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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

First experimental measurements with the Segmented Inverted-coaxial GerMAnium (SIGMA) detector

The SIGMA project aims to develop a p-type segmented inverted coaxial point contact germanium detector for gamma-ray tracking and imaging. Here the performance of the first prototype of this type of detector is reported. The measurements performed verified the size and shape of the crystal and determined the location of the complex active volumes of the detector segments. The latter determines the charge collection times that are related to the position of interaction. Good agreement is found between the results and the specified crystal design. The energy resolution of the point contact has been measured to be 0.84 keV and 2.21 keV at 122 keV and 1332 keV, respectively.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2024

High-purity germanium semiconductor modeling in the detector response function toolkit

In this study, we have extended the detector response function toolkit (DRiFT) to provide modeling capabilities of semiconductor sensors. DRiFT provides realistic nuclear instrumentation response by post-processing Monte-Carlo N-particle (MCNP®) radiation transport outputs. MCNP® is capable of modeling radiation transport in complex environments, but has limited detector physics and readout electronics modeling capabilities. Semiconductor detector response can be calculated with a high-fidelity for a flexible range of environments by utilizing MCNP® to simulate radiation interactions inside of detector volumes, and then using DRiFT to model charge transport and signal formation in the semiconductor, as well as the readout electronics. DRiFT models charge transport in the semiconductor, the preamplifier, shaping amplifier, pulse pile-up, and electronic noise to generate detector response. The semiconductor application in DRiFT can model a range of semiconductor materials, shapes, and sizes; and is demonstrated here for a large volume coaxial high-purity germanium (HPGe) detector. Here, we compare detector response functions of a coaxial HPGe detector with measurement of 60 Co, 133 Ba, and 137 Cs at varying count rates, and we conduct a parameter study to demonstrate the effect of changing parameters in the DRiFT simulation. The HPGe detector response function shows excellent agreement with measurements of difference sources with varying dead times and count rates.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2025

Magnetic Proximity Effects in Iron Germanium Telluride/Platinum Heterostructures

Van der Waals (vdW) magnetic materials have attracted considerable attention for use in spintronic devices such as those controlled by spin–orbit torque (SOT). Such SOT-driven devices are typically fabricated by bringing a vdW magnet in proximity to a spin–charge conversion layer to achieve current-driven magnetization switching. Here, we show that such structures fabricated with iron germanium telluride (FGT) and platinum can exhibit emergent magnetic properties, which we attribute to magnetic proximity effects at the FGT/Pt interface. These changes manifest as increased perpendicular magnetic anisotropy and the emergence of additional magnetization reversal steps as probed by magneto-transport, with the most significant changes appearing in thinner flakes. The behavior was found to be robust and consistently appeared in samples made with crystals from different vendors. In conclusion, our results demonstrate the potential for engineering vdW spintronic systems through magnetic proximity effects.

2D magnet↗
DOE OSTI2025

Colloidal Germanium Quantum Dots with Broadly Tunable Size and Light Emission

Germanium (Ge) colloidal quantum dots (CQDs) were synthesized by thermal decomposition of GeI 2 using capping ligand mixtures of oleylamine (OAm), octadecene (ODE), and trioctylphosphine (TOP). Average diameters could be tuned across a wide range, from 3 to 18 nm, by adjusting reactant concentrations, heating rates, and reaction temperatures. OAm promotes decomposition of GeI 2 to Ge and serves as a weakly bound capping ligand. ODE displaces OAm during the reaction to terminate particle growth and prevent surface oxidation. TOP is necessary for obtaining nanocrystals larger than 11 nm. In conclusion, the Ge CQDs have relatively narrow size distributions and exhibit size-dependent, band-edge photoluminescence (PL), with peak energies from 0.8 to 1.34 eV, across a wide spectral range in the infrared (IR).

