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Results for “Memory”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
NASA NTRS1984

Measuring Workload Differences Between Short-term Memory and Long-term Memory Scenarios in a Simulated Flight Environment

Four highly experienced Air Force pilots each flew four simulated flight scenarios. Two scenarios required a great deal of aircraft maneuvering. The other two scenarios involved less maneuvering, but required remembering a number of items. All scenarios were designed to be equaly challenging. Pilot's Subjective Ratings for Activity-level, Complexity, Difficulty, Stress, and Workload were higher for the manuevering scenarios than the memory scenarios. At a moderate workload level, keeping the pilots active resulted in better aircraft control. When required to monitor and remember items, aircraft control tended to decrease. Pilots tended to weigh information about the spatial positioning and performance of their aircraft more heavily than other items.

Berg, S. L.↗
NASA NTRS2019

Ruggedness Evaluation of ASTM International Standard Test Methods for Shape Memory Materials: E3097 Standard Test Method for Mechanical Uniaxial Constant Force Thermal Cycling of Shape Memory Alloys

This paper evaluates the ruggedness testing of the newly released ASTM International E3097 Standard Test Method for Mechanical Uniaxial Constant Force Thermal Cycling of Shape Memory Alloys. The ruggedness experiment was designed with eight runs in two replicates, consisting of seven factors of strain rate (ė), heating and cooling rates (T(sub heat) and T(sub cool), respectively), upper and lower cycle temperatures (UCT and LCT, respectively), hold time (t(sub hold)), and minimum load (F(sub min)) imparted on the samples. The results indicate that the hold time factor had no effect on any result variable. The minimum load factor, alternatively, had the greatest effect on several result variables, with the greatest influence on the strains at martensite start and finish (strain variation ~0.1 percent), and the strains at the upper and lower cycle temperatures (strain variation of 0.14 percent). The UCT was found to have a large effect on the austenite and martensite finish tangent line and data intersect, denoted by A(sub f(sup *)) and M(sub f(sup*)), by ~17 and 4 °C, respectively. The testing methodology, analysis techniques, and resulting conclusions on the ruggedness of the test methods are presented.

Benafan, Othmane↗
DOE OSTI2022

Nanometer scale nonvolatile memory device and method for storing binary and quantum memory states

Example implementations include an electronic memory device with a metallic layer having a first planar crystalline structure, a first encapsulating layer including an encapsulating material having a second planar crystalline structure, and disposed adjacent to a first planar surface of the metallic layer, and a second encapsulating layer including the encapsulating material, and disposed adjacent to a second planar surface of the metallic layer. Example implementations also include a method of depositing graphite crystals onto a substrate to form a gate bottom layer, depositing BN crystals onto the graphite bottom layer to form a BN bottom layer, depositing tungsten ditelluride (WTe2) crystals onto the BN bottom layer to form a metallic layer, depositing the BN crystals onto the BN bottom layer and the metallic layer to form a BN top layer, and depositing the graphite crystals onto the BN top layer to form a gate top layer.

Xiao, Jun↗