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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

High-throughput predictions of metal–organic framework electronic properties: theoretical challenges, graph neural networks, and data exploration

Abstract With the goal of accelerating the design and discovery of metal–organic frameworks (MOFs) for electronic, optoelectronic, and energy storage applications, we present a dataset of predicted electronic structure properties for thousands of MOFs carried out using multiple density functional approximations. Compared to more accurate hybrid functionals, we find that the widely used PBE generalized gradient approximation (GGA) functional severely underpredicts MOF band gaps in a largely systematic manner for semi-conductors and insulators without magnetic character. However, an even larger and less predictable disparity in the band gap prediction is present for MOFs with open-shell 3 d transition metal cations. With regards to partial atomic charges, we find that different density functional approximations predict similar charges overall, although hybrid functionals tend to shift electron density away from the metal centers and onto the ligand environments compared to the GGA point of reference. Much more significant differences in partial atomic charges are observed when comparing different charge partitioning schemes. We conclude by using the dataset of computed MOF properties to train machine-learning models that can rapidly predict MOF band gaps for all four density functional approximations considered in this work, paving the way for future high-throughput screening studies. To encourage exploration and reuse of the theoretical calculations presented in this work, the curated data is made publicly available via an interactive and user-friendly web application on the Materials Project.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Electronic properties of the bulk and surface states of Fe 1+y Te 1-x Se x

The idea of employing non-Abelian statistics for error-free quantum computing ignited interest in reports of topological surface superconductivity and Majorana zero modes (MZMs) in FeTe 0.55 Se 0.45 . However, the topological features and superconducting properties are not observed uniformly across the sample surface. The understanding and practical control of these electronic inhomogeneities present a prominent challenge for potential applications. Here, we combine neutron scattering, scanning angle-resolved photoemission spectroscopy, and microprobe composition and resistivity measurements to characterize the electronic state of Fe 1+y Te 1-x Se x . Furthermore, we establish a phase diagram in which the superconductivity is observed only at sufficiently low Fe concentration, in association with distinct antiferromagnetic correlations, whereas the coexisting topological surface state occurs only at sufficiently high Te concentration. We find that FeTe 0.55 Se 0.45 is located very close to both phase boundaries, which explains the inhomogeneity of superconducting and topological states. Our results demonstrate the compositional control required for use of topological MZMs in practical applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Electronic Properties of UN and UN – from Photoelectron Spectroscopy and Correlated Molecular Orbital Theory

In this work, the results of calculations of the properties of the anion UN – including electron detachment are described, which further expand our knowledge of this diatomic molecule. High-level electronic structure calculations were conducted for the UN and UN – diatomic molecules and compared to photoelectron spectroscopy measurements. The low-lying Ω states were obtained using multireference CASPT2 including spin-orbit effects up to ~20,000 cm –1 . At the Feller–Peterson–Dixon (FPD) level, the adiabatic electron affinity (AEA) of UN is estimated to be 1.402 eV and the vertical detachment energy (VDE) is 1.423 eV. The assignment of the UN excited states shows good agreement with the experimental results with a VDE of 1.424 eV. An Ω = 4 ground state was obtained for UN – which is mainly associated with the 3 H ΛS state. Thermochemical calculations estimate a bond dissociation energy (BDE) for UN – (U – + N) of 665.9 kJ/mol, ~15% larger than that of UN and UN + . The NBO analysis reveals U–N triple bonds for the UN, UN – , and UN + species.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2026

Influence of Disorder on the Electronic Properties and Magnetotransport of Ti 3 C 2 T x Single-Flake Devices

The exploration of MXenes for electronic applications is a rapidly growing field in materials science. However, most research has focused on MXene films, with only a limited number of studies addressing the characterization of single-flake devices. In this work, we investigate the electronic and magnetotransport properties of Ti 3 C 2 T x single-flake devices, exploring the influence of structural defectivity on their transport mechanisms. We show that negative magnetoresistance present at low temperatures in single flake samples arises from weak localization, which we analyze to extract the phase coherence length of single-layer and multi-layer flakes. The study of magnetoresistance for this metallic MXene shows that the material exhibits quantum transport phenomena when intrinsic electronic behavior dominates. Moreover, by increasing the defect density via thermal annealing in ultrahigh vacuum, we uncover and characterize the metal-to-disordered metal transition in Ti 3 C 2 T x , shedding light on new properties and enriching fundamental knowledge about MXenes.

