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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Superconductor/Ferromagnet Heterostructures: A Platform for Superconducting Spintronics and Quantum Computation

The interplay between superconductivity and ferromagnetism in the superconductor/ferromagnet (SC/FM) heterostructures generates many interesting physical phenomena, including spin-triplet superconductivity, superconducting order parameter oscillation, and topological superconductivity. The unique physical properties make the SC/FM heterostructure as promising platforms for future superconducting spintronics and quantum computation applications. In this article, important research progress of SC/FM heterostructures from superconducting spintronics to quantum computation is reviewed, and it is organized as follows. First, the progress of spin current carriers in SC/FM heterostructures including Bogoliubov quasiparticles, superconducting vortex, and spin-triplet Cooper pairs which might be used for long-range spin transport is discussed. Then, the π Josephson junctions and their application for constructing π qubits are described. Finally, experimental signatures of Majorana states in the SC/FM heterostructures and the theoretically proposed manipulation are briefly reviewed, which could be useful to realize fault-tolerant topological quantum computing.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Photonics in Multimaterial Lateral Heterostructures Combining Group IV Chalcogenide van der Waals Semiconductors

Abstract Lateral heterostructures combining two multilayer group IV chalcogenide van der Waals semiconductors have attracted interest for optoelectronics, twistronics, and valleytronics, owing to their structural anisotropy, bulk‐like electronic properties, enhanced optical thickness, and vertical interfaces enabling in‐plane charge manipulation/separation, perpendicular to the trajectory of incident light. Group IV monochalcogenides support propagating photonic waveguide modes, but their interference gives rise to complex light emission patterns throughout the visible/near‐infrared range both in uniform flakes and single‐interface lateral heterostructures. Here, this work demonstrates the judicious integration of pure and alloyed monochalcogenide crystals into multimaterial heterostructures with unique photonic properties, notably the ability to select photonic modes with targeted discrete energies through geometric factors rather than band engineering. SnS‐GeS 1− x Se x ‐GeSe‐GeS 1− x Se x heterostructures with a GeS 1− x Se x active layer sandwiched laterally between GeSe and SnS, semiconductors with similar optical constants but smaller bandgaps, were designed and realized via sequential vapor transport synthesis. Raman spectroscopy, electron microscopy/diffraction, and energy‐dispersive X‐ray spectroscopy confirm a high crystal quality of the laterally stitched components with sharp interfaces. Nanometer‐scale cathodoluminescence spectroscopy provides evidence for a facile transfer of electron–hole pairs across the lateral interfaces and demonstrates the selection of photon emission at discrete energies in the laterally embedded active (GeS 1− x Se x ) part of the heterostructure.

2D layered crystals↗
DOE OSTI2023

Bicrystallography-informed Frenkel–Kontorova model for interlayer dislocations in strained 2D heterostructures

In recent years, van der Waals (vdW) heterostructures and homostructures, which consist of stacks of two-dimensional (2D) materials, have risen to prominence due to their association with exotic quantum phenomena originating from correlated electronic states harbored by them. Atomistic scale relaxation effects play an extremely important role in the electronic scale quantum physics of these systems, providing means of manipulation of these materials and allowing them to be tailored for emergent technologies. We investigate such structural relaxation effects in this work using atomistic and mesoscale models, within the context of twisted bilayer graphene — a well-known heterostructure system that features moiré patterns arising from the lattices of the two graphene layers. For small twist angles, atomic relaxation effects in this system are associated with the natural emergence of interface dislocations or strain solitons, which result from the cyclic nature of the generalized stacking fault energy (GSFE), that measures the interface energy based on the relative movement of the two layers. Here, in this work, we first demonstrate using atomistic simulations that atomic reconstruction in bilayer graphene under a large twist also results from interface dislocations, although the Burgers vectors of such dislocations are considerably smaller than those observed in small-twist systems. To reveal the translational invariance of the heterointerface responsible for the formation of such dislocations, we derive the translational symmetry of the GSFE of a 2D heterostructure using the notions of coincident site lattices (CSLs) and displacement shift complete lattices (DSCLs). The workhorse for this exercise is a recently developed Smith normal form bicrystallography framework. Next, we construct a bicrystallography-informed and frame-invariant Frenkel–Kontorova model, which can predict the formation of strain solitons in arbitrary 2D heterostructures, and apply it to study a heterostrained, large-twist bilayer graphene system. Our mesoscale model is found to produce results consistent with atomistic simulations. We anticipate that the model will be invaluable in predicting structural relaxation and for providing insights into various heterostructure systems, especially in cases where the fundamental unit cell is large and therefore, atomistic simulations are computationally expensive.

