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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
NASA NTRS1989

The potential for high performance HgCdTe arrays at 4 microns

The potential of existing technology at Rockwell International in terms of the goals for astronomical detector arrays in the 3 to 5 micron interval is evaluated. Measurements have been obtained for a number of samples of HgCdTe diodes manufactured by Rockwell International. All the diodes reported on here had cutoff wavelengths at high temperatures of 4.6 to 4.7 microns. Although no confirming measurements were made, the cutoff wavelength is expected to move to 5 microns or beyond at the low temperatures of our tests. Diode sizes ranged from 20 to 150 microns. The test program yielded full diode curves and relative response at 3.4 microns for the sample diodes as a function of temperature. Dark currents are quoted below as the current passing through the diode with a back bias of 50 mV. The various diode types showed a wide range of behavior, both with regard to dark current and responsibility. The test results for one of the best diode types are illustrated. This detector has a size of 148 microns and a cutoff wavelength of 4.61 microns.

Rieke, G. H.↗
NASA NTRS1989

High resolution imaging of the Venus night side using a Rockwell 128x128 HgCdTe array

The University of Hawaii operates an infrared camera with a 128x128 HgCdTe detector array on loan from JPL's High Resolution Imaging Spectrometer (HIRIS) project. The characteristics of this camera system are discussed. The infrared camera was used to obtain images of the night side of Venus prior to and after inferior conjunction in 1988. The images confirm Allen and Crawford's (1984) discovery of bright features on the dark hemisphere of Venus visible in the H and K bands. Our images of these features are the best obtained to date. Researchers derive a pseudo rotation period of 6.5 days for these features and 1.74 microns brightness temperatures between 425 K and 480 K. The features are produced by nonuniform absorption in the middle cloud layer (47 to 57 Km altitude) of thermal radiation from the lower Venus atmosphere (20 to 30 Km altitude). A more detailed analysis of the data is in progress.

Hodapp, K.-W.↗
NASA NTRS1989

Short wavelength HgCdTe staring focal plane for low background astronomy applications

The design of a 128x128 staring short wave infrared (SWIR) HgCdTe focal plane incorporating charge integrating transimpedance input preamplifiers is presented. The preamplifiers improve device linearity and uniformity, and provide signal gain ahead of the miltiplexer and readout circuitry. Detector's with cutoff wavelength of 2.5 microns and operated at 80 K have demonstrated impedances in excess of 10(exp 16) ohms with 60 percent quantum efficiency. Focal plane performance using a smaller format device is presented which demonstrates the potential of this approach. Although the design is capable of achieving less than 30 rms electrons with todays technology, initial small format devices demonstrated a read noise of 100 rms electrons and were limited by the atypical high noise performance of the silicon process run. Luminescence from the active silicon circuitry in the multiplexer limits the minimum detector current to a few hundred electrons per second. Approaches to eliminate this excessive source of current is presented which should allow the focal plane to achieve detector background limited performance.

Hall, D.↗
NASA NTRS1989

Low noise HgCdTe 128 x 128 SWIR FPA for Hubble space telescope

Large area focal plane arrays of unprecedented performance were developed for use in Near Infrared Camera and Multi-Object Spectrometer (NICMOS), a proposed Hubble Space Telescope refurbishment instrument. These FPAs are 128x128-element, HgCdTe hybrid arrays with a cutoff wavelength of 2.5 microns. The multiplexer consists of a CMOS field effect transistor switch array with a typical mean readout noise of less than 30 electrons. The detectors typically have a mean dark current of less than 10 electrons/s at 77 K, with currents below 2 electrons measured at 60 K (both at 0.5 V reverse bias). The mean quantum efficiency is 40 to 60 percent at 77 K for 1.0 to 2.4 microns. Functional pixel yield is typically greater than 99 percent, and the power consumption is approximately 0.2 mW (during readout only).

Blessinger, Michael↗
NASA NTRS1988

A 256 by 256 HgCdTe hybrid focal plane for low-background earth resources and astronomy applications

This paper describes a 256 x 256 HgCdTe hybrid focal plane with a 0.9- to 2.6-micron spectral range. The silicon FET switch multiplexer (mux) is based on previous hybrid work with a 128 x 128 Reticon mux. The high-density device described has a 40-micron pixel pitch vs 60-micron pixel pitch for the 128 x 128 devices. A read noise of about 1,000 e(-) has been obtained on developmental hybrid structures, along with full well capacities of about 1 x 10 to the 6th e(-). Preliminary device characterization for the 256 x 256 device, along with the first low-background astronomy test results for the 128 x 128 devices, will be presented.