MXenes↗
DOE OSTI2022

Correlating electronic properties with M-site composition in solid solution Ti y Nb 2- y CT x MXenes

High electrical conductivity is desired in MXene films for applications such as electromagnetic interference shielding, antennas, and electrodes for electrochemical energy storage and conversion applications. Due to the acid etching-based synthesis method, it is challenging to deconvolute the relative importance that factors such as chemical composition and flake size contribute to resistivity. To understand the intrinsic and extrinsic contributions to the macroscopic electronic transport properties, a systematic study controlling compositional and structural parameters was conducted with eight solid solutions in the Ti y Nb 2-y CT x system. Here, in particular, we investigated the different roles played by metal (M)-site composition, flake size, and d-spacing on macroscopic transport. Hard x-ray photoemission spectroscopy and spectroscopic ellipsometry revealed changes to electronic structure induced by the M-site alloying. Consistent with the spectroscopic results, the low- and room-temperature conductivities and effective carrier mobility are correlated with the Ti content, while the impact of flake size and d-spacing is most prominent in low-temperature transport. The results provide guidance for designing and engineering MXenes with a wide range of conductivities.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Optimizing dicyandiamide pretreatment conditions for enhanced structure and electronic properties of polymeric graphitic carbon nitride

Graphitic carbon nitride, a polymeric semiconductor, possesses a distinctive electronic band structure and exceptional chemical stability, making it a highly promising material for various catalytic applications such as electrocatalysis, photocatalysis, and photo-electrocatalysis. However, its practical applications remain limited due to its low active site density and poor electrical conductivity. In this study, to overcome such limitations, we have conducted a thorough investigation to explore the impact of dicyandiamide (DCDA) precursor pretreatment prior to thermal polymerization to graphitic carbon nitride. The DCDA precursor was subjected to various pretreatment methods including grinding using mortar and pestle, recrystallization through stirring or probe sonication after dissolving in deionized water, and freeze drying, prior to thermal polymerization at 550 °C for 2 hours. The structural and morphological properties of the catalysts prepared were compared and characterized by X-ray diffraction (XRD), attenuated total reflectance–Fourier transform infrared (ATR-IR) spectroscopy, scanning electron microscopy (SEM), transmission electron microscopy (TEM), and X-ray photoelectron spectroscopy (XPS) analysis while the electronic band gap properties were determined based on density functional theory (DFT) calculations for a set of crystalline systems having C/N ratios similar to those identified experimentally. In comparison to direct thermal polymerization, pretreated samples rendered the same product yield, diverse morphologies with flat or wrinkle structures, and reduced electrochemical resistance, making them suitable for use in various catalytic processes.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Small molecule crystals with 1D water wires modulate electronic properties of surface water networks

This work evaluates the effect of water vapor pressure on the surface conductivity of a hydrated small molecule crystal under dry and wet conditions. The crystal contains a discrete metal complex with waters of hydration in structural positions and in 1D water wires. Under dry conditions, the surface of the hydrated crystal behaves as a near ideal capacitor. Under wet conditions, the waters of hydration serve as a template to assemble surface water networks by organization of water from the environment. The surface water provides pathways for charge transfer attributed to proton mobility that increases conductivity by > 3 orders in magnitude. Modulation between wet and dry conditions tunes the conductivity of the crystal surface via a two-step process, which has been evaluated kinetically as a function of the water vapor pressure.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Transforming the electronic properties of phosphorene through charge transfer superatomic doping

