NASA's Jet Propulsion Laboratory. The tops of the bundles of carbon nanotubes would lie below the plane of the tops of the gate electrodes. The particular choice of shapes, dimensions, and relative positions of the electrodes and bundles of carbon nanotubes would provide for both field emission of electrons from the bundles of carbon nanotubes and control of the electron current to obtain the inverse majority function, which is described in the paper.

Manohara, Harish↗
NASA NTRS2011

Pulsed Laser System to Simulate Effects of Cosmic Rays in Semiconductor Devices

Spaceflight system electronic devices must survive a wide range of radiation environments with various particle types including energetic protons, electrons, gamma rays, x-rays, and heavy ions. High-energy charged particles such as heavy ions can pass straight through a semiconductor material and interact with a charge-sensitive region, generating a significant amount of charge (electron-hole pairs) along their tracks. These excess charges can damage the device, and the response can range from temporary perturbations to permanent changes in the state or performance. These phenomena are called single event effects (SEE). Before application in flight systems, electronic parts need to be qualified and tested for performance and radiation sensitivity. Typically, their susceptibility to SEE is tested by exposure to an ion beam from a particle accelerator. At such facilities, the device under test (DUT) is irradiated with large beams so there is no fine resolution to investigate particular regions of sensitivity on the parts. While it is the most reliable approach for radiation qualification, these evaluations are time consuming and costly. There is always a need for new cost-efficient strategies to complement accelerator testing: pulsed lasers provide such a solution. Pulsed laser light can be utilized to simulate heavy ion effects with the advantage of being able to localize the sensitive region of an integrated circuit. Generally, a focused laser beam of approximately picosecond pulse duration is used to generate carrier density in the semiconductor device. During irradiation, the laser pulse is absorbed by the electronic medium with a wavelength selected accordingly by the user, and the laser energy can ionize and simulate SEE as would occur in space. With a tightly focused near infrared (NIR) laser beam, the beam waist of about a micrometer can be achieved, and additional scanning techniques are able to yield submicron resolution. This feature allows mapping of all of the sensitive regions of the studied device with fine resolution, unlike heavy ion experiments. The problematic regions can be precisely identified, and it provides a considerable amount of information about the circuit. In addition, the system allows flexibility for testing the device in different configurations in situ.

Aveline, David C.↗
NASA NTRS1991

NASA SBIR product catalog, 1991

This catalog is a partial list of products of NASA SBIR (Small Business Innovation Research) projects that have advanced to some degree into Phase 3. While most of the products evolved from work conducted during SBIR Phase 1 and 2, a few advanced to commercial status solely from Phase 1 activities. The catalog presents information provided to NASA by SBIR contractors who wished to have their products exhibited at Technology 2001, a NASA-sponsored technology transfer conference held in San Jose, California, on December 4, 5, and 6, 1991. The catalog presents the product information in the following technology areas: computer and communication systems; information processing and AI; robotics and automation; signal and image processing; microelectronics; electronic devices and equipment; microwave electronic devices; optical devices and lasers; advanced materials; materials processing; materials testing and NDE; materials instrumentation; aerodynamics and aircraft; fluid mechanics and measurement; heat transfer devices; refrigeration and cryogenics; energy conversion devices; oceanographic instruments; atmosphere monitoring devices; water management; life science instruments; and spacecraft electromechanical systems.

Source record↗
NASA NTRS2005

757 Path Loss Measurements

Path Loss Measurements were obtained on three (3) GPS equipped 757 aircraft. Systems measured were Marker Beacon, LOC, VOR, VHF (3), Glide Slope, ATC (2), DME (2), TCAS, and GPS. This data will provide the basis for assessing the EMI (Electromagnetic Interference) safety margins of comm/nav (communication and navigation) systems to portable electronic device emissions. These Portable Electronic Devices (PEDs) include all devices operated in or around the aircraft by crews, passengers, servicing personnel, as well as the general public in the airport terminals. EMI assessment capability is an important step in determining if one system-wide PED EMI policy is appropriate. This data may also be used comparatively with theoretical analysis and computer modeling data sponsored by NASA Langley Research Center and others.

