Laser dynamics: probing microscopic processes in InGaN light emitters
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Sarkissian, Raymond↗
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Emitter current suppression in a high-low-junction emitter solar cell using an oxide-charge-induced electron accumulation layer
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Neugroschel, A.↗
Rare Earth Garnet Selective Emitter
Thin film Ho-YAG and Er-YAG emitters with a platinum substrate exhibit high spectral emittance in the emission band (epsilon(sub lambda) approx. = 0.75, sup 4)|(sub 15/2) - (sup 4)|(sub 13/2),for Er-YAG and epsilon(sub lambda) approx. = 0.65, (sup 5)|(sub 7) - (sup 5)|(sub 8) for Ho-YAG) at 1500 K. In addition, low out-of-band spectral emittance, epsilon(sub lambda) less than 0.2, suggest these materials would be excellent candidates for high efficiency selective emitters in thermophotovoltaic (TPV) systems operating at moderate temperatures (1200-1500 K). Spectral emittance measurements of the thin films were made (1.2 less than lambda less than 3.0 microns) and compared to the theoretical emittances calculated using measured values of the spectral extinction coefficient. In this paper we present the results for a new class of rare earth ion selective emitters. These emitters are thin sections (less than 1 mm) of yttrium aluminum garnet (YAG) single crystal with a rare earth substitutional impurity. Selective emitters in the near IR are of special interest for thermophotovoltaic (TPV) energy conversion. The most promising solid selective emitters for use in a TPV system are rare earth oxides. Early spectral emittance work on rare earth oxides showed strong emission bands in the infrared (0.9 - 3 microns). However, the emittance outside the emission band was also significant and the efficiency of these emitters was low. Recent improvements in efficiency have been made with emitters fabricated from fine (5 - 10 microns) rare earth oxide fibers similar to the Welsbach mantle used in gas lanterns. However, the rare earth garnet emitters are more rugged than the mantle type emitters. A thin film selective emitter on a low emissivity substrate such as gold, platinum etc., is rugged and easily adapted to a wide variety of thermal sources. The garnet structure and its many subgroups have been successfully used as hosts for rare earth ions, introduced as substitutional impurities, in the development of solid state laser crystals. Doping, dependent on the particular ion and crystal structure, may be as high as 100 at. % (complete substitution of yttrium ion with the rare earth ion). These materials have high melting points, 1940 C for YAG (Yttrium Aluminum Garnet), and low emissivity in the near infrared making them excellent candidates for a thin film selective emitter. As previously stated, the spectral emittance of a rare earth emitter is characterized by one or more well defined emission bands. Outside the emission band the emittance(absorptance) is much lower. Therefore, it is expected that emission outside the band for a thin film selective emitter will be dominated by the emitter substrate. For an efficient emitter (power in the emission band/total emitted power) the substrate must have low emittance, epsilon(sub S). This paper presents normal spectral emittance, epsilon(sub lambda), measurements of holmium(Ho) and erbium (Er) doped YAG thin film selective emitters at (1500 K), and compares those results with the theoretical spectral emittance.
