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At least 73 records · Page 4

Improvement of critical current density in thallium-based (Tl,Bi)Sr(1.6)Ba(0.4)Ca2Cu3O(x) superconductors

Epitaxial (Tl,Bi)Sr(1.6)Ba(0.4)Ca2Cu3O(x) ((Tl,Bi)-1223) thin films on (100) single crystal LaAlO3 substrates were synthesized by a two-step procedure. Phase development, microstructure, and relationships between film and substrate were studied by X-ray diffraction (XRD), scanning electron microscopy (SEM), and transmission electron microscopy (TEM). Resistance versus temperature, zero-field-cooled and field cooled magnetization, and transport critical current density (J(sub c)) were measured. The zero-resistance temperature was 105-111 K. J(sub c) at 77 K and zero field was greater than 2 x 10(exp 6) A/sq cm. The films exhibited good flux pinning properties.

Ren, Z. F.

Aggregation Dynamics of Colloidal Particles in Tin Perovskite Crystalline Film Formation

We present an approach to understanding the crystallization of tin-based perovskite films for photovoltaic applications, starting from precursor suspensions processed via spin-coating. By integrating colloidal theory with the fluid dynamics of suspensions, this approach elucidates the influence of both chemical variables and process parameters on the crystallization pathways of perovskite suspensions and the resulting microstructural features of the solid films. Specifically, the incorporation of SnCl 2 as an additive was found to accelerate crystallization, whereas tBP induces a slowdown of the process leading, however, to a marked improvement in film uniformity and microstructural quality.

Crystallization

Sputter deposition of ultrathick Bi coatings onto rotating substrates for inertial confinement fusion

Sputter-deposited Bi is a potential candidate material for the production of inertial confinement fusion (ICF) hohlraums, which are sphero-cylindrical canisters that serve as the housing for hydrogen-fuel-filled capsules in ICF implosions. The fabrication of hohlraums involves deposition onto rotating sphero-cylindrical substrates and, hence, requires an understanding of oblique angle deposition phenomena. Here, we systematically study the effect of dynamic substrate tilt on properties of Bi films deposited onto rotating planar substrates. Results show that film morphology, porosity, and electrical resistivity depend on substrate tilt. In comparison with films deposited onto substrates adhered to a stationary sample holder, films deposited on rotating substrates have more uniform microstructure with fewer void defects. Based on Monte Carlo simulations, these changes in film morphology and microstructure are attributed to averaging and geometric effects related to sample position and rotation. In conclusion, the fabrication of an ∼ 50-µm-thick Bi film on a rotating sphero-cylindrical mandrel demonstrates a significant step toward the production of Bi hohlraums.

Bismuth

Variation of the Passive Film on Compositionally Concentrated Dual-Phase Al 0.3 Cr 0.5 Fe 2 Mn 0.25 Mo 0.15 Ni 1.5 Ti 0.3 and Implications for Corrosion

The passive film on a dual-phase Al 0.3 Cr 0.5 Fe 2 Mn 0.25 Mo 0.15 Ni 1.5 Ti 0.3 FCC + Heusler (L2 1 ) compositionally concentrated alloy formed during extended exposure to an applied potential in the passive range in dilute chloride solution was characterized. Each phase, with its own distinct composition of passivating elements, formed unique passive films separated by a heterophase interface. High-resolution, surface sensitive characterization enabled chemical analysis of the passive film formed over individual phases. The film formed over the L2 1 phase had a higher concentration of Al, Ni, and Ti, while the film formed over FCC phase was of similar thickness but contained comparatively higher Cr, Fe, and Mo concentrations, consistent with the differences in bulk microstructure composition. The passive film was continuous across phase boundaries and the distribution of passivating elements (Al, Cr, and Ti) indicated both phases were independently passivated. Spatially resolved analysis of the surface chemistry of the dual-phase CCA revealed that the cation with the highest composition in passive film formed on the FCC phase was Cr (52.4 at. pct) and for the L2 1 phase was Ti (53.1 at. pct) despite the bulk concentration of each element being below 20 at. pct in their respective phases. Al, Cr, and Ti were enriched in both phases within the passive film relative to their respective bulk compositions. In parallel studies, single-phase alloys with compositions representative of the FCC and L2 1 phases were synthesized to evaluate the corrosion behavior of each phase in isolation. The corrosion behavior of the dual-phase alloy showed passivity evidenced by a pitting potential of 0.615 V SCE in 0.01 M NaCl. The pitting potential and other electrochemical parameters suggested a combination of behaviors of both single-phase samples, suggesting that the global corrosion behavior may be represented by a composite theory applied to phases, their area fractions, and interphase length. However, the interphase in the dual-phase CCA was a local corrosion initiation site and may limit localized corrosion protectiveness. The alloy design implications for optimization of second phase structure and morphology are discussed.

