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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

S-band acoustoelectric amplifier in an InGaAs-AlScN-SiC architecture

Here, we report on an acoustoelectric slab waveguide heterostructure for phonon amplification using a thin Al 0.58 Sc 0.42 N film grown directly on a 4H-SiC substrate with an ultra-thin In 0.53 Ga 0.47 As epitaxial film heterogeneously integrated onto the surface of the Al 0.58 Sc 0.42 N. The aluminum scandium nitride film grown directly on silicon carbide enables a thin (∼850 nm thick) piezoelectric film to be deposited on a thermally conductive bulk substrate (370 W/m K for 4H-SiC); the high thermal conductivity of the substrate, large mobility of the semiconductor (∼7000 cm 2 /V s), and low carrier concentration (∼5 × 10 15 cm −3 ) yield low self-heating. A Sezawa mode with optimal overlap between the peak of its evanescent electric field and the semiconductor charge carriers is supported. The high velocity of the heterostructure materials allows us to operate the Sezawa mode amplifier at 3.05 GHz, demonstrating a gain of 500 dB/cm (40 dB in 800 μm). Additionally, a terminal end-to-end radio frequency gain of 7.7 dB and a nonreciprocal transmission of 52.6 dB are achieved with a dissipated DC power of 2.3 mW. In conclusion, the power added efficiency and acoustic noise figure are also characterized.

Hackett, L.↗
DOE OSTI2025

Modeling neutral defects in III-V ternary alloys with a special quasirandom structure: Analysis of As- and III-site point defects in InGaAs

While first-principles density functional theory modeling has become a vital tool to investigate defect properties in semiconductors, the lack of crystalline periodicity in pseudobinary random composition alloys, such as In 1−𝑥 ⁢Ga 𝑥 ⁢As, complicates such analyses. We present a simulation strategy to systematically take into account the variability in the local defect environment in order to predict statistical properties of neutral intrinsic defects in In 1−𝑥⁢ Ga 𝑥 ⁢As. We use a comprehensive sampling from a modest-sized 64-atom special quasirandom structure (SQS) to define a statistically representative set of defects, and use a 512-atom hypercell, a 2 × 2 × 2 supercell of SQS supercells, to achieve cell-size convergence. We articulate an equivalent site principle and describe how it constrains atomic chemical reference energies in computation of defect formation energies in pseudobinary alloys. A simple protocol for estimating reference energies for the Ga and In atoms sharing the III site succeeds in obtaining the equivalence of defects at Ga-sites and In sites in the SQS supercell, (<30 meV differences in average formation energies). For III-site defects, such as the As antisite As III , the statistical variability in formation energies is modest, ≈ 0.1–0.2 eV. The variability in formation energy at As-site defects, such as the As vacancy 𝑣 As , can be much larger, >1 eV. The As antisite is shown to be a low-energy defect and the most likely to be present in as-grown materials, just as in GaAs. All other defects are higher-energy defects unlikely to be important in native material, but potentially important in radiation-damaged material. With a strong variability in defect energies, especially on the As-site, explicit consideration of statistical variability due to compositional randomness will be imperative for meaningful and quantitative comparisons to experiment.

Density functional theory↗
NASA NTRS1987

Optical investigation of highly strained InGaAs-GaAs multiple quantum wells

Low-temperature optical transmission spectra of several In(x)Ga(1-x)/GaAs strained MQWs with x = 0.13-0.19 and well widths of 85-213 A have been measured. The excitonic transitions up to 3C-3H were observed along with steplike structures corresponding to band-to-band transitions, identified as 1C-1L transitions. By fitting experimental results to the calculations, it is concluded that the light holes are in the GaAs barrier region (type II MQW), and the valence-band offset is determined to be 0.30. Attention is given to a possible system in which the transition from type I to type II for light holes might be observed.

Ji, G.↗
NASA NTRS1989

Room-temperature InGaAs detector arrays for 2.5 microns

This paper describes new alloy heterojunction detectors of In(.8)Ga(.2)As/InAs(.6)P(.4) which can detect light between 1.7 and 2.6 microns with 50 percent quantum efficiency and 5 mA/sq cm dark current (-1 V) density at room temperature. Wafer probe data showed that over 50 good contiguous 100 micron diameter devices (spaced 400 microns) could be made on a 25 x 30 mm wafer with overall yield above 93 percent. The ability to operate under -1 V reverse bias makes these devices ideally compatible with existing commercial multiplexer readouts.

Olsen, G. H.↗
NASA NTRS1990

A 128 x 128 InGaAs detector array for 1.0 - 1.7 microns

A two-dimensional 128 x 128 detector array for the 1.0 - 1.7 micron spectral region has been demonstrated with indium gallium arsenide. The 30 micron square pixels had 60 micron spacing in both directions and were designed to be compatible with a 2D Reticon multiplexer. Dark currents below 100 pA, capacitance near 0.1 pF, and quantum efficiencies above 80 percent were measured. Probe maps of dark current and quantum efficiency are presented along with pixel dropout data and wafer yield which was as high as 99.89 percent (7 dropouts) in an area of 6528 pixels and 99.37 percent (103 dropouts) over an entire 128 x 128 pixel region.

