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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
NASA NTRS1995

Design of a three-layer antireflection coating for high efficiency indium phosphide solar cells using a chemical oxide as first layer

It is well known that the behavior of III-V compound based solar cells is largely controlled by their surface, since the majority of light generated carriers (63% for GaAs and 79% for InP) are created within 0.2 mu m of the surface of the illuminated cell. Consequently, the always observed high surface recombination velocity (SRV) on these cells is a serious limiting factor for their high efficiency performance, especially for those with p-n junction made by either thermal diffusion or ion implantation. A good surface passivation layer, ideally a grown oxide as opposed to a deposited one, will cause a significant reduction in the SRV without adding interface problems, thus improving the performance of III-V compound based solar cells. Another significant benefit to the overall performance of the solar cells can be achieved by a substantial reduction of their large surface optical reflection by the use of a well designed antireflection (AR) coating. In this paper, we demonstrate the effectiveness of using a chemically grown thermally and chemically stable oxide, not only for surface passivation but also as an integral part of a 3-layer AR coating for thermally diffused p+n InP solar cells. A phosphorus-rich interfacial oxide, In(PO3)3, is grown at the surface of the p+ emitter using an etchant based on HNO3, o-H3PO4 and H2O2. This oxide has the unique properties of passivating the surface as well as serving as an efficient antireflective layer yielding a measured record high AMO open-circuit voltage of 890.3 mV on a thermally diffused InP(Cd,S) solar cell. Unlike conventional single layer AR coatings such as ZnS, Sb2O3, SiO or double layer AR coatings such as ZnS/MgF2 deposited by e-beam or resistive evaporation, this oxide preserves the stoichiometry of the InP surface. We show that it is possible to design a three-layer AR coating for a thermally diffused InP solar cell using the In(PO3)3 grown oxide as the first layer and Al2O3 and MgF2 as the second and third layers respectively, so as to yield an overall theoretical reflectance of less than 2%. Since chemical oxides are readily grown on III-V semiconductors materials, the technique of using the grown oxide layer to both passivate the surface as well as serve as the first of a multilayer AR coating should work well for all III-V compound-based solar cells.

Moulot, Jacques↗
NASA NTRS1974

Ships/Trains/Planes/Automobiles: A Renaissance of their Interface

This paper highlights some of the major multi-modal interface problems created by technological advances, socio-political individualism and the flexibility of choices we expect from our transportation modes. The emphasis is on the need for a comprehensive national network of multi-modal priorities to enhance the movement of people and goods within the changing physical shape of our cities.

Allan, Stanley N.↗
NASA NTRS1999

A Gas-Kinetic Method for Hyperbolic-Elliptic Equations and Its Application in Two-Phase Fluid Flow

A gas-kinetic method for the hyperbolic-elliptic equations is presented in this paper. In the mixed type system, the co-existence and the phase transition between liquid and gas are described by the van der Waals-type equation of state (EOS). Due to the unstable mechanism for a fluid in the elliptic region, interface between the liquid and gas can be kept sharp through the condensation and evaporation process to remove the "averaged" numerical fluid away from the elliptic region, and the interface thickness depends on the numerical diffusion and stiffness of the phase change. A few examples are presented in this paper for both phase transition and multifluid interface problems.

Xu, Kun↗
NASA NTRS1995

Design of a Three-Layer Antireflection Coating for High Efficiency Indium Phosphide Solar Cells Using a Chemical Oxide as First Layer

It is well known that the behavior of III-V compound based solar cells is largely controlled by their surface, since the majority of light generated carriers (63% for GaAs and 79% for InP) are created within 0.2 microns of the illuminated surface of the cell. Consequently, the always observed high surface recombination velocity (SRV) on these cells is a serious limiting factor for their high efficiency performance, especially for those with the p-n junction made by either thermal diffusion or ion implantation. A good surface passivation layer, ideally, a grown oxide as opposed to a deposited one, will cause a significant reduction in the SRV without adding interface problems, thus improving the performance of III-V compound based solar cells. Another significant benefit to the overall performance of the solar cells can be achieved by a substantial reduction of their large surface optical reflection by the use of a well designed antireflection (AR) coating. In this paper, we demonstrate the effectiveness of using a chemically grown, thermally and chemically stable oxide, not only for surface passivation but also as an integral part of a 3- layer AR coating for thermally diffused p(+)n InP solar cells. A phosphorus-rich interfacial oxide, In(PO3)3, is grown at the surface of the p(+) emitter using an etchant based on HNO3, o-H3PO4 and H2O2. This oxide has the unique properties of passivating the surface as well as serving as a fairly efficient antireflective layer yielding a measured record high AM0, 25 C, open-circuit voltage of 890.3 mV on a thermally diffused InP(Cd,S) solar cell. Unlike conventional single layer AR coatings such as ZnS, Sb2O3, SiO or double layer AR coatings such as ZnS/MgF2 deposited by e-beam or resistive evaporation, this oxide preserves the stoichiometry of the InP surface. We show that it is possible to design a three-layer AR coating for a thermally diffused InP solar cell using the In(PO3)3 grown oxide as the first layer and Al2O3, MgF2 or ZnS, MgF2 as the second and third layers respectively, so as to yield an overall theoretical reflectance of less than 2%. Since chemical oxides are readily grown on III-V semiconductor materials, the technique of using the grown oxide layer to both passivate the surface as well as serve as the first of a multilayer AR coating, should work well for essentially all III-V compound-based solar cells.