Bailey, Gary C.↗
NASA NTRS1990

MBE HgCdTe heterostructure detectors

HgCdTe has been the mainstay for medium (3 to 5 micron) and long (10 to 14 micron) wavelength infrared detectors in recent years. Conventional growth and processing techniques are continuing to improve the material. However, the additional ability to tailor composition and placement of doped layers on the tens of angstroms scale using molecular beam epitaxy (MBE) provides the opportunity for new device physics and concepts to be utilized. MBE-based device structures to be discussed here can be grouped into two categories: tailored conventional structures and quantum structures. The tailored conventional structures are improvements on familiar devices, but make use of the ability to create layers of varying composition, and thus band gap, at will. The heterostructure junction can be positioned independently of doping p-n junctions. This allows the small band gap region in which the absorption occurs to be separated from a larger band gap region in which the electric field is large and where unwanted tunneling can occur. Data from hybrid MBE/liquid phase epitaxy (LPE)/bulk structures are given. Quantum structures include the HgTe-CdTe superlattice, in which the band gap and transport can be controlled by alternating thin layers (tens of angstroms thick) of HgTe and CdTe. The superlattice has been shown to exhibit behavior which is non-alloy like, including very high hole mobilities, two-dimensional structure in the absorption coefficient, resonant tunneling, and anisotropic transport.

Schulman, Joel N.↗
NASA NTRS1990

Properties of insulator interfaces with p-HgCdTe

Heat treatment at 70 C of low carrier concentration p-type HgCdTe samples (p sub o = 8 x 10 exp 14/cm) generates an inverted surface layer. A two day anneal process below 95 C did not affect the Hall coefficient, whereas an almost complete recovery was obtained by annealing at 120 C. While bulk electron mobility, obtained from PEM data, remained high (about 9 x 10 exp 4 sq cm/V s at 77 K), surface mobility is lower by more than an order of magnitude. Surface recombination velocity indicates a continuous improvement with increased temperature, and the activation energy remains equal to the vacancies energy level. The proposed mechanism is that of positive changes in the sulfide migrating towards the interface and generating an image inversion layer.

Schacham, Samuel E.↗
NASA NTRS1992

HgCdTe photomixers for CO2 laser radar systems

The Santa Barbara Research Center has developed a variety of high speed HgCdTe photodetectors for use in CO2 laser radar systems. These detectors have outstanding performance and can be made available in production quantities. Many of them have been employed in a variety of systems applications over the past ten years. In this paper, we briefly describe the detector technology, summarize the state-of-the-art, and indicate some practical applications.

Bratt, Peter R.↗
NASA NTRS1992

A model for the trap-assisted tunneling mechanism in diffused n-p and implanted n(+)-p HgCdTe photodiodes

A theoretical model for the trap-assisted tunneling process in diffused n-on-p and implanted n(+)-on-p HgCdTe photodiodes is presented. The model describes the traps and the trap characteristics: concentration, energy level, and capture cross sections. We have observed that the above two types of diodes differ in the voltage dependence of the trap-assisted tunneling current and dynamic resistance. Our model takes this difference into account and offers an explanation of the phenomenon. The good fit between measured and calculated DC characteristics of the photodiodes (for medium and high reverse bias and for temperatures from 65 to 140 K) supports the validity of the model.

Rosenfeld, David↗
NASA NTRS1992

A model for the trap-assisted tunneling mechanism in diffused n-p and implanted n(+)-p HgCdTe photodiodes

This paper presents a theoretical model for the trap-assisted tunneling process in diffused n-on-p and implanted n(+)-on-p HgCdTe photodiodes. The model describes the connection between the leakage current associated with the traps and the trap characteristics: concentration, energy level, and capture cross sections. It is observed that the above two types of diodes differ the voltage dependence of the trap-assisted tunneling current and dynamic resistance. The model takes this difference into account and offers an explanation of the phenomenon. The good fit between measured and calculated dc characteristics of the photodiodes supports the validity of the model.

Rosenfeld, David↗
NASA NTRS1993

The quantum efficiency of HgCdTe photodiodes in relation to the direction of illumination and to their geometry

A theoretical study of the effect of the direction of the incident light on the quantum efficiency of homogeneous HgCdTe photodiodes suitable for sensing infrared radiation in the 8-12 microns atmospheric window is presented. The probability of an excess minority carrier to reach the junction is derived as a function of its distance from the edge of the depletion region. Accordingly, the quantum efficiency of photodiodes is presented for two geometries. In the first, the light is introduced directly to the area in which it is absorbed (opaque region), while in the second, the light passes through a transparent region before it reaches the opaque region. Finally, the performance of the two types of diodes is analyzed with the objective of finding the optimal width of the absorption area. The quantum efficiency depends strongly on the way in which the light is introduced. The structure in which the radiation is absorbed following its crossing the transparent region is associated with both higher quantum efficiency and homogeneity. In addition, for absorption region widths higher than a certain minimum, the quantum efficiency in this case is insensitive to the width of the absorption region.