Olsen, G.↗
NASA NTRS2006

A Novel, Free-Space Optical Interconnect Employing Vertical-Cavity Surface Emitting Laser Diodes and InGaAs Metal-Semiconductor-Metal Photodetectors for Gbit/s RF/Microwave Systems

Emerging technologies and continuing progress in vertical-cavity surface emitting laser (VCSEL) diode and metal-semiconductor-metal (MSM) photodetector research are making way for novel, high-speed forms of optical data transfer in communication systems. VCSEL diodes operating at 1550 nm have only recently become commercially available, while MSM photodetectors are pushing the limits of contact lithography with interdigitated electrode widths reaching sub micron levels. We propose a novel, free-space optical interconnect operating at about 1Gbit/s utilizing VCSEL diodes and MSM photodetectors. We report on development, progress, and current work, which are as follows: first, analysis of the divergent behavior of VCSEL diodes for coupling to MSM photodetectors with a 50 by 50 m active area and second, the normalized frequency response of the VCSEL diode as a function of the modulating frequency. Third, the calculated response of MSM photodetectors with varying electrode width and spacing on the order of 1 to 3 m as well as the fabrication and characterization of these devices. The work presented here will lead to the formation and characterization of a fully integrated 1Gbit/s free-space optical interconnect at 1550 nm and demonstrates both chip level and board level functionality for RF/microwave digital systems.

Savich, Gregory R.↗
NASA NTRS2017

Successful Space Flight of High-Speed InGaAs Photodiode Onboard the International Space Station

Photonic systems are required for several space applications, including satellite communication links and lidar sensors. Although such systems are ubiquitous in terrestrial applications, deployment in space requires the constituent components to withstand extreme environmental conditions, including wide operating temperature range, mechanical shock and vibration, and radiation. These conditions are significantly more stringent than alternative standards, namely Bellcore GR-468 and MIL-STD 883, which may be satisfied by typical, commercially available, photonic components. Furthermore, it is very difficult to simultaneously reproduce several aspects of space environment, including exposure to galactic cosmic rays (GCR), in a laboratory. Therefore, it is necessary to operate key photonic components in space to achieve a technology readiness level of 7 and beyond. Accordingly, the International Space Station (ISS) provides an invaluable test bed for qualifying such components for space missions. We present a fiber-pigtailed photodiode module, having a -3 dB bandwidth of 16.8 GHz, that survived 18 months on the ISS as part of the Materials International Space Station Experiment (MISSE) 7 mission. This module was launched by NASA Langley Research Center on November 16, 2009 on the Space Shuttle Atlantis (STS-129), as part of their lidar transceiver components. While orbiting on the ISS in a passive experiment container, the photodiode module was exposed to extreme temperature cycling from -157 degrees Celsius to +121 degrees Celsius 16 times a day, proton radiation from the inner Van Allen belt at the South Atlantic Anomaly, and galactic cosmic rays. The module returned to Earth on the Space Shuttle Endeavor (STS-134) on June 1, 2011 for further characterization. The post flight test of the photodiode module, shown in Fig. 1a, demonstrates no change in the module's performance, thus proving its survivability during launch and in space environment.

Joshi, Abhay↗
NASA NTRS2012

Inverted Three-Junction Tandem Thermophotovoltaic Modules

An InGaAs-based three-junction (3J) tandem thermophotovoltaic (TPV) cell has been investigated to utilize more of the blackbody spectrum (from a 1,100 C general purpose heat source GPHS) efficiently. The tandem consists of three vertically stacked subcells, a 0.74-eV InGaAs cell, a 0.6- eV InGaAs cell, and a 0.55-eV InGaAs cell, as well as two interconnecting tunnel junctions. A greater than 20% TPV system efficiency was achieved by another group with a 1,040 C blackbody using a single-bandgap 0.6- eV InGaAs cell MIM (monolithic interconnected module) (30 lateral junctions) that delivered about 12 V/30 or 0.4 V/junction. It is expected that a three-bandgap tandem MIM will eventually have about 3 this voltage (1.15 V) and about half the current. A 4 A/cm2 would be generated by a single-bandgap 0.6-V InGaAs MIM, as opposed to the 2 A/cm2 available from the same spectrum when split among the three series-connected junctions in the tandem stack. This would then be about a 50% increase (3xVoc, 0.5xIsc) in output power if the proposed tandem replaced the single- bandgap MIM. The advantage of the innovation, if successful, would be a 50% increase in power conversion efficiency from radioisotope heat sources using existing thermophotovoltaics. Up to 50% more power would be generated for radioisotope GPHS deep space missions. This type of InGaAs multijunction stack could be used with terrestrial concentrator solar cells to increase efficiency from 41 to 45% or more.

Wojtczuk, Steven↗