SEARCH · Search NASA
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
The design of a high efficiency, long life terrestrial module was completed. It utilized 256 rectangular, high efficiency solar cells to achieve high packing density and electrical output. Tooling for the fabrication of solar cells was in house and evaluation of the cell performance was begun. Based on the power output analysis, the goal of a 13% efficiency module was achievable.
Two-terminal monolithic tandem cells consisting of a GaAs solar cell grown epitaxially on a Ge solar cell substrate are very attractive for space applications. Tandem cells of GaAs grown by metal-organic chemical vapor deposition on thin Ge were investigated to address both higher efficiency and reduced weight. Two materials growth issues associated with this heteroepitaxial system, autodoping of the GaAs layers by Ge and diffusion of Ga and As into the Ge substrate, were addressed. The latter appears to result in information of an unintentional p-n junction in the Ge. Early simulator measurements gave efficiencies as high as 21.7 percent for 4 cm2 GaAs/Ge cells, but recent high-altitude testing has given efficiencies of 18 percent. Sources of errors in simulator measurements of two-terminal tandem cells are discussed. A limiting efficiency of about 36 percent for the tandem cell at AMO was calculated. Ways to improve the performance of present cells, primarily by increasing the Isc and Voc of the Ge cell, are proposed.
Progress on research in high-efficiency silicon solar cells is presented. Topics addressed include: recombination measurement techniques, doped crystals, minority carrier transport, oxygen process in solar cells, solar cell models, loss mechanics in solar cells, high-efficiency metal insulators, dendritic web cells, and surface and bulk loss reduction by low-energy hydrogen doping.
Progress on the development of a high efficiency module is described. The effort includes development of high efficiency cells using crystalline silicon wafers from float zone silicon. Module-size cells, 53 sq cm in area, were fabricated with efficiency of 18%. Operating temperature reduction is also studied.
In recently years, Ga(0.5)In((0.5)P/GaAs cells have drawn increased attention both because of their high efficiencies and because they are well suited for space applications. They can be grown and processed as two-junction devices with roughly twice the voltage and half the current of GaAs cells. They have low temperature coefficients, and have good potential for radiation hardness. We have previously reported the effects of electron irradiation on test cells which were not optimally designed for space. From those results we estimated that an optimally designed cell could achieve 20 percent after irradiation with 10(exp 15) cm(exp -2) 1 MeV electrons. Modeling studies predicted that slightly higher efficiencies may be achievable. Record efficiencies for EOL performance of other types of cells are significantly lower. Even the best Si and InP cells have BOL efficiencies lower than the EOL efficiency we report here. Good GaAs cells have an EOL efficiency of 16 percent. The InP/Ga(0.5)In(0.5)As two-junction, two-terminal device has a BOL efficiency as high as 22.2 percent, but radiation results for these cells were limited. In this study we use the previous modeling and irradiation results to design a set of Ga(0.5)In(0.5)P/GaAs cells that will demonstrate the importance of the design parameters and result in high-efficiency devices. We report record AMO efficiencies: a BOL efficiency of 25.7 percent for a device optimized for BOL performance and two of different designs with EOL efficiencies of 19.6 percent (at 10(exp 15) cm(exp -2) 1MeV electrons). We vary the bottom-cell base doping and the top-cell thickness to show the effects of these two important design parameters. We get an unexpected result indicating that the dopant added to the bottom-cell base also increases the degradation of the top cell.
NASA’s High Efficiency Megawatt Motor (HEMM) is being developed to achieve the performance needed by single aisle class electrified aircraft. It is a 1.4 MW electric machine designed as a generator for NASA’s STARC-ABL concept vehicle. It has performance objectives of greater than 16 kW/kg electromagnetic specific power and efficiency of greater than 98%. A significant flaw in the preliminary electromagnetic design of HEMM was recently discovered. The stator teeth in the preliminary design cause the magnetic flux in the rotating components of HEMM to oscillate at a very high frequency (12,240 Hz). Two independent energy loss analyses are presented to show that the frequency is high enough to cause eddy current losses that significantly exceed the rotor’s loss limit (50 W), despite the very small magnitude of this flux oscillation (<0.01 T). To eliminate these rotor losses, while continuing to meet the target performance, it was determined that the stator teeth needed to be removed and the electromagnetic geometry of the motor needed to be revised. The revised, slotless HEMM motor design is summarized. Sensitivity of the new design to key unknown variables such as the temperature of and number of turns in the superconducting rotor coils and the stator winding’s average temperature.