2D heterostructures↗
DOE OSTI2021

Twist-Angle-Dependent Ultrafast Charge Transfer in MoS 2 -Graphene van der Waals Heterostructures

Vertically stacked transition metal dichalcogenide-graphene heterostructures provide a platform for novel optoelectronic applications with high photoresponse speeds. Photoinduced nonequilibrium carrier and lattice dynamics in such heterostructures underlie these applications but have not been understood. In particular, the dependence of these photoresponses on the twist angle, a key tuning parameter, remains elusive. Here, using ultrafast electron diffraction, we report the simultaneous visualization of charge transfer and electron–phonon coupling in MoS 2 -graphene heterostructures with different stacking configurations. We find that the charge transfer timescale from MoS 2 to graphene varies strongly with twist angle, becoming faster for smaller twist angles, and show that the relaxation timescale is significantly shorter in a heterostructure as compared to a monolayer. These findings illustrate that twist angle constitutes an additional tuning knob for interlayer charge transfer in heterobilayers and deepen our understanding of fundamental photophysical processes in heterostructures, of importance for future applications in optoelectronics and light harvesting.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2024

One-Pot Self-Assembly of Sequence-Controlled Mesoporous Heterostructures via Structure-Directing Agents

Multimaterial heterostructures have led to characteristics surpassing the individual components. Nature controls the architecture and placement of multiple materials through biomineralization of nanoparticles (NPs); however, synthetic heterostructure formation remains limited and generally departs from the elegance of self-assembly. Here, in this study, a class of block polymer structure-directing agents (SDAs) are developed containing repeat units capable of persistent (covalent) NP interactions that enable the direct fabrication of nanoscale porous heterostructures, where a single material is localized at the pore surface as a continuous layer. This SDA binding motif (design rule 1) enables sequence-controlled heterostructures, where the composition profile and interfaces correspond to the synthetic addition order. This approach is generalized with 5 material sequences using an SDA with only persistent SDA-NP interactions (“P-NP 1 –NP 2 ”; NP i = TiO 2 , Nb 2 O 5 , ZrO 2 ). Expanding these polymer SDA design guidelines, it is shown that the combination of both persistent and dynamic (noncovalent) SDA-NP interactions (“PD-NP 1 –NP 2 ”) improves the production of uniform interconnected porosity (design rule 2). The resulting competitive binding between two segments of the SDA (P- vs D-) requires additional time for the first NP type (NP 1 ) to reach and covalently attach to the SDA (design rule 3). The combination of these three design rules enables the direct self-assembly of heterostructures that localize a single material at the pore surface while preserving continuous porosity.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Directing Charge Carriers and Ferroelectric Domains at Lateral Interfaces in van der Waals Heterostructures

Emergent phenomena in traditional ferroelectrics are frequently observed at heterointerfaces. Accessing such functionalities in van der Waals ferroelectrics requires the formation of layered heterostructures, either vertically stacked (similar to oxide ferroelectrics) or laterally stitched (without equivalent in 3D-crystals). Here, we investigate lateral heterostructures of the ferroelectric van der Waals semiconductors SnSe and SnS. A two-step process produces ultrathin crystals comprising an SnSe core laterally joined to an SnS edge-band, as confirmed by Raman spectroscopy, transmission electron microscopy (TEM) imaging, and electron diffraction. TEM shows a moiré pattern across the SnSe core due to coverage by an ultrathin SnS layer. The ability of the lateral interface (IF) to direct excited carriers, probed by cathodoluminescence, shows electron transfer over 560 nm diffusion length from the SnS edge-band. Large, thin flakes supporting ferroelectricity allow investigating domains and domain wall interactions in uniform crystals and lateral heterostructures. Polarized optical microscopy of sub-20 nm flakes consistently shows ⟨110⟩ oriented stripe domains with mirror-twin domain walls. Heterostructures adopt two domain configurations, with domains either constrained to the SnSe core or propagating across the entire SnSe–SnS flakes. Furthermore, the combined results demonstrate multifunctional van der Waals heterostructures with high-quality IFs presenting extraordinary opportunities for manipulating carrier flows and ferroelectric domain patterns.

