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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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67 records · Page 4
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Al-rich AlGaN high electron mobility transistor gate metallization study up to 600 °C in air

Here we report a comparative study of three rectifying gate metals, W, Pd, and Pt/Au, on ultrawide bandgap Al 0.86 Ga 0.14 N barrier/Al 0.7 Ga 0.3 N channel high electron mobility transistors for use in extreme temperatures. The transistors were electrically characterized from 30 to 600 °C in air. Of the three gate metals, the Pt/Au stack exhibited the smallest change in threshold voltage (0.15 V, or 9% change between the 30 and 600 °C values, and a maximum change of 42%), the highest on/off current ratio (1.5 × 10 6 ) at 600 °C, and a modest forward gate leakage current (0.39 mA/mm for a 3,V gate bias) at 600 °C. These favorable results showcase AlGaN channel high electron mobility transistors' ability to operate in extreme temperature environments.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Reduced trap state density in AlGaN/GaN HEMTs with low-temperature CVD-grown BN gate dielectric

In this Letter, low-temperature (400 °C) chemical vapor deposition-grown boron nitride (BN) was investigated as the gate dielectric for AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors (MISHEMTs) on a Si substrate. Comprehensive characterizations using x-ray photoelectron spectroscopy, reflection electron energy loss spectroscopy, atomic force microscope, high-resolution transmission electron microscopy, and time-of-flight secondary ion mass spectrometry were conducted to analyze the deposited BN dielectric. Compared with conventional Schottky-gate HEMTs, the MISHEMTs exhibited significantly enhanced performance with 3 orders of magnitude lower reverse gate leakage current, a lower off-state current of 1 × 10−7 mA/mm, a higher on/off current ratio of 108, and lower on-resistance of 5.40 Ω mm. The frequency-dependent conductance measurement was performed to analyze the BN/HEMT interface, unveiling a low interface trap state density (Dit) on the order of 5 × 1011–6 × 1011 cm−2 eV−1. This work shows the effectiveness of low-temperature BN dielectrics and their potential for advancing GaN MISHEMTs toward high-performance power and RF electronics applications.

Physics↗
DOE OSTI2025

Thermally induced PtOx interfacial layer enhances stability of Pt/β-Ga2O3 vertical Schottky diodes

This study investigates the long-term stability of Pt/β-Ga2O3 field-plated Schottky barrier diodes at high temperatures, with extended thermal cycling and soaking stress. The device characteristics reveal a strong dependence on operating temperature, leading to an ON/OFF current ratio of ∼10× at ±3 V and 600 °C. Extensive thermal cycling (25 cycles over 100 h) between room temperature and 350 °C shows that leakage currents stabilize after the initial ten cycles. This stabilization is likely due to the formation of a thin PtOx layer at the Pt/β-Ga2O3 interface, as confirmed by high-resolution scanning transmission electron microscopy. Further exposure to a constant 350 °C environment for 10 h reveals a slight increase in the leakage current from 10−7 to 10−6 A at −5 V and degradation of the forward current, due to potential thermodynamic instability of the Ohmic contacts. This study provides insights into the changes in the Pt/β-Ga2O3 diode performance with thermal stress, offering a basis for predicting the device’s operational reliability at high temperatures for sensing and power applications.

08 HYDROGEN↗
DOE OSTI2023

High-performance HZO/InAlN/GaN MISHEMTs for Ka-band application

This paper reports on the demonstration of microwave power performance at 30 GHz on InAlN/GaN metal–insulator–semiconductor high electron mobility transistor (MISHEMT) on silicon substrate by using the Hf 0.5 Zr 0.5 O 2 (HZO) as a gate dielectric. Compared with Schottky gate HEMT, the MISHEMT with a gate length (L G ) of 50 nm presents a significantly enhanced performance with an ON/OFF current ratio (I ON /I OFF ) of 9.3 × 10 7 , a subthreshold swing of 130 mV dec -1 , a low drain-induced barrier lowing of 45 mV V -1 , and a breakdown voltage of 35 V. RF characterizations reveal a current gain cutoff frequency (f T ) of 155 GHz and a maximum oscillation frequency (f max ) of 250 GHz, resulting in high (f T × f max ) 1/2 of 197 GHz and the record high Johnson's figure-of-merit (JFOM = f T × BV) of 5.4 THz V among the reported GaN MISHEMTs on Si. Further, the power performance at 30 GHz exhibits a maximum output power of 1.36 W mm -1 , a maximum power gain of 12.3 dB, and a peak power-added efficiency of 21%, demonstrating the great potential of HZO/InAlN/GaN MISHEMTs for the Ka-band application.