36 MATERIALS SCIENCE

Sputter coating of Nb₃Sn into SRF cavity using stoichiometric target

Nb₃Sn has emerged as a leading alternative material due to its higher superconducting critical temperature (Tc) and superheating field (Hsh), promising a viable solution to the intrinsic performance limit currently faced by Nb superconducting radiofrequency (SRF) cavities. We sputter-coated Nb₃Sn inside Nb SRF cavity using a stoichiometric Nb₃Sn tube target in a DC cylindrical magnetron sputter coater. The target was fabricated by growing an estimated >20 μm thick Nb₃Sn layer on a Nb tube via Sn vapor diffusion using Jefferson Lab’s coating system. Approximately 150 nm thick Nb-Sn films were sputter-deposited onto flat Nb samples at positions representing the beam tubes and equator of a 2.6 GHz Nb cavity. Post-deposition annealing at 950 °C for 3 h resulted in the formation of Nb₃Sn. Microstructural analysis of the annealed films was carried out to investigate the morphology and structure of the Nb₃Sn films. Later, a 2.6 GHz Nb SRF cavity was coated with a ~1.2 μm thick sputtered Nb-Sn film using a stoichiometric Nb₃Sn target, followed by annealing. Cryogenic RF testing of the annealed cavity demonstrated a Tc of 17.8 K, indicating the formation of Nb₃Sn. After a light Sn recoating treatment, the cavity achieved a quality factor (Q0) of 6.7E+08 at lower field at 2.0 K.

Accelerator Physics

Characterization of (Ba(0.5)Sr(0.5)) TiO3 Thin Films for Ku-Band Phase Shifters

The microstructural properties of (Ba(0.5)Sr(0.5)TiO3) (BSTO) thin films (300, 700, and 1400 nm thick) deposited on LaAlO3 (LAO) substrates were characterized using high-resolution x-ray diffractometry. Film crystallinity was the parameter that most directly influenced tunability, and we observed that a) the crystalline quality was highest in the thinnest film and progressively degraded with increasing film thickness; and b) strain at the film/substrate interface was completely relieved via dislocation formation. Paraelectric films such as BSTO offer an attractive means of incorporating low-cost phase shifter circuitry into beam-steerable reflectarray antennas.

Mueller, Carl H.

Activity Convergence between Continuous- and Pulsed-Deposition NiFe Hydroxide Anodes in Liquid Alkaline Electrolyzers

Improving the activity of anodes for the alkaline oxygen evolution reaction (OER) is of interest because of the importance of the reaction in electrochemical technology. There is an abundance of studies which confirm that NiFe hydroxide, often prepared by electrodeposition, is the most active catalyst for the alkaline OER. This relatively high level of confidence in the optimal OER catalyst chemistry suggests that exploration of methods which improve on features besides the chemistry of the films, such as their microstructure, could access new heights of activity. In this study, the possible benefits of pulsed current deposition relative to the conventional continuous current approach to the deposition of NiFe hydroxides were investigated. Pulsed deposition densified the film surfaces by preventing metal ion depletion at the electrode surface during film formation. The Fe content, redox reversibility, and OER activity were higher for the pulsed deposition films relative to their continuous deposition counterparts. Though pulsed deposition imparted a higher OER performance of the films compared to continuous deposition at the three-electrode level, this improved performance was not retained during electrolyzer operation. Rather, a convergence of the cell performance is seen irrespective of the deposition approach. This phenomenon was attributed to the way electrolyzer conditionsrelatively high temperature, base concentration, and current densitycan drive alternate mechanisms for observed performance.

