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Results for “MAGNETIC SWITCHING”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
DOE OSTI2019

Low-Temperature Magnetization Switching of Bilayer FeNi/FeMn Films

A change in the kinetics of magnetization reversal of a bilayer ferromagnet–antiferromagnet film during a decrease in the temperature is experimentally detected. The motion of a zigzag domain wall is typical of high-temperature conditions, and the system undergoes magnetization reversal by irregular rotation at low temperatures. This phenomenon is found to occur only in a coupled system of layers with exchange anisotropy: it is absent when the antiferromagnetic layer is removed. The change in the character of magnetization reversal at low temperatures is related to the appearance of specific pinning of domain walls, which is caused by interface regions with a varying chirality of an interlayer exchange spring and a perpendicular magnetic anisotropy at interface steps.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Oxygen vacancy induced magnetization switching in Fe{sub 3}O{sub 4} epitaxial ultrathin films on GaAs(100)

The magnetic and transport properties of half metallic Fe{sub 3}O{sub 4}, which are sensitive to the stoichiometry, are the key issue for applications in spintronics. An anomalous enlargement of the saturation magnetic moment is found in a relatively thick sample of epitaxial Fe{sub 3}O{sub 4} film by post-growth oxidation method. The investigation of the thickness dependence of magnetic moment suggests that the enhanced magnetism moment may come from the existence of oxygen vacancies. First-principles calculations reveal that with oxygen vacancies in Fe{sub 3}O{sub 4} crystal the spin of Fe ions in the tetrahedron site near the vacancy is much easier to switch parallel to the Fe ions in the octahedron site by temperature disturbance, supported by the temperature dependence of magnetic moment of Fe{sub 3}O{sub 4} films in experiment.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Irreversible magnetization switching at the onset of superconductivity in a superconductor ferromagnet hybrid

We demonstrate that the magnetic state of a superconducting spin valve, that is normally controlled with an external magnetic field, can also be manipulated by varying the temperature which increases the functionality and flexibility of such structures as switching elements. In this case, switching is driven by changes in the magnetostatic energy due to spontaneous Meissner screening currents forming in the superconductor below the critical temperature. Our scanning Hall probe measurements also reveal vortex-mediated pinning of the ferromagnetic domain structure due to the pinning of quantized stray fields in the adjacent superconductor. The ability to use temperature as well as magnetic field to control the local magnetisation structure raises the prospect of potential applications in magnetic memory devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Microstructure tuning and magnetism switching of ferroelectric barium titanate

Single-crystal and polycrystal BaTiO{sub 3} (BTO) materials synthesized by the physical and chemical methods, respectively, have been studied based on microstructural characterizations and magnetic measurements. The results of X-ray diffraction and Raman scatting spectra show that a single crystal tetragonal to polycrystalline pseudo-cubic structure transformation occurs in BTO ferroelectrics, dependent of growth conditions and interface effects. High-resolution transmission electron microscope data indicate that the as-prepared BTO/SrTiO{sub 3} (001) and BTO/SrRuO{sub 3}/SrTiO{sub 3} (001) heterostructures are highly c-axis oriented with atomic sharp interfaces. Lattice defects (i.e., edge-type misfit dislocations and stacking faults) in the heterostructures could be identified clearly and showed tunable with the variations of interface strain. Furthermore, the effects of vacancy defects on magnetic properties of BTO are discussed, which shows a diamagnetism–ferromagnetism switching as intrinsic vacancies increase. This work opens up a possible avenue to prepare magnetic BTO ferroelectrics. - Highlights: • Structure of BTO is tunable, depending on growth conditions and interface strain. • STEM–EDX data indicate the presence of lattice defects in BTO ferroelectrics. • BTO magnetism could be controlled by defects showing dia-ferromagnetism switching. • BTO with more vacancies shows RTFM, as evidence of vacancy magnetism effects.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Magnetic switching in Weyl semimetal-superconductor heterostructures

Here, we present a switching mechanism that utilizes the proximity coupling between the surface spin texture of a Weyl semimetal and a superconductor in a Weyl semimetal-superconductor Weyl semimetal trilayer heterostructure. We show that the superconductivity in the middle layer can be fully suppressed by the surface spin texture of the Weyl semimetals in the presence of an external magnetic field, but it can be recovered again by only changing the field direction. The restoration of the middle-layer superconductivity indicates a sharp transition to a low-resistance state. This sharp switching effect, realizable using a Weyl semimetal because of its strong spin-momentum locking and surface spin polarization, is a promising avenue for novel superconducting spin-valve applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2013

Multi-jump magnetic switching in ion-beam sputtered amorphous Co{sub 20}Fe{sub 60}B{sub 20} thin films

Unconventional multi-jump magnetization reversal and significant in-plane uniaxial magnetic anisotropy (UMA) in the ion-beam sputtered amorphous Co{sub 20}Fe{sub 60}B{sub 20}(5–75 nm) thin films grown on Si/amorphous SiO{sub 2} are reported. While such multi-jump behavior is observed in CoFeB(10 nm) film when the magnetic field is applied at 10°–20° away from the easy-axis, the same is observed in CoFeB(12.5 nm) film when the magnetic field is 45°–55° away from easy-axis. Unlike the previous reports of multi-jump switching in epitaxial films, their observance in the present case of amorphous CoFeB is remarkable. This multi-jump switching is found to disappear when the films are crystallized by annealing at 420 °C. The deposition geometry and the energy of the sputtered species appear to intrinsically induce a kind of bond orientation anisotropy in the films, which leads to the UMA in the as-grown amorphous CoFeB films. Exploitation of such multi-jump switching in amorphous CoFeB thin films could be of technological significance because of their applications in spintronic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Ultrafast magnetization switching by spin-orbit torques