2D ferroelectrics↗
DOE OSTI2026

Defect-Limited Carrier Lifetime in Epitaxially Strained Germanium-On-Silicon Heterostructures

Epitaxially strained germanium-on-silicon (Ge-on-Si) heterostructures are central to next-generation photonic and electronic devices, yet their performance remains strongly constrained by defect-limited carrier lifetimes. In this work, we investigate the impact of defects on the carrier lifetime in relaxed Ge-on-Si and strained Ge-on-Si heterostructures. High-resolution X-ray diffraction quantifies the strain-state in Ge and reveals signatures of strain relaxation due to lattice mismatch. Cross-sectional and plan-view transmission electron microscopy analyses enable direct visualization of interfacial defects and quantification of threading dislocation densities (TDDs) within the Ge layer. However, the presence of a dense misfit dislocation network obscures the threading dislocation signatures, preventing reliable TDD determination by plan-view transmission electron microscopy in strained-Ge (..epsilon..-Ge). To assess the defect density in this case, etch-pit density measurements were performed, providing an alternative means of quantifying the TDDs in the ..epsilon..-Ge layer. Carrier lifetime measurements by microwave-reflection photoconductive decay reveal a clear relationship with TDDs ranging from 5 x 103 cm-2 to 2 x 1010 cm-2, confirming Shockley-Read-Hall recombination as the limiting mechanism at lower defect densities, with TDD-dominated recombination at higher defect densities. The Ge-on-Si relaxed heterostructure exhibited lifetimes much lower (~12 ns) than the lattice-matched Ge on gallium arsenide (GaAs) (~158 ns) heterostructure. Introducing controlled tensile strain reduces defect formation, suppresses strain-relaxation pathways, and leads to measurable improvements in minority carrier lifetime from 12 ns to 171 ns. These results establish a direct relation between defect suppression and carrier recombination dynamics in both relaxed Ge-on-Si grown directly on Si and strained Ge-on-Si heterostructures incorporating compound-semiconductor buffer layers, offering a materials-driven pathway for engineering Ge with improved carrier lifetime for photonic applications.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Moiré engineering in van der Waals heterostructures

Isolated atomic planes can be assembled into a multilayer van der Waals (vdW) heterostructure in a precisely chosen sequence. These heterostructures feature moiré patterns if the constituent 2D material layers are stacked in an incommensurable way, due to a lattice mismatch or twist. This design-by-stacking has opened up the promising area of moiré engineering, a term that can be understood in two different perspectives, namely, (i) structural—engineering a moiré pattern by introducing twist, relative strain, or defects that affect the commensurability of the layers and (ii) functional—exploiting a moiré pattern to find and tune resulting physical properties of a vdW heterostructure. The latter meaning, referring to the application of a moiré pattern, is seen in the literature in the specific context of the observation of correlated electronic states and unconventional superconductivity in twisted bilayer graphene. The former meaning, referring to the design of the moiré pattern itself, is present in the literature but less commonly discussed or less understood. The underlying link between these two perspectives lies in the deformation field of the moiré superlattice. In this Perspective, we describe a path from designing a moiré pattern to employing the moiré pattern to tune physical properties of a vdW heterostructure. We also discuss the concept of moiré engineering in the context of twistronics, strain engineering, and defect engineering in vdW heterostructures. Although twistronics is always associated with moiré superlattices, strain and defect engineering are often not. Here, in this work, we demonstrate how strain and defect engineering can be understood within the context of moiré engineering. Adopting this perspective, we note that moiré engineering creates a compelling opportunity to design and develop multiscale electronic devices.