Horton, Kent↗
NASA NTRS2013

An Operational Safety and Certification Assessment of a TASAR EFB Application

This paper presents an overview of a Traffic Aware Strategic Aircrew Requests (TASAR) Electronic Flight Bag application intended to inform the pilot of trajectory improvement opportunities while en route that result in operational benefits. The results of safety analyses and a detailed review of Federal Aviation Administration (FAA) regulatory documents that establish certification and operational approval requirements are presented for TASAR. The safety analyses indicate that TASAR has a likely Failure Effects Classification of “No Effect,” and at most, is no worse than “Minor Effect.” Based on this safety assessment and the detailed review of FAA regulatory documents that determine certification and operational approval requirements, this study concludes that TASAR can be implemented in the flight deck as a Type B software application hosted on a Class 2 Portable Electronic Device (PED) Electronic Flight Bag (EFB). This implementation approach would provide a relatively low-cost path to certification and operational approval for both retrofit and forward fit implementation, while at the same time facilitating the business case for early ADS-B IN equipage. A preliminary review by FAA certification and operational approvers of the analyses presented here confirmed that the conclusions are appropriate and that TASAR will be considered a Type B application.

Koczo, Stefan↗
NASA NTRS2016

Terrestrial Sources of X-Ray Radiation and Their Effects on NASA Flight Hardware

X-rays are an energetic and penetrating form of ionizing electromagnetic radiation, which can degrade NASA flight hardware. The main concern posed by such radiation is degradation of active electronic devices and, in some cases, diodes. Non-electronic components are only damaged at doses that far exceed the point where any electronic device would be destroyed. For the purposes of this document, flight hardware can be taken to mean an entire instrument, the flight electronics within the instrument or the individual microelectronic devices in the flight electronics. This document will discuss and describe the ways in which NASA flight hardware might be exposed to x-rays, what is and isn't a concern, and how to tell the difference. First, we must understand what components in flight hardware may be vulnerable to degradation or failure as a result of being exposed to ionizing radiation, such as x-rays. As stated above, bulk materials (structural metals, plastics, etc.) are generally only affected by ionizing radiation at very high dose levels. Likewise, passive electronic components (e.g. resistors, capacitors, most diodes) are strongly resistant to exposure to x-rays, except at very high doses. The main concerns arise when active components, that is, components like discrete transistors and microelectronic devices, are exposed to ionizing radiation. Active components are designed to respond to minute changes in currents and voltages in the circuit. As such, it is not surprising that exposure to ionizing radiation, which creates ionized and therefore electrically active particles, may degrade the way the hardware performs. For the most part, the mechanism for this degradation is trapping of the charges generated by ionizing radiation by defects in dielectric materials in the hardware. As such, the degree of damage is a function of both the quantity of ionizing radiation exposure and the physical characteristics of the hardware itself. The metric that describes the level of exposure to ionizing radiation is total ionizing dose (TID). The unit of TID is the rad, which is defined as 100 ergs absorbed per gram of material. Dose can be expressed in other units, for example grays (gy), where 1 gy = 100 rads. The actual fluence of radiation needed to deliver a rad depends on the absorbing material, so units of dose are usually stated in reference to the material of interest. That is, for microelectronic devices, the unit of dose is generally rad (Si) or rad (SiO2). However, the definition of absorbed dose in this fashion has the advantage that the type of radiation causing the ionization can be normalized so that a realistic and adequate comparison can be made. The sensitivity of microelectronic parts to TID varies over many orders of magnitude. (Note: Doses to humans are typically expressed in rems-or roentgen-equivalent-man-which measures tissue damage, and depends on the type of radiation, as well as the dose in rads.) Thus far, the "softest" parts tested at NASA showed damage at 500 rads (Si), while parts that are radiation-hardened by design can remain functional to doses on the order of 107 rads (Si). This broad range of sensitivity highlights one of the most important considerations when considering the effects of radiation on electronic parts: In order to determine whether a radiation exposure is a concern for a particular part, one must understand the technologies used in the part and their vulnerabilities to TID damage. A NASA radiation expert should be consulted to obtain such information.