Lowe, Roland A.↗
Thermophotovoltaic Generators Using Selective Metallic Emitters
In the literature to date on thermophotovoltaic (TPV) generators, two types of infrared emitter's have been emphasized : gray body emitters and rare earth oxide selective emitters. The gray body emitter is defined as an emitter with a spectral emissivity independent of wavelength whereas the rare earth oxide selective emitter is idealized as a delta function emitter with a high emissivity at a select wavelength and a near zero emissivity at all other wavelengths. Silicon carbide is an example of a gray body emitter and ER-YAG is an example of a selective emitter. The Welsbach mantle in a common lantern is another example of an oxide selective emitter. Herein, we describe an alternative type of selective emitter, a selective metallic emitter. These metallic emitters are characterized by a spectral emissivity curve wherein the emissivity monotonically increases with shorter infrared wavelengths as is shown. The metal of curve "A", tungsten, typifies this class of selective metallic emitter's. In a thermophotovoltaic generator, a photovoltaic cell typically converts infrared radiation to electricity out to some cut-off wavelength. For example, Gallium Antimonide (GaSb) TPV cells respond out to 1.7 microns. The problem with gray body emitters is that they emit at all wavelengths. Therefore, a large fraction of the energy emitted will be outside of the response band of the TPV cell. The argument for the selective emitter is that, ideally, all the emitted energy can be in the cells response band. Unfortunately, rare earth oxide emitters are not ideal. In order to suppress the emissivity toward zero away from the select wavelength, the use of thin fiber's is necessary. This leads to a fragile emitter typical of a lantern mantle. Even given a thin ER-YAG emitter, the measured emissivity at the select wavelength of 1.5 microns has been reported to be 0.6 while the off wavelength background emissivity falls to only 0.2 at 5 microns. This gives a selectivity ratio of only 3. Another problem with a delta function selective emitter is its low power density at practical temperatures because of its narrow emission bandwidth. The concept of selectivity can be generalized by noting that we simply wish to maximize the ratio of in-cell-band power to out-of-cell-band power. Using this generalized selectivity concept and assuming a GaSb cell covered by a simple dielectric filter, we note that the emissivity selectivity ratio for tungsten is 0.3 (at 1.5 microns) / 0.07 (at 5 microns) = 4.3. In the folloy4ng sections, we note that the selective metallic emitters can be valuable in both radioisotope TPV generators in space and in hydrocarbon fired TPV generators here on earth.
Fraas, Lewis M.↗
Shielding in ungated field emitter arrays
Cathodes consisting of arrays of high aspect ratio field emitters are of great interest as sources of electron beams for vacuum electronic devices. The desire for high currents and current densities drives the cathode designer towards a denser array, but for ungated emitters, denser arrays also lead to increased shielding, in which the field enhancement factor β of each emitter is reduced due to the presence of the other emitters in the array. To facilitate the study of these arrays, we have developed a method for modeling high aspect ratio emitters using tapered dipole line charges. This method can be used to investigate proximity effects from similar emitters an arbitrary distance away and is much less computationally demanding than competing simulation approaches. Here, we introduce this method and use it to study shielding as a function of array geometry. Emitters with aspect ratios of 10{sup 2}–10{sup 4} are modeled, and the shielding-induced reduction in β is considered as a function of tip-to-tip spacing for emitter pairs and for large arrays with triangular and square unit cells. Shielding is found to be negligible when the emitter spacing is greater than the emitter height for the two-emitter array, or about 2.5 times the emitter height in the large arrays, in agreement with previously published results. Because the onset of shielding occurs at virtually the same emitter spacing in the square and triangular arrays, the triangular array is preferred for its higher emitter density at a given emitter spacing. The primary contribution to shielding in large arrays is found to come from emitters within a distance of three times the unit cell spacing for both square and triangular arrays.
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
Ultra-high Temperature Emittance Measurements for Space and Missile Applications
Advanced modeling and design efforts for many aerospace components require high temperature emittance data. Applications requiring emittance data include propulsion systems, radiators, aeroshells, heatshields/thermal protection systems, and leading edge surfaces. The objective of this work is to provide emittance data at ultra-high temperatures. MSFC has a new instrument for the measurement of emittance at ultra-high temperatures, the Ultra-High Temperature Emissometer System (Ultra-HITEMS). AZ Technology Inc. developed the instrument, designed to provide emittance measurements over the temperature range 700-3500K. The Ultra-HITEMS instrument measures the emittance of samples, heated by lasers, in vacuum, using a blackbody source and a Fourier Transform Spectrometer. Detectors in a Nicolet 6700 FT-IR spectrometer measure emittance over the spectral range of 0.4-25 microns. Emitted energy from the specimen and output from a Mikron M390S blackbody source at the same temperature with matched collection geometry are measured. Integrating emittance over the spectral range yields the total emittance. The ratio provides a direct measure of total hemispherical emittance. Samples are heated using lasers. Optical pyrometry provides temperature data. Optical filters prevent interference from the heating lasers. Data for Inconel 718 show excellent agreement with results from literature and ASTM 835. Measurements taken from levitated spherical specimens provide total hemispherical emittance data; measurements taken from flat specimens mounted in the chamber provide near-normal emittance data. Data from selected characterization studies will be presented. The Ultra-HITEMS technique could advance space and missile technologies by advancing the knowledge base and the technology readiness level for ultra-high temperature materials.