Moulot, Jacques↗
NASA NTRS2001

Improved Quick Disconnect (QD) Interface Through Fail Safe Parts Identification

An extensive review of existing Quick Disconnects (QDs) mating and demating operations was performed to determine which shuttle part interface identifications and procedures contribute to human factor errors. The research methods used consisted of interviews with engineers and technicians, examination of incident reports, critiques of video and audio tapes of QD operations, and attendance of a Hyper QD operational course. The data strongly suggests that there are inherit human factor errors involved in QD operations. To promote fail-safe operations, QD interface problem areas and recommendations were outlined and reviewed. It is suggested that dialogue, investigations and recommendations continue.

Blanch-Payne, Evelyn↗
NASA NTRS2006

Numerical Schemes for the Hamilton-Jacobi and Level Set Equations on Triangulated Domains

Borrowing from techniques developed for conservation law equations, we have developed both monotone and higher order accurate numerical schemes which discretize the Hamilton-Jacobi and level set equations on triangulated domains. The use of unstructured meshes containing triangles (2D) and tetrahedra (3D) easily accommodates mesh adaptation to resolve disparate level set feature scales with a minimal number of solution unknowns. The minisymposium talk will discuss these algorithmic developments and present sample calculations using our adaptive triangulation algorithm applied to various moving interface problems such as etching, deposition, and curvature flow.

Barth, Timothy J.↗
NASA NTRS2009

Evolvable Neural Software System

The Evolvable Neural Software System (ENSS) is composed of sets of Neural Basis Functions (NBFs), which can be totally autonomously created and removed according to the changing needs and requirements of the software system. The resulting structure is both hierarchical and self-similar in that a given set of NBFs may have a ruler NBF, which in turn communicates with other sets of NBFs. These sets of NBFs may function as nodes to a ruler node, which are also NBF constructs. In this manner, the synthetic neural system can exhibit the complexity, three-dimensional connectivity, and adaptability of biological neural systems. An added advantage of ENSS over a natural neural system is its ability to modify its core genetic code in response to environmental changes as reflected in needs and requirements. The neural system is fully adaptive and evolvable and is trainable before release. It continues to rewire itself while on the job. The NBF is a unique, bilevel intelligence neural system composed of a higher-level heuristic neural system (HNS) and a lower-level, autonomic neural system (ANS). Taken together, the HNS and the ANS give each NBF the complete capabilities of a biological neural system to match sensory inputs to actions. Another feature of the NBF is the Evolvable Neural Interface (ENI), which links the HNS and ANS. The ENI solves the interface problem between these two systems by actively adapting and evolving from a primitive initial state (a Neural Thread) to a complicated, operational ENI and successfully adapting to a training sequence of sensory input. This simulates the adaptation of a biological neural system in a developmental phase. Within the greater multi-NBF and multi-node ENSS, self-similar ENI s provide the basis for inter-NBF and inter-node connectivity.

Curtis, Steven A.↗
NASA NTRS2003

Network Extender for MIL-STD-1553 Bus

An extender system for MIL-STD-1553 buses transparently couples bus components at multiple developer sites. The bus network extender is a relatively inexpensive system that minimizes the time and cost of integration of avionic systems by providing a convenient mechanism for early testing without the need to transport the usual test equipment and personnel to an integration facility. This bus network extender can thus alleviate overloading of the test facility while enabling the detection of interface problems that can occur during the integration of avionic systems. With this bus extender in place, developers can correct and adjust their own hardware and software before products leave a development site. Currently resident at Johnson Space Center, the bus network extender is used to test the functionality of equipment that, although remotely located, is connected through a MILSTD- 1553 bus. Inasmuch as the standard bus protocol for avionic equipment is that of MIL-STD-1553, companies that supply MIL-STD-1553-compliant equipment to government or industry and that need long-distance communication support might benefit from this network bus extender

Marcus, Julius↗
NASA NTRS1992

Finite element developments for two dimensional multiple-interface phase change problems

Finite element developments for multiple phase change problems in two-dimensional models are presented for the first time. The enthalpy method is used to simulate latent heat release in conjunction with fixed grid techniques. An unconditionally stable implicit method is used for the time integration. The effects of boundary conditions and the different phase regions on the multiple phase front developments are examined for numerous examples. Discussions and conclusions are appropriately addressed.

Ouyang, Tianhong↗
NASA NTRS1972

Stresses in bonded materials with a crack perpendicular to the interface.

