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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
DOE OSTI2015

Effects of Applied Bias and High Field Stress on the Radiation Response of GaN/AlGaN HEMTs

The sensitivity of GaN/AlGaN HEMTs to 1.8 MeV proton irradiation is greatly enhanced by biasing the devices during irradiation and/or applying high field stress before irradiation. The resulting defect energy distributions are evaluated after irradiation and/or high field stress via low-frequency noise measurements. Significant increases are observed in acceptor densities for defects with ~ 0.2 and ~ 0.7 eV energy levels. These defects appear to dominate the degradation in threshold voltage and transconductance for these devices. Density functional theory (DFT) calculations show that N vacancy-related defects in GaN and hydrogenated O N complexes in AlGaN are strong candidates for the defects with ~ 0.2 eV energy levels in these devices. Finally, we also present evidence that the previously unidentified ~ 0.7 eV defect in GaN is a N anti-site defect (N Ga).

1/f noise↗
NASA NTRS1976

Irradiate-anneal screening of total dose effects in semiconductor devices

An extensive investigation of irradiate-anneal (IRAN) screening against total dose radiation effects was carried out as part of a program to harden the Mariner Jupiter/Saturn 1977 (MJS'77) spacecraft to survive the Jupiter radiation belts. The method consists of irradiating semiconductor devices with Cobalt-60 to a suitable total dose under representative bias conditions and of separating the parts in the undesired tail of the distribution from the bulk of the parts by means of a predetermined acceptance limit. The acceptable devices are then restored close to their preirradiation condition by annealing them at an elevated temperature. IRAN was used when lot screen methods were impracticable due to lack of time, and when members of a lot showed a diversity of radiation response. The feasibility of the technique was determined by testing of a number of types of linear bipolar integrated circuits, analog switches, n-channel JFETS and bipolar transistors. Based on the results of these experiments a number of device types were selected for IRAN of flight parts in the MJS'77 spacecraft systems. The part types, screening doses, acceptance criteria, number of parts tested and rejected as well as the program steps are detailed.

Stanley, A. G.↗
NASA NTRS2015

Test Standard Revision Update: JESD57, "Procedures for the Measurement of Single-Event Effects in Semiconductor Devices from Heavy-Ion Irradiation"

The JEDEC JESD57 test standard, Procedures for the Measurement of Single-Event Effects in Semiconductor Devices from Heavy-Ion Irradiation, is undergoing its first revision since 1996. In this talk, we place this test standard into context with other relevant radiation test standards to show its importance for single-event effect radiation testing for space applications. We show the range of industry, government, and end-user party involvement in the revision. Finally, we highlight some of the key changes being made and discuss the trade-space in which setting standards must be made to be both useful and broadly adopted.

heavy ion↗
DOE OSTI2022

Effect of proton irradiation temperature on persistent photoconductivity in zinc oxide metal-semiconductor-metal ultraviolet photodetectors

The electrical and structural characteristics of 50-nm-thick zinc oxide (ZnO) metal-semiconductor-metal ultraviolet (UV) photodetectors subjected to proton irradiation at different temperatures are reported and compared. The devices were irradiated with 200 keV protons to a fluence of 1016 cm−2. Examination of the x-ray diffraction (XRD) rocking curves indicates a preferred (100) orientation prior to irradiation, with decrease in crystal quality afterward. Additionally, peak shifts in XRD and Raman spectra of the control sample relative to well-known theoretical positions are indicative of tensile strain in the as-deposited ZnO films. Shifts toward theoretical unstrained positions are observed in the irradiated films, which indicates partial relaxation. Raman spectra also indicate increase in oxygen vacancies (VO) and zinc interstitial defects (Zni) compared to the control sample. Additionally, transient photocurrent measurements performed on each sample at different temperatures showed up to 2× increase in photocurrent decay time constants for irradiated samples vs the control. This persistent photoconductive behavior is linked to the activation of electron and hole traps near the surface, and to the desorption and reabsorption of O2 molecules on the ZnO surface under the influence of UV light. Using an Arrhenius model, trap activation energies were extracted and, by comparing with known energies from the literature, the dominant defects contributing to persistent photoconductivity for each irradiation condition were identified. The persistence of differences in photocurrent transients between different samples months after irradiation indicates that the defects introduced by the suppression of thermally activated dynamic annealing processes have a long-term deleterious effect on device performance.

