Dc-biased photoconductive detection of wideband carbon dioxide laser signals
Direct current biased photoconductive detectors for reception of wideband carbon dioxide laser signals
Mc Elroy, J. H.↗
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Radiation-induced photoconductivity of silicon.
Defect photoconductivity in irradiated silicon arising from energy band dominated by single defect energy levels
Corelli, J. C.↗
Photoconductivity - An instructive exercise in semiconductor theory.
Photoconductivity defined, discussing applications to IR detection and energy band structure and impurity levels in germanium
Mcelroy, J. H.↗
Photoconductivity studies of defects in silicon - Divacancy-associated energy levels.
Divacancy associated energy levels in electron irradiated n-type Si identified by photoconductivity study employing uniaxial stress induced reorientation and polarized light
Corelli, J. C.↗
The photoconductive layer of AVCS-APT vidicon tubes
Analyses of compositional variations in photoconductive layers of vidicon tube
Park, J. J.↗
Performance of broad-band microwave-biased extrinsic photoconductive detectors at 10.6 microns
Extrinsic photoconductive detectors, comparing performance for microwave and DC bias based on gain bandwidth product and SNR analysis
Sun, C.↗
Study of radiation effects in lithium-doped Si using infrared spectroscopy /1 to 50 microns/ and photoconductivity /1 to 10 microns/
Infrared spectroscopic and photoconductivity determinations of electron irradiation effects in Li-doped floating zone and crucible grown silicon
Corelli, J. C.↗
Photoconductive and optical properties of amorphous selenium
Electron and hole drift mobilities in photoconducting amorphous selenium
Woollam, J. A.↗
Two-color photoconductive detectors
Two color sandwiched photoconductive mercury-cadmium-telluride far infrared detectors
Reynolds, J. W.↗
Radiation-induced extrinsic photoconductivity in Li-doped Si.
Investigation of the effects of lithium on radiation-produced complexes having long-time stability by examining the localized energy levels in the forbidden gap which give rise to extrinsic photoconductivity. The levels are found to disappear and in some cases shift with annealing in the 100-450 C temperature range. Due to the complexity of the system and the present lack of adequate theory, no complete analysis of the data obtained could be made.
Fenimore, E.↗
Photoconductivity of high-voltage space insulating materials
The dark and photoconductivities of four high voltage spacecraft insulators, Kapton-H, FEP Teflon, Parylene, and fused quartz, were studied under a variety of conditions intended to simulate a space environment. All measurements were made in a vacuum of less than .00001 torr while the temperature was varied from 22 C to 100 C. Some of the samples used employed conventional deposited metal electrodes--others employed electrodes composed either of an electron beam or a plasma formed by ionization of the residual gas in the test chamber. Test results show: (1) Kapton had unusual conduction properties; it conductivity decreased by more than an order of magnitude when heated at 100 C in a vacuum, but ultimately attained a stable and reproducible value. (2) Both Teflon and fused quartz had high dark resistivities but low photoresistivities when exposed to UV. Optical-density measurements revealed that both materials transmitted UV with little attenuation. (3) Parylene was found to have a low but relatively stable resistivity--comparatively minor changes occurred upon heating or illuminating the sample. Optical-density measurements showed that Parylene was absorbent in the UV and would prevent photoemission from the metal electrode on the back surface.
Coffey, H. T.↗
Ge:Ga and Ge:Be photoconductive detectors for far infrared astronomy from a space platform
The paper describes some of the development work on gallium-doped germanium (Ge:Ga) and beryllium-doped germanium (Ge:Be) photoconductive detectors for use in far-infrared astronomical observations from a space platform such as IRAS. The paper is concerned primarily with detector performance and is divided into two major parts. The first presents the operating principles of this type of detector, while the second presents measured performance data under low-background flux conditions. It is shown that high sensitivity can be obtained from Ge:Ga and Ge:Be detectors under low-background and low-temperature conditions of operation. These detectors are useful for astronomical observations in the far-infrared over the wavelength range 30-120 microns. Major conclusions of the research work done so far are mentioned, including that detectors cut from the same crystal show reasonably good reproducibility of operating characteristics.
