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Indium foil, used as an interface material in transistor mountings, greatly reduces the thermal resistance of beryllia washers. This method improves the heat dissipation of power transistors in a vacuum environment.
Operation of indium adhesion surface tester for surface contamination measurements
Indium adhesion surface tester for measuring contamination levels in electrical and mechanical devices
Epitaxial growth of indium antimonide thin films as studied in situ by electron diffraction
Backward diodes in indium arsenide for microwave mixing
Indium abundances in chondritic and achondritic meteorites and terrestrial rocks determined by radiochemical neutron activation analysis
Vapor deposition and acceptor impurity diffusion techniques are used to prepare indium-gallium phosphide junctions. Certain problems in preparation are overcome by altering gas flow conditions and by increasing the concentration of phosphine in the gas. A general formula is given for the alloy's composition.
Planar array processing of indium arsenide wafers includes dicing into a prescribed geometry, then cleaning and drying, and finally pre-oxidizing in an oxygen atmosphere at 500 degrees C. The last step forms an oxide interface between the InAs surface and a glow discharge deposited layer of silicon dioxide.
Studying vaporization of indium-gallium oxide, and gallium-aluminum oxide by Knudsen effusion mass spectroscopy
Metal-insulator-magnetoresistance, bulk, and surface properties of indium antimonide compound semiconductor material
Tests with stainless steel in sliding contact with lead, indium, and tin coatings in liquid hydrogen to determine their lubricating capability
Spherical indium crystal manufacture in space, suspending and positioning weightless containerless melt in air and vacuum by adhesion and cohesion for crystal growth
Gold films are used as an alloying flux to form 5-micron-thick indium film seals at temperatures below 300 C. Pyrex was sealed to quartz, ULE, CER-VIT, Irtran 2, Ge, GaAs, Invar, Kovar, Al, and Cu. The seals can also be used as current feedthroughs and graded seals.
Results of two recent crystal growth experiments conducted aboard Skylab are analyzed for thermoconvective aspects. Theoretical temperature and velocity profiles in the crystal melts are predicted via computer modeling. These results are compared with experimental data obtained from Skylab investigators. From theoretical considerations, both indium-antimonide experiments should have exhibited substantial thermocapillary convection, but did not due to probable oxide film interference and/or opposing solutal effects.
Heterojunction diodes of indium tin oxide films sputtered on to p-silicon using ion-beam techniques display significant photovoltaic effects when exposed to sunlight. Galvanomagnetic and optical measurements confirm that the oxide films are highly degenerate transparent semiconductors. At a tin oxide concentration of 10%, an open-circuit voltage of 0.51 V was observed along with a short-circuit current of 32 mA/sq cm, a fill factor of 0.70, and a conversion efficiency of 12%. As the concentration was raised to 70%, the voltage remained steady, the current fell to 27 mA/sq cm, and the fill factor fell to 0.60
Problems encountered in the development of an indium antimonide charge coupled device for infrared imaging and real time signal processing on the focal plane are summarized. A new generation chip is described which contains, 2, 4, and 20-element imagers, a 4-element TDI array, a monolithic gated charge integrator, and test devices. A system study of a future LANDSAT sensor system configured around an InSb TDi array is considered.
As part of a study to understand the influence of gravity, cooling rate and composition on the structure of liquid phase immiscible materials, two alloys, Al-40 wt % In and Al-70 wt % In were thermally treated on the SPAR II rocket flight. The treatments involved homogenization at a temperature above the miscibility gap and then rapid cooling through the miscibility gap followed by complete solidification. The last two steps were performed while acceleration levels were less than 4 x 10 to the -5th g. The flight alloys produced unexpected results. Instead of fine uniform structures, the alloys consisted of a macroscopically sized aluminum-rich central region surrounded by indium-rich metal.
Second-surface mirrors are formed by vapor deposition of indium onto glass. Mirrors have reflectances comparable to those of ordinary silver or aluminized mirrors and are expected to show superior corrosion resistance. Mirrors may be used in solar concentrators.