Heuser, Thomas A. (ORCID:0000000225642400)↗
DOE OSTI2016

Top-gated field-effect LaAlO{sub 3}/SrTiO{sub 3} devices made by ion-irradiation

We present a method to fabricate top-gated field-effect devices in a LaAlO{sub 3}/SrTiO{sub 3} two-dimensional electron gas (2-DEG). Prior to the gate deposition, the realisation of micron size conducting channels in the 2-DEG is achieved by an ion-irradiation with high-energy oxygen ions. After identifying the ion fluence as the key parameter that determines the electrical transport properties of the channels, we demonstrate the field-effect operation. At low temperature, the normal state resistance and the superconducting T{sub c} can be tuned over a wide range by a top-gate voltage without any leakage. A superconductor-to-insulator quantum phase transition is observed for a strong depletion of the 2-DEG.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
NASA NTRS2013

Radiation Tests of Single Photon Avalanche Diode for Space Applications

Single photon avalanche diodes (SPADs) have been recently studied as photodetectors for applications in space missions. In this presentation we report the results of radiation hardness test on large area SPAD (actual results refer to SPADs having 500 micron diameter). Dark counts rate as low as few kHz at −10 degC has been obtained for the 500 micron devices, before irradiation. We performed bulk damage and total dose radiation tests with protons and gamma-rays in order to evaluate their radiation hardness properties and their suitability for application in a Low Earth Orbit (LEO) space mission. With this aim SPAD devices have been irradiated using up to 20 krad total dose with gamma-rays and 5 krad with protons. The test performed show that large area SPADs are very sensitive to proton doses as low as 2×10(exp 8) (1 MeV eq) n/cm2 with a significant increase in dark counts rate (DCR) as well as in the manifestation of the "random telegraph signal" effect. Annealing studies at room temperature (RT) and at 80 degC have been carried out, showing a high decrease of DCR after 24-48 h at RT. Lower protons doses in the range 1-10×10(exp 7) (1 MeV eq) n/cm(exp 2) result in a lower increase of DCR suggesting that the large-area SPADs tested in this study are well suitable for application in low-inclination LEO, particularly useful for gamma-ray astrophysics.

radiation hardness↗
DOE OSTI2017

A study of the effect of electron and proton irradiation on 4H-SiC device structures

The changes of the current–voltage characteristics and the uncompensated donor-impurity concentration (N{sub d}–N{sub a}) in the base electrode of Schottky diodes and JBS diodes based on 4H-SiC have been studied upon their irradiation with 0.9-MeV electrons and 15-MeV protons. The carrier-removal rate was 0.07–0.15 cm{sup –1} under electron irradiation and 50–70 cm{sup –1} under proton irradiation. It was shown that the current–voltage characteristics of the devices under study remain rectifying at electron irradiation doses of up to ~1017 cm{sup –2}. It was demonstrated that the radiation hardness of the SiC-based devices under study substantially exceeds that of silicon p–i–n diodes with similar breakdown voltages.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

In-situ measurement of irradiation behavior in LiNbO 3

In-situ measurement of LiNbO 3 based surface acoustic wave (SAW) crystal resonator device under irradiation was demonstrated and used to characterize the impact of radiation on physical properties of this material. The resonant frequency of the SAW device was monitored as the output power of the reactor was varied. Upon step increase of the reactor power, a gradual shift in the device’s resonant frequency was observed. This frequency shift initially exhibits a linear growth and eventually reaches an equilibrium value proportional to the reactor power. The observed behavior can be attributed to two competing processes: increase of temperature due to gamma heating or accumulation of irradiation induced defects. In both cases, the response is attributed to changes in the physical properties of LiNbO 3 , particularly the elastic constants. This demonstrated ability to measure materials properties under irradiation is attractive for development of sensors and performing materials science under irradiation.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2017

The Off-Site Source Recovery Program Capabilities in Recovering Transuranic Sealed Sources - 17599

Over the past 16 years, the mission of the Off-Site Source Recovery Program (OSRP) has been recovering disused radioactive sealed sources in the interest of national security, public health and safety. This program, which is sponsored by the National Nuclear Security Administration's Office of Global Material Security's Office of Radiological Security, is managed at Los Alamos National Laboratory and Idaho National Laboratory and has recovered sources worldwide. To date, OSRP has recovered more than 38,000 sources from over 1,300 locations worldwide. Since its inception, OSRP has grown from recovering only sealed sources containing one transuranic (TRU) isotope, Pu-239, in the early days of the program, to recovering sealed sources containing several other TRU and non-TRU isotopes. Primarily, OSRP's mission includes Pu-238, Pu-239, Am-241, Cf-252, Cm-244, Sr-90, Cs-137, Co-60, Ir-192 and Ra-226 sources that are US-origin, defense related and not commercially disposable. Over the lifetime of this program the types of recoveries performed have expanded from a single site to multi-site round-up recoveries. An additional approach, referred to as self-ship recoveries, is also used in cases where only a few sources may be present at a licensee's site. In these situations, the licensee ships their source(s) to an OSRP staging facility for ultimate consolidation and disposal. OSRP recovers sources from many types of licensees, with the majority of sources being removed from industry, universities and hospitals. These include sealed sources used in industrial radiological devices like moisture-density gauges and thickness gauges, medical devices such as blood irradiators and radiotherapy devices and sealed sources from nuclear power plants, among others. The recovery and management of sealed sources is a complex process covering multidisciplinary areas, including source construction, characteristics of the radioactive material, source packaging and transportation per DOT regulations, safe and secure storage, and final disposition per waste acceptance criteria of repository sites. (authors)