Phosphorene is a two-dimensional electron poor p-type semiconductor with great promise for applications in electronics and optoelectronics. Here, in this work, we propose how the two most important properties of a semiconductor, the band gap energy and the nature of carriers, can be controlled by changing the dimensionality or through charge transfer doping with metal-chalcogenide superatoms. Our studies on nanoribbons examine how the band gap can be changed by controlling the width of the ribbons. We investigate the stability and properties of bare and H-terminated nanoribbons. We show that small non-passivated ribbons can be metallic while the passivated ribbons show variation in the band gap energy as a function of the width of the ribbon. We next investigate an alternative approach to band gap and carrier control via doping with ligated metal-chalcogenide superatom clusters whose redox properties can be changed by ligand exchange. Our results obtained from deposition of Co 6 S 8 (PH 3 ) 5-n (CO) n clusters on a phosphorene support showed that the band gap energy can be controlled by exchanging the electron donating phosphine ligands with electron withdrawing CO. We then show that by depositing Re 6 Se 8 (PH 3 ) 5-n Cl n clusters, phosphorene can be converted into a p- or n- type semiconductor as the relative composition of ligands is changed. Our studies provide a novel approach to controlling carrier type and band gap in phosphorene.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Charge Density Waves and Electronic Properties of Superconducting Kagome Metals

We report that kagome metals AV 3 Sb 5 (A = K, Rb, and Cs) exhibit intriguing superconductivity below 0.9 ~ 2.5 K, a charge density wave (CDW) transition around 80 ~ 100 K, and $\mathbb{Z}$ 2 topological surface states. The nature of the CDW phase and its relation to superconductivity remains elusive. In this work, we investigate the electronic and structural properties of CDW by first-principles calculations. We reveal an inverse Star of David deformation as the 2 x 2 x 2 CDW ground state of the kagome lattice. The kagome lattice shows softening breathing-phonon modes, indicating the structural instability. However, electrons play an essential role in the CDW transition via Fermi surface nesting and van Hove singularity. The inverse Star of David structure agrees with recent experiments by scanning tunneling microscopy (STM). The CDW phase inherits the nontrivial $\mathbb{Z}$ 2 -type topological band structure. Further, we find that the electron-phonon coupling is too weak to account for the superconductivity T c in all three materials. It implies the existence of unconventional pairing of these kagome metals. Our results provide essential knowledge toward understanding the superconductivity and topology in kagome metals.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Probing the Electronic and Opto-Electronic Properties of Multilayer MoS 2 Field-Effect Transistors at Low Temperatures

Transition metal dichalcogenides (TMDs)-based field-effect transistors (FETs) are being investigated vigorously for their promising applications in optoelectronics. Despite the high optical response reported in the literature, most of them are studied at room temperature. To extend the application of these materials in a photodetector, particularly at a low temperature, detailed understanding of the photo response behavior of these materials at low temperatures is crucial. Here we present a systematic investigation of temperature-dependent electronic and optoelectronic properties of few-layers MoS 2 FETs, synthesized using the mechanical exfoliation of bulk MoS 2 crystal, on the Si/SiO 2 substrate. Our MoS 2 FET show a room-temperature field-effect mobility μ FE ~40 cm 2 ·V -1 ·s -1 , which increases with decreasing temperature, stabilizing at 80 cm 2 ·V -1 ·s -1 below 100 K. The temperature-dependent (50 K < T < 300 K) photoconductivity measurements were investigated using a continuous laser source λ = 658 nm (E = 1.88 eV) over a broad range of effective illuminating laser intensity, P eff (0.02 μW < P eff < 0.6 μW). Photoconductivity measurements indicate a fractional power dependence of the steady-state photocurrent. The room-temperature photoresponsivity (R) obtained in these samples was found to be ~2 AW -1 , and it increases as a function of decreasing temperature, reaching a maximum at T = 75 K. The optoelectronic properties of MoS 2 at a low temperature give an insight into photocurrent generation mechanisms, which will help in altering/improving the performance of TMD-based devices for various applications.