Rogers, Jan↗
Reappraisal of solid selective emitters
New rare earth oxide emitters show greater efficiency than previous emitters. As a result, based on a simple model the efficiency of these emitters was calculated. Results indicate that the emission band of the selective emitter must be at relatively low energy (less than or equal to .52 eV) to obtain maximum efficiency at moderate emitter temperatures (less than or equal to 1500 K). Thus low bandgap energy PV materials are required to obtain an efficient thermophotovoltaic (TPV) system. Of the 4 specific rare earths (Nd, Ho, Er, Yb) studied Ho has the largest efficiency at moderate temperatures (72 percent at 1500 K). A comparison was made between a selective emitter TPV system and a TPV system that uses a thermal emitter plus a band pass filter to make the thermal emitter behave like a selective emitter. Results of the comparison indicate that only for very optimistic filter and thermal emitter properties will the filter TPV system have a greater efficiency than the selective emitter system.
Chubb, Donald L.↗
Reappraisal of solid selective emitters
New rare earth oxide emitters show greater efficiency than previous emitters. As a result, based on a simple model the efficiency of these emitters was calculated. Results indicate that the emission band of the selective emitter must be at relatively low energy (less than or equal to .52 eV) to obtain maximum efficiency at moderate emitter temperatures (less than or equal to 1500 K). Thus, low bandgap energy PV materials are required to obtain an efficient thermophotovoltaic (TPV) system. Of the 4 specific rare earths (Nd, Ho, Er, Yb) studied, Ho has the largest efficiency at moderate temperatures (72 percent at 1500 K). A comparison was made between a selective emitter TPV system and a TPV system that uses a thermal emitter plus a band pass filter to make the thermal emitter behave like a selective emitter. Results of the comparison indicate that only for very optimistic filter and thermal emitter properties will the filter TPV system have a greater efficiency than the selective emitter system.
Chubb, Donald L.↗
Silicon Emitter Needle and Array Design for Indium Electrospray Arrays for Spacecraft Propulsion
A design for silicon microfabricated emitter arrays was developed for electrospray thrusters for indium propellant in compact architectures with scalable thrust, low mass and volume, high specific impulse and high efficiency operation. The design elements include tip height, height uniformity across the array, tip radii, axial groove depth, tip angle, emitter shank sidewall angle and number of emitters. They were derived from commercial liquid metal ion source designs and modeling, fabrication and test results. The most critical results of the emitter array design analysis suggest that microfabricated silicon emitter array emitters should have a height greater than 280 microns with a height uniformity of +/-10 microns, a tip half angle of 49° for uniform turn-on voltages and current across the array, low beam divergence and high mass utilization efficiency. Elements of the design were fabricated and demonstrated in single emitter and in 400 element emitter arrays to validate the design, fabrication and performance capability. The design height and uniformity of arrays was demonstrated for 85% of the emitters in a prototype array. Required tip and sidewall angles and groove depths have been microfabricated. Single microfabricated silicon emitters demonstrated better performance in current and voltage characteristics than commercially available liquid metal ion sources. Microfabricated emitters and arrays demonstrated the required current and stability performance to enable the MEP thruster development for indium propellant.