X-ray↗
NASA NTRS1975

Potential usefulness of CCD imagers in astronomy

Two dimensional detectors have been important in astronomy since the earliest days of the science. Recently, the requirements for greater photometric accuracy, sensitivity and spectral coverage have driven the search for better imaging devices. Electron beam readout devices with a variety of target materials and intensification schemes, including the SEC and silicon vidicons, have been used successfully. The CCD as an image detector has several potential advantages over electron beam readout devices; low noise, simple construction and geometric stability are among them.

Mccord, T. B.↗
NASA NTRS2024

A Perspective on Multi-Source Energy Harvesting Technology Using Piezoelectric and Thermoelectric Materials

Energy harvesting using various locally available energy sources such as vibration energy, heat, sound, or magnetic field have become attractive topics for supplying power to modular electronic devices making them run independently in extreme environments. In this paper, we will be discussing the perspectives on thermoelectric (TE) and piezoelectric materials and devices, and then the concept of multi-source energy harvester using piezoelectric and thermoelectric devices and integration of them into a reliable and independent power source. TE materials having low thermal conductivity and high figure-of-merit ( zT ) are developed to convert even a small temperature gradient efficiently into electrical energy with the state-of-the-art conversion efficiency of ~15% and output power of ~56 W from single device. The piezoelectric device architecture is configured using high performance piezoelectric ceramics (Cu-Mn-PIN-PMN-PT). These ceramics exhibit high piezoelectric coefficient with high mechanical quality factor and low dielectric loss factor. Using these piezoelectric materials, power density as high a 2 mW/cm 2 is demonstrated in 1-1.5 g vibration environments. The piezoelectric device is attached on the surface of TE module to capture both the vibration and thermal energy sources to realize dual mode energy harvester. The multi-energy transfer strategy opens opportunities for a future generation of wireless and modular electronic devices. These devices would be useful in powering wearable electronic devices, micro sensor chargers, etc. in extreme environmental conditions using body heat/thermal sources and induced motion/vibrations.

Piezoelectric↗
NASA NTRS1999

Multi-Dimensional Quantum Tunneling and Transport Using the Density-Gradient Model

We show that quantum effects are likely to significantly degrade the performance of MOSFETs (metal oxide semiconductor field effect transistor) as these devices are scaled below 100 nm channel length and 2 nm oxide thickness over the next decade. A general and computationally efficient electronic device model including quantum effects would allow us to monitor and mitigate these effects. Full quantum models are too expensive in multi-dimensions. Using a general but efficient PDE solver called PROPHET, we implemented the density-gradient (DG) quantum correction to the industry-dominant classical drift-diffusion (DD) model. The DG model efficiently includes quantum carrier profile smoothing and tunneling in multi-dimensions and for any electronic device structure. We show that the DG model reduces DD model error from as much as 50% down to a few percent in comparison to thin oxide MOS capacitance measurements. We also show the first DG simulations of gate oxide tunneling and transverse current flow in ultra-scaled MOSFETs. The advantages of rapid model implementation using the PDE solver approach will be demonstrated, as well as the applicability of the DG model to any electronic device structure.

Biegel, Bryan A.↗
NASA NTRS1991

Silicon carbide, an emerging high temperature semiconductor

In recent years, the aerospace propulsion and space power communities have expressed a growing need for electronic devices that are capable of sustained high temperature operation. Applications for high temperature electronic devices include development instrumentation within engines, engine control, and condition monitoring systems, and power conditioning and control systems for space platforms and satellites. Other earth-based applications include deep-well drilling instrumentation, nuclear reactor instrumentation and control, and automotive sensors. To meet the needs of these applications, the High Temperature Electronics Program at the Lewis Research Center is developing silicon carbide (SiC) as a high temperature semiconductor material. Research is focussed on developing the crystal growth, characterization, and device fabrication technologies necessary to produce a family of silicon carbide electronic devices and integrated sensors. The progress made in developing silicon carbide is presented, and the challenges that lie ahead are discussed.