08 HYDROGEN

(abstract) Optical Scattering and Surface Microroughness of Ion Beam Deposited Au and Pt Thin Films

Thin films of gold and platinum have been deposited onto superpolished fused silica substrates using thermal evaporation, ion assisted deposition (IAD), and ion assisted sputtering. The influence of ion beam flux, thin film material, and deposition rate on the films microroughness have been investigated. Short range surface microroughness of the films has been examined using scanning tunneling microscopy (STM) and atomic force microscopy (AFM). Long range surface microroughness has been characterized using an angle resolved optical scatterometer. Results indicate that ion beam deposited coatings have improved microstructure over thermally evaporated films.

assisted sputtering fused silica ion beam microrou

Determination of Scale Bar for AGHCF Metallography Data

The DOE Nuclear Energy Advanced Reactor Technologies (ART) Fast Reactor Program (FRP) has supported the development of several databases containing information on the safety performance of fast reactors, components, and fuels. This growing collection of legacy experimental data, operating data, and analysis is available online to registered users. Metallography data represents one of the most critical types of post-irradiation examination (PIE) data being collected, organized, and archived in several ART Fast Reactor Databases (https://frdb.ne.anl.gov), including the Metallic Fuels Irradiation & Physics Database (FIPD), Out-of-Pile Transient Database (OPTD), and TREAT (the Transient Reactor Test Facility) Experimental Relational Database (TREXR). These databases contain three principal sets of metallography data. The first set comprises metallography data from Experimental Breeder Reactor-II (EBR-II) and Fast Flux Test Facility (FFTF) irradiated fuel pins examined in the Hot Fuel Examination Facility (HFEF). The second set consists of metallography data from EBR-II irradiated fuel pins examined in the Alpha-Gamma Hot Cell Facility (AGHCF). The third set includes metallography data from transient-tested fuel pins (including both out-of-pile furnace tests and TREAT tests) examined in AGHCF. Since both the second and third sets were generated in AGHCF, they are governed by identical specifications. The metallography data in the databases consist of digital images scanned from either positive or negative photographic films. To analyze the microstructure of a fuel pin, a series of preparatory steps are required, including sectioning, epoxy mounting, mechanical grinding and polishing, and etching. Following sample preparation, specimens are transferred for metallographic examination. The AGHCF and HFEF metallography data were generated using optical microscopes manufactured by Leitz and Bausch and Lomb (B&L). Images were recorded on Polaroid film at preset magnifications. Magnification verification for the Leitz and B&L metallographs was conducted every two months prior to 1989 and at least every six months from 1989 through the conclusion of the IFR program. Magnifications determined from imaging of microslide standards were compared to the instrument settings for magnifications ranging from 50× to 500×. If the magnifications determined from standards deviated from the instrument settings, adjustments were made to the bellows extension until agreement was achieved. The specifications for AGHCF and HFEF legacy metallography data have been established based on available hard-copy and digital records, most of which have been incorporated into the data repositories associated with FIPD, OPTD, and TREXR. Detailed specifications including hard-copy records, digitized records, cutting diagrams and sectioning schemes, high-magnification photographs, photomosaics (composites), information tags, scale bars, and magnification verification procedures can be found in a separate report.

22 GENERAL STUDIES OF NUCLEAR REACTORS

Microstructural, Magnetic Anisotropy, and Magnetic Domain Structure Correlations in Epitaxial FePd Thin Films with Perpendicular Magnetic Anisotropy

L1(sub 0)-ordered FePd epitaxial thin films were prepared using dc magnetron sputter deposition on MgO (001) substrates. The films were grown with varying thickness and degree of chemical order to investigate the interplay between the microstructure, magnetic anisotropy, and magnetic domain structure. The experimentally measured domain size/period and magnetic anisotropy in this high perpendicular anisotropy system were found to be correlated following the analytical energy model proposed by Kooy and Enz that considers a delicate balance between the domain wall energy and the demagnetizing stray field energy.

Skuza, J. R.

Ultra-Sensitive Magnetoresistive Displacement Sensing Device

An ultrasensitive displacement sensing device for use in accelerometers, pressure gauges, temperature transducers, and the like, comprises a sputter deposited, multilayer, magnetoresistive field sensor with a variable electrical resistance based on an imposed magnetic field. The device detects displacement by sensing changes in the local magnetic field about the magnetoresistive field sensor caused by the displacement of a hard magnetic film on a movable microstructure. The microstructure, which may be a cantilever, membrane, bridge, or other microelement, moves under the influence of an acceleration a known displacement predicted by the configuration and materials selected, and the resulting change in the electrical resistance of the MR sensor can be used to calculate the displacement. Using a micromachining approach, very thin silicon and silicon nitride membranes are fabricated in one preferred embodiment by means of anisotropic etching of silicon wafers. Other approaches include reactive ion etching of silicon on insulator (SOI), or Low Pressure Chemical Vapor Deposition of silicon nitride films over silicon substrates. The device is found to be improved with the use of giant magnetoresistive elements to detect changes in the local magnetic field.