Second generation high temperature superconducting coils provide a very attractive level of performance for use in the field winding of electric machines for aircraft. Aside from maintaining these coils at cryogenic temperatures, much care must be taken to prevent damaging these relatively fragile materials due to excessive stress. Thermal stresses due to temperature cycling and mechanical stresses due to centrifugal forces are the most critical for the High Efficiency Megawatt Motor. This paper summarizes two test campaigns that were undertaken to reduce the risks posed by these loads. In one campaign, several superconducting coils were fabricated, thermally cycled up to 50~times, and electrically tested in liquid nitrogen to assess the change in superconductivity metrics throughout thermal cycling. In the other campaign, a full-scale superconducting coil was fabricated, a test article was designed to produce a representative stress environment in the coil, the test article and coil were rotated at room temperature up to a speed of 11,800~rpm, and the superconductivity metrics were measured in liquid nitrogen before and after each rotation. The experimental results demonstrate that the superconducting coils manufactured in house can survive both thermal cycling and high speed rotation with no appreciable degradation in superconducting performance.
Highly efficient special sound absorbing structures with the following criteria are considered: (1) A distribution surface of the sound absorbing material greater than that of the building element on which the structure is placed; (2) The highest possible absorption coefficient in the widest possible frequency band; and (3) adaptability to different construction and aesthetic conditions.
High-efficiency p-Ga(1-x)Al(x)As, p-GaAs, n-GaAs solar cells are made by isothermally soaking n-GaAs substrates in an undersaturated Zn-doped Ga-Al-As melt. This one-step growth procedure produces a graded band gap p-Ga(1-x)Al(x)As layer 0.2-0.4 micron thick. Efficiencies of 18.5% AM0 and 21.9% AM1 have been measured.
This viewgraph presentation presents information on the attempt to produce high-order, efficient, central methods that scale well to high dimension. The central philosophy is that the equations should evolve to the point where the data is smooth. This is accomplished by a cyclic pattern of reconstruction, evolution, and re-projection. One dimensional and two dimensional representational methods are detailed, as well.
Programs aimed at developing large area, high efficiency GaAs heteroface cells for low concentration space applications and high concentration terrestrial applications as well as other programs aimed at developing high efficiency multicolor devices for use in similar applications are described. An additional program aimed at achieving improved power to weight ratio by parting thin film solar cells from their growth substrates prior to their incorporation into an array assembly is also described. There is potential for multiple reuse of the substrates which could lead to reduced costs for such devices. Highlights of these programs and their interrelated contributions toward the goals of reducing specific weight, volume and cost of photovoltaic space power systems are discussed. Overall goals are summarized and current programs and their funding sources are listed.
A 75 watt CW high efficiency helix TWT operating at 20 GHz was developed for satellite communication systems. The purpose was to extend the performance capabilities of helix TWTs by using recent technology developments. The TWT described is a unique design because high overall efficiency is obtained with a low perveance beam. In the past, low perveance designs resulted in low beam efficiencies. However, due to recent breakthoughs in diamond rod technology and in collector electrode materials, high efficiencies can now be achieved with low perveance beams. The advantage of a low perveance beam is a reduction in space charge within the beam which translates to more efficient collector operation. In addition, this design incorporates textured graphite electrodes which further enhance collector operation by suppressing backstreaming secondaries. The diamond supported helix circuit features low RF losses, high interaction impedance, good thermal handling capability and has been designed to compensate for the low perveance beam. One more discussed tube feature is the use of a velocity taper in the output helix that achieves low signal distortion while maintaining high efficiency.
An architecture for back-illuminated complementary metal oxide/semiconductor (CMOS) and charge-coupled-device (CCD) ultraviolet/visible/near infrared- light image sensors, and a method of fabrication to implement the architecture, are undergoing development. The architecture and method are expected to enable realization of the full potential of back-illuminated CMOS/CCD imagers to perform with high efficiency, high sensitivity, excellent angular response, and in-pixel signal processing. The architecture and method are compatible with next-generation CMOS dielectric-forming and metallization techniques, and the process flow of the method is compatible with process flows typical of the manufacture of very-large-scale integrated (VLSI) circuits. The architecture and method overcome all obstacles that have hitherto prevented high-yield, low-cost fabrication of back-illuminated CMOS/CCD imagers by use of standard VLSI fabrication tools and techniques. It is not possible to discuss the obstacles in detail within the space available for this article. Briefly, the obstacles are posed by the problems of generating light-absorbing layers having desired uniform and accurate thicknesses, passivation of surfaces, forming structures for efficient collection of charge carriers, and wafer-scale thinning (in contradistinction to diescale thinning). A basic element of the present architecture and method - the element that, more than any other, makes it possible to overcome the obstacles - is the use of an alternative starting material: Instead of starting with a conventional bulk-CMOS wafer that consists of a p-doped epitaxial silicon layer grown on a heavily-p-doped silicon substrate, one starts with a special silicon-on-insulator (SOI) wafer that consists of a thermal oxide buried between a lightly p- or n-doped, thick silicon layer and a device silicon layer of appropriate thickness and doping. The thick silicon layer is used as a handle: that is, as a mechanical support for the device silicon layer during micro-fabrication.