07 ISOTOPE AND RADIATION SOURCES↗
DOE OSTI2023

Challenges and successes in establishing a multipurpose fuels and materials irradiation capsule [Slides]

This presentation discusses the challenges and success related to designing and fabricating multipurpose capsules for irradiation experiments for irradiation within the Advanced Test Reactor (ATR) to be presented at tje DEVICE-MTR irradiation experiment design working group meeting hosted by the Japanese Atomic Energy Agency (JAEA). The information herein is limited to the design of the capsules only and no programmatic information from any project supporting the design of the multipurpose capsule is discussed. The intent of the design team was establish a capsule design that could accommodate multiple different irradiation project needs for the irradiation of nuclear fuel and materials of interest in the nuclear field. The main points of the presentation are as follows: use of tin as a molten thermal bond material was selected for the fueled capsule design and was found to be inadequate as it would corrode the stainless steel at high temperatures, this capsule design has high sensitivity to manufacturing of the gas gap and control of the gas mixture, and the fueled capsule has experienced welding challenges with the inner capsule material 800H Incoloy.

42 ENGINEERING↗
DOE OSTI2019

Microwave Irradiation Intensified Process for Scalable Functional Device Assembly

The environment pollution is a serious issue worldwide for human beings, which calls for ever-increasing demand towards environmental protection. Efficient enabling and utilization of various functional devices represent an essential solution to pursue the environment sustainability. Nanotechnology is emerging as an effective approach to improve the efficiency of functional devices for a variety of environmental applications. For example, the nanomaterials-based catalysts are being widely used in air pollution control, enabling catalysts with significantly enhanced performance. Scalable integration of functional nanostructural entities such as nanoparticles, nanowires, nanosheets into applicable three-dimensional (3-D) platform holds the keys of industrial-relevant manufacture of high-efficiency catalytic devices for emission control. Among all the integration approaches, the wet-chemical based integration is one of the top options due to its advantages in low-cost, flexibility in substrate geometry and composition, ease of operation, and high repeatability. The wet-chemical based processes usually require continuous heating to initiate the chemical reactions, which is regularly achieved by conventional resistive heating. However, such conventional heating method is plaqued by a poor heating efficiency. Moreover, the conventional heating is not suitable for those substrates with three-dimensional (3D) or complex geometry since it hardly provides sufficient heat transfer and mass transport within substrates, leading to poor uniformity of nanostructure deposition and low production rate. Thus, there is urgent demand to develop high-efficiency wet-chemical based integration strategy for nanostructured functional devices. In this project, a novel microwave-irradiation-intensified hydrothermal manufacturing process was developed for scalable manufacture of nanostructured monolithic catalytic devices. A wide array of metal oxide nanostructured coatings has been in situ grown on various 3D substrates for emission control applicaitons such as cordierite honeycombs and silicon carbide honeycomb. The growth efficiency, production rate, and distribution uniformity of nanostructure coatings obtained from microwave heating and conventional heating are investigated, which reveals the boosting effect of microwave irradiation on hydrothermal reactions. The silicon carbide honeycomb is found to be more favorable to microwave adsorption in contrast to cordierite honeycomb, and the corresponding reaction mechanism is studied. The obtained catalysts are used for catalytic oxidation of Volatile Organic Compounds (VOCs), showing excellent catalytic performance at low temperature for various compounds. As the proof of concept, the design of integrated manufacturing system for the microwave irradiation assisted continuous production of nanostructure array based monolithic catalysts is presented, which holds the key to mass production of monolithic catalysts in near future.

