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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

Heterogeneous Integration of Flipped Oxide Heterostructure Membranes for Nanoelectronics

Freestanding complex oxide membranes enable the release and transfer of epitaxial films, offering new design freedoms for next‐generation electronics. While the LaAlO 3 /SrTiO 3 (LAO/STO) heterostructure exhibits remarkable tunable conductivity at its interface, the active interface remains buried beneath the substrate, limiting access to this functionality. Here, we demonstrate how the LAO/STO heterostructure, in membrane form, can be flipped and precisely positioned on silicon and other platforms using polymer‐free micromanipulation. The transferred membranes preserve atomically smooth surfaces, high crystallinity, and key electronic properties. Through the 44‐nm insulating STO layer, ultra‐low‐voltage electron‐beam lithography (ULV‐EBL) writes conductive nanostructures at the now‐accessible STO/LAO interface, offering the potential to function as programmable local gates that modulate charge carriers in the underlying silicon. The platform establishes a general strategy for integrating complex oxide heterostructures with semiconductors, quantum materials, and flexible substrates, enabling new architectures for reprogrammable nanoelectronic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Origin of Capacity Degradation of High-Voltage KVPO 4 F Cathode

Potassium vanadium fluorophosphate (KVPO 4 F) is one of the most promising cathode candidates for K-ion batteries because of its high specific capacity, voltage, and energy density. However, reducing its capacity fade remains an important challenge. This work leverages structure and electrochemical analysis to understand the capacity degradation mechanism of the KVPO 4 F cathode. Interestingly, no structural degradation of the KVPO4F cathode is detected after 200 cycles in the wide voltage window of 5.0-2.5 V (vs K/K + ). Instead, the capacity degradation is attributed to electrolyte decomposition at high voltage ( > 4.5 V vs K/K + ), which causes drying of the electrolyte and the formation of insulating layers on the cathode surface, significantly increasing the polarization. The properties of four KPF 6 - A nd carbonate-based K electrolytes are compared, and 0.7 M KPF 6 in ethylene carbonate/propylene carbonate exhibits the highest oxidation stability and results in the best cycling stability for the KVPO 4 cathode. These findings suggest that the key to improving the cycling stability of KVPO 4 F is to develop novel K electrolytes with even higher oxidation stability.

25 ENERGY STORAGE↗
DOE OSTI2025

Electro-Thermo-Mechanical (ETM) Study on Submarine Dynamic Power Cables (SDPC) for Offshore Wind Transmission

Understanding the failure mechanisms of submarine dynamic power cables (SDPC) is critical for innovative design to meet the 2035 cost reduction target of U.S. DOE Floating Offshore Wind Shot. This is important because the current design suffers a significant failure rate in the field. This project conducted a systematic electro-thermo-mechanical (ETM) experimental study on the power cores extracted from a 15kV power cable with three cores of copper conductor, ethylene propylene rubber (EPR) insulation, and continuously corrugated welded aluminum armor (CCWA). An ETM testing system was developed by integrating a high voltage (HV) amplifier, two ceramic heaters, and a rod-plate transverse compression setup into a mechanical testing machine. Increasing temperature from room temperature (RT, 22 degree C) to 90 degree C resulted in the 67% decrease in the failure mechanical load as defined by the dielectric breakdown. Under creep mechanical loading, the dielectric breakdown time was decreased by 70% for a given mechanical load when the specimen temperature increased from RT to 90oC. The failure strain in both monotonic and creep mechanical loading modes was related to the maximum mechanical load applied. Although the dielectric breakdown occurred in the ETM test, the post-test measurement revealed an impressive recovery of electric resistance. The failure analysis on cross section of tested specimens indicated a sizable gap across insulation layer near the area between copper conductor and loading rod, which apparently resulted from online dielectric failure and offline elastic recovery of components including conductor and insulation layer.