Recent advances in silicon solar cell processing have led to attainment of conversion efficiency approaching 20%. The basic cell design is investigated and features of greatest importance to achievement of 20% efficiency are indicated. Experiments to separately optimize high efficiency design features in test structures are discussed. The integration of these features in a high efficiency cell is examined. Ion implantation has been used to achieve optimal concentrations of emitter dopant and junction depth. The optimization reflects the trade-off between high sheet conductivity, necessary for high fill factor, and heavy doping effects, which must be minimized for high open circuit voltage. A second important aspect of the design experiments is the development of a passivation process to minimize front surface recombination velocity. The manner in which a thin SiO2 layer may be used for this purpose is indicated without increasing reflection losses, if the antireflection coating is properly designed. Details are presented of processing intended to reduce recombination at the contact/Si interface. Data on cell performance (including CZ and ribbon) and analysis of loss mechanisms are also presented.
The proceedings of the Third Solar Cell High Efficiency and Radiation Damage Meeting are outlined. The topics covered included high efficiency silicon solar cells, silicon solar cell radiation damage, GaAs solar cell performance, and 30 percent conversion devices. The study of radiation damage from a fundamental defect-centered basis is discussed and evaluated as a focus of future work. 18% AM0 efficiency and 0.7 V open-circuit voltages are designated as achievable goals for silicon solar cells, and the potential for 30% AM0 efficiencies from monolithic tandem cell designs without sunlight concentration is noted. In addition to its potential for 20% AM0 efficiencies, the GaAs cell offers the possibility of a radiation-insensitive power supply when operated at temperatures near 200 C.
High-efficiency Al(x)Ga(1-x)As/GaAs heteroface solar concentrator cells have been developed for both space and terrestrial applications. The cells, which were grown using metalorganic chemical vapor deposition, have been fabricated in both the p-n and n-p configurations. Magnesium and zinc are used as p-type dopants, and Se is used as the n-type dopant. The space cells, which are designed for use in a Cassegrainian concentrator operating at 100 suns, AMO, have a circular illuminated area 4 mm in diameter on a 5 mm x 5 mm cell. These cells have exhibited flash-tested efficiencies as high as 23.6 percent at 28 C and 21.6 percent at 80 C. The terrestrial cells have a circular illuminated area 0.2 inches in diameter and are intended for use in a module which operates at 940 suns, AM1.5. These cells have shown a peak efficiency of 26 percent at 753 suns and over 25 percent at greater than 1000 suns.
A Workshop on Crystal Growth for High-Efficiency Silicon Solar Cells was held December 3 and 4, 1984, in San Diego, California. The Workshop offered a day and a half of technical presentations and discussions and an afternoon session that involved a panel discussion and general discussion of areas of research that are necessary to the development of materials for high-efficiency solar cells. Topics included the theoretical and experimental aspects of growing high-quality silicon crystals, the effects of growth-process-related defects on photovoltaic devices, and the suitability of various growth technologies as cost-effective processes. Fifteen invited papers were presented, with a discussion period following each presentation. The meeting was organized by the Flat-Plate Solar Array Project of the Jet Propulsion Laboratory. These Proceedings are a record of the presentations and discussions, edited for clarity and continuity.
A useful measure of sensor performance is the transceiver system efficiency n (sub sys). Which consists of the antenna efficiency n (sub a) and optical and electronic losses. Typically, the lidar equation and the antenna efficiency are defined in terms of the telescope aperture area. However, during the assembly of a coherent transceiver, it is important to measure the system efficiency before the installation of the beamexpanding telescope (i.e., the untruncated-beam system efficiency). Therefore, to accommodate both truncated and untruncated beam efficiency measurements, we define the lidar equation and the antenna efficiency in terms of the beam area rather than the commonly used aperture area referenced definition. With a well-designed Gaussian-beam lidar, aperture area referenced system efficiencies of 15 to 20 % (23-31% relative to the beam area) are readily achievable. In this paper we compare the differences between these efficiency definitions. We then describe techniques by which high efficiency can be achieved, followed by a discussion several novel auto alignment techniques developed to maintain high efficiency.