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At least 73 records · Page 4

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NASA NTRS1982

Adsorption of humic acids and trace metals in natural waters

Studies concerning the interactions between suspended hydrous iron oxide and dissolved humic acids and trace metals are reported. As a major component of dissolved organic matters and its readiness for adsorption at the solid/water interface, humic acids may play a very important role in the organometallic geochemistry of suspended sediments and in determining the fate and distribution of trace metals, pesticides and anions in natural water systems. Most of the solid phases in natural waters contain oxides and hydroxides. The most simple promising theory to describe the interactions of hydrous iron oxide interface is the surface complex formation model. In this model, the adsorptions of humic acids on hydrous iron oxide may be interpreted as complex formation of the organic bases (humic acid oxyanions) with surface Fe ions. Measurements on adsorptions were made in both fresh water and seawater. Attempts have been made to fit our data to Langmuir adsorption isotherm. Adsorption equilibrium constants were determined.

Leung, W. H.↗

NASA NTRS1983

Cobalt ion-containing epoxies

Varying concentrations of an organometallic cobalt complex were added to an epoxy system currently used by the aerospace industry as a composite matrix resin. Methods for combining cobalt (III) acetylacetonate with a tetraglycidyl 4,4 prime - diaminodiphenylmethane-based epoxy were investigated. The effects of increasing cobalt ion concentration on the epoxy cure were demonstrated by epoxy gel times and differential scanning calorimetry cure exotherms. Analysis on cured cobalt-containing epoxy castings included determination of glass transition temperatures by thermomechanical analysis, thermooxidative stabilities by thermogravimetric analysis, and densities in a density gradient column. Flexural strength and stiffness were also measured on the neat resin castings.

Stoakley, D. M.↗

NASA NTRS1983

Laser assisted deposition

Applications of laser-based processing techniques to solar cell metallization are discussed. Laser-assisted thermal or photolytic maskless deposition from organometallic vapors or solutions may provide a viable alternative to photovoltaic metallization systems currently in use. High power, defocused excimer lasers may be used in conjunction with masks as an alternative to direct laser writing to provide higher throughput. Repeated pulsing with excimer lasers may eliminate the need for secondary plating techniques for metal film buildup. A comparison between the thermal and photochemical deposition processes is made.

Dutta, S.↗

NASA NTRS1984

Development of GaAs/Si and GaAs/Si monolithic structures for future space solar cells

The results of heteroepitaxial growth of GaAs and GaAlAs directly on Si are presented, and applications to new cell structures are suggested. The novel feature is the elimination of a Ge lattice transition region. This feature not only reduces the cost of substrate preparation, but also makes possible the fabrication of high efficiency monolithic cascade structures. All films to be discussed were grown by organometallic chemical vapor deposition at atmospheric pressure. This process yielded reproducible, large-area films of GaAs, grown directly on Si, that are tightly adherent and smooth, and are characterized by a defect density of 5 x 10(6) power/sq cm. Preliminary studies indicate that GaAlAs can also be grown in this way. A number of promising applications are suggested. Certainly these substrates are ideal for low-weight GaAs space solar ells. For very high efficiency, the absence of Ge makes the technology attractive for GaAlAs/Si monolithic cascades, in which the Si substrates would first be provided with a suitable p/n junction. An evaluation of a three bandgap cascade consisting of appropriately designed GaAlAs/GaAs/Si layers is also presented.

Spitzer, M. B.↗

NASA NTRS1984

Process research of non-CZ silicon material

Advanced processing techniques for non-CZ silicon sheet material that might improve the cost effectiveness of photovoltaic module production were investigated. Specifically, the simultaneous diffusion of liquid boron and liquid phosphorus organometallic precursors into n-type dendritic silicon web was examined. The simultaneous junction formation method for solar cells was compared with the sequential junction formation method. The electrical resistivity of the n-n and p-n junctions was discussed. Further research activities for this program along with a program documentation schedule are given.

Campbell, R. B.↗

NASA NTRS1984

Efficient AlGaAs shallow-homojunction solar cells

Shallow-homojunction n+/p/p+ solar cells with one-sun, AM1 conversion efficiencies as high as 12.9 percent have been fabricated in Al0.2Ga0.8As epitaxial layers grown by organometallic chemical vapor deposition on single-crystal GaAs substrates. For these cells, which have n+ layers thinned by anodic oxidation to about 500 A, the quantum efficiencies in the short-wavelength portion of the spectrum are as high as the best reported for AlGaAs cells with high band-gap window layers.

