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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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NASA NTRS2010

Producing Hydrogen by Plasma Pyrolysis of Methane

Plasma pyrolysis of methane has been investigated for utility as a process for producing hydrogen. This process was conceived as a means of recovering hydrogen from methane produced as a byproduct of operation of a life-support system aboard a spacecraft. On Earth, this process, when fully developed, could be a means of producing hydrogen (for use as a fuel) from methane in natural gas. The most closely related prior competing process - catalytic pyrolysis of methane - has several disadvantages: a) The reactor used in the process is highly susceptible to fouling and deactivation of the catalyst by carbon deposits, necessitating frequent regeneration or replacement of the catalyst. b) The reactor is highly susceptible to plugging by deposition of carbon within fixed beds, with consequent channeling of flow, high pressure drops, and severe limitations on mass transfer, all contributing to reductions in reactor efficiency. c) Reaction rates are intrinsically low. d) The energy demand of the process is high.

Atwater, James↗
NASA NTRS1995

Hydrogen Passivation of N(+)P and P(+)N Heteroepitaxial InP Solar Cell Structures

Dislocations and related point defect complexes caused by lattice mismatch currently limit the performance of heteroepitaxial InP cells by introducing shunting paths across the active junction and by the formation of deep traps within the base region. We have previously demonstrated that plasma hydrogenation is an effective and stable means to passivate the electrical activity of such defects in specially designed heteroepitaxial InP test structures to probe hydrogen passivation at typical base depths within a cell structure. In this work, we present our results on the hydrogen passivation of actual heteroepitaxial n(+)p and p(+)n InP cell structures grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD). We have found that a 2 hour exposure to a 13.56 MHz hydrogen plasma at 275 C reduces the deep level concentration in the base regions of both n(+)p and p(+)n heteroepitaxial InP cell structures from as-grown values of 5 - 7 x 10(exp 14)/cc, down to 3 - 5 x 10(exp 12)/cc. All dopants were successfully reactivated by a 400 C, 5 minute anneal With no detectable activation of deep levels. I-V analysis indicated a subsequent approx. 100 fold decrease In reverse leakage current at -1 volt reverse bias, and an improved built in voltage for the p(+)n structures. ln addition to being passivated,dislocations are also shown to participate in secondary interactions during hydrogenation. We find that the presence of dislocations enhances hydrogen diffusion into the cell structure, and lowers the apparent dissociation energy of Zn-H complexes from 1.19 eV for homoepitaxial Zn-doped InP to 1.12 eV for heteroepitaxial Zn-doped InP. This is explained by additional hydrogen trapping at dislocations subsequent to the reactivation of Zn dopants after hydrogenation.

Chatterjee, B.↗
NASA NTRS1996

Hydrogen passivation of N(+)-P and P(+)-N heteroepitaxial InP solar cell structures

Dislocations and related point defect complexes caused by lattice mismatch currently limit the performance of heteroepitaxial InP cells by introducing shunting paths across the active junction and by the formation of deep traps within the base region. We have previously demonstrated that plasma hydrogenation is an effective and stable means to passivate the electrical activity of such defects in specially designed heteroepitaxial InP test structures to probe hydrogen passivation at typical base depths within a cell structure. In this work, we present our results on the hydrogen passivation of actual heteroepitaxial n-p and p-n InP cell structures grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD). We have found that a 2 hour exposure to a 13.56 MHz hydrogen plasma at 275 C reduces the deep level concentration in the base regions of both n(+)-p and p(+)-n heteroepitaxial InP cell structures from as-grown values of 5-7 x 10(exp 14) cm(exp -3), down to 3-5 x 10(exp 12) cm(exp -3). All dopants were successfully reactivated by a 400 C, 5 minute anneal with no detectable activation of deep levels. One to five analysis indicated a subsequent approximately 100 fold decrease in reverse leakage current at -1 volt reverse bias, and an improved built in voltage for the p(+)-n structures. In addition to being passivated, dislocations are also shown to participate in secondary interactions during hydrogenation. We find that the presence of dislocations enhances hydrogen diffusion into the cell structure, and lowers the apparent dissociation energy of Zn-H complexes from 1.19 eV for homoepitaxial Zn-doped InP to 1.12 eV for heteroepitaxial Zn-doped InP. This is explained by additional hydrogen trapping at dislocations subsequent to the reactivation of Zn dopants after hydrogenation.