42 ENGINEERING↗
DOE OSTI2023

Towards Low-Temperature CVD Synthesis and Characterization of Mono- or Few-Layer Molybdenum Disulfide

Molybdenum disulfide (MoS 2 ) transistors are a promising alternative for the semiconductor industry due to their large on/off current ratio (>10 10 ), immunity to short-channel effects, and unique switching characteristics. MoS 2 has drawn considerable interest due to its intriguing electrical, optical, sensing, and catalytic properties. Monolayer MoS 2 is a semiconducting material with a direct band gap of ~1.9 eV, which can be tuned. Commercially, the aim of synthesizing a novel material is to grow high-quality samples over a large area and at a low cost. Although chemical vapor deposition (CVD) growth techniques are associated with a low-cost pathway and large-area material growth, a drawback concerns meeting the high crystalline quality required for nanoelectronic and optoelectronic applications. This research presents a lower-temperature CVD for the repeatable synthesis of large-size mono- or few-layer MoS 2 using the direct vapor phase sulfurization of MoO 3 . The samples grown on Si/SiO 2 substrates demonstrate a uniform single-crystalline quality in Raman spectroscopy, photoluminescence (PL), scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), and scanning transmission electron microscopy. These characterization techniques were targeted to confirm the uniform thickness, stoichiometry, and lattice spacing of the MoS 2 layers. The MoS 2 crystals were deposited over the entire surface of the sample substrate. With a detailed discussion of the CVD setup and an explanation of the process parameters that influence nucleation and growth, this work opens a new platform for the repeatable synthesis of highly crystalline mono- or few-layer MoS 2 suitable for optoelectronic application.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Decarbonization of the Electric Power Sector and Implications for Low-Cost Hydrogen Production from Water Electrolysis

Increasing development of wind and solar generation in the power sector can create economic opportunities for the deployment of water electrolyzers that produce hydrogen. Temporal variation in the marginal cost of energy in future decarbonized grids can make it favorable for electrolyzers to dispatchably ramp hydrogen production up and down in response to low- and high-cost times. Using this strategy, low-cost hydrogen production is enabled by electrolyzers that are low-capital cost and tolerant to frequent on/off cycling. Ramping down hydrogen production to a designated turndown ratio can avoid performance degradation caused by on/off cycling by not shutting the electrolyzer completely off. This comes with a slight cost penalty which can be minimized if the turndown ratio is low (i.e., the system ramps down hydrogen production to close to zero). These results suggest that electrolyzers integrated into future power systems are likely to benefit from the ability to ramp operation up and down quickly and operate in a standby mode. This analysis forms a basis for comparative tradeoffs between electrolyzer capital cost, operating strategy, and system durability and demonstrates the importance of considering all three factors in technoeconomic analysis.

capital cost↗
DOE OSTI2024

Ballistic Frenkel-exciton gate with a high on-off ratio

Here it is shown that the exciton interactions within organic dye aggregates, as modeled by the Frenkel Hamiltonian, enable the construction of an on/off switchable exciton gate. In this construction, a single exciton residing on a controlling gate molecule may pass or inhibit the ballistic propagation of an exciton in a proximal gate channel consisting of an array of dye molecules. High on-off ratios in excess of 102 can be achieved through the use of static difference dipole-dipole interactions between the gate and the gate channel which effectively creates a switchable Bragg grating. The gate channel and controlling gate molecule exhibit entanglement with the quantum mechanical superposition of the presence and absence of exciton occupation on the gate molecule.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2023

Performance assessment of active insulation systems in residential buildings for energy savings and peak demand reduction