Bratt, P. R.↗
Stress induced long wavelength photoconductivity in doped silicon infrared detectors
The long wavelength cutoff of a Si:P detector was extended to 34 microns by the application of a uniaxial stress. An unstressed Si:P photoconductive detector responds to photons of up to 28 microns wavelength. By applying a uniaxial stress to a detector along the /100/ crystal axis, the response was extended to approximately 34 microns. The /100/ axis was chosen as the stress direction because theoretical calculations predicted that such a stress extends the wavelength response more than one along the /110/ axis. These theoretical calculations were based upon fits to experimental data obtained at stresses of up to approximately kbar, and indicated that the extension in wavelength response continues to increase at much larger stresses.
Houck, J. R.↗
Study of photoconductive indium antimonide
Indium antimonide (InSb) material was assessed for use as photoconductive infrared detectors under low background conditions. Such detectors must be more rugged, and have lower capacitance, than the common photovoltaic InSb detector. Electronic grade n-type InSb was etched to 50 micrometers thickness, and tin and gold contacts were applied by evaporation. The test devices showed a relatively low ultimate impedance: 7 Mohms at 4.2 K. This was attributed to the presence of impurity levels of very shallow energies, and this material was judged unsuitable for low background detection.
Low, F. J.↗
Long wavelength photoconductive detectors for airborne and orbital infrared astronomy
Seven gallium doped germanium (Ge:Ga) photoconductive infrared detectors were fabricated and mounted in integrating cavities. In addition, a cold preamplifier package consisting of J230 junction field effect transistors (JFETs) was produced. Tests of the system under low photon background conditions indicated that sensitivity was limited by the Johnson noise of the load resistor. The detectors were mounted in the Ames cooled grating spectrometer, and flown on the Kuiper Airborne Observatory. Good quality astronomical data were obtained during the flight of 7 July 1983.
Houck, J. R.↗
Highly photoconducting O2-doped CdS films deposited by spray pyrolysis
CdS films have been prepared by spraying in air solutions of thiourea with either cadmium chloride or cadmium acetate with varying mole ratio and substrate temperature, and subsequently heat treating in oxygen. Substrates included both bare glass or sapphire and transparent conducting oxide-coated sapphire for electrical measurements lateral and transverse to the CdS plane, respectively. Dark resistances of over 10 to the 14th ohms and light-to-dark conductivities of up to 10 to the 7th were obtained using uncoated substrates. The use of Cd(C2H3O2)2 in place of CdCl2 greatly increased the speed of response although with some sacrifice in photoconductivity. Deposition of CdS on ITO-coated surfaces led to greatly reduced dark resistances for the case of CdCl2, but not Cd(C2H3O2)2, presumably due to HCl reaction with the ITO coating in the course of spraying with the former. Ion microprobe analysis detected indium within the CdS films exhibiting low dark resistance. Measurements of the dark and light conductivities at temperatures down to 77 K are given as are the response times for unetched and HCl-etched surfaces.
Richards, D.↗
Generation-recombination noise in extrinsic photoconductive detectors
A theory of generation-recombination noise is presented and applied to the analysis of the performance limitations of extrinsic photoconductive detectors. The theory takes account both of the photoinduced generation of carriers and of thermal generation that is due to the finite temperature of the detector. Explicit formulas are derived that relate the detector response time, responsivity, and noise equivalent power to the material properties of the photoconductor (such as the presence of compensating impurities) and to the detector's operating conditions, such as its temperature and the presence of background radiation. The detector's performance is shown to degrade at high background levels because of saturation effects.
Brukilacchio, T. J.↗
Studies on organic semiconductors. 15: Effects of the substituents on the photoconductivities of substituted anthracenes
The photocurrents of the substituted anthracenes, 1,5-diacetylanthracene (2), 1-acetylanthracene (3), 9-acetylanthracene (4), 1,5-dichloroanthracene (5), 1,5-diethylanthracene (6), 1,5-dimethoxyanthracene (7), 9-cyanoanthracene (8), and anthracene (1) were measured by using their surface type cells in nitrogen. The compounds of (1), (5), (6), (7), and (8) showed the photocurrent spectra which corresponded to the absorption spectra of their evaporated films. In the cases of (2) and (3), however, the anomalous photocurrent appeared in the threshold region of their absorption spectra. The appearance of the anomalous photocurrent was characteristic of anthracenes having the acetyl group at 1- and/or 5-position. The magnitude of the photocurrents of the 1,5-disubstituted anthracenes was similar to that of (1). The photocurrents of the monosubstituted anthracenes were smaller than that of (1). Among the monosubstituted anthracenes, the compound (4) showed no photocurrent under the same conditions. Contrary to the results obtained in the cases of phenazines, the photoconductivities of the anthracene derivatives became better in air.
Sugimoto, A.↗