The problem of two elastic bonded half planes containing a crack perpendicular to the interface is considered. First the solution for the semi-infinite crack under concentrated wedge loading is given. Then the problem of a finite crack fully imbedded in one of the half planes of terminating at the interface is considered. The Mellin transform in conjunction with the dislocations is used to formulate the problem and to derive the integral equation. The integral equation is solved; the stress intensity factors, the crack surface displacement, and the stresses around the crack tip terminating at the interface are obtained. Noting that the power of the singularity for the interface tip of the crack is not -1/2, a tentative fracture criterion dealing with the initiation of fracture propagation is proposed.

Cook, T. S.↗
NASA NTRS1984

Aircraft automation - The problem of the pilot interface

In recent years, aviation has been experiencing a rapid growth. This growth is expected to continue, and aircraft operations in the IFR (instrument flight rules) environment, for example, are predicted to increase dramatically in the next 10 to 12 years. However, it has been found the IFR accidents are increasing at about the same rate as IFR operations, because an associated high workload can lead to human error. For this reason, NASA and others are exploring the use of aircraft systems technology as a means for reducing the pilot workload and enhancing the safety and utility of the aircraft operations. However, recent research has shown that automation, implemented with insufficient consideration to the human factors interface, can frequently create more problems than it solves. Some of this research is discussed, examples of the encountered problems are shown, and solutions regarding the arising problems are suggested.

Bergeron, H. P.↗
NASA NTRS1987

Exact image method for Gaussian beam problems involving a planar interface

Exact image method, recently introduced for the solution of electromagnetic field problems involving sources above a planar interface or two homogeneous media, is shown to be valid also for sources located in complex space, which makes its application possible for Gaussian beam analysis. It is demonstrated that the Goos-Hanchen shift and the angular shift of a TE polarized beam are correctly given as asymptotic results by the exact reflection image theory. Also, the apparent image location giving the correct Gaussian beam transmitted through the interface is obtained as another asymptotic check. The present theory makes it possible to calculate the exact coupling from the Gaussian beam to the reflected and refracted beams, as well as to the surface wave.

Lindell, I. V.↗
NASA NTRS1987

Exact-image method for Gaussian-beam problems involving a planar interface

The exact-image method, recently introduced for the solution of electromagnetic field problems involving sources above a planar interface between two homogeneous media, is shown to be valid also for sources located in complex space, which makes its application possible for Gaussian-beam analysis. It is demonstrated that the Goos-Hanchen shift and the angular shift of a TE-polarized beam are correctly given as asymptotic results by the exact-reflection-image theory. Also, the apparent-image location giving the correct Gaussian beam transmitted through the interface is obtained as another asymptotic check. The theory described here makes it possible to calculate the exact coupling from the Gaussian beam to the reflected and refracted beams as well as to the surface wave.

Lindell, Ismo V.↗
NASA NTRS1992

Finite element simulations involving simultaneous multiple interface fronts in phase change problems

The present paper describes the simulation of phase change problems involving simultaneous multiple interface fronts employing the finite element method. Much of the past investigations employing finite elements have been restricted to primarily a single phase change situation. The existence of more than one phase, that is, the presence of multiple phase fronts poses certain challenges and further complications. However, the results provide a very interesting thermal behavior for this class of problems. In this paper, attention is focused on fixed grid methods and the trapezoidal family of one-step methods using the enthalpy formulations. Illustrative examples which handle simultaneous multiple fronts in phase change problems are presented.

Ouyang, Tianhong↗
NASA NTRS1984

The movement of particles in liquid metals under gravity forces and the interaction of particles with advancing solid-liquid interface

The problems of shrinkage and gas porosity are discussed. Gravity forces enhance the removal of gas bubbles from a metal melt and contribute to the feeding of shrinkage porosity in castings. Experiments are reviewed which determine how large a density difference is required for metal particles to float or sink in a metal melt and to what extent do factors not considered in Stokes Law influence particle movement in a real system. As to the interaction of particles with an advancing solid-liquid interface, the results indicate that the metal particles are not rejected in a metal melt, and that concentrations of particles in a metal following solidification are due to other factors.

Weinberg, F.↗
NASA NTRS1979

An analysis of interface crack in adhesively bonded lap shear joints

This paper presents an analytical study of interface crack problems in adhesively bonded lap shear joints. A convenient and accurate method of analysis is developed on the basis of conservation laws in elasticity and of the fundamental relationships in fracture mechanics of interface crack problems. The problem is eventually reduced to a system of linear algebraic equations of mixed-mode stress intensity factor solutions. One of the salient features of the present approach is that the interface crack-tip stress intensity solutions can be determined accurately and directly by the information extracted from the far field. Solutions of the interface crack problems in lap shear joints have been obtained for the cases of various adhesive/adherend material systems and geometric configurations of the crack and the joint. Of particular interest is the evaluation of the mixed-mode stress intensity factors and the associated energy release rates. They are determined explicitly to illustrate the fundamental nature of the joint fracture problem.

Wang, S. S.↗