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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
NASA NTRS1989

Multi-port, optically addressed RAM

A random access memory addressing system utilizing optical links between memory and the read/write logic circuits comprises addressing circuits including a plurality of light signal sources, a plurality of optical gates including optical detectors associated with the memory cells, and a holographic optical element adapted to reflect and direct the light signals to the desired memory cell locations. More particularly, it is a multi-port, binary computer memory for interfacing with a plurality of computers. There are a plurality of storage cells for containing bits of binary information, the storage cells being disposed at the intersections of a plurality of row conductors and a plurality of column conductors. There is interfacing logic for receiving information from the computers directing access to ones of the storage cells. There are first light sources associated with the interfacing logic for transmitting a first light beam with the access information modulated thereon. First light detectors are associated with the storage cells for receiving the first light beam, for generating an electrical signal containing the access information, and for conducting the electrical signal to the one of the storage cells to which it is directed. There are holographic optical elements for reflecting the first light beam from the first light sources to the first light detectors.

Johnston, Alan R.↗
NASA NTRS2003

A Genetic Representation for Evolutionary Fault Recovery in Virtex FPGAs

Most evolutionary approaches to fault recovery in FPGAs focus on evolving alternative logic configurations as opposed to evolving the intra-cell routing. Since the majority of transistors in a typical FPGA are dedicated to interconnect, nearly 80% according to one estimate, evolutionary fault-recovery systems should benefit hy accommodating routing. In this paper, we propose an evolutionary fault-recovery system employing a genetic representation that takes into account both logic and routing configurations. Experiments were run using a software model of the Xilinx Virtex FPGA. We report that using four Virtex combinational logic blocks, we were able to evolve a 100% accurate quadrature decoder finite state machine in the presence of a stuck-at-zero fault.

Lohn, Jason↗
NASA NTRS2013

New Techniques for Thermo-electrochemical Analysis of Lithium-ion Batteries for Space Applications

The overall goal of this study was achieved: Replicated the numerical assessment performed by Chen et. al. (2005). Displayed the ability of Thermal Desktop to be coupled with thermo-electrochemical analysis techniques. such that the local heat generated on the cells is a function of the model itself using logic blocks and arrays. Differences in the TD temperature vs. depth of discharge profiles and Chen's was most likely due to differences in two primary areas: Contact regions and conductance values. Differences in density and specific heat values. center dot The model results are highly dependent on the accuracy of the material properties with respect to the multiple layers of an individual cell.

Walker, William↗
NASA NTRS1978

CMOS bulk-metal design handbook

User's guide describes techniques for generating precision mask artwork for complex CMOS integrated circuits, starting from logic diagram. Techniques are based on standard-cell approach. Guide also includes user guidelines for designing efficient CMOS arrays.

Edge, T. M.↗
NASA NTRS2007

NASA Tech Briefs, July 2007

Topics covered include: Miniature Intelligent Sensor Module; "Smart" Sensor Module; Portable Apparatus for Electrochemical Sensing of Ethylene; Increasing Linear Dynamic Range of a CMOS Image Sensor; Flight Qualified Micro Sun Sensor; Norbornene-Based Polymer Electrolytes for Lithium Cells; Making Single-Source Precursors of Ternary Semiconductors; Water-Free Proton-Conducting Membranes for Fuel Cells; Mo/Ti Diffusion Bonding for Making Thermoelectric Devices; Photodetectors on Coronagraph Mask for Pointing Control; High-Energy-Density, Low-Temperature Li/CFx Primary Cells; G4-FETs as Universal and Programmable Logic Gates; Fabrication of Buried Nanochannels From Nanowire Patterns; Diamond Smoothing Tools; Infrared Imaging System for Studying Brain Function; Rarefying Spectra of Whispering-Gallery-Mode Resonators; Large-Area Permanent-Magnet ECR Plasma Source; Slot-Antenna/Permanent-Magnet Device for Generating Plasma; Fiber-Optic Strain Gauge With High Resolution And Update Rate; Broadband Achromatic Telecentric Lens; Temperature-Corrected Model of Turbulence in Hot Jet Flows; Enhanced Elliptic Grid Generation; Automated Knowledge Discovery From Simulators; Electro-Optical Modulator Bias Control Using Bipolar Pulses; Generative Representations for Automated Design of Robots; Mars-Approach Navigation Using In Situ Orbiters; Efficient Optimization of Low-Thrust Spacecraft Trajectories; Cylindrical Asymmetrical Capacitors for Use in Outer Space; Protecting Against Faults in JPL Spacecraft; Algorithm Optimally Allocates Actuation of a Spacecraft; and Radar Interferometer for Topographic Mapping of Glaciers and Ice Sheets.