Marrese-Reading, Colleen M.↗
A numerical simulation study of gallium-phosphide/silicon heterojunction passivated emitter and rear solar cells
The performance of passivated emitter and rear (PERC) solar cells made of p-type Si wafers is often limited by recombination in the phosphorus-doped emitter. To overcome this limitation, a realistic PERC solar cell is simulated, whereby the conventional phosphorus-doped emitter is replaced by a thin, crystalline gallium phosphide (GaP) layer. The resulting GaP/Si PERC cell is compared to Si PERC cells, which have (i) a standard POCl{sub 3} diffused emitter, (ii) a solid-state diffused emitter, or (iii) a high efficiency ion-implanted emitter. The maximum efficiencies for these realistic PERC cells are between 20.5% and 21.2% for the phosphorus-doped emitters (i)–(iii), and up to 21.6% for the GaP emitter. The major advantage of this GaP hetero-emitter is a significantly reduced recombination loss, resulting in a higher V{sub oc}. This is so because the high valence band offset between GaP and Si acts as a nearly ideal minority carrier blocker. This effect is comparable to amorphous Si. However, the GaP layer can be contacted with metal fingers like crystalline Si, so no conductive oxide is necessary. Compared to the conventional PERC structure, the GaP/Si PERC cell requires a lower Si base doping density, which reduces the impact of the boron-oxygen complexes. Despite the lower base doping, fewer rear local contacts are necessary. This is so because the GaP emitter shows reduced recombination, leading to a higher minority electron density in the base and, in turn, to a higher base conductivity.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Theory and measurements of emittance preservation in plasma wakefield acceleration
In this dissertation, we examine the preservation and measurement of emittance in the plasma wakefield acceleration blowout regime. Plasma wakefield acceleration (PWFA) is a revolutionary approach to accelerating charged particles that has been demonstrated to have the potential for gradients orders of magnitude greater than traditional approaches. The application of PWFA to the design of a linear collider will make new high energy physics research possible, but the design parameters must first be shown to be competitive with traditional methods. Emittance preservation is necessary in the design of a linear collider in order to maximize luminosity. We examine the conditions necessary for circular symmetry in the PWFA blowout regime, and demonstrate that current proposals meet these bounds. We also present an application of beam lamentation which describes the process of beam parameter and emittance matching. We show that the emittance growth saturates as a consequence of energy spread in the beam. The initial beam parameters determine the amount of emittance growth, while the contribution of energy spread is negligible. We also present a model for ion motion in the presence of a beam that is much more dense than the plasma. By combining the model of ion motion and emittance growth, we find the emittance growth due to ion motion is minimal in the case of marginal ion motion. In addition, we present a simulation that validates the ion motion model, which is under further development to examine emittance growth of both marginal and pronounced ion motion. Finally, we present a proof-of-concept of an emittance measurement which may enable the analysis of emittance preservation in future PWFA experiments.
43 PARTICLE ACCELERATORS↗
Rare earth garnet selective emitter
Thin film Ho-YAG and Er-YAG emitters with a platinum substrate exhibit high spectral emittance in the emission band (epsilon(sub lambda) approximately equal to 0.74, ((4)l(sub 15/2)) - ( (4)l(sub13/2)), for Er-YAG and epsilon(sub lambda) approximately equal to 0.65, ((5)l(sub 7))-((5)l(sub 8)) for Ho-YAG) at excellent candidates for high efficiency selective emitters in the thermophotovoltaics (TPV) systems operating at moderate temperatures (1200-1500K). Spectral emittance measurements of the thin films were made (1.2 less than lambda less than 3.0 microns) and compared to the theoretical emittances calculated using measured values of the spectral extinction coefficient. In this paper we present the results for a new class of rare earth ion selective emitters. These emitters are thin sections (less than 1 mm) of yttrium aluminum garnet (YAG) single crystal with a rare earth substitutional impurity. This paper presents normal spectral emittance, epsilon(sub lambda), measurements of holmium (Ho), and erbium (Er) doped YAG thin film selective emitters at 1500 K, and compares those results with the theoretical spectral emittance.