17 WIND ENERGY↗
DOE OSTI2020

EMP-Resilient Electric Grid Transformer Analysis

The response of a high - voltage (HV) transformer to fast rise time voltages, such as that from a electromagnetic pulse (EMP) can result in interruption of power distribution and possibly system failure. To help identify these potential occurrences, it is necessary to develop a transformer model that not only captures the input/output response of the transformer but also the internal behavior. The model constructed should cover the frequency band of interest while capturing the internal physical and electrical characteristics. This broad-band, high-fidelity model would enable the prediction of unwanted effects through simulation. A proposed modeling scheme for a HV transformer is described in Part 1 of this report. Part 2 of this report details assessments of internal voltage and electrical field holdoff testing of transformer insulation dielectric breakdown, including comparison of low frequency (DC/60 Hz) holdoff to rise times characteristic of lightning (1 s) and EMP E1 transients (10 - 30 ns). This initial project is a path toward establishing electrical grid transformer failure criteria for EMP voltage transients. We developed modeling methods and measured breakdown electrical field statistical distributions for direct current, 60 Hz, lightning and EMP characteristic voltage rise times. Methods of nanosecond-scale capacitive discharge unit high voltage source development, suggestions for derating of 60 Hz insulation maximum electrical fields for EMP nanosecond pulse voltage withstand rating, and potential methods for increasing transformer resilience to such fast rise time pulses are described.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2025

Charge Regulation Stabilizes the Formation of Ionic Liquid‐Based Amphiphilic Oligomer Droplet Interface Bilayers

Amphiphilic charged oligomers (oligodimethylsiloxane – methylimidazolium cation, ODMS-MIM (+) ), assemble into bilayers using the droplet interface bilayer (DIB) platform, possess similar size and functionality as phospholipid bilayers, but exhibit increased stability. The oligomer ionic headgroups (MIM (+) ) are covalently bound to monodisperse, short-chain (n = 13) hydrophobic tails (ODMS). These self-assemble as monolayer brushes at the oil–aqueous interface of water droplets that are influenced by both the charged cationic headgroups, and the nature of the covalently attached tails in the organic phase. Charge regulation (CR) stabilizes the formation of ordered, molecularly close-packed brush phases, which results in highly insulating, stable DIB membranes, with contributions from specific ion-pairing effects, Debye screening, and voltage-dependent electrocompressive stresses. In the oil phase, interactions between hexadecane, a good solvent for ODMS, and the hydrophobic tails result in extended waiting times for bilayer formation compared to phospholipid DIBs, for which hexadecane is a poor solvent. Close agreement between experimental values and predictions for two key parameters, the critical membrane thickness, h c , and maximal grafted headgroup density, Γ 0 , validate an electrostatic CR model consisting of adsorption and partial neutralization of counterions at a charged interface.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Mitigation of Dielectric Heating of Piezoelectric Actuators at Cryogenic Temperatures

The new generation of low beam intensity superconducting linacs will require high accelerating gradients for new scientific discoveries. The high accelerating gradient cavities in pulsed SRF linacs will experience large (~1000’s of Hz) detuning caused by Lorentz force detuning (LFD). The piezo actuators that will be used to compensate large LFD must operate at a nominal voltage of 120V to 150V to deliver the required stroke to the cavity. In this high voltage range, the piezo is expected to warm up drastically due to its location in an insulating vacuum environment. Overheating of the piezo will significantly decrease the longevity of the actuator. A collaboration between FNAL and Physik Instrumente (PI) developed a novel piezo actuator design that mitigates piezo overheating. The design consists of using a metal foam in contact with the piezoelectric ceramic stack for heat removal. The second solution used lithium niobite as an alternative material. A comparison of the temperature stability will be presented and discussed. This study characterizes the dielectric properties for both materials. The results obtained are in the temperature range of 10 K to 300 K.

43 PARTICLE ACCELERATORS↗
DOE OSTI2020

High Dynamic Voltage Range Studies of Piezoelectric Multilayer Actuators at Low Temperatures

Piezo actuators are used for resonance control in superconducting linacs. In high accelerating gradients linacs, such as those operated in a pulsed mode, the piezos require a large operating voltage. This is due to the Lorentz forced detuning which causes a large frequency shift and is compensated with an active piezo-tuning system. In this high dynamic voltage range the piezo is expected to warm up drastically due to it being in an insulated vacuum. This study characterizes the dielectric properties (capacitance, dielectric losses), the piezo stroke (from geophone), and thermal properties such as heating. Results obtained in the temperature range of 20K to 300K will be presented and discussed.