2D materials↗
DOE OSTI2022

Computational studies of structural, energetic, and electronic properties of pure Pt and Mo and mixed Pt/Mo clusters: Comparative analysis of characteristics and trends

The added technological potential of bimetallic clusters and nanoparticles, as compared to their pure (i.e., one-component) counterparts, stems from the ability to further fine-tune their properties and, consequently, functionalities through a simultaneous use of the “knobs” of size and composition. The practical realization of this potential can be greatly advanced by the knowledge of the correlations and relationships between the various characteristics of bimetallic nanosystems on the one hand and those of their pure counterparts as well as pure constituent components on the other hand. Here, in this study, we present results of a density functional theory based study of pure Pt n and Mo n clusters aimed at revisiting and exploring further their structural, electronic, and energetic properties. These are then used as a basis for analysis and characterization of the results of calculations on two-component Pt n-m Mo m clusters. The analysis also includes establishing relationships between the properties of the Pt n-m Mo m clusters and those of their Pt n-m and Mo m components. One of the particularly intriguing findings suggested by the calculated data is a linear dependence of the average binding energy per atom in sets of Pt n-m Mo m clusters that have the same fixed number m of Mo atoms and different number n-m of Pt atoms on the fractional content (n-m)/n of Pt atoms. We derive an analytical model that establishes the fundamental basis for this linearity and expresses its parameters—the m-dependent slope and intercept—in terms of characteristic properties of the constituent components, such as the average binding energy per atom of Mo m and the average per-atom adsorption energy of the Pt atoms on Mo m . The conditions of validity and degree of robustness of this model and of the linear relationship predicted by it are discussed.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Electronic Properties of the Weyl Semimetals Co 2 MnX (X=Si, Ge, Sn)

Using first-principles electronic structure calculations, iwe show that ferromagnetic Heusler compounds Co2MnX (X = Si, Ge, Sn) present nontrivial topological characteristics and belong to the category of Weyl semimetals. These materials exhibit two topologically interesting band crossings near the Fermi level. These band crossings have complex 3D geometries in the Brillouin zone and are characterized by nontrivial topology as Hopf links and chain-like nodal lines that are protected by the perpendicular mirror planes. The spin–orbit interaction split these nodal lines into several 0D Weyl band crossings. Unlike previously known topologically nontrivial Heusler materials, these majority spin band crossings lie in or very near to the bandgap of minority spin bands, potentially facilitating experimental observation.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Cryo-quenched Fe–Ni–Cr alloy decorative steel single crystals II: Alloy phases, structure, hardness, tensile, tribological, magnetic and electronic properties

We have previously reported (Boatner et al., J. Alloys Compd. 691 (2017) 666–671) on the discovery, formation, processing, and application of a new decorative ternary steel alloy and on its use in a wide range of practical applications including: custom and commercial knives, art objects, jewelry, electronics, and furniture. This decorative property results when polished single crystals of the 70 wt%Fe-15 wt%Ni-15 wt% Cr austenitic alloy are cryo-quenched into the martensitic phase resulting in the formation of a three-dimensional raised pattern of mixed austenitic/martensitic laths. These laths propagate across large dimensions of the material due to the absence of grain boundaries in the single crystal. The macroscopic optically reflective 3-D decorative pattern reproduces the structural symmetry inherent in the single-crystal orientation. This pattern results solely from the metallurgical phase properties of the ternary alloy and is completely distinct from the properties of Damascus steels or more modern so-called pattern-welded steels. Here we use X-ray diffraction, nanoindentation, hardness measurements/scratch testing, tribological measurements, and alloy resistivity and magnetization methods to obtain a more fundamental and comprehensive study of the effects of the austenitic/martensitic phase transition on the structural and physical properties of the 70 wt%Fe-15 wt%Ni-15 wt% Cr alloy. These results reveal new insight into irreversible phenomena that are associated with the inhibited phase transition on heating of the two-phase, mixed austenitic/martensitic structure that is formed subsequent to cryo-quenching the alloy crystal to 77 K.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Structure and Electronic Properties of Mesopores in Si PV Devices with PLEO Contacts