Olivas, John D.

LiCoO2 and SnO2 Thin Film Electrodes for Lithium-Ion Battery Applications

There is an increasing need for small dimension, ultra-lightweight, portable power supplies due to the miniaturization of consumer electronic devices. Rechargeable thin film lithium-ion batteries have the potential to fulfill the growing demands for micro-energy storage devices. However, rechargeable battery technology and fabrication processes have not kept paced with the advances made in device technology. Economical fabrication methods lending excellent microstructural and compositional control in the thin film battery electrodes have yet to be fully developed. In this study, spin coating has been used to demonstrate the flexibility of the approach to produce both anode (SnO2) and cathode (LiCoO2) thin films. Results on the microstructure crystal structure and electrochemical properties of the thin film electrodes are described and discussed.

Maranchi, Jeffrey P.

Mechanisms of Three-Dimensional Solid-Phase Epitaxial Crystallization of Strontium Titanate

Strontium titanate (SrTiO 3 , STO) is a complex metal oxide with a cubic perovskite crystal structure. Due to its easily described and understood crystal structure in the cubic phase, STO is an ideal model system for exploring the mechanistic details of solid-phase epitaxy (SPE) in complex oxides. SPE is a crystallization approach that aims to guide crystal growth at low homologous temperatures to achieve targeted microstructures. Beyond planar thin films, SPE can also exploit the addition of a chemically inert, noncrystallizing, amorphous obstacle in the path of crystallization to generate complex three-dimensional structures. The introduction of this mask fundamentally alters the SPE process, inducing a transition from two- to three-dimensional geometries and from vertical to lateral crystal growth under the influence of the crystal/mask/amorphous boundary. Using a combination of molecular dynamics simulations and experiments, we identify several unique phenomena in the nanoscale growth behaviors in both conventional (unmasked) and masked SPE. Examining conventional SPE of STO, we find that crystallization at the interface is strongly correlated to, and potentially driven by, density fluctuations in the region of the amorphous STO near the crystalline/amorphous interface with a strong facet dependence. In the masked case, we find that the crystalline growth front becomes nonplanar near contact with the mask. We also observe a minimum vertical growth requirement prior to lateral crystallization. Both phenomena depend on the relative bulk and interfacial free energies of the three-phase (crystal/mask/amorphous) system.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH

High-Rate Sputter Deposition of Ultrathick Boron Carbide Coatings on Rolling Spherical Substrates

Amorphous boron carbide (B 4 C) is a promising next-generation ablator material for inertial confinement fusion. However, the deposition of ultrathick B4C coatings with submicron-scale density uniformity on spherical substrates, as required for ablator shell fabrication, remains challenging. Here, in this study, we use direct current magnetron sputtering to deposit B 4 C onto 2-mm-diameter Si spheres rolling in a dish-shaped substrate holder. High deposition rates of ∼3 μm/h are achieved. Ultrathick films have a columnar microstructure, with the column width determined by the density of nodular defects. Nodular defect nucleation is dominated by the pickup of particulates from the holder during substrate rolling. We demonstrate the fabrication of a hollow B 4 C spherical shell with a wall thickness of 80 μm. Also demonstrated is the laser machining of holes in the B 4 C coating, which is necessary for both the chemical removal of the Si template and the attachment of a fusion fuel fill tube.

Inertial confinement fusion targets

Gravitational Effects on the Morphology and Kinetics of Photodeposition of Polydiacetylene Thin Films From Monomer Solutions