43 PARTICLE ACCELERATORS↗
DOE OSTI2025

Determining the Minimum Phase‐to‐Phase Gap Distance for Unconventional Transmission Lines Using Numerical Method

With the increasing demand for power transmission, compact, high surge impedance loading (HSIL) high-voltage transmission lines have emerged as a viable solution due to their reduced land acquisition costs and higher power delivery capability. The compactness of a transmission line depends on effective insulation coordination, particularly in determining the phase-to-phase clearance, which is governed by the critical flashover voltage under switching and lightning overvoltage conditions. Traditional methods for phase-to-phase clearance rely on empirical formulas derived from experimental data, which are convenient for conventional high-voltage lines. However, unconventional HSIL lines require a faster and more adaptable evaluation method, as they involve optimized conductor positioning to reduce right-of-way requirements while enhancing natural power loadability. This study presents a simplified numerical approach to determine the minimum phase-to-phase gap, utilizing arc propagation viability curves, and offers an efficient alternative to conventional empirical methods. The proposed method was successfully applied to a 500 kV conventional line as well as 500 and 735 kV unconventional line designs, demonstrating its capability in accurately assessing insulation requirements. Results reveal that the method can support reduced gap clearances while still maintaining reliability, thereby validating its usefulness in optimizing compact transmission line configurations.

Arafat, Easir [The University of Texas at Dallas, ↗
DOE OSTI2020

Enabling Stable High‐Voltage LiCoO 2 Operation by Using Synergetic Interfacial Modification Strategy

Abstract Structural and interfacial instability of the LiCoO 2 cathode under a voltage exceeding 4.5 V (vs Li/Li + ) severely hinders its practical applications for high‐energy‐density lithium batteries. Herein, a modified electrolyte with nitriles (suberonitrile or 1,3,6‐hexanetricarbonitrile) and fluoroethylene carbonate (FEC) coadditives is demonstrated to form an ultrathin and uniform interface layer on LiCoO 2 cathode under a synergetic effect. As such, LiCoO 2 /Li cells display excellent cyclability at a cutoff voltage of 4.6 V with a capacity retention over 72% after 300 cycles and 60% after 200 cycles at 30 and 55 °C, respectively, even achieving operation at a high current rate (10 C) upon 500 cycles as compared to the controls with fast‐falling capacity to zero. Furthermore, an adsorption‐coordination mechanism between nitriles and cobalt and synergetic effect of coadditives are explored by the alliance of spectroscopic analysis and theoretical calculations. The contributed lone‐pairs on the N 2p orbital of nitriles in coordination lowers the real oxidation state of Co 3+/4+ so that it decreases its catalysis on electrolytes, and the synergy from nitrile‐derived species regulates FEC to form an LiF‐containing electron‐insulated interface layer. This work shares a new insight to nitriles with the synergy of coadditives and paves a way to refine (ultra)high‐voltage LiCoO 2 cathode for high‐energy‐density energy storages.

Yang, Xuerui↗
DOE OSTI2023

Magnetoresistance anomaly during the electrical triggering of a metal-insulator transition

Phase separation naturally occurs in a variety of magnetic materials and it often has a major impact on both electric and magnetotransport properties. In resistive switching systems, phase separation can be created on demand by inducing local switching, which provides an opportunity to tune the electronic and magnetic state of the device by applying voltage. Here we explore the magnetotransport properties in the ferromagnetic oxide La 0.7 ⁢Sr 0.3 ⁢MnO 3 (LSMO) during the electrical triggering of an intrinsic metal-insulator transition (MIT), which produces volatile resistive switching. This switching occurs in a characteristic spatial pattern, i.e., the formation of a high-resistance barrier perpendicular to the current flow, enabling an electrically actuated ferromagnetic-paramagnetic-ferromagnetic phase separation. At the threshold voltage of the MIT triggering, both anisotropic and colossal magnetoresistances exhibit anomalies including a large increase in magnitude and a sign flip. Computational analysis revealed that these anomalies originate from the coupling between the switching-induced phase separation state and the intrinsic magnetoresistance of LSMO. Furthermore, this work demonstrates that driving the MIT material into an out-of-equilibrium resistive switching state provides the means for electrical control of the magnetotransport phenomena.

Complex oxides↗
DOE OSTI2022

A 500 KV INVERTED GEOEMTRY FEEDTHROUGH FOR A HIGH VOLT-AGE DC ELECTRON GUN

The Continuous Electron Beam Accelerator Facility injector at Jefferson Lab (JLab) utilizes an inverted-geometry ceramic insulator photogun operating at 130 kV direct current to generate spin-polarized electron beams for high-energy nuclear physics experiments. A second photogun delivers 180 keV beam for commissioning a SRF booster in a testbed accelerator, and a larger version delivers 300 keV magnetized beam in a test stand beam line. This contribution reports on the development of an unprecedented inverted-insulator with cable connector for reliably applying 500 kV DC to a future polarized beam photogun, to be designed for operating at 350 kV without field emission. Such a photogun design could then be used for generating a polarized electron beam to drive a spin-polarized positron source as a demonstrator for high energy nuclear physics at JLab. There are no commercial cable connectors that fit the large inverted insulators required for that voltage range. Our proposed concept is based on a modified epoxy receptacle with intervening SF6 layer and a test electrode in a vacuum vessel.