Noh, Jungchul [Univ. of Texas, Austin, TX (United ↗
DOE OSTI2022

High-quality microresonators in the longwave infrared based on native germanium

The longwave infrared (LWIR) region of the spectrum spans 8 to 14 μm and enables high-performance sensing and imaging for detection, ranging, and monitoring. Chip-scale LWIR photonics has enormous potential for real-time environmental monitoring, explosive detection, and biomedicine. However, realizing technologies such as precision sensors and broadband frequency combs requires ultra low-loss and low-dispersion components, which have so far remained elusive in this regime. Here, we use native germanium to demonstrate the first high-quality microresonators in the LWIR. These microresonators are coupled to partially-suspended Ge waveguides on a separate glass chip, allowing for the first unambiguous measurements of isolated linewidths. At 8 μm, we measured losses of 0.5 dB/cm and intrinsic quality (Q) factors of 2.5 × 10 5 , nearly two orders of magnitude higher than prior LWIR resonators. Our work portends the development of novel sensing and nonlinear photonics in the LWIR regime.

47 OTHER INSTRUMENTATION↗
DOE OSTI2025

First-Principles insights into group-V impurities and their impact on germanium detector performance

The outstanding properties of high-purity germanium (HPGe) detectors, such as excellent energy resolution, high energy sensitivity, and a low background-to-signal ratio, make them essential and ideal candidates for detecting particle signatures in nuclear processes such as neutrino-less double beta decay (0νββ). However, the presence of defects and impurities in HPGe crystals can lead to charge trapping, which affects carrier mobility and results in significant energy resolution degradation. In this work, we employ density functional theory with a hybrid functional to study the energetics of possible point defects in Ge. Our findings indicate that group-V impurities form more readily in Ge compared to vacancy and interstitial of Ge. Unlike N dopants, which yield deep trap states, P, As, and Sb create shallow traps close to the conduction band edge of Ge. Furthermore, we predict that group-V defects can condense into defect complexes with Ge vacancies. These vacancy-impurity complexes form deep traps in Ge, similar to Ge vacancies, suggesting that both vacancies and vacancy-impurity complexes contribute to charge trapping in these detectors, thereby diminishing their performance.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Thermal conductivity of rutile germanium dioxide

Power electronics seek to improve power conversion of devices by utilizing materials with a wide bandgap, high carrier mobility, and high thermal conductivity. Due to its wide bandgap of 4.5 eV, b-Ga 2 O 3 has received much attention for high-voltage electronic device research. However, it suffers from inefficient thermal conduction that originates from its low-symmetry crystal structure. Rutile germanium oxide (r-GeO 2 ) has been identified as an alternative ultra-wide-bandgap (4.68 eV) semiconductor with predicted high electron mobility and ambipolar dopability; however, its thermal conductivity is unknown. Here, we characterize the thermal conductivity of r-GeO 2 as a function of temperature by first-principles calculations, experimental synthesis, and thermal characterization. The calculations predict an anisotropic phonon-limited thermal conductivity for r-GeO 2 of 37W m –1 K –1 along the a direction and 58W m –1 K –1 along the c direction at 300K where the phonon-limited thermal conductivity predominantly occurs via the acoustic modes. Experimentally, we measured the value of 51W m –1 K –1 at 300K for hot-pressed, polycrystalline r-GeO2 pellets. The measured value is close to our directionally averaged theoretical value, and the temperature dependence of ~1/T is also consistent with our theory prediction, indicating that thermal transport in our r-GeO 2 samples at room temperature and above is governed by phonon scattering. Furthermore, our results reveal that high-symmetry UWBG materials, such as r-GeO 2 , may be the key to efficient power electronics.