Chatterjee, Basab↗
NASA NTRS1995

Hydrogen passivation of n+p and p+n heteroepitaxial InP solar cell structures

High-efficiency, heteroepitaxial (HE) InP solar cells, grown on GaAs, Si or Ge substrates, are desirable for their mechanically strong, light-weight and radiation-hard properties. However, dislocations, caused by lattice mismatch, currently limit the performance of the HE cells. This occurs through shunting paths across the active photovoltaic junction and by the formation of deep levels. In previous work we have demonstrated that plasma hydrogenation is an effective and stable means to passivate the electrical activity of dislocations in specially designed HE InP test structures. In this work, we present the first report of successful hydrogen passivation in actual InP cell structures grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD). We have found that a 2 hour exposure to a 13.56 MHz hydrogen plasma at 275 C reduces the deep level concentration in HE n+n InP cell structures from as-grown values of approximately 10(exp 15)/cm(exp -3), down to 1-2 x 10(exp 13)/cm(exp -3). The deep levels in the p-type base region of the cell structure match those of our earlier p-type test structures, which were attributed to dislocations or related point defect complexes. All dopants were successfully reactivated by a 400 C, 5 minute anneal with no detectable activation of deep levels. I-V analysis indicated a subsequent approximately 10 fold decrease in reverse leakage current at -1 volt reverse bias, and no change in the forward biased series resistance of the cell structure which indicates complete reactivation of the n+ emitter. Furthermore, electrochemical C-V profiling indicates greatly enhanced passivation depth, and hence hydrogen diffusion, for heteroepitaxial structures when compared with identically processed homoepitaxial n+p InP structures. An analysis of hydrogen diffusion in dislocated InP will be discussed, along with comparisons of passivation effectiveness for n+p versus p+n heteroepitaxial cell configurations. Preliminary hydrogen-passivated HE InP cell results will also be presented.

Chatterjee, B.↗
NASA NTRS1976

Parametric dependence of ion temperature and relative density in the NASA Lewis SUMMA facility

Further hot-ion plasma experiments were conducted in the SUMMA superconducting magnetic mirror facility. A steady-state ExB plasma was formed by applying a strong radially inward dc electric field between cylindrical anodes and hollow cathodes located near the magnetic mirror maxima. Extending the use of water cooling to the hollow cathodes, in addition to the anodes, resulted in higher maximum power input to the plasma. Steady-state hydrogen plasmas with ion kinetic temperatures as high as 830 eV were produced. Functional relations were obtained empirically among the plasma current, voltage, magnetic flux density, ion temperature, and relative ion density. The functional relations were deduced by use of a multiple correlation analysis. Data were obtained for midplane magnetic fields from 0.5 to 3.37 tesla and input power up to 45 kW. Also, initial absolute electron density measurements are reported from a 90 deg Thomson scattering laser system.

Snyder, A.↗
NASA NTRS1976

Parametric dependence of ion temperature and relative density in the NASA Lewis SUMMA facility

Further hot-ion plasma experiments were conducted in the SUMMA superconducting magnetic mirror facility. A steady-state plasma with mutually perpendicular magnetic and electric fields was formed by applying a strong radially inward dc electric field between cylindrical anodes and hollow cathodes located near the magnetic mirror maxima. Extending the use of water cooling to the hollow cathodes, in addition to the anodes, resulted in higher maximum power input to the plasma. Steady-state hydrogen plasmas with ion kinetic temperatures as high as 830 eV were produced. Functional relations were obtained empirically among the plasma current, voltage, magnetic flux density, ion temperature, and relative ion density. The functional relations were deduced by use of a multiple correlation analysis. Data were obtained for midplane magnetic fields from 0.5 to 3.37 tesla and input power up to 45 kW. Also, initial absolute electron density measurements are reported from a 90 deg Thomson scattering laser system.

Snyder, A.↗
NASA NTRS1985

Measurements of energy distribution and wall temperature in flowing hydrogen microwave plasma systems

An electrothermal propulsion concept utilizing a microwave plasma system as the mechanism to convert electromagnetic energy into translational energy of the flowing gas is being investigated. A calorimetric experimental system has been designed and built enclosing the microwave plasma system to accurately determine the net energy transferred to the flowing gas. For a flow rate of 8900 micromoles/sec, a pressure of 7.4 torr, and an absorbed power level of 80 W, an energy transfer efficiency of 50 percent has been measured. A heat transfer model that characterizes the energy transfer processes in the plasma is developed. A wall temperature for the plasma system is calculated.

Chapman, R.↗
NASA NTRS1990

Fast magnetization of a high-to-low-beta plasma beam

The magnetization of a high-beta (plasma energy density/magnetic-field energy density) hydrogen-plasma beam injected into a vacuum transverse magnetic field is studied experimentally. Nominal parameters were Ti = 1 eV, Te = 5 eV, n = 3 x 10 to the 13th/cu cm or less, v(i) = 7 x 10 to the 6th cm/sec or less, t(pulse) less than 70 microsec, and Bz = 300 G or less. Plasma characteristics were measured for a wide beam and a downstream distance, x = 300 rho(i) or less, where x is the downstream distance and rho(i) is the ion gyroradius. A brief initial state of diamagnetic propagation is observed, followed by magnetized propagation accompanied by beam compression transverse to B with as much as a factor of 4 increase in density and a slight drift of the beam in the ion Lorentz force direction.

Song, J. J.↗
NASA NTRS1993

A nonequilibrium model for a moderate pressure hydrogen microwave discharge plasma

This document describes a simple nonequilibrium energy exchange and chemical reaction model to be used in a computational fluid dynamics calculation for a hydrogen plasma excited by microwaves. The model takes into account the exchange between the electrons and excited states of molecular and atomic hydrogen. Specifically, electron-translation, electron-vibration, translation-vibration, ionization, and dissociation are included. The model assumes three temperatures, translational/rotational, vibrational, and electron, each describing a Boltzmann distribution for its respective energy mode. The energy from the microwave source is coupled to the energy equation via a source term that depends on an effective electric field which must be calculated outside the present model. This electric field must be found by coupling the results of the fluid dynamics and kinetics solution with a solution to Maxwell's equations that includes the effects of the plasma permittivity. The solution to Maxwell's equations is not within the scope of this present paper.

Scott, Carl D.↗