Rosenfeld, D.↗
NASA NTRS1993

Comprehensive investigation of HgCdTe metalorganic chemical vapor deposition

The principal objective of this experimental and theoretical research program was to explore the possibility of depositing high quality epitaxial CdTe and HgCdTe at very low pressures through metalorganic chemical vapor deposition (MOCVD). We explored two important aspects of this potential process: (1) the interaction of molecular flow transport and deposition in an MOCVD reactor with a commercial configuration, and (2) the kinetics of metal alkyl source gas adsorption, decomposition and desorption from the growing film surface using ultra high vacuum surface science reaction techniques. To explore the transport-reaction issue, we have developed a reaction engineering analysis of a multiple wafer-in-tube ultrahigh vacuum chemical vapor deposition (UHV/CVD) reactor which allows an estimate of wafer or substrate throughput for a reactor of fixed geometry and a given deposition chemistry with specified film thickness uniformity constraints. The model employs a description of ballistic transport and reaction based on the pseudo-steady approximation to the Boltzmann equation in the limit of pure molecular flow. The model representation takes the form of an integral equation for the flux of each reactant or intermediate species to the wafer surfaces. Expressions for the reactive sticking coefficients (RSC) for each species must be incorporated in the term which represents reemission from a wafer surface. The interactions of MOCVD precursors with Si and CdTe were investigated using temperature programmed desorption (TPD) in ultra high vacuum combined with Auger electron spectroscopy (AES). These studies revealed that diethyltellurium (DETe) and dimethylcadmium (DMCd) adsorb weakly on clean Si(100) and desorb upon heating without decomposing. These precursors adsorb both weakly and strongly on CdTe(111)A, with DMCd exhibiting the stronger interaction with the surface than DETe.

Raupp, Gregory B.↗
NASA NTRS1997

Crystal Growth of Solid Solution HgCdTe Alloys

The growth of homogenous crystals of HgCdTe alloys is complicated by the large separation between their liquidus and solidus temperatures. Hg(1-x)Cd(x)Te is representative of several alloys which have electrical and optical properties that can be compositionally tuned for a number of applications. Limitations imposed by gravity during growth and results from growth under reduced conditions are described. The importance of residual accelerations was demonstrated by dramatic differences in compositional distribution observed for different attitudes of the space shuttle that resulted in different steady acceleration components.

Lehoczky, Sandor L.↗
NASA NTRS2003

Monte Carlo Treatment of Displacement Damage in Bandgap Engineered HgCdTe Detectors

The conclusion are: 1. Description of NIEL calculation for short, mid, and longwave HgCdTe material compositions. 2. Full recoil spectra details captured and analyzed Importance of variance in high Z materials. 3. Can be applied directly to calculate damage distributions in arrays. 4. Future work will provide comparisons of measured array damage with calculated NIEL and damage energy distributions. 5. Technique to assess the full recoil spectrum behavior is extendable to other materials.

Fodness, Bryan C.↗
NASA NTRS2008

(55)Fe X-ray Response of HgCdTe NIR Detector Arrays

Conversion gain is a fundamental parameter in detector characteristics that is used to measure many identifying detector properties, including read noise, dark current, and quantum efficiency (QE). Charge coupling effects, such as inter-pixel capacitance, attenuate photon shot noise and result in an overestimation of of conversion gain when implementing the photon transfer technique. The (55)Fe X-ray technique is a direct and simple method by which to measure the conversion gain by comparing the observed instrumental counts (ADU) to the known charge (e-) liberated by a single X-ray photon. Here we present the calibrated pair production energy for 1.7 micron HgCdTe infrared detectors.

Fox, Ori↗
NASA NTRS2010

Advances in HgCdTe APDs and LADAR Receivers

Raytheon is developing NIR sensor chip assemblies (SCAs) for scanning and staring 3D LADAR systems. High sensitivity is obtained by integrating high performance detectors with gain i.e. APDs with very low noise Readout Integrated Circuits. Unique aspects of these designs include: independent acquisition (non-gated) of pulse returns, multiple pulse returns with both time and intensity reported to enable full 3D reconstruction of the image. Recent breakthrough in device design has resulted in HgCdTe APDs operating at 300K with essentially no excess noise to gains in excess of 100, low NEP <1nW and GHz bandwidths and have demonstrated linear mode photon counting. SCAs utilizing these high performance APDs have been integrated and demonstrated excellent spatial and range resolution enabling detailed 3D imagery both at short range and long ranges. In this presentation we will review progress in high resolution scanning, staring and ultra-high sensitivity photon counting LADAR sensors.

Bailey, Steven↗
NASA NTRS2017

HgCdTe Avalanche Photodiode Detectors for Airborne and Spaceborne Lidar at Infrared Wavelengths

We report results from characterizing the HgCdTe avalanche photodiode (APD) sensorchip assemblies (SCA) developed for lidar at infrared wavelength using the high density vertically integrated photodiodes (HDVIP) technique. These devices demonstrated high quantum efficiency, typically greater than 90 between 0.8 micrometers and the cut-off wavelength, greater than 600 APD gain, near unity excess noise factor, 6-10 MHz electrical bandwidth and less than 0.5 fW/Hz(exp.1/2) noise equivalent power (NEP). The detectors provide linear analog output with a dynamic range of 2-3 orders of magnitude at a fixed APD gain without averaging, and over 5 orders of magnitude by adjusting the APD and preamplifier gain settings. They have been successfully used in airborne CO2 and CH4 integrated path differential absorption (IPDA) lidar as a precursor for space lidar applications.

Sun, Xiaoli↗