36 MATERIALS SCIENCE↗
DOE OSTI2020

First-principles study and experimental characterization of metal incorporation in germanium telluride

Germanium telluride is a well-known phase change material (PCM) used in non-volatile memory cells and radio frequency switches. Controlling the properties of GeTe for improved PCM device performance has sometimes been achieved by doping and/or alloying with metals, often at concentrations greater than 10 at. % and using non-equilibrium methods. Here, since switching PCMs between the low-resistance crystalline and high-resistance amorphous states requires a heating cycle, the stability of metal-incorporated GeTe (Ge 0.5–x M x Te 0.5 ) films is also critical to practical implementation of these materials in electronic and optoelectronic devices. In this work, we use both density-functional theory and experimental characterization methods to probe the solubility and critical properties of Ge 0.5–x M x Te 0.5 films. Using first-principles calculations, we determine the enthalpy of formation for GeTe with 2.08, 4.17, and 6.25 at. % of Cu, Fe, Mn, Mo, and Ti and show trends between the stability of the Ge 0.5–x M x Te 0.5 systems and the atomic position, composition, and distribution of the metal atoms in the GeTe matrix.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Optimization of gold germanium (Au 0.17 Ge 0.83 ) thin films for high sensitivity resistance thermometry

Gold–germanium (Au x Ge 1–x ) solid solutions have been demonstrated as highly sensitive thin film thermometers for cryogenic applications. However, little is known regarding the performance of the films for thicknesses less than 100 nm. In response, here we report on the resistivity and temperature coefficient of resistance (TCR) for sputtered films with thicknesses ranging from 10 to 100 nm and annealed at temperatures from 22 to 200°C. The analysis is focused upon composition x=0.17, which demonstrates a strong temperature sensitivity over a broad range. The thinnest films are found to provide an enhancement in TCR, which approaches 20% K –1 at 10 K. Furthermore, reduced anneal temperatures are required to crystallize the Ge matrix and achieve a maximum TCR for films of reduced thickness. These features favor the application of ultra-thin films as high-sensitivity, on-device thermometers in micro- and nanolectromechanical systems.

59 BASIC BIOLOGICAL SCIENCES↗
DOE OSTI2025

Off-state magnetoresistance in long-channel germanium Schottky-barrier MOSFETs

An increasing magnetic field perpendicular to an undoped semiconductor surface at low temperature is known to strengthen the binding of localized electrons to stationary ions, as the wavefunction's tails evolve from exponential to Gaussian. It is also known that application of a high bias voltage to a depleted semiconductor can liberate bound charge and induce a large drop in electrical resistance. We connect these established results to experimental electrical transport measurements on off-state germanium Schottky-barrier metal–oxide–semiconductor field-effect transistor (MOSFETs) with an aluminum oxide insulating dielectric and platinum germanide contacts. We make measurements at the three distinct orientations of the magnetic field with respect to the substrate and the current. At 6 K, we observe sharp attenuation of current by more than 2 orders of magnitude, within 60 mT, at a crossover magnetic field perpendicular to the substrate. A 1 T magnetic field attenuates the current by more than 4 orders of magnitude. The strength of the attenuation and the value of the crossover field are controlled by both the gate–source and drain–source voltages. The attenuation is much weaker when the magnetic field is parallel to the current. Finally, we orient the magnetic field parallel to the substrate, but perpendicular to the current, allowing us to distinguish charge hopping at the oxide interface from charge hopping in the bulk. In conclusion, this large off-state magnetoresistance can be exploited for cryogenic magnetic- and photo-detection, and for high-bias, low-leakage MOSFETs.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2025

Dynamics of the transition from the metastable tetragonal st12 to the diamond-cubic phase in germanium characterized by neutron spectroscopy

The complex phase diagram of germanium allows for exotic crystalline phases recoverable from high pressure. Among these, the tetragonal st12 phase is unusual as it shares characteristics with amorphous Ge resulting in desirable band-gap characteristics. Here, we leverage a high neutron flux and large volume pressure capabilities to characterize st12-Ge and its dynamics upon conversion to diamond-cubic Ge with inelastic neutron scattering. Here, we exploit the characteristics of time-of-flight neutron scattering for time-resolved investigations. This analysis may suggest the existence of a transient disordered state upon annealing befitting the known structural relationship between st12-Ge and amorphous Ge, a relationship that can open the potential for band-gap tuning.