Source record↗
NASA NTRS1975

Design automation techniques for custom LSI arrays

The standard cell design automation technique is described as an approach for generating random logic PMOS, CMOS or CMOS/SOS custom large scale integration arrays with low initial nonrecurring costs and quick turnaround time or design cycle. The system is composed of predesigned circuit functions or cells and computer programs capable of automatic placement and interconnection of the cells in accordance with an input data net list. The program generates a set of instructions to drive an automatic precision artwork generator. A series of support design automation and simulation programs are described, including programs for verifying correctness of the logic on the arrays, performing dc and dynamic analysis of MOS devices, and generating test sequences.

Feller, A.↗
NASA NTRS1993

Fault handling schemes in electronic systems with specific application to radiation tolerance and VLSI design

Naturally occurring space radiation particles can produce transient and permanent changes in the electrical properties of electronic devices and systems. In this work, the transient radiation effects on DRAM and CMOS SRAM were considered. In addition, the effect of total ionizing dose radiation of the switching times of CMOS logic gates were investigated. Effects of transient radiation on the column and cell of MOS dynamic memory cell was simulated using SPICE. It was found that the critical charge of the bitline was higher than that of the cell. In addition, the critical charge of the combined cell-bitline was found to be dependent on the gate voltage of the access transistor. In addition, the effect of total ionizing dose radiation on the switching times of CMOS logic gate was obtained. The results of this work indicate that, the rise time of CMOS logic gates increases, while the fall time decreases with an increase in total ionizing dose radiation. Also, by increasing the size of the P-channel transistor with respect to that of the N-channel transistor, the propagation delay of CMOS logic gate can be made to decrease with, or be independent of an increase in total ionizing dose radiation. Furthermore, a method was developed for replacing polysilicon feedback resistance of SRAMs with a switched capacitor network. A switched capacitor SRAM was implemented using MOS Technology. The critical change of the switched capacitor SRAM has a very large critical charge. The results of this work indicate that switched capacitor SRAM is a viable alternative to SRAM with polysilicon feedback resistance.

Attia, John Okyere↗
NASA NTRS2009

G(sup 4)FET Implementations of Some Logic Circuits

Some logic circuits have been built and demonstrated to work substantially as intended, all as part of a continuing effort to exploit the high degrees of design flexibility and functionality of the electronic devices known as G(sup 4)FETs and described below. These logic circuits are intended to serve as prototypes of more complex advanced programmable-logicdevice-type integrated circuits, including field-programmable gate arrays (FPGAs). In comparison with prior FPGAs, these advanced FPGAs could be much more efficient because the functionality of G(sup 4)FETs is such that fewer discrete components are needed to perform a given logic function in G(sup 4)FET circuitry than are needed perform the same logic function in conventional transistor-based circuitry. The underlying concept of using G(sup 4)FETs as building blocks of programmable logic circuitry was also described, from a different perspective, in G(sup 4)FETs as Universal and Programmable Logic Gates (NPO-41698), NASA Tech Briefs, Vol. 31, No. 7 (July 2007), page 44. A G(sup 4)FET can be characterized as an accumulation-mode silicon-on-insulator (SOI) metal oxide/semiconductor field-effect transistor (MOSFET) featuring two junction field-effect transistor (JFET) gates. The structure of a G(sup 4)FET (see Figure 1) is the same as that of a p-channel inversion-mode SOI MOSFET with two body contacts on each side of the channel. The top gate (G1), the substrate emulating a back gate (G2), and the junction gates (JG1 and JG2) can be biased independently of each other and, hence, each can be used to independently control some aspects of the conduction characteristics of the transistor. The independence of the actions of the four gates is what affords the enhanced functionality and design flexibility of G(sup 4)FETs. The present G(sup 4)FET logic circuits include an adjustable-threshold inverter, a real-time-reconfigurable logic gate, and a dynamic random-access memory (DRAM) cell (see Figure 2). The configuration of the adjustable-threshold inverter is similar to that of an ordinary complementary metal oxide semiconductor (CMOS) inverter except that an NMOSFET (a MOSFET having an n-doped channel and a p-doped Si substrate) is replaced by an n-channel G(sup 4)FET

Mojarradi, Mohammad↗
NASA NTRS2009

Reconfigurable, Bi-Directional Flexfet Level Shifter for Low-Power, Rad-Hard Integration