Matus, Lawrence G.↗
NASA NTRS2021

AIAA Ascend 2021 Conference On Demand Manufacturing of Electronics Panel Abstract

1. Session Proposal o Session Title NASA’s In Space Manufacturing and the On Demand Manufacturing of Electronics o Session Topic Primary -- Space Logistics, Autonomy, and Robotics; Secondary – Transformative Research and Technologies o Session Format: Panel Discussion. o Requested Session Duration: 60 minutes o Short Session Description: The goal of NASA’s On Demand Manufacturing of Electronics project is to develop and demonstrate the feasibility of a low-gravity, on-demand manufacturing system for flexible hybrid electronic devices on the International Space Station. This panel will feature several key collaborators and team members from the commercial sector, academia, and internal to NASA, each of which are contributing an unique and vital role to the design and implementation of this new technology system. o Extended Session Description (Please describe in detail the activity proposed, including how you intend to use the requested session duration. This session description will be provided to the reviewers for consideration and will not be displayed in the online agenda.): The session will be moderated by Curtis Hill, the Project Lead for the On Demand Manufacturing of Electronics (ODME), and he will start by giving a brief introduction to the ODME project which is working to produce a demo system for the manufacturing of electronic devices on the International Space Station. Panelists consisting of collaborators and team members to the ODME project will then give a brief (~5 min) introduction highlighting their contributions to the project, followed by time for Q&A from the audience. The panel will consist of: 1. Kenneth Church, nScrypt. nScrypt is a leader in multi-material printing with a modular system that incorporates a direct write thick film print head, a polymer fused filament fabrication print head, a laser sintering attachment, a drill head attachment for milling, and a pick and place. The system can print a layer and scan for accuracy of prints. The combination of multiple print heads and scanning allows for the on-demand production of intricate electronic components. 2. Andy Kurk, TechShot, Inc. Techshot, Inc. has collaborated extensively with NASA on the in space manufacturing of both printed electronics and fused metal materials. They are currently working to develop and integrate a test system for printed electronics, and a flight demonstration on the International Space Station is anticipated in 2024. 3. Ed Hendricks, NextFlex. NextFlex has the goal of advancing the manufacture of flexible hybrid electronics in the U.S. They are working with ODME on the development of AstroSense, an additively manufactured, wireless, flexible, and wearable health sensor. 4. Dr. Pradeep Lall, Auburn University. Professor Lall is the MacFarlane Endowed Distinguished Professor in the Department of Mechanical Engineering with a Courtesy Joint Appointment in the Department of Electrical and Computer Engineering and a Courtesy Joint Appointment in the Department of Finance. He is collaborating with NASA’s ODME project to develop multilayer printable devices and to develop techniques to test the quality of a printed electronic device. 5. Dr. Wei Gao, California Institute of Technology. Professor Gao is an Assistant Professor of Medical Engineering. His group is developing fully printed, flexible, and wearable biosensors for crew health monitoring in collaboration with NASA’s ODME project. In addition, they are working on using sweat to power biofuel cells for wearable, self-powered electronic devices. 6. Beth Paquette, NASA Goddard. The ODME branch at NASA Goddard is spearheading a sounding rocket flight demo to prove the capability of a printed electronic device with multiple sensors. In addition, they focus on thin film and flexible energy storage evaluations. o Session Goal(s)/Outcome(s): Please list the learning objectives and/or tangible outcomes (technical paper or other publication). The goal of this session is to highlight the internal and collaborative efforts of NASA’s On Demand Manufacturing of Electronics project to develop a system for printing electronics that will be tested on the International Space Station in 2024. In addition, the session with facilitate discussion with the community on the state of the art of printable electronics, current challenges, and new avenues for collaboration.

Jennifer McInnis Jones↗