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Results for “P-N JUNCTION”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
NASA NTRS1972

Development of a (Hg, Cd)Te photodiode detector, Phase 2

High speed sensitive (Hg,Cd)Te photodiode detectors operating in the 77 to 90 K temperature range have been developed for the 10.6 micron spectral region. P-N junctions formed by impurity (gold) diffusion in p-type (Hg, Cd) Te have been investigated. It is shown that the bandwidth and quantum efficiency of a diode are a constant for a fixed ratio of mobility/lifetime ratio of minority carriers. The minority carrier mobility and lifetime uniquely determine the bandwidth and quantum efficiency and indicate the shallow n on p (Hg,Cd) Te diodes are preferable as high performance, high frequency devices.

Source record↗
NASA NTRS1975

Laser-to-electricity energy converter for short wavelengths

Short-wavelength energy converter can be made using Schottky barrier structure. It has wider band gap than p-n junction silicon semiconductors, and thus it has improved response at wavelengths down to and including ultraviolet region.

Stirn, R. J.↗
NASA NTRS1974

Inversion layer solar cell fabrication and evaluation

Inversion layer solar cells have been fabricated by etching through the diffused layer on p-type silicon wafers in a comb-like contact pattern. The charge separation comes from an induced p-n junction at the surface. This inverted surface is caused by a layer of transparent material applied to the surface that either contains free positive ions or that creates donor states at the interface. Cells have increased from 3 ma Isc to 100 ma by application of sodium silicate. The action is unstable, however, and decays with time.

Call, R. L.↗
NASA NTRS1974

Inversion layer solar cell fabrication and evaluation

Inversion layer solar cells were fabricated by etching through the diffused layer on p-type silicon wafers in a comb-like contact pattern. The charge separation comes from an induced p-n junction at the surface. The inverted surface is caused by a layer of transparent material applied to the surface that either contains free positive ions or that creates donor states at the interface. Cells are increased from 3 ma I sub sc to 100 ma by application of sodium silicate. The action is unstable, however, and decays. Non-mesa contaminated oxide cells were fabricated with short circuit currents of over 100 ma measured in the sun. Cells of this type have demonstrated stability.

Call, R. L.↗
NASA NTRS1974

High voltage power Schottky diodes

Calculations of the low frequency rectification efficiency of power Schottky diodes show that silicon Schottky rectifiers have lower losses than silicon p-n junctions for all voltage applications up to approximately 150 volts. These calculations are presented. Large area Schottky diodes have been fabricated which exhibit near ideal reverse leakage at 100 C out to approximately 100 volts and which have current capability of 100 A. Fabrication details and performance data are presented.

Cordes, L. F.↗
NASA NTRS1975

Low cost silicon solar arrays

The economic production of silicon solar cell arrays circumvents p-n junction degradation by nuclear doping, in which the Si-30 transmutes to P-31 after thermal neutron capture. Also considered are chemical purity specifications for improved silicon bulk states, surface induced states, and surface states.

Goldsmith, J. V.↗
NASA NTRS1975

Studies of heteroface solar cell performance

The development, fabrication, and failure modes of AlxGa(1-x)As-GaAs heteroface solar cells are described. Crystal growth, the diffusion of Zn into the GaAs layer to form the p-n junction, SEM studies of the diffusion length of GaAs, and procedures for making ohmic contacts are discussed.

Feucht, D. L.↗
NASA NTRS1975

Development and fabrication of improved Schottky power diodes

Reproducible methods for the fabrication of silicon Schottky diodes have been developed for tungsten, aluminum, conventional platinum silicide, and low temperature platinum silicide. Barrier heights and barrier lowering under reverse bias have been measured, permitting the accurate prediction of forward and reverse diode characteristics. Processing procedures have been developed that permit the fabrication of large area (about 1 sq cm) mesageometry power Schottky diodes with forward and reverse characteristics that approach theoretical values. A theoretical analysis of the operation of bridge rectifier circuits has been performed, which indicates the ranges of frequency and voltage for which Schottky rectifiers are preferred to p-n junctions. Power Schottky rectifiers have been fabricated and tested for voltage ratings up to 140 volts.

Cordes, L. F.↗
NASA NTRS1975

Ion implanted photodiode detectors in epitaxial /Ga/x/In/1-x//As

Ion implanted p-n junction photodiodes in epitaxially grown (Ga(x)In(1-x))As material are reported on here. Photoresponse in these diodes was investigated for approximately the entire composition range of x between zero and one. High values for quantum efficiency were obtained for the devices with a high value of x.

Ajmera, P. K.↗
NASA NTRS1965

GaAs-Si photon-activated switch.

Light activated low level switch consisting of electroluminescent GaAs p-n diode and double emitter silicon transistor

SWITCHING ELEMENT↗