2D materials↗
DOE OSTI2025

Nanodiffraction imaging of ionically driven phase separation in cobaltite heterostructures

Controlling the anionic stoichiometry and distribution of perovskite cobaltites presents a powerful method for tailoring the magnetic and electronic properties for magneto-ionic applications. Nevertheless, the influence of nanoscale morphology, including phase separation and defects in cobaltite heterostructures, remains largely unexplored. We used x-ray nanodiffraction to directly image the nanoscale topotactic phase transformation in La 1−x Sr x CoO 3 (LSCO) heterostructures capped with a reactive aluminum (Al) layer (i.e., oxygen “getter”) of varying thicknesses (0.5, 3, and 7 nm). Nanodiffraction images reveal the formation of highly elongated BM filaments extending over mesoscopic lengths (>67 μm), indicating a strong tendency toward oxygen vacancy ordering in both P and BM phases in all heterostructures. Local strain and strain gradient analysis shows a strong correlation between the depletion of the P phase and strain gradients. Our measurements suggest that elongation of the BM filaments is the predominant mechanism for topotactic transformation in LSCO/Al heterostructures, preferred over coarsening, branching, and fractal growth. Our study provides a detailed nanoscale analysis of ionically driven phase transitions in LSCO/Al heterostructures, which is crucial for tailoring the functional properties of cobaltites for magneto-ionic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Layer and material-type dependent photoresponse in Se 2 /WS 2 vertical heterostructures

Transition metal dichalcogenide (TMD) heterostructures are promising for a variety of applications in photovoltaics and photosensing. Successfully exploiting these heterostructures will require an understanding of their layer-dependent electronic structures. However, there is no experimental data demonstrating the layer-number dependence of photovoltaic effects (PVEs) in vertical TMD heterojunctions. Here, by combining scanning electrochemical cell microscopy (SECCM) with optical probes, we report the first layer-dependence of photocurrents in WSe 2 /WS 2 vertical heterostructures as well as in pristine WS 2 and WSe 2 layers. For WS 2 , we find that photocurrents increase with increasing layer thickness, whereas for WSe 2 the layer dependence is more complex and depends on both the layer number and applied bias (V b ). Further, we find that photocurrents in the WSe 2 /WS 2 heterostructures exhibit anomalous layer and material-type dependent behaviors. Our results advance the understanding of photoresponse in atomically thin WSe 2 /WS 2 heterostructures and pave the way to novel nanoelectronic and optoelectronic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Interfacial charge transfer and interaction in the MXene/TiO 2 heterostructures

Hybrid materials of MXenes [two-dimensional (2D) carbides and nitrides] and transition-metal oxides have shown great promise in electrical energy storage (EES) and 2D heterostructures have been proposed as the next-generation electrode materials to expand the limits of current technology. Here we use first principles density functional theory to investigate the interfacial structure, energetics, and electronic properties of the heterostructures of MXenes (Ti n+1 C n T 2 ; T = terminal groups) and anatase TiO 2 . We find that the greatest work-function differences are between OH-terminated MXene (1.6 eV) and anatase TiO 2 (101) (6.4 eV), resulting in the largest interfacial electron transfer (~0.9e/nm 2 across the interface) from MXene to the TiO 2 layer. This interface also has the strongest adhesion and is further strengthened by hydrogen bond formation. For O–, F–, or mixed O–/F– terminated Ti n+1 C n MXenes, electron transfer is minimal and interfacial adhesion is weak for their heterostructures with TiO 2 . The strong dependence of the interfacial properties of the MXene/TiO 2 heterostructures on the surface chemistry of the MXenes will be useful to tune the heterostructures for EES applications.

2-dimensinal systems↗
DOE OSTI2022

Highly Asymmetric Graphene Layer Doping and Band Structure Manipulation in Rare Earth–Graphene Heterostructure by Targeted Bonding of the Intercalated Gadolinium

Heterostructures consisting of vertically stacked two-dimensional (2D) materials have recently gained large attention due to their highly controllable electronic properties and resulting quantum phases. In contrast to the mechanically stacked multilayered systems, which offer exceptional control over a stacking sequence or interlayer twist angles, the epitaxially grown 2D materials express unprecedented quality and stability over wafer-scale lengths. However, controlling the growth conditions remains a major obstacle toward the formation of complex, epitaxial heterostructures with well-defined electronic properties. Here, we synthesized a trilayer graphene heterostructure on the SiC(0001) substrate with two specific interlayer locations occupied by gadolinium. We applied multitechnique methodology based on low-temperature scanning tunneling microscopy/spectroscopy (STM/S) and angle-resolved photoelectron spectroscopy (ARPES) to determine the intercalant’s locations in the complex, epitaxial graphene heterostructure. Our approach relies on very high quality and large, micrometer-scale homogeneity of the synthesized system. The experimentally determined electronic structure is dominated by the two topmost graphene layers. Overall, our spectroscopic results show quantitative agreement between global ARPES, local STM/S, and density functional theory predictions. The characterized electronic properties primarily reflect highly anisotropic doping levels between the two corresponding graphene layers, which significantly affect the band structure topology. Two pairs of hybridized massive Dirac bands from our initial synthesis–the bilayer graphene on the SiC(0001) substrate–are transformed upon Gd intercalation into two pairs of massless Dirac bands with a new hybridization region in between. Our results open perspectives in the realization of exotic 2D quantum materials via atomically precise synthesis of epitaxial, multilayered graphene–rare earth heterostructures.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

