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ABSTRACT. We have demonstrated a bound to continuum state GaAs/Al(x)Ga(1-x)As infrared hot electron transistor which has a peak response at lambda(sub p) = 16.3 micrometers. An excellent photo-current transfer ratio of alpha(sub p) = 0.12 and very low dark current transfer ratio of alpha(sub d) = 7.2 x 10(exp 5) is achieved at a temperature of T = 60 K.
We have obtained the first data on the multiplexed operation of titanium hot-electron bolometers (HEB). Because of their low thermal conductance and small electron heat capacity nanobolometers are particularly interesting as sensors for far-infrared spectroscopy and mid- and near-IR calorimetry. However, the short time constant of these devices (approximately microseconds at 300-400 mK) makes time domain or audio-frequency domain multiplexing impractical. The Microwave SQUID (MSQUID) approach pursued in this work uses dc SQUIDs coupled to X-band microresonators which are, in turn, coupled to a transmission line. We used a 4-element array of Ti HEBs operated at 415 mK in a He3 dewar with an optical fiber access. The microwave signal exhibited 10-MHz wide resonances at individual MSQUD frequencies between 9 GHz and 10 GHz. The resonance depth is modulated by the current through the bolometer via a change of the SQUID flux state. The transmitted signal was amplified by a cryogenic amplifier and downconverted to baseband using an IQ mixer. A 1-dB per ??/2 responsivity was sufficient for keeping the system noise at the level of ~ 2 pA/Hz1/2. This is more than an order of magnitude smaller than phonon noise in the HEB. The devices were able to detect single near- IR photons (1550 nm) with a time constant of 3.5 ?s. Follow-on work will scale the array to larger size and will address the microwave frequency signal generation and processing using a digital transceiver.
We have developed a 1.5 THz superconducting NbN Hot-Electron Bolometer mixer. It is oprated by an all-solid-state Local Oscillator comprising of a cascade of 4 planar doublers following an MMIC based W-band power amplifier.
A new theoretical model is introduced to describe heterodyne mixer conversion efficiency and noise (from thermal fluctuation effects) in diffusion-cooled superconducting hot-electron bolometers. The model takes into account the non-uniform internal electron temperature distribution generated by Wiedemann-Franz heat conduction, and accepts for input an arbitrary (analytical or experimental) superconducting resistance-versus- temperature curve. A non-linear large-signal solution is solved iteratively to calculate the temperature distribution, and a linear frequency-domain small-signal formulation is used to calculate conversion efficiency and noise. In the small-signal solution the device is discretized into segments, and matrix algebra is used to relate the heating modulation in the segments to temperature and resistance modulations. Matrix expressions are derived that allow single-sideband mixer conversion efficiency and coupled noise power to be directly calculated. The model accounts for self-heating and electrothermal feedback from the surrounding bias circuit.
A novel contact regrowth technique for the formation of extremely low nonalloyed ohmic contacts is reported. The successful demonstration of this technique is reported on an InGaAs/InAlAs hot-electron transistor device. For the investigated InGaAs-based structure, the regrown contacting scheme reported includes an In(0.53)Ga(0.47)As layer, an InAs/GaAs strained-layer superlattice, and an InAs cap, all heavily doped n type with Si. A very low specific contact resistance of 1.8 x 10 to the -7th ohm sq cm to the base layer is obtained. The higher current densities achieved in the transistor characteristics are in close agreement with calculations, and a contact model is presented explaining the poor results of conventional nonalloyed contacts.
A new approach is proposed to improve the sensitivity of direct-detection bolometers. The idea is to adjust a speed of the thermal relaxation of hot-electrons in a nanometer size normal metal or superconductive transition edge bolometer by controlling the elastic electron mean free path. If the bolometer contacts are made of a superconductor with high critical temperature then the thermal diffusion into the contacts is absent because of the Andreev's reflection and the electron-phonon relaxation is the only mechanism for heat removal. The relaxation rate should behave as 7(exp 4)l at subkelvin temperatures (l is the electron elastic mean free path) and can be reduced by factor of 10 - 100 by decreasing l. Then an antenna- or waveguide-coupled bolometer with a time constant approx. 10(exp -3) to 10(exp -5) S at T approx. = 0.1 - 0.3 K will exhibit photon-noise limited performance in millimeter and subn-millimeter range. The bolometer will have a figure-of-merit NEk square root of tau approx. = 10(exp -22) 10(exp -21) W/Hz at 100 mK which is 10(exp 3) times smaller than that of a state-of-the-art bolometer. This will allow for a tremendous increase in speed which will have a significant impact for observational mapping applications. Alternatively, the bolometer could operate at higher temperature with still superior sensitivity This research was performed by the Center for Space Microelectronics Technology, JPL, California Institute of Technology, under the contract for NASA.