Lowe, Roland A.↗
Improving the Sensitivity of Mass Spectrometry by Using a New Sheath Flow Electrospray Emitter Array at Subambient Pressures
Arrays of chemically etched emitters with individualized sheath gas capillaries have been developed to enhance electrospray ionization (ESI) at subambient pressures. By including an emitter array in a subambient pressure ionization with nanoelectrospray (SPIN) source, ionization and transmission efficiency can be maximized allowing for increased sensitivity in mass spectrometric analyses. The SPIN source eliminates the major ion losses at conventional ESI-mass spectrometry (MS) interface by placing the emitter in the first vacuum region of the instrument. To facilitate stable electrospray currents in such conditions we have developed an improved emitter array with individualized sheath gas around each emitter. The utility of the new emitter arrays for generating stable multi-electrosprays at subambient pressures was probed by coupling the emitter array/SPIN source with a time of flight (TOF) mass spectrometer. The instrument sensitivity was compared between single emitter/SPIN-MS and multi-emitter/SPIN-MS configurations using an equimolar solution of 9 peptides. An increase in sensitivity correlative to the number of emitters in the array was observed.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Elementary framework for cold field emission from quantum-confined, non-planar emitters
For suitably small field emitters, the effects of quantum confinement at the emitter tip may have a significant impact on the emitter performance and total emitted current density (ECD). Since the geometry of a quantum system uniquely determines the magnitude and distribution of its energy levels, a framework for deriving ECD equations from cold field electron emitters of arbitrary geometry and dimensionality is developed. In the interest of obtaining semi-analytical ECD equations, the framework is recast in terms of plane wave solutions to the Schrödinger equation via the use of the Jeffreys-Wentzel-Kramers-Brillouin approximation. To demonstrate the framework's consistency with our previous work and its capabilities in treating emitters with non-planar geometries, ECD equations were derived for the normally unconfined cylindrical nanowire (CNW) and normally confined (NC) CNW emitter geometries. As a function of the emitter radius, the NC CNW emitter ECD profile displayed a strong dependence on the Fermi energy and had an average ECD that exceeded the Fowler-Nordheim equation for typical values of the Fermi energy due to closely spaced, singly degenerate energy levels (excluding electron spin), comparatively large electron supply values, and the lack of a transverse, zero-point energy. Such characteristics suggest that emitters with non-planar geometries may be ideal for emission from both an electron supply and electrostatics perspective.
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
Bias-free lateral terahertz emitters—A simulation study
The design and performance of bias-free InN-based THz emitters that exploit lateral photocurrents is studied by means of numerical simulations. We use a drift-diffusion model with adjusted carrier temperatures and mobilities. The applicability of this approach is demonstrated by a comparison with results from Monte-Carlo simulations. We consider a simple but robust lateral emitter concept using metal stripes with two different thicknesses with one of them being thin enough to be transparent for THz radiation. This arrangement can be easily multiplexed and the efficiency of this concept has already been demonstrated by experiment for GaAs substrates. In the present study, we consider InN, which is known to be an efficient photo-Dember emitter because of its superior transport properties. Our main focus is on the impact of the emitter design on the emission efficiency assuming different operation principles. Both the lateral photo-Dember (LPD) effect and built-in lateral field effects are considered. The appropriate choice of the metal stripe and window geometry as well as the impact of surface Fermi level pinning are investigated in detail, and design guidelines for efficient large area emitters using multiplexed structures are provided. We find that InN LPD emitters do not suffer from Fermi level pinning at the InN surface. The optimum emission efficiency is found for LPD emitter structures having 200 nm wide illumination windows and mask stripes. Emitter structures in which lateral electric fields are induced by the metal mask contacts can have a considerably higher efficiency than pure LPD emitters. In the best case, the THz emission of such structures is increased by one order of magnitude. Their optimum window size is 1 μm without the necessity of a partially transparent set of mask stripes.