The goal of this proposed work is to study gravitational effects on the photodeposition of polydiacetylene thin films from monomer solutions onto transparent substrates. Polydiacetylenes have been an extensively studied class of organic polymers because they exhibit many unusual and interesting properties, including electrical conductivity and optical nonlinearity. Their long polymeric chains render polydiacetylenes readily conducive to thin film formation, which is necessary for many applications. These applications require thin polydiacetylene films possessing uniform thicknesses, high purity, minimal inhomogeneities and defects (such as scattering centers), etc. Also, understanding and controlling the microstructure and morphology of the films is important for optimizing their electronic and optical properties. The lack of techniques for processing polydiacetylenes into such films has been the primary limitation to their commercial use. We have recently discovered a novel method for the formation of polydiacetylene thin films using photo-deposition from monomer solutions onto transparent substrates with UV light. This technique is very simple to carry out, and can yield films with superior quality to those produced by conventional methods. Furthermore, these films exhibit good third-order properties and are capable of waveguiding. We have been actively studying the chemistry of diacetylene polymerization in solution and the photo-deposition of polydiacetylene thin films from solution. It is well-known that gravitational factors such as buoyancy-driven convection and sedimentation can affect chemical and mass transport processes in solution. One important aspect of polydiacetylene thin film photodeposition in solution, relevant to microgravity science, is that heat generated by absorption of UV radiation induces thermal density gradients that under the influence of gravity, can cause fluid flows (buoyancy-driven convection). Additionally, changes in the chemical composition of the solution during polymerization may cause solutal convection. These fluid flows affect transport of material to and from the film surface and thereby affect the kinetics of the growth process. This manifests itself in the morphology of the resulting films; films grown under the influence of convection tend to have less uniform thicknesses, and can possess greater inhomogeneities and defects. Specifically, polydiacetylene films photodeposited from solution, when viewed under a microscope, exhibit very small particles of solid polymer which get transported by convection from the bulk solution to the surface of the growing film and become embedded. Even when carried out under conditions designed to minimize unstable density gradients (i.e., irradiating the solution from the top), some fluid flow still takes place (particles remain present in the films). It is also possible that defect nucleation may be occurring within the films or on the surface of the substrate; this, too, can be affected by convection (as is the case with crystal growth). Hence films grown in 1-g will, at best, still possess some defects. The objective of this proposal is to investigate, both in 1-g and in low-g, the effects of gravitational factors (primarily convection) on the dynamics of these processes, and on the quality, morphology, and properties of the films obtained.

Paley, Mark S.

Effects of hydrogen on sputter-deposited boron carbide films

Sputter deposition of B 4 C films requires precise control over the microstructure and the nucleation and growth of nodular defects. Here, we study the properties of B 4 C films deposited with substrate holder temperatures of 250, 450, or 510 °C and different substrate tilt angles by direct-current magnetron sputtering in either pure Ar or a mixture of 4% H 2 in Ar as the working gas. Results show that the addition of H 2 reduces the impedance of the plasma discharge, resulting in larger discharge currents at constant power, which is attributed to a lower ionization potential of H 2 than Ar. More importantly, films deposited with the H 2 containing plasma exhibit lower oxygen impurity incorporation, a lower density of nodular defects, and suppressed columnar microstructure. These results demonstrate the effectiveness of such a plasma doping approach to improve the properties of B 4 C films.

Wong, M. S. [Lawrence Livermore National Laborator

Effect of Nb2O5 and V2O5 addition on the superconducting properties of YBa2Cu3O(y) thin films

The effect of Nb2O5 and V2O5 addition on the superconducting properties and microstructure of YBa2Cu3O(y) has been studied in thin films. Polycrystalline targets for laser ablation were prepared by mixing high purity V2O5 or Nb2O5 powders with a well characterized YBa2Cu3O(y) powder in the range 0 to 4 wt percent by solid state reaction method. Thin films (approximately 1500 A thickness) of the above targets were grown on (100) SrTiO3 (STO) and (100) LaAlO3 (LAO) substrates at 700 C temperature by pulsed laser deposition (PLD) technique. In the case of Nb2O5 addition we have noticed an increase in J(sub c) up to 0.5 wt percent and higher additive concentration (greater than 0.5 wt percent) have degraded the superconducting properties. However, in the case of V2O3 addition, there is an improvement in current density and microstructural properties up to 1 wt percent and the superconducting properties degrade for concentrations greater than 1 wt percent. The best J(sub c) for 0.5 wt percent of Nb2O5 added YBCO thin film is 1.6 x 10(exp 6) A/sq cm and for that of V2O5 added sample is 3.4 x 10(exp 6) A/sq cm at 77 K as compared to the pure YBa2Cu3O(y) (YBCO) film J(sub c) (1.2 x 10(exp 6) A/sq cm) observed on STO substrates. The reason for improvement in J(sub c) and microstructural properties in the case of V2O5 addition could be due to the low melting of V2O5 (690 C) which can act as a very good surfactant during deposition. Over all, we have realized that Nb2O5 addition or V2O5 addition to YBCO have shown significant improvement over the undoped YBa2Cu3O(7-x) films grown under identical conditions.

Srinivas, S.