Two prototype Reconfigurable, Bi-directional Flexfet Level Shifters (ReBiLS) have been developed, where one version is a stand-alone component designed to interface between external low voltage and high voltage, and the other version is an embedded integrated circuit (IC) for interface between internal low-voltage logic and external high-voltage components. Targeting stand-alone and embedded circuits separately allows optimization for these distinct applications. Both ReBiLS designs use the commercially available 180-nm Flex fet Independently Double-Gated (IDG) SOI CMOS (silicon on insulator, complementary metal oxide semiconductor) technology. Embedded ReBiLS circuits were integrated with a Reed-Solomon (RS) encoder using CMOS Ultra-Low-Power Radiation Tolerant (CULPRiT) double-gated digital logic circuits. The scope of the project includes: creation of a new high-voltage process, development of ReBiLS circuit designs, and adjustment of the designs to maximize performance through simulation, layout, and manufacture of prototypes. The primary technical objectives were to develop a high-voltage, thick oxide option for the 180-nm Flexfet process, and to develop a stand-alone ReBiLS IC with two 8-channel I/O busses, 1.8 2.5 I/O on the low-voltage pins, 5.0-V-tolerant input and 3.3-V output I/O on the high-voltage pins, and 100-MHz minimum operation with 10-pF external loads. Another objective was to develop an embedded, rad-hard ReBiLS I/O cell with 0.5-V low-voltage operation for interface with core logic, 5.0-V-tolerant input and 3.3-V output I/O pins, and 100-MHz minimum operation with 10- pF external loads. A third objective was to develop a 0.5- V Reed-Solomon Encoder with embedded ReBilS I/O: Transfer the existing CULPRiT RS encoder from a 0.35-micron bulk-CMOS process to the ASI 180-nm Flexfet, rad-hard SOI Process. 0.5-V low-voltage core logic. 5.0-V-tolerant input and 3.3-V output I/O pins. 100-MHz minimum operation with 10- pF external loads. The stand-alone ReBiLS chip will allow system designers to provide efficient bi-directional communication between components operating at different voltages. Embedding the ReBiLS cells into the proven Reed-Solomon encoder will demonstrate the ability to support new product development in a commercially viable, rad-hard, scalable 180-nm SOI CMOS process.

DeGregorio, Kelly↗
NASA NTRS2017

Environmental Effects on Data Retention in Flash Cells

Flash technology is being utilized in fuzed munition applications and, based on the development of digital logic devices in the commercial world, usage of flash technology will increase. Antifuse technology, prevalent in non-volatile field programmable gate arrays (FPGAs), will eventually be phased out as new devices have not been developed for approximately a decade. The reliance on flash technology presents a long-term reliability issue for both DoD and NASA safety- and mission-critical applications. A thorough understanding of the data retention failure modes and statistics associated with Flash data retention is of vital concern to the fuze safety community. A key retention parameter for a flash cell is the threshold voltage (VTH), which is an indirect indicator of the amount of charge stored on the cells floating gate. This paper will present the results of our on-going tests: long-term storage at 150 C for a small population of devices, neutron radiation exposure, electrostatic discharge (ESD) testing, and the trends of large populations (over 300 devices for each condition) exposed to three difference temperatures: 25 C, 125 C, and 150 C.

Flash↗
NASA NTRS1982

Electrically reconfigurable logic array

To compose the complicated systems using algorithmically specialized logic circuits or processors, one solution is to perform relational computations such as union, division and intersection directly on hardware. These relations can be pipelined efficiently on a network of processors having an array configuration. These processors can be designed and implemented with a few simple cells. In order to determine the state-of-the-art in Electrically Reconfigurable Logic Array (ERLA), a survey of the available programmable logic array (PLA) and the logic circuit elements used in such arrays was conducted. Based on this survey some recommendations are made for ERLA devices.

Agarwal, R. K.↗
NASA NTRS2000

Effect of beta-ADrenergic Agonist on Cyclic AMP Synthesis in Chicken Skeletal Muscle Cells in Culture

Several beta-adrenergic receptor (bAR) agonists are known to cause hypertrophy of skeletal muscle tissue. Because it seems logical that these agonists exert their action on muscle through stimulation of cAMP synthesis, five bAR agonists encompassing a range in activity from strong to weak were evaluated for their ability to stimulate cAMP accumulation in embryonic chicken skeletal muscle cells in culture. Two strong agonists (epinephrine and isoproterenol), one moderate agonist (albuterol), and two weak agonists known to cause hypertrophy in animals (clenbuterol and cimaterol) were studied. Dose response curves were determined over six orders of magnitude in concentration for each agonist, and values were determined for their maximum stimulation of cAMP synthesis rate (Bmax) and the agonist concentration at which 50% stimulation of cAMP synthesis (EC50) occurred. Bmax values decreased in the following order: isoproterenol, epinephrine, albuterol, cimaterol, clenbuterol. Cimaterol and clenbuterol at their Bmax levels were approximately 15-fold weaker than isoproterenol in stimulating the rate of cAMP synthesis. In addition, the EC50 values for isoproterenol, cimaterol, clenbuterol, epinephrine, and albuterol were 360 nM, 630 nM, 900 nM, 2,470 nM, and 3,650 nM, respectively. Finally, dose response curves show that the concentrations of cimaterol and clenbuterol in culture media at concentrations known to cause significant muscle hypertrophy in animals had no detectable effect on stimulation of CAMP accumulation in chicken skeletal muscle cells.