Hernandez-Garcia, C.↗
DOE OSTI2022

A 500 KV INVERTED GEOEMTRY FEEDTHROUGH FOR A HIGH VOLT-AGE DC ELECTRON GUN

This contribution reports on the development of an unprecedented inverted-insulator with cable connector for reliably applying 500 kV dc to a future polarized beam photogun, to be designed for operating at 350kV without field emission. Such a photogun design could then be used for generating a polarized electron beam to drive a spin-polarized positron source as a demonstrator for high energy nuclear physics at JLab. There are no commercial cable connectors that fit the large inverted insulators required for that voltage range. Our proposed concept is based on a modified epoxy receptacle with intervening SF6 layer and a test electrode in a vacuum vessel.

Hernandez-Garcia, C.↗
DOE OSTI2023

Mutually magnetically insulated two-species Brillouin flow

In this work, we use the Brillouin flow analytic framework to examine the physics of Magnetically Insulated Transmission Lines (MITL). Here, we derive a model applicable to any particle species, including both positive and negative ions, in planar and cylindrical configurations. We then show how to self-consistently solve for two-species simultaneously, using magnetically insulated electrons and positive ions as an example. We require both layers to be spatially separated and magnetically insulated (mutually magnetically insulated); for a 7.5 cm gap with a 2 MV bias voltage, this condition requires magnetic fields in excess of 2.73 T. We see a close match between mutually insulated MITL performance and “superinsulated” (high degree of magnetic insulation) electron-only theory, as may be expected for these high magnetic fields. However, the presence of ions leads to several novel effects: (1) Opposite to electron-only theory, total electron currents increase rather than decrease as the degree of magnetic insulation becomes stronger. The common assumption of neglecting electrons for superinsulated MITL operation must be revisited when ions are present—we calculate up to 20× current enhancement. (2) The electron flow layer thickness increases up to double, due to ion space-charge enhancement. (3) The contributions from both ions and electrons to the MITL flow impedance are calculated. The flow impedance drops by over 50% when ions fill the gap, which can cause significant reflections at the load if not anticipated and degrade performance. Additional effects and results from the inclusion of the ion layer are discussed.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2022

Universal relation between doping content and normal-state resistance in gate voltage tuned ultrathin Bi 2 Sr 2 CaCu 2 O 8 + x flakes

We report gate voltage tunable ultra-thin high-T c cuprates supply a unique platform to investigate the electronic phase diagram and superconductor-insulator transition. One of the challenges in this field is the precise determination of the doping content in the underdoped non-superconducting region. Here we report the discovery of a universal relation between the doping content p and the normal-state resistance at a fixed temperature R(T f ), p = α + β ln[1/R(T f )], in the ultra-thin Bi 2 Sr 2 CaCu 2 O 8+x flakes. The in-depth analysis shows that the evolution of carrier scattering probability with doping content and the change of effective mass caused by superconductor-insulator transition are two key factors leading to this logarithmic relation. Based on our finding, the more precise electronic phase diagram can be established. In addition, the superconductor-insulator transition is verified to be a quantum phase transition using a finite size scaling analysis. The scaling exponent z v is found to have a close correlation with the disorder levels. The present result provides an important foundation to investigate the fascinating electronic states in the ultra-thin cuprates.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Low-Temperature 2D/2D Ohmic Contacts in WSe 2 Field-Effect Transistors as a Platform for the 2D Metal–Insulator Transition

in this work, we report the fabrication of hexagonal-boron-nitride (hBN) encapsulated multiterminal WSe 2 Hall bars with 2D/2D low-temperature Ohmic contacts as a platform for investigating the two-dimensional (2D) metal-insulator transition. We demonstrate that the WSe 2 devices exhibit Ohmic behavior down to 0.25 K and at low enough excitation voltages to avoid current-heating effects. Additionally, the high-quality hBN-encapsulated WSe 2 devices in ideal Hall-bar geometry enable us to accurately determine the carrier density. Measurements of the temperature (T) and density (n s ) dependence of the conductivity σ(T, n s ) demonstrate scaling behavior consistent with a metalinsulator quantum phase transition driven by electron-electron interactions, but where disorder-induced local magnetic moments are also present. Our findings pave the way for further studies of the fundamental quantum mechanical properties of 2D transition metal dichalcogenides using the same contact engineering.