Spin-orbit torques induced by spin Hall and interfacial effects in heavy metal/ferromagnetic bilayers allow for a switching geometry based on in-plane current injection. Using this geometry, we demonstrate deterministic magnetization reversal by current pulses ranging from 180 ps to ms in Pt/Co/AlO{sub x} dots with lateral dimensions of 90 nm. We characterize the switching probability and critical current I{sub c} as a function of pulse length, amplitude, and external field. Our data evidence two distinct regimes: a short-time intrinsic regime, where I{sub c} scales linearly with the inverse of the pulse length, and a long-time thermally assisted regime, where I{sub c} varies weakly. Both regimes are consistent with magnetization reversal proceeding by nucleation and fast propagation of domains. We find that I{sub c} is a factor 3–4 smaller compared to a single domain model and that the incubation time is negligibly small, which is a hallmark feature of spin-orbit torques.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2023

Nonvolatile Magnetoelectric Switching of Magnetic Tunnel Junctions with Dipole Interaction

The magnetoelectric effect is technologically appealing because of its ability to manipulate magnetism using an electric field rather than magnetic field or current, thus providing a promising solution for the development of energy-efficient spintronics. Although 180° magnetization switching is vital to spintronic devices, the achievement of 180° magnetization switching via magnetoelectric coupling is still a fundamental challenge. Here, in this work, voltage-driven full resistance switching of a magnetic tunnel junction (MTJ) with dipole interaction on a ferroelectric substrate through switchable parallel/antiparallel magnetization alignment is demonstrated. Parallel magnetization alignment along the y direction is obtained under a bias magnetic field. By rotating the magnetic easy axis via strain-mediated magnetoelectric coupling, the parallel magnetizations in the MTJ reorient to the x axis with opposite paths because of dipole interaction, thus resulting in antiparallel alignment. Moreover, this voltage switching of MTJs is nonvolatile owing to variations in dipole interaction and can be well understood via phase field simulations. The results provide an avenue to realize electrical switching of MTJs and are significant for exploring energy-efficient spintronic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Optimization of magnetic switches for single particle and cell transport

The ability to manipulate an ensemble of single particles and cells is a key aim of lab-on-a-chip research; however, the control mechanisms must be optimized for minimal power consumption to enable future large-scale implementation. Recently, we demonstrated a matter transport platform, which uses overlaid patterns of magnetic films and metallic current lines to control magnetic particles and magnetic-nanoparticle-labeled cells; however, we have made no prior attempts to optimize the device geometry and power consumption. Here, we provide an optimization analysis of particle-switching devices based on stochastic variation in the particle's size and magnetic content. These results are immediately applicable to the design of robust, multiplexed platforms capable of transporting, sorting, and storing single cells in large arrays with low power and high efficiency.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1986

Magnetically-Switched, Long-Pulse XeCl Laser

Careful shaping of input pulses helps XeCl excimer laser produce lowdivergence, narrow-band light beam. Long-pulse laser achieves narrow-band output by multiple passes of beam through precisely adjusted Fabry-Perot etalons. Pulse-forming network and saturable-inductor switch enable fast pulse rise to peak voltage, followed by long residence at peak.

Pacala, T. J.↗
NASA NTRS1987

Magnetically switched power supply system for lasers

A laser power supply system is described in which separate pulses are utilized to avalanche ionize the gas within the laser and then produce a sustained discharge to cause the gas to emit light energy. A pulsed voltage source is used to charge a storage device such as a distributed capacitance. A transmission line or other suitable electrical conductor connects the storage device to the laser. A saturable inductor switch is coupled in the transmission line for containing the energy within the storage device until the voltage level across the storage device reaches a predetermined level, which level is less than that required to avalanche ionize the gas. An avalanche ionization pulse generating circuit is coupled to the laser for generating a high voltage pulse of sufficient amplitude to avalanche ionize the laser gas. Once the laser gas is avalanche ionized, the energy within the storage device is discharged through the saturable inductor switch into the laser to provide the sustained discharge. The avalanche ionization generating circuit may include a separate voltage source which is connected across the laser or may be in the form of a voltage multiplier circuit connected between the storage device and the laser.

Pacala, Thomas J.↗
DOE OSTI2015

Current-induced spin-orbit torque switching of perpendicularly magnetized Hf|CoFeB|MgO and Hf|CoFeB|TaO{sub x} structures

We study the effect of the oxide layer on current-induced perpendicular magnetization switching properties in Hf|CoFeB|MgO and Hf|CoFeB|TaO{sub x} tri-layers. The studied structures exhibit broken in-plane inversion symmetry due to a wedged CoFeB layer, resulting in a field-like spin-orbit torque (SOT), which can be quantified by a perpendicular (out-of-plane) effective magnetic field. A clear difference in the magnitude of this effective magnetic field (H{sub z}{sup FL}) was observed between these two structures. In particular, while the current-driven deterministic perpendicular magnetic switching was observed at zero magnetic bias field in Hf|CoFeB|MgO, an external magnetic field is necessary to switch the CoFeB layer deterministically in Hf|CoFeB|TaO{sub x}. Based on the experimental results, the SOT magnitude (H{sub z}{sup FL} per current density) in Hf|CoFeB|MgO (−14.12 Oe/10{sup 7} A cm{sup −2}) was found to be almost 13× larger than that in Hf|CoFeB|TaO{sub x} (−1.05 Oe/10{sup 7} A cm{sup −2}). The CoFeB thickness dependence of the magnetic switching behavior, and the resulting H{sub z}{sup FL} generated by in-plane currents are also investigated in this work.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