Young, R. B.↗
NASA NTRS2016

An Evaluation of Flash Cells Used in Critical Applications

Due to the common use of Flash technology in many commercial and industrial Programmable Logic Devices (PLDs) such as FPGAs and mixed-signal microcontrollers, flash technology is being utilized in fuzed munition applications. This presents a long-term reliability issue for both DoD and NASA safety- and mission-critical applications. A thorough understanding of the data retention failure modes and statistics associated with Flash data retention is of vital concern to the fuze safety community. A key retention parameter for a flash cell is the threshold voltage (VTH), which is an indirect indicator of the amount of charge stored on the cells floating gate. Initial test results based on a study of charge loss in flash cells in an FPGA device is presented. Statistical data taken from a small sample set indicates quantifiable charge loss for devices stored at both room temperature and 150 C. Initial evaluation of the distribution of threshold voltage in a large sample set (800 devices) is presented. The magnitude of charge loss from exposure to electrostatic discharge and electromagnetic fields is measured and presented. Simulated data (and measured data as available) resultant from harsh-environment testing (neutron, heavy ion, EMP) is presented.

data retention↗
NASA NTRS2016

An Evaluation of Flash Cells Used in Critical Applications

Due to the common use of Flash technology in many commercial and industrial Programmable Logic Devices (PLDs) such as FPGAs and mixed-signal microcontrollers, flash technology is being utilized in fuzed munition applications. This presents a long-term reliability issue for both DoD and NASA safety- and mission-critical applications. A thorough understanding of the data retention failure modes and statistics associated with Flash data retention is of vital concern to the fuze safety community. A key retention parameter for a flash cell is the threshold voltage (VTH), which is an indirect indicator of the amount of charge stored on the cells floating gate. Initial test results based on a study of charge loss in flash cells in an FPGA device is presented. Statistical data taken from a small sample set indicates quantifiable charge loss for devices stored at both room temperature and 150 C. Initial evaluation of the distribution of threshold voltage in a large sample set (800 devices) is presented. The magnitude of charge loss from exposure to electrostatic discharge and electromagnetic fields is measured and presented. Simulated data (and measured data as available) resultant from harsh-environment testing (neutron, heavy ion, EMP) is presented.

Data Retention↗
NASA NTRS1969

Plasma-fluidic hybrid display

Fluidic logic elements to control firing and extinction of plasma matrix display system cells with constant electrical power supply

Hilborn, E. H.↗
NASA NTRS1977

Integrally regulated solar array demonstration using an Intel 8080 microprocessor

A concept for regulating the voltage of a solar array by using a microprocessor to effect discrete voltage changes was demonstrated. Eight shorting switches were employed to regulate a simulated array at set-point voltages between 10,000 and 15,000 volts. The demonstration showed that the microprocessor easily regulated the solar array output voltage independently of whether or not the switched cell groups were binary sized in voltage. In addition, the microprocessor provided logic memory capability to perform additional tasks such as locating and insolating a faulty switch.

Petrik, E. J.↗
NASA NTRS1979

The critical satellite technical issues of future pervasive broadband low-cost communication networks

The critical technical issues of signal waveform design, projected spacecraft technology, satellite launch options, and satellite cost are discussed for future pervasive broadband communication networks. With DPCM video signal encoding, 32 Mb/s user-to-user data rate per channel, 10% overhead, two orthogonal polarizations, and crosstalk loss limited to 1 dB, TFM permits about 75 channels/GHz of frequency allocation. The BOM (beginning of mission) weight and power of a baseline 400-channel multibeam satellite is about 1800 kg and 5000 W. Each 35 Mb/s channel can support 1 to 10 video channels. The weight and power estimates assume hardened digital logic, composite materials for a multibeam antenna structure, high-efficiency solar cells, batteries, and amplifiers. Based on a cost model for large communication satellites, the total space segment cost of two active satellites and one spare would be about $485 M.

Harvey, R. L.↗