42 ENGINEERING↗
DOE OSTI2016

Defect characterization of proton irradiated GaAs pn-junction diodes with layers of InAs quantum dots

In order to expand the technology of III-V semiconductor devices with quantum structures to both terrestrial and space use, radiation induced defects as well as native defects generated in the quantum structures should be clarified. Electrically active defects in GaAs p{sup +}n diodes with embedded ten layers of InAs quantum dots (QDs) are investigated using Deep Level Transient Fourier Spectroscopy. Both majority carrier (electron) and minority carrier (hole) traps are characterized. In the devices of this study, GaP layers are embedded in between the QD layers to offset the compressive stress introduced during growth of InAs QDs. Devices are irradiated with high energy protons for three different fluences at room temperature in order to characterize radiation induced defects. Seven majority electron traps and one minority hole trap are found after proton irradiation. It is shown that four electron traps induced by proton irradiation increase in proportion to the fluence, whereas the EL2 trap, which appears before irradiation, is not affected by irradiation. These defects correspond to electron traps previously identified in GaAs. In addition, a 0.53 eV electron trap and a 0.14 eV hole trap are found in the QD layers before proton irradiation. It is shown that these native traps are also unaffected by irradiation. The nature of the 0.14 eV hole trap is thought to be Ga-vacancies in the GaP strain balancing layers.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2023

Interinstitutional Study of the New EURO-GANEX Process Resistance by Gamma Irradiation Test Loops

As part of the homogeneous actinides recycling strategy, the EURO-GANEX process is one of the most promising options to achieve the goal of minor actinides recovery. However, EURO-GANEX also has various drawbacks that are being addressed. Improvements made to EURO-GANEX system have resulted in the emergence of the so-called New EURO-GANEX process, where the composition of the solvent has been modified by replacing TODGA and DMDOHEMA with cis-mTDDGA in the organic phase and SO3-Ph-BTP with PyTri-Diol in the aqueous phase in order to resolve important issues. The objective of this work is twofold: evaluate the gamma radiolysis resistance of the new EURO-GANEX process by dynamic irradiation conditions simulating the three main steps of the process and validate the design of CIEMAT Náyade, CEA Marcel and INL irradiation loop devices since each of them mimics different aspects of the real process. Náyade and the INL loops could irradiate together the organic and aqueous phases, whereas in the CEA loop, the irradiated solvent is recycled continuously inside a platform with several stages of mixer-settlers containing aqueous flows simulating the three main steps of the process. The extraction performances and changes in the composition of the solvent have been analysed during the irradiation experiment by different techniques: gamma spectrometry and ICP-MS/OES for cations or tracers extraction, and HPLC-MS to quantify the degradation and evaluate the degradation compounds. Additionally, in spite of some differences between the three-irradiation facilities, this inter-institutional study shows that they are three comparative tools, which provide results on the stability towards radiolysis of a liquid-liquid extraction system. Favourable extraction results for the different steps are obtained according to the static irradiation studies found in literature. However, the degradation of cis-mTDDGA is appreciable leading to degradation compounds, some of which form precipitates and produce important changes in viscosity, important aspects that must be addressed prior to the successful industrial application of the new EURO-GANEX process.

38 RADIATION CHEMISTRY, RADIOCHEMISTRY, AND NUCLEA↗
DOE OSTI2021

DOE-GENIORS Dynamic Irradiation Testing

As part of the homogeneous actinides recycling strategy, the EURO-GANEX process is one of the most promising options to achieve the goal of minor actinides recovery. Improvements made to EURO-GANEX system have resulted in the emergence of the so-called New EURO-GANEX process, where the composition of the solvent has been modified by replacing TODGA and DMDOHEMA with cis-mTDDGA in the organic phase and SO3-Ph-BTP with PyTri-Diol in the aqueous phase in order to resolve important issues. The objective of this work is twofold: evaluate the gamma radiolytic resistance of the new EURO-GANEX process by dynamic irradiation conditions simulating the three main steps of the process, and validate the design of CIEMAT Náyade, CEA Marcel and INL irradiation loop devices since each of them mimics different aspects of the real process. Náyade and the INL loops could irradiate the organic and aqueous phases together, whereas in the CEA loop, the irradiated solvent is recycled continuously inside a platform with several stages of mixer-settlers containing aqueous flows simulating the three main steps of the process. The extraction performances and changes in the composition of the solvent have been analyzed during the irradiation experiment by different techniques: gamma spectrometry and ICP-MS/OES for cations or radioactive tracer extraction, and HPLC-MS to identify and quantify the degradation compounds. Despite some differences between the three-irradiation facilities, this inter-institutional study shows that these three comparative tools provide similar trends in the radiolytic stability of a liquid-liquid extraction system. Favourable extraction results for the different steps are obtained according to the static irradiation studies found in literature. However, the degradation of cis-mTDDGA is appreciable leading to degradation compounds, some of which form precipitates and produce important changes in viscosity, important aspects that must be addressed prior to the successful industrial application of the new EURO-GANEX process.

38 - RADIATION CHEMISTRY, RADIOCHEMISTRY, AND NUCL↗