Gale, R. P.↗

NASA NTRS1984

Growth of InSb and InAs(1-x)Sb(x) by OM-CVD

Organometallic chemical vapor deposition (OM-CVD) growth of InSb and InAs(1-x)Sb(x) has been obtained using triethylindium (TEI), trimethylantimony (TMS), and arsine (AsH3) on (100) GaAs, (100) InSb, and (111)-B InSb substrates. InSb with excellent morphology was achieved on both (100) InSb and (111)-B InSb substrates. The measured electron mobility at 300 K of undoped InSb grown on (100) GaAs semi-insulating substrates was 40,000 sq cm/V-s at a carrier concentration of ND-NA = 2.0 x 10 to the 16th per cu cm. Carrier concentration of ND-NA = 1.2 x 10 to the 15th per cu cm has been measured at 77 K. InAs(1-x)Sb(x) (x = 0.07-0.75) with mirror-like surfaces have been grown on (100) InSb and InAs substrates. This composition range of x between 0.55 and 0.75 (Eg = 0.1 eV) has been successfully achieved for the first time. Solid composition variations as a function of growth temperature and InSb substrate orientations are also discussed.

Chiang, P. K.↗

NASA NTRS1987

Ceramic matrix and resin matrix composites: A comparison

The underlying theory of continuous fiber reinforcement of ceramic matrix and resin matrix composites, their fabrication, microstructure, physical and mechanical properties are contrasted. The growing use of organometallic polymers as precursors to ceramic matrices is discussed as a means of providing low temperature processing capability without the fiber degradation encountered with more conventional ceramic processing techniques. Examples of ceramic matrix composites derived from particulate-filled, high char yield polymers and silsesquioxane precursors are provided.

Hurwitz, Frances I.↗

NASA NTRS1987

Recent developments in indium phosphide space solar cell research

Recent developments and progress in indium phosphide solar cell research for space application are reviewed. Indium phosphide homojunction cells were fabricated in both the n+p and p+n configurations with total area efficiencies of 17.9 and 15.9% (air mass 0 and 25 C) respectively. Organometallic chemical vapor deposition, liquid phase epitaxy, ion implantation and diffusion techniques were employed in InP cell fabrication. A theoretical model of a radiation tolerant, high efficiency homojunction cell was developed. A realistically attainable AMO efficiency of 20.5% was calculated using this model with emitter and base doping of 6 x 10 to the 17th power and 5 x 10 the the 16th power/cu cm respectively. Cells of both configurations were irradiated with 1 MeV electrons and 37 MeV protons. For both proton and electron irradiation, the n+p cells are more radiation resistant at higher fluences than the p+n cells. The first flight module of four InP cells was assembled for the Living Plume Shield III satellite.

Brinker, David J.↗

NASA NTRS1985

High-efficiency double-heterostructure AlGaAs/GaAs solar cells

Double-heterostructure solar cells have been fabricated from wafers prepared by using organometallic chemical vapor deposition to grow a p GaAs absorbing layer sandwiched between p(+) and n(+) AlGaAs layers. The best cell, which incorporates an abrupt AlGaAs/GaAs shallow heterojunction, exhibits a global AM1 one-sun conversion efficiency of 23 percent. The rate at which the open-circuit voltage decreases with increasing temperature is lower for the double-heterostructure cells than for GaAs shallow-homojunction cells.

Gale, R. P.↗

NASA NTRS1987

An ab initio study on (C5H5V)2C8H8

The bonding in the organometalic compound nu-(eta exp 5-(cyclooctatetraene) bis (eta exp 2 cyclopentadienyl) vanadium) involves a complex mixture of metal-metal and metal-ligand contributions. Although there is a direct V-V 3d interaction it is not as strong as a double bond with some triple bond character as has been suggested based upon experiment. The balance between metal-metal and metal-ligand bonding results in the appearance of a low-lying triplet state which retains the V-V 3d bonding. A small singlet-triplet separation is consistent with the change in magnetic properties with temperature.

Luthi, Hans P.↗

NASA NTRS1987

Recent developments in indium phosphide space solar cell research

Recent developments and progress in indium phosphide solar cell research for space application are reviewed. Indium phosphide homojunction cells were fabricated in both the n + p and p + n configurations with total area efficiencies of 17.9 and 15.9 percent (air mass 0 and 25 C) respectively. Organometallic chemical vapor deposition, liquid phase epitaxy, ion implantation and diffusion techniques were employed in InP cell fabrication. A theoretical model of a radiation tolerant, high efficiency homojunction cell was developed. A realistically attainable AM0 efficiency of 20.5 percent was calculated using this model with emitter and base doping of 6 x 10 to the 17th power and 5 x 10 to the 16th power/cu cm, respectively. Cells of both configurations were irradiated with 1 MeV electrons and 37 MeV protons. For both proton and electron irradiation, the n + p cells are more radiation resistant at higher fluences than the p + n cells. The first flight module of four InP cells was assembled for the Living Plume Shield III satellite.