One-Step Synthesis and Operando Electrochemical Impedance Spectroscopic Characterization of Heterostructured MoP–Mo 2 N Electrocatalysts for Stable Hydrogen Evolution Reaction

Here this study presents a novel synthesis of self-standing MoP and Mo 2 N heterostructured electrocatalysts with enhanced stability and catalytic performance. Facilitated by the controlled phase and interfacial microstructure, the seamless structures of these catalysts minimize internal resistivity and prevent local corrosion, contributing to increased stability. The chemical synthesis proceeds with etching step to activate the surface, followed by phosphor-nitriding in a chemical vapor deposition chamber to produce MoP-Mo 2 N@Mo heterostructured electrocatalysts. X-ray diffraction analyses confirm the presence of MoP, Mo 2 N, and Mo phases in the electrocatalyst. Morphology studies using scanning electron microscopy characterizes the hierarchical growth of structures, indicating successful formation of the heterostructure. X-ray photoelectron spectroscopy (XPS) analyses of the as-synthesized and post-catalytic activity samples reveal the chemical shift in terms of binding energy (BE) of Mo 3d XPS peak, especially after catalytic activity. The XPS BE shifts attributed to changes in oxidation state, electron transfer, and surface reconstruction during catalysis. Electrochemical evaluation of the catalysts demonstrates the superior performance of the MoP-Mo 2 N@Mo heterostructured catalyst in hydrogen evolution reactions (HER), with lower overpotentials and enhanced Tafel slopes. Stability tests reveal changes in double layer capacitance over time, suggesting surface reconstruction and increased active surface area during catalysis. Operando electrochemical impedance spectroscopy (EIS) further elucidates the dynamic changes in resistance and charge transfer during HER. Overall, comprehensive understanding of the synthesis, characterization, and electrochemical behavior of the developed MoP-Mo 2 N@Mo heterostructured electrocatalyst as presented in this paper highlights their potential utilization in sustainable energy applications.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Heterostructured Lepidocrocite Titanate-Carbon Nanosheets for Electrochemical Applications

Lepidocrocite-type titanates that reversibly intercalate sodium ions at low potentials (~0.6 V vs Na/Na + ) are promising anode candidates for sodium-ion batteries. However, large amounts of carbon additives are often used to improve their electrical conductivity and overcome poor cycling performance in the electrode composites. To ameliorate electronic transport issues of lepidocrocite titanate (K 0.8 Ti 1.73 Li 0.27 O 4 , KTL) in sodium-ion batteries, we have designed and synthesized heterostructures of exfoliated lepidocrocite-type titanium oxide (LTO) nanosheets with alternating carbon layers via a solution-based self-assembly approach. Positively charged dopamine (Dopa) was used as the carbon precursor and intercalated between negatively charged exfoliated titania nanosheets through electrostatic interaction. Dopa-intercalated LTO was then annealed under argon to form conductive carbon layers between titania sheets. The carbon content in the heterostructures was controlled by modifying the self-assembly conditions (i.e., pH, stirring duration, and Dopa-to-LTO ratio). Electrodes were prepared using carbonized heterostructures (LTO-C) without adding more carbon to the composites and tested in sodium half-cell configurations. Further, higher capacities and improved capacity retention over 250 cycles and lower impedance were observed, as the carbon content of LTO-C heterostructures was increased from 0% (LTO nanosheets) to 30%. These results indicate that the self-assembly approach for 2D heterostructured electrode materials is a promising strategy to overcome electronic transport limitations of layered transition-metal oxides and improve their electrochemical performance for next-generation energy storage applications.