All current state-of-the-art silicon photovoltaic (PV) devices employ some flavor of passivating contact structure to minimize detrimental recombination while providing good conductivity. These properties are most often provided by a dielectric layer (SiNx, Al2O3, or SiOx) that is in contact with the crystalline silicon (c-Si) substrate. The effectiveness of these layers is heavily dependent on the nanoscale structure of both the dielectric layers and the crystalline silicon interface. As an example, the tunneling probability for charge carriers across thin SiOx layers, a process that is critical to maintain high conductivity, is extremely sensitive to the SiOx thickness. SiOx with a thickness below 2 nm readily allows charge carrier tunneling, whereas it is impeded for greater thicknesses. In the latter case it has been shown that modifications to the thermal processing schedule can induce disruptions, or pinholes, in thick SiOx layers that allow transport of charge carriers while maintaining excellent passivation. However, this requires higher temperatures processes that may inhibit widespread adoption by industry. Recently, another option has been presented that may circumvent the necessity for high temperature processing, namely metal assisted chemical etching (MACE). MACE relies on deposition of Ag nanoparticles onto the SiOx layers with subsequent electroless etching to form mesopores in the SiOx layers that are analogous to the pinholes created with high temperature processing. The size and density can be controlled based on the Ag nanoparticle deposition conditions. The resulting contact structure is known as polysilicon on locally etched oxide (PLEO) contacts. The nanoscale structure of the mesopores in PLEO contacts define the device level observables such as recombination current (Jo) and junction resistance. In this work we present atomic resolution transmission electron microscopy (TEM) analysis of mesopores in PLEO contacts formed with a different processing conditions to connect provide insight into how the nanoscale structure of the SiOx layer influences PV device properties. Additionally, we have previously used electron beam induced current (EBIC) to probe local transport properties in Si PV devices with a SiOx layer containing pinholes due to high temperature processing. Using EBIC we were able to directly show the enhance charge carrier transport through the pinholes. Here we also employ EBIC to study non-uniformities in charge carrier recombination and transport associated with mesopores in PLEO contacts and compare these results with our previous work on devices with pinholes in the SiOx formed through high temperature processes. The products of this work provide critical information that is required to both further optimize performance of Si PV devices with PLEO contact and to drive future adoption of this technology by industry.

ENGINEERING,SOLAR ENERGY↗
DOE OSTI2020

Tuning electronic properties in LaNiO 3 thin films by B-site Cu-substitution

Resistors are essential parts of futuristic all-oxide electronic architectures, yet easily overlooked due to their apparent simplicity. In this study, design of thin films with specific resistance spanning six orders of magnitude by partial substitution of Cu 2+ for Ni 3+ in the metallic conductor LaNiO 3 is shown. Substitution is attainable across the whole composition range using atomic layer deposition on LaAlO 3 (100) pc substrates, however with some inclusion of Ruddlesden–Popper RP1 phase (La 2 CuO 4 ) at high levels of Cu-incorporation. The thermal stability of the resistance is based on a metal–insulator transition that evolves from non-existent for LaNiO 3 to above room-temperature for high Cu 2+ substitution. This provides further insight in the metal–insulator transition found for correlated rare-earth nickelates, especially the type of transition seen for ultrathin films of LaNiO 3 that is usually attributed to oxygen vacancy formation. Materials with variable resistivity and metal–insulator-transition temperatures are key in the design of futuristic electronics such as metal–insulator-transition-driven neuromorphic devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Electronic properties of single-layer CoO 2 /Au(111)

Here we report direct measurements via angle-resolved photoemission spectroscopy (ARPES) of the electronic dispersion of single-layer (SL) CoO 2 . The Fermi contour consists of a large hole pocket centered at the $\overline{\Gamma}$ point. To interpret the ARPES results, we use density functional theory (DFT) in combination with the multi-orbital Gutzwiller Approximation (DFT+GA), basing our calculations on crystalline structure parameters derived from x-ray photoelectron diffraction and low-energy electron diffraction. Our calculations are in good agreement with the measured dispersion. We conclude that the material is a moderately correlated metal. We also discuss substrate effects, and the influence of hydroxylation on the CoO 2 SL electronic structure.

36 MATERIALS SCIENCE↗