Active insulation systems (AISs) in buildings are envelopes that integrate thermal insulation, thermal energy storage, and controls. Although different designs for AISs have been proposed in the literature, a comprehensive analysis of feasible AISs is lacking. This paper discusses the energy performance, peak demand reduction potential, and performance characteristics of an AIS that uses a concrete wall as thermal mass sandwiched between two solid-state thermal switches (STSs). These STSs change their thermal conductivity using an on/off metal switch to create or break a thermal bridge across the STS. This paper first describes the experimental setup, used to determine the ratio of thermal resistance during R-high (low thermal conductivity) and R-low (high thermal conductivity) states of the STSs. This ratio was then used in whole-building energy simulations to evaluate the performance of AIS walls across different climate zones with/without a freeze timer of 60 min. The timer was added to reduce the number of switches of STSs from one state to another, and hence the energy needed for these switches. Analysis of the switching frequency and interval of STSs, thermal conductivity of walls, impact of wall orientation, and heat transfer through the wall from the use of AIS at different climate zones/locations were performed. The simulation results show that the AIS can achieve energy savings ranging from ~980 to 2,290 kWh in a single-family home with a floor area of ~220 m 2 compared with an IECC 2018 baseline. We found the energy savings was higher in dry climate zones which represent 17% of residential buildings in the United States, compared to humid or marine climate.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2024

ARPA-E Grid Optimization (GO) Competition Challenge 2

The ARPA-E Grid Optimization (GO) Competition Challenge 2, from 2020 to 2021, expanded upon the problem posed in Challenge 1 by adding adjustable transformer tap ratios, phase shifting transformers, switchable shunts, price-responsive demand, ramp rate constrained generators and loads, and fast-start unit commitment. Furthermore, Challenge 2 was a maximization problem while Challenge 1 was a minimization problem. Specifically, the economic surplus, defined as the benefit of serving load minus the cost of generation, is being maximized. It was expected that the objective value of a given solution should be positive, representing economic gain, but negative objectives from poor solutions were possible. The two code submission feature of Challenge 1 was maintained. Additionally, Divisions 3 and 4 within the competition permitted on/off switching of transmission lines (Divisions 1 and 2 did not). After the initial release of the Problem Formulation on 7/20/2020, ARPA-E Director Lane Genatowski announced Challenge 2 on 9/12/2020. The final May 31, 2021, version of the Problem Formulation was 97 pages long with 299 equations. The Challenge proceeded with 2 non-prize Events and 2 prize Events. Teams receiving Challenge 1 FOA awards and prize money were required to use the prize money to fund their Challenge 2 efforts (Georgia Institute of Technology, Global Optimal Technology, Inc., Lawrence Livermore National Laboratory, Lehigh University, Northwestern University, Artelys, Columbia, Pearl Street Technologies, Pennsylvania State University, and University of Colorado Boulder). For more information on the competition and challenge 2 see the "GO Competition Challenge 2 Information" resource below. Challenge 1 and Challenge 3 information can be found in the resources linked below.

ACOPF↗
DOE OSTI2026

Pulsed radio frequency power modulation for profile control in cryogenic reactive ion etching of silicon gratings

Cryogenic silicon etching with SF 6 /O 2 plasmas enables vertical sidewalls and smooth surfaces for high–aspect-ratio structures, yet precise control of etched profiles (sidewall angle, lateral etching, and linewidth retention) remains challenging under continuous-wave excitation due to coupling among radical fluxes, ion energy distributions, and in situ passivation dynamics. In this work, we investigated pulsed radio frequency bias delivery as a process knob for profile control during cryogenic silicon etching. Systematic experiments on 500 nm-wide, 1 μm-pitch gratings etched to 0.8–1.1 μm depth at 0.5–2 kHz pulsing frequency and 25%–75% duty cycle revealed strong dependencies of etch rate, linewidth, and sidewall angle on modulation conditions. We proposed a conceptual kinetic picture combined with feature-scale electrostatic analysis to understand the alternation of ion-driven etching and passivation recovery between on/off segments and local electric field shaping and modulation of ion trajectories within the trench. Moderate duty cycles (50%–75%) near 1 kHz achieved a balance between anisotropy and etch rate. These results demonstrate pulsed-bias modulation can be utilized to tune directionality and sidewall preservation in cryogenic SF 6 /O 2 etching, which are relevant to photonic, metrology, and quantum device fabrication.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Combustion of metal powder with dinitrogen tetroxide