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
Spectral Emittance of Uncoated and Ceramic-Coated Inconel and Type 321 Stainless Steel
The normal spectral emittance of Inconel and type 321 stainless steel with different surface treatments was measured at temperatures of 900, 1,200, 1,500, and 1,800 F over a wavelength range of 1.5 to 15 microns. The measurements involved comparison of the radiant energy emitted by the heated specimen with that emitted by a comparison standard at the same temperature by means of a recording double-beam infrared spectrophotometer. The silicon carbide comparison standard had previously been calibrated against a laboratory black-body furnace. Surface treatments included electropolishing, sandblasting, electro-polishing followed by oxidation in air for 1/2 hour at 1,800 F, sandblasting followed by oxidation in air for 1/2 hour at 1,800 F, application of National Bureau of Standards coating A-418, and application of NBS ceramic coating N-143. The normal spectral emittance of both alloys in the electropolished condition was low and decreased very slightly with increasing wavelength while in the sandblasted condition it was somewhat higher and did not vary appreciably with wavelength. The oxidation treatment greatly increased the normal spectral emittance of both the electropolished and sandblasted type 321 stainless steel specimens and of the electropolished Inconel specimens and introduced some spectral selectivity into the curves. The oxidation increased the normal spectral emittance of the sandblasted Inconel specimens only moderately. Of the specimens to which a coating about 0.002 inch thick was applied, those coated with A-418 had higher emittance at all wavelengths than did those coated with N-143, and the coated specimens of Inconel had higher spectral emittance at all wavelengths than did the corresponding specimens of type 321 stainless steel. Both coatings were found to be partially transparent to the emitted energy at this thickness but essentially opaque at a thickness of 0.005 inch. Coated specimens with 0.005 inch or more of coating did not show the effect of the underlying metal on spectral emittance, and there was no significant difference at wavelengths greater than about five microns in the normal spectral emittance of specimens having the two coatings. At shorter wavelengths the normal spectral emittance of specimens coated with A-418 was greater than that of specimens coated with N-143.
Richmond, Joseph C.↗
Electrospray Thruster Performance with Microfabricated Emitter Arrays and Indium Propellant
The feasibility of a microfabricated indium-fueled electrospray thruster with excellent performance was demonstrated. High efficiency electrospray thrusters with microfabricated components are under development for very compact, distributable propulsion systems that can be employed on both very small and large spacecraft with 10X improvement over SOA in mass, volume and specific impulse The critical components of this technology are the microfabricated emitter arrays and the capillary force driven indium feed system. Grey scale electron-beam lithography patterning and reactive ion dry etching provided the required micron-scale etch precision and uniformity across an array of 400 emitters in 1 cm2. Initial tests of single microfabricated silicon emitters demonstrated better performance than industry standard single emitters and the performance required to achieve 200 micronewtons when scaled up to a thruster with 400 emitters in 1 cm2. Arrays of emitters tested in a preliminary prototype Microfluidic Electrospray Propulsion (MEP) thruster assembly demonstrated stable performance at estimated thrust levels of 5, 50, and 120 µN at extraction voltages less than 4 kV. Current stability was within 0.15 % at 120 µN with only 1.5% of the emitter current collected by the extractor electrode. Post-test inspections revealed that more than 99% of the 400 emitters were electrospraying during the test. Specific impulse was estimated to be >3100 s from measurements of total charge and consumed indium mass at an emitter voltage of 1470 V. The results of this investigation suggest that microfabricated indium electrospray thruster technology is both feasible and capable of excellent performance as a highly compact microthruster.
Marrese-Reading, Colleen M.↗
A transverse emittance and acceptance measurement system in a low-energy beam transport line
A transverse beam emittance and acceptance measurement system has been developed to visualize the relationship between the injected beam emittance and the acceptance of a cyclotron. The system is composed of a steering magnet, two pairs of slits to limit the horizontal and vertical phase-space, a beam intensity detector just behind the slits for the emittance measurement, and a beam intensity detector in the cyclotron for the acceptance measurement. The emittance is obtained by scanning the slits and measuring the beam intensity distribution. The acceptance is obtained by measuring the distribution of relative beam transmission by injecting small emittance beams at various positions in a transverse phase-space using the slits. In the acceptance measurement, the beam from an ion source is deflected to the defined region by the slits using the steering magnet so that measurable acceptance area covers a region outside the injection beam emittance. Measurement tests were carried out under the condition of accelerating a beam of {sup 16}O{sup 6+} from 50.2 keV to 160 MeV. The emittance of the injected beam and the acceptance for accelerating and transporting the beam to the entrance of the extraction deflector were successfully measured. The relationship between the emittance and acceptance is visualized by displaying the results in the same phase-plane.
43 PARTICLE ACCELERATORS↗