Elemental semiconductors↗
DOE OSTI2020

Itinerant ferromagnetism and intrinsic anomalous Hall effect in amorphous iron-germanium

The amorphous iron-germanium system ( a - Fe x Ge 1 - x ) lacks long-range structural order and hence lacks a significant Brillouin zone. The magnetization of a - Fe x Ge 1 - x is well explained by the Stoner model for Fe concentrations x above the onset of magnetic order around x = 0.4 , indicating that the local order of the amorphous structure preserves the spin-split density of states of the Fe- 3 d states sufficiently to polarize the electronic structure despite k being a bad quantum number. Measurements reveal an enhanced anomalous Hall resistivity ρ x y AH relative to crystalline FeGe; this ρ x y AH is compared to density-functional theory calculations of the anomalous Hall conductivity to resolve its underlying mechanisms. The intrinsic mechanism, typically understood as the Berry curvature integrated over occupied k states but shown here to be equivalent to the density of curvature integrated over occupied energies in aperiodic materials, dominates the anomalous Hall conductivity of a - Fe x Ge 1 - x ( 0.38 ≤ x ≤ 0.61 ). The density of curvature is the sum of spin-orbit correlations of local orbital states and can hence be calculated with no reference to k space. This effect and the accompanying Stoner-like model for the intrinsic anomalous Hall conductivity establish a unified understanding of the underlying physics of the anomalous Hall effect in both crystalline and disordered systems.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Evolution of low-lying M1 modes in germanium isotopes

Magnetic dipole strength functions are determined for the series of germanium isotopes from N=Z=32 to N = 48 on the basis of a large number of transition strengths calculated within the shell model. The evolution of the strength with increasing neutron number in the 1g 9/2 orbital is analyzed. A bimodal structure comprising an enhancement toward low transition energy and a resonance in the region of the scissors mode is identified. The low-energy enhancement is strongest near closed shells, in particular at the almost completely filled 1g 9/2 orbital, while the scissorslike resonance is most pronounced in the middle of the open shell, which correlates with the magnitude of the also deduced electric quadrupole transition strengths. The results are consistent with previous findings for the shorter series of iron isotopes and prove the occurrence and correlation of the two low-lying magnetic dipole modes as a global structural feature.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2020

Localized excitons in defective monolayer germanium selenide

Germanium selenide (GeSe) is a van der Waals–bonded layered material with promising optoelectronic properties, which has been experimentally synthesized for two-dimensional (2D) semiconductor applications. In the monolayer, due to reduced dimensionality and, thus, screening environment, perturbations such as the presence of defects have a significant impact on its properties. We apply density functional theory and many-body perturbation theory to understand the electronic and optical properties of GeSe containing a single selenium vacancy in the –2 charge state. We predict that the vacancy results in midgap “trap states” that strongly localize the electron and hole density and lead to sharp, low-energy optical absorption peaks below the predicted pristine optical gap. Analysis of the exciton wave function reveals that the 2D Wannier-Mott exciton of the pristine material monolayer is strongly modified by the presence of the defect. The lowest-energy exciton wave function is highly localized around the defect, with the Bohr radius reduced by a factor of 4 when compared to the pristine material and a dipole moment along the out-of-plane axis due to the defect-induced symmetry breaking. Altogether, these results suggest that the vacancy significantly modifies the excitonic properties of the system, demonstrating the importance of considering defects in the context of material design.