2D materials↗
DOE OSTI2022

An optoelectronic heterostructure for neuromorphic computing: CdS/V 3 O 5

Nonvolatile resistive switching is one of the key phenomena for emerging applications in optoelectronics and neuromorphic computing. In most of the cases, an electric field is applied to a two terminal dielectric material device and leads to the formation of a low resistance filament due to ion migration. However, the stochastic nature of the ion migration can be an impediment for the device robustness and controllability, with uncontrolled variations of high and low resistance states or threshold voltages. Here, we report an optically induced resistive switching based on a CdS/V 3 O 5 heterostructure which can overcome this issue. V 3 O 5 is known to have a second order insulator to metal transition around T c ≈ 415 K, with an electrically induced threshold switching at room temperature. Upon illumination, the direct transfer of the photoinduced carriers from the CdS into V 3 O 5 produces a nonvolatile resistive switching at room temperature. The initial high resistance can be recovered by reaching the high temperature metallic phase, i.e., temperatures above T c . Interestingly, this resistive switching becomes volatile around the T c . In conclusion, by locally manipulating the volatile and nonvolatile resistive switching using electric field and light, this system is a promising platform for hardware based neuromorphic computing implementations.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2020

Percolation and nanosecond fluctuators in V 2 O 3 films within the metal–insulator transition

Vanadium sesquioxide (V 2 O 3 ) exhibits a metal–insulator transition (MIT) at 160 K between a low temperature, monoclinic, antiferromagnetic Mott insulator and a high temperature, rhombohedral, paramagnetic, metallic phase. In thin films, a percolative transition takes place over a finite temperature range of phase coexistence. We study the fluctuating dynamics of this percolative MIT by measuring voltage noise spectra at both low frequencies (up to 100 kHz) and radio frequencies (between 10 MHz and 1 GHz). Noise intensity quadratic in bias is observed in the MIT region, as expected for resistive fluctuations probed nonperturbatively by the current. The low frequency noise resembles flicker-type 1/f β noise, often taking on the form of Lorentzian noise dominated by a small number of fluctuators as the volume fraction of the insulating phase dominates. Radio frequency noise intensity also quadratic in the bias current allows the identification of resistance fluctuations with lifetimes below 1 ns, approaching timescales seen in non-equilibrium pump–probe studies of the transition. We find quantitative consistency with a model for fluctuations in the percolative fraction. The thermodynamics of the MIT suggests that dominant fluctuations are ones that alter small volumes affecting the connectivity of domain boundaries. This noise serves as a sensitive and nonperturbative probe for the dynamics of switching phenomena in this system.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Conductive Adhesives for Metallization of Interdigitated Back Contact Solar Cells

The metallization and interconnection of Si solar cells to form a module is usually a multi-step process: cells are metallized individually, soldered into strings, and subsequently assembled into a module. Furthermore, the metallization process for individual cells must be compatible with the doped surfaces being contacted, which creates additional challenges when moving from diffused junctions to heterojunctions and/or passivated contact structures. To mitigate these problems and streamline module manufacturing for the case of interdigitated back contact (IBC) cell modules, we developed an approach wherein unmetallized IBC cells are bonded directly to a circuitized backsheet using a conductive adhesive (CA) that only conducts out-of-plane. The metal/CA/silicon stack is bonded by hot-pressing at 100-200 degrees C.For a CA consisting of ethylene vinyl acetate (EVA) filled with Ag-coated spheres or indium powder we find that contact resistivities in the range of 1-10 Wcm 2 are obtained, regardless of which conductive filler and which hot pressing parameters are used. XPS revealed that about 1-2 nm EVA residue bonds to the Si in these samples, suggesting the formation of an insulating barrier that is responsible for the high contact resistance. Using indium powder alone, improved contact resistivities <0.6 Wcm 2 , high shunt resistances, and an implied open-circuit voltage loss below 10 mV were obtained. Furthermore, a cost estimate is presented, indicating that substantial cost savings of up to $10/m 2 , or about $0.05/W DC , are possible through CA-based IBC module manufacturing.

14 SOLAR ENERGY↗