25 ENERGY STORAGE↗
DOE OSTI2021

Anion Exchange of Ruddlesden–Popper Lead Halide Perovskites Produces Stable Lateral Heterostructures

Heterostructures of three-dimensional (3D) halide perovskites are unstable because of facile anion interdiffusion at halide interfaces. Two-dimensional (2D) Ruddlesden–Popper halide perovskites (RPPs) show suppressed and anisotropic ion diffu-sion that could enable stable RPP heterostructures, yet the direct and general growth of lateral RPP heterostructures remains challenging. Here we show that halide miscibility in RPPs decreases with perovskite layer thickness (n), enabling the for-mation of sharp halide lateral heterostructures from n = 1 and 2 RP lead iodide microplates via anion exchange with hydro-gen bromide vapor. In contrast, RPPs with n = 3 form more diffuse lateral heterojunctions, more similar to those in 3D perov-skites. The anion exchange behaviors are further modulated by the spacer and A-site cations in the RPP structures. These new insights, and kinetic studies of the exchange reactions, enable the preparation of lateral heterostructures from various n = 2 RPPs that are more stable against anion interdiffusion and degradation for potential device applications.

Roy, Chris R.↗
DOE OSTI2023

Epitaxial growth of highly symmetrical branched noble metal-semiconductor heterostructures with efficient plasmon-induced hot-electron transfer

Epitaxial growth is one of the most commonly used strategies to precisely tailor heterostructures with well-defined compositions, morphologies, crystal phases, and interfaces for various applications. However, as epitaxial growth requires a small interfacial lattice mismatch between the components, it remains a challenge for the epitaxial synthesis of heterostructures constructed by materials with large lattice mismatch and/or different chemical bonding, especially the noble metal-semiconductor heterostructures. Here, we develop a noble metal-seeded epitaxial growth strategy to prepare highly symmetrical noble metal-semiconductor branched heterostructures with desired spatial configurations, i.e., twenty CdS (or CdSe) nanorods epitaxially grown on twenty exposed (111) facets of Ag icosahedral nanocrystal, albeit a large lattice mismatch (more than 40%). Importantly, a high quantum yield (QY) of plasmon-induced hot-electron transferred from Ag to CdS was observed in epitaxial Ag-CdS icosapods (18.1%). This work demonstrates that epitaxial growth can be achieved in heterostructures composed of materials with large lattice mismatches. The constructed epitaxial noble metal-semiconductor interfaces could be an ideal platform for investigating the role of interfaces in various physicochemical processes.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Enhanced valley splitting of WSe 2 in twisted van der Waals WSe 2 /CrI 3 heterostructures

Van der Waals (vdW) heterostructures composed of different two-dimensional (2D) materials offer an easily accessible way to combine properties of individual materials for applications. Owing to the discovery of a set of unanticipated physical phenomena, the twisted 2D vdW heterostructures have gained considerable attention recently. Here, we report enhanced valley splitting in twisted 2D vdW WSe 2 /CrI 3 heterostructures. In particular, the splitting can be 1200% (or 5.18 meV) of the value for a non-twisted heterostructure. According to the $k ∙ p$ model, this value is equivalent to a ~20T external magnetic field applied perpendicular to the 2D sheet. The thermodynamic stability of 2D vdW WSe 2 /CrI 3 heterostructures, on the other hand, depends linearly on the interlayer twisting angle.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Cavity electrodynamics of van der Waals heterostructures

Van der Waals heterostructures host many-body quantum phenomena that are tunable in situ using electrostatic gates. Their constituent two-dimensional materials and gates can naturally form plasmonic self-cavities, confining light in standing waves of current density due to finite-size effects. The plasmonic resonances of typical graphite gates fall in the gigahertz to terahertz range, corresponding to the same microelectronvolt to millielectronvolt energy scale as the phenomena in van der Waals heterostructures that they electrically control. This raises the possibility that the built-in cavity modes of graphite gates are relevant for shaping the low-energy physics of these heterostructures. However, probing these cavity-coupled electrodynamics is challenging as devices are notably smaller than the diffraction limit at the relevant wavelengths. Here we report on the intrinsic cavity conductivity of gate-tunable graphene heterostructures. As the carrier density is tuned, we observe coupling and spectral weight transfer between graphene and graphite plasmonic cavity modes in the ultrastrong coupling regime. We present an analytical model to describe the results and provide general principles for cavity design. Our findings show that intrinsic cavity effects are important for understanding the low-energy electrodynamics of van der Waals heterostructures and open a pathway for useful functionality through cavity control.

Electronic properties and materials↗