2-dimensional systems↗
DOE OSTI2021

Crystal structures of metallocene complexes with uranium–germanium bonds

The first structural examples of complexes with uranium–germanium bonds are presented, namely, bis[3,5-bis(trifluoromethyl)phenyl-2κ C 1 ](hydrido-2κ H )(iodido-1κ I )bis[1,1(η 5 )-pentamethylcyclopentadienyl]germaniumuranium( Ge — U ), [GeU(C 10 H 15 ) 2 (C 8 H 3 F 6 ) 2 HI], and bis[3,5-bis(trifluoromethyl)phenyl-2κ C 1 ](fluorido-1κ I )(hydrido-2κ H )bis[1,1(η 5 )-pentamethylcyclopentadienyl]germaniumuranium( Ge — U ), [GeU(C 10 H 15 ) 2 (C 8 H 3 F 6 ) 2 FH]. The two complexes both have a long U—Ge bond [distances of 3.0428 (7) and 3.0524 (7) Å].

Tarlton, Michael L.↗
DOE OSTI2025

Atomic layer deposited aluminum nitride for interface protection of lithium germanium thiophosphate solid electrolytes

Lithium germanium thiophosphate (LGPS) is an attractive solid-state electrolyte material due to its exceptionally high ionic conductivity (~1.2 × 10 –2 S cm –1 ), comparable to many organic liquid electrolytes commonly used in batteries. Despite the high conductivity of LGPS, the susceptibility of LGPS to deleterious degradation reactions has impeded its commercial adoption into solid-state batteries. In particular, the poor voltage stability of LGPS with high-voltage cathode or lithium metal potentials often results in dramatically increasing cell impedance during galvanic cycling. Here, we use aluminum nitride (AlN) as a protection layer for Li metal anode, applied directly to the LGPS at 250 °C using plasma-enhanced atomic layer deposition, to enhance cell performance by preventing LGPS-Li metal reactions. We compare the surface chemistry and electrochemical cycling performance of atomic layer-deposited AlN grown using both plasma N 2 and NH 3 precursors. Galvanostatic cycling and electrochemical impedance spectroscopy show that AlN-coated LGPS cells perform better than bare LGPS cells in contact with Li metal anodes, with the AlN able to improve cycling longevity by over a factor of 3 in certain cases. Finally, we utilize x-ray photoelectron spectroscopy (XPS) line scans to highlight the slow room-temperature reactivity between AlN and evaporated lithium metal, and a computational model is built to aid further XPS analysis.

25 ENERGY STORAGE↗
DOE OSTI2020

The impact of the charge barrier height on Germanium (Ge) detectors with amorphous-Ge contacts for light dark matter searches

Germanium (Ge) detectors with ability of measuring a single electron–hole (e–h) pair are needed in searching for light dark matter (LDM) down to the MeV scale. We investigate the feasibility of Ge detectors with amorphous-Ge (a-Ge) contacts to achieve the sensitivity of measuring a single e-h pair, which requires extremely low leakage current. Three Ge detectors with a-Ge contacts are used to study the charge barrier height for blocking electrons and holes. Using the measured bulk leakage current and the Döhler–Brodsky model, we obtain the values for charge barrier height and the density of localized energy states near the Fermi energy level for the top and bottom contacts, respectively. We predict that the bulk leakage current is extremely small and can be neglected at helium temperature ( $$\sim $$ ~ 4 K). Thus, Ge detectors with a-Ge contacts possess the potential to measure a single e–h pair for detecting LDM particles.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2022

Development of planar P-type point contact germanium detectors for low-mass dark matter searches

The detection of low-energy deposition in the range of sub-eV through ionization using germanium (Ge) with a bandgap of ~ 0.7 eV requires internal amplification of the charge signal. This can be achieved through high electric field that accelerates charge carriers, which can then generate more charge carriers. The minimum electric field required to generate internal charge amplification is derived for different temperatures. We report the development of a planar point contact Ge detector in terms of its fabrication and the measurements of its leakage current and capacitance as a function of applied bias voltage. With the determination of the measured depletion voltage, the field distribution is calculated using GeFiCa, which predicts that the required electric field for internal charge amplification can be achieved in proximity to the point contact. The energy response to an Am-241 source is characterized and discussed. We conclude that such a detector with internal charge amplification can be used to search for low-mass dark matter.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