A new approach is proposed to improve the sensitivity of direct-detection bolometers at millimeter, submillimeter and far-infrared wavelengths. The idea is to adjust a speed of the thermal relaxation of hot-electrons in a nanometer size normal metal or super-conductive transition edge bolometer by controlling the elastic electron mean free path. If the bolometer contacts are made of a superconductor with high critical temperature (Nb, Pb etc.) then the thermal diffusion into the contacts is absent because of the Andreev's reflection and the electron-phonon relaxation is the only mechanism for heat removal. The relaxation rate should behave as T(sup 4)l at subkelvin temperatures (l is the electron elastic mean free path) and can be reduced by factor of 10-100 by decreasing l. Then an antenna- or waveguide-coupled bolometer with a time constant about 10(exp -3) to 10(exp -5) s at T approximately equals 0.1-0.3 K will exhibit photon-noise limited performance in millimeter and submillimeter range. The choice of the bolometer material is a tradeoff between a low electron heat capacity and fabrication. A state-of-the-art bolometer currently offers NEP = 10(exp -17) W(Square root of (Hz)) at 100 mK along with a approximately equals 2 msec time constant. The bolometer we propose will have a figure-of-merit, NEP(square root (r)), which is 10(exp 3) times smaller. This will allow for a tremendous increase in speed which will have a significant impact for observational mapping applications. Alternatively, the bolometer could operate at higher temperature with still superior sensitivity. This device can significantly increase a science return and reduce the cost for future observational missions. This research was performed by the Center for Space Microelectronics Technology, Jet Propulsion Laboratory, California Institute of Technology, and was sponsored by NASA, Office of Space Science.
The millimeter and the submillimeter wavelengths of the electromagnetic spectrum hold a wealth of information about the evolution of the universe. In particular, cosmic microwave background (CMB) radiation and its polarization carry the oldest information in the universe, and provide the best test of the inflationary paradigm available to astronomy today. Detecting gravity waves through their imprint on the CMB polarization would have extraordinary repercussions for cosmology and physics. A transition-edge hot-electron micro - bolometer (THM) consists of a superconducting bilayer transition-edge sensor (TES) with a thin-film absorber. Unlike traditional monolithic bolometers that make use of micromachined structures, the THM em ploys the decoupling between electrons and phonons at millikelvin temperatures to provide thermal isolation. The devices are fabricated photolithographically and are easily integrated with antennas via microstrip transmission lines, and with SQUID (superconducting quantum interference device) readouts. The small volume of the absorber and TES produces a short thermal time constant that facilitates rapid sky scanning. The THM consists of a thin-film metal absorber overlapping a superconducting TES. The absorber forms the termination of a superconducting microstripline that carries RF power from an antenna. The purpose of forming a separate absorber and TES is to allow flexibility in the optimization of the two components. In particular, the absorbing film's impedance can be chosen to match the antenna, while the TES impedance can be chosen to match to the readout SQUID amplifier. This scheme combines the advantages of the TES with the advantages of planar millimeter-wave transmission line circuits. Antenna-coupling to the detectors via planar transmission lines allows the detector dimensions to be much smaller than a wavelength, so the technique can be extended across the entire microwave, millimeter, and submillimeter wavelength ranges. The circuits are fabricated using standard microlithographic techniques and are compatible with uniform, large array formats. Unlike traditional monolithic bolometers that make use of micromachined structures, the THM employs the decoupling between electrons and phonons at millikelvin temperatures to provide thermal isolation. There is no fragile membrane in the structure for thermal isolation, which improves the fabrication yield.
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A study has been done of microwave mixing at 20 GHz using the nonlinear (power dependent) resistance of thin niobium strips in the resistive state. Our experiments give evidence that electron-heating is the main cause of the nonlinear phenomenon. Also a detailed phenomenological theory for the determination of conversion properties is presented. This theory is capable of predicting the frequency-conversion loss rather accurately for arbitrary bias by examining the I-V-characteristic. Knowing the electron temperature relaxation time, and using parameters derived from the I-V-characteristic also allows us to predict the -3 dB IF bandwidth. Experimental results are in excellent agreement with the theoretical predictions. The requirements on the mode of operation and on the film parameters for minimizing the conversion loss (and even achieving conversion gain) are discussed in some detail. Our measurements demonstrate an intrinsic conversion loss as low as 1 dB. The maximum IF frequency defined for -3 dB drop in conversion gain, is about 80 MHz. Noise measurements indicate a device output noise temperature of about 50 K and SSB mixer noise temperature below 250 K. This type of mixer is considered very promising for use in low-noise heterodyne receivers at THz frequencies.
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