In this work, we present analysis of a novel reactive material system that employs dinitrogen tetroxide (N 2 O 4 ) as a liquid oxidizer with metal powder fuels. The oxidizer was added to micron scale aluminum and zirconium powders by a remote injection system. When ignited with a high voltage spark, the mixtures were observed to possess reactivity comparable to nanocomposite reactive materials, with open-tube flame expansion velocities from 500 to 1400 m/s depending on fuel/oxidizer ratio and tube diameter. Temperatures were observed to range from 3000 to 3500 K as measured with gray body fits to 16-channel time-resolved pyrometer and time-integrated spectrometer data. These values were significantly below calculated adiabatic flame temperatures, which we attribute to local deviations from stoichiometry and kinetic/energetic limitations similar to those observed in studies of particles burning in high pressures gaseous oxidizers. Al/N 2 O 4 reactivity was found to be most likely limited by the vaporization of the metal from the particle surface and Zr/N 2 O 4 was limited by slower burning and complex interactions involving the solubility of nitrogen and oxygen in the molten Zr. We also discuss the potential for these materials to be used to create an “on/off” reactive material, since N2O4 can be added remotely and driven to evaporate via vacuum or purge of inert gases to return it to a safe condition.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Cost-Optimized Cold Climate Heat Pump Development and Field Test

Cold climate heat pumps (CCHPs) expand the heat pump market to climates where heating demand is dominant. They can achieve more than 70% energy savings compared with electric resistance heating and operate at lower cost than using tank-stored propane to fuel a furnace. A high-efficiency heat pump with a heating seasonal performance factor (HSPF)—as defined by the Air-Conditioning, Heating, and Refrigeration Institute (AHRI 2008)—greater than 10.0 would be more efficient than gas heating in terms of source energy. However, developing a cost-effective CCHP involves some challenges. A typical single-speed, air-source heat pump (ASHP) with an HSPF of 7.7 Btu/Wh does not work well under cold outdoor temperature conditions typical of cold climate locations for four major reasons: 1. Discharge temperature is too high—The low suction pressure and high compression pressure ratio at low ambient temperatures causes high compressor discharge temperatures in excess of the maximum limit for many of the compressors on the market. Furthermore, system charge of a heat pump is usually optimized in the cooling mode, which leads to overcharge conditions in the heating mode, further increasing the discharge temperature. 2. Heating capacity is insufficient if sized to meet the building design cooling load— Heating capacity of a single-speed heat pump decreases with ambient temperature. The heating capacity at -13°F (-25°C) typically decreases to 20%–40% of the rated heating capacity at 47°F (8.3°C) (~equivalent to the rated cooling capacity at 95°F [35°C]). Therefore, a single-speed heat pump, typically sized to match the building design cooling load, cannot provide adequate heating capacity to match the building heating load at low ambient temperatures. The capacity deficit is filled by inefficient resistance heat, thus lowering the system efficiency and significantly increasing power demand. 3. Cyclic loss is significant if sized to meet the building design heating load—If a single-speed heat pump is sized to meet the heating load, it will be significantly oversized relative to the cooling load in many cold climates. This will cause excessive on/off cyclic loss during the cooling and heating operations at moderately low ambient temperatures. Thus, capacity modulation capability (e.g., using a variable-speed or multi-stage compressor) is necessary for a CCHP, which uses its full capacity to meet the peak heating load and partial capacity to meet the cooling and part-load heating loads. 4. Coefficient of performance (COP) is low—Heating COP degrades significantly at low ambient temperatures owing to the large temperature difference between the heat source and sink. A target CCHP should be sized to meet the building design heating load while minimizing the cyclic loss for the cooling and heating operations at moderate ambient temperatures.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