Brinker, David J.↗

NASA NTRS1987

Ceramic matrix and resin matrix composites - A comparison

Hurwitz, Frances I.↗

NASA NTRS1988

Temperature stability of Al(x)Ga(1-x)As (x = 0-1) thermal oxide masks for selective-area epitaxy

The use of thermal oxides of Al(x)Ga(1-x)As (x = 0-1) as masking materials for selective-area epitaxy by a organometallic chemical-vapor deposition has been investigated. It was found that the thermal oxide of GaAs is only applicable for low growth temperatures (less than or equal to 600 C), and the addition of aluminum significantly improves the thermal stability of the oxide. The oxide of Al(0.4)Ga(0.6)As is suitable for high-temperature deposition, but there are criteria for the thickness and oxidation temperature. Thin layers of AlAs oxidized at 475 C are excellent masks and allow precise thickness control. Promising results of selective-area deposition using these aluminum oxide masks have been obtained. High-quality single crystal grew in mask openings uniformly surrounded by dense and fine-grain polycrystalline deposits, producing a planar duplication of the original pattern.

Jones, Stephen H.↗

NASA NTRS1989

BIN Diode For Submillimeter Wavelengths

Diode formed by selective doping during epitaxial growth, starting with semi-insulating substrate. Use of high-mobility semiconductors like GaAs extends cutoff frequency. Either molecular-beam epitaxy (MBE) or organometallic chemical-vapor deposition used to form layers of diode. Planar growth process permits subsequent fabrication of arrays of diodes by standard photolithographic techniques, to achieve quasi-optical coupling of submillimeter radiation. Useful for generation of harmonics or heterodyne mixing in receivers for atmospheric and space spectroscopy operating at millimeter and submillimeter wavelengths. Used as frequency doublers or triplers, diodes of new type extend frequency range of present solid-state oscillators.

Maserjian, J.↗

NASA NTRS1989

Laser-Assisted Growth Of AlGaAs Films

Films of aluminum gallium arsenide grown on gallium arsenide by laser-assisted organometallic chemical-vapor deposition. Films single-crystal and contain no detectable oxygen or carbon. Laser beam impinges on substrate in quartz reaction chamber surrounded by radio-frequency induction coils. Film grows much more rapidly at 500 degree C than 450 degree C. Slight amount of interfacial oxygen detectable in film deposited at lower temperature.

Warner, Joseph D.↗

NASA NTRS1989

The GaAs solar cells with V-grooved emitters

Geometrically structured surfaces have become increasingly important to solar cell efficiency improvements and radiation tolerance. Gallium arsenide solar cells with a V-grooved front surface which demonstrate improved optical coupling and higher short-circuit current compared to planar cells were fabricated. GaAs homojunction cells were fabricated by organometallic chemical vapor deposition (OMCVD) on an n+ substrate. The V-grooves were formed on the surface with an anisotropic etch, and an n-type buffer and p-type emitter were grown by OMCVD, followed by ohmic contacts. Reflectivity measurements show significantly lower reflectance for the microgrooved cell compared to the planar structure. The short circuit current of the V-grooved solar cell is consistently higher than that of the planar controls.

Bailey, Sheila G.↗

NASA NTRS1989

Comments on containerless bulk crystal growth and epitaxy in space and on their implications regarding non-contact temperature measurements

Containerless methods are sought for bulk crystal growth and epitaxy which thus far are a less visible component of materials science in space efforts. In the opinion of the author, this is an anomaly which ought to be corrected, because container interactions are a major problem in earth bound materials processing, including crystal growth, and can be avoided or at least significantly reduced in space. The space environment is unique in solving some of these problems, e.g., memory effects in the integration of different classes of materials in high resolution multilayer heterostructures by molecular beam epitaxy or organometallic molecular beam epitaxy. Spectroscopic method of noncontact temperature measurements exist that could be developed in this context. The error in the absolute temperature measurement achieved by these techniques decreases with decreasing substrate temperature and supplements pyrometric measurements that are better suited for high temperature measurements.

Bachmann, Klaus J.↗