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Results for “PROTON IRRADIATION”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
NASA NTRS1990

Proton irradiation of simple gas mixtures: Influence of irradiation parameters

In order to get information about the influence of irradiation parameters on radiolysis processes of astrophysical interest, methane gas targets were irradiated with 6.5 MeV protons at a pressure of 1 bar and room temperature. Yields of higher hydrocarbons like ethane or propane were found by analysis of irradiated gas samples using gas chromatography. The handling of the proton beam was of great experimental importance for determining the irradiation parameters. In a series of experiments current density of the proton beam and total absorbed energy were shown to have a large influence on the yields of produced hydrocarbons. Mechanistic interpretations of the results are given and conclusions are drawn with regard to the chemistry and the simulation of various astrophysical systems.

Sack, Norbert J.↗
DOE OSTI2026

Resilience of High-Efficiency CdSeTe:As and CdSeTe:Cu Solar Cells to Proton Irradiation

Power generation in space is currently dominated by expensive III-V multi-junction photovoltaic (PV) devices and cheap crystalline silicon (c-Si) PV devices. Both of these technologies degrade rapidly in proton-radiation-rich space environments, such as the Van Allen belt. The present study of cadmium selenide telluride- (CdSeTe-) based PV devices exposed to 150-to-1500 keV proton irradiation with fluences up to 9 x 1013 cm-2 reveal a more radiation-hard alternative to III-V and c-Si PV technologies. We report on measurement and analysis of current density vs voltage (JV), external quantum efficiency (EQE), external radiative efficiency, and capacitance vs voltage (CV) characteristics. JV characteristics of As-doped CdSeTe devices show 80% remaining power conversion efficiency (PCE) relative to unexposed controls when exposed to 650 keV protons at a fluence of 1012 cm-2. Under these same irradiation conditions, Cu-doped CdSeTe devices demonstrate an even better 95% PCE retention compared with unirradiated control devices. Evidence of radiation-induced absorber p-type doping compensation is observed in the glass-side EQE at 0 V and CV characteristics of most of the irradiated CdSeTe:As devices, but clear compensation is evident only for the most heavily irradiated CdSeTe:Cu devices. Elevated blue-green photocurrent in the film-side 0 V EQE suggests a buried junction in the most heavily irradiated CdSeTe:As devices. Although CdSeTe:Cu devices are the more resilient of the CdSeTe structures, both CdSeTe-based technologies are radiation-hard when compared to c-Si and III-V multi-junction PV.

14 SOLAR ENERGY↗
NASA NTRS1985

Performance and temperature dependencies of proton irradiated n/p and p/n GaAs and n/p silicon cells

n/p homojunction GaAs cells are found to be more radiation resistant than p/n heteroface GaAs under 10 MeV proton irradiation. Both GaAs cell types outperform conventional silicon n/p cells under the same conditions. An increased temperature dependency of maximum power for the GaAs n/p cells is attributed to differences in Voc between the two GaAs cell types. These results and diffusion length considerations are consistent with the conclusion that p-type GaAs is more radiation resistant than n-type and therefore that the n/p configuration is possibly favored for use in the space radiation environment. However, it is concluded that additional work is required in order to choose between the two GaAs cell configurations.

Weinberg, I.↗
NASA NTRS1981

Effects of low temperature periodic annealing on the deep-level defects in 200 keV proton irradiated AlGaAs-GaAs solar cells

The GaAs solar cell has shown good potential for space applications. However, degradation in performance occurred when the cells were irradiated by high energy electrons and protons in the space environment. The considered investigation is concerned with the effect of periodic thermal annealing on the deep-level defects induced by the 200 keV protons in the AlGaAs-GaAs solar cells. Protons at a fluence of 10 to the 11th P/sq cm were used in the irradiation cycle, while annealing temperatures of 200 C (for 24 hours), 300 C (six hours), and 400 C (six hours) were employed. The most likely candidate for the E(c) -0.71 eV electron trap observed in the 200 keV proton irradiated samples may be due to GaAs antisite, while the observed E(v) +0.18 eV hole trap has been attributed to the gallium vacancy related defect. The obtained results show that periodic annealing in the considered case does not offer any advantages over the one time annealing process.

Li, S. S.↗
NASA NTRS1993

Diffusion length damage coefficient and annealing studies in proton-irradiated InP

We report on the measurement of the diffusion length damage coefficient (K(sub L)) and the annealing characteristics of the minority carrier diffusion length (L(sub n)) in Czochralski-grown zinc-doped indium phosphide (InP), with a carrier concentration of 1 x 10(exp l8) cm(exp -3). In measuring K(sub L) irradiations were made with 0.5 MeV protons with fluences ranging from 1 x 10(exp 11) to 3 x 10(exp 13) cm(exp -2). Pre- and post-irradiation electron-beam induced current (EBIC) measurements allowed for the extraction of L(sub n) from which K(sub L) was determined. In studying the annealing characteristics of L(sub n) irradiations were made with 2 MeV protons with fluence of 5 x 10(exp 13) cm(exp -2). Post-irradiation studies of L(sub n) with time at room temperature, and with minority carrier photoinjection and forward-bias injection were carried out. The results showed that recovery under Air Mass Zero (AMO) photoinjection was complete. L(sub n) was also found to recover under forward-bias injection, where recovery was found to depend on the value of the injection current. However, no recovery of L(sub n) after proton irradiation was observed with time at room temperature, in contrast to the behavior of 1 MeV electron-irradiated InP solar cells reported previously.

Hakimzadeh, Roshanak↗
NASA NTRS1993

Diffusion length variation in 0.5- and 3-MeV-proton-irradiated, heteroepitaxial indium phosphide solar cells

Indium phosphide (InP) solar cells are more radiation resistant than gallium arsenide (GaAs) and silicon (Si) solar cells, and their growth by heteroepitaxy offers additional advantages leading to the development of light weight, mechanically strong, and cost-effective cells. Changes in heteroepitaxial InP cell efficiency under 0.5- and 3-MeV proton irradiations have been explained by the variation in the minority-carrier diffusion length. The base diffusion length versus proton fluence was calculated by simulating the cell performance. The diffusion length damage coefficient, K(sub L), was also plotted as a function of proton fluence.

Jain, Raj K.↗
NASA NTRS1992

Far-infrared spectral studies of phase changes in water ice induced by proton irradiation

Changes in the FIR spectrum of crystalline and amorphous water ice as a function of temperature are reported. The dramatic differences between the spectra of these ices in the FIR are used to examine the effect of proton irradiation on the stability of the crystalline and amorphous ice phases from 13 to 77 K. In particular, the spectra near 13 K show interconversion between the amorphous and crystalline ice phases beginning at doses near 2 eV/molecule and continuing cyclically with increased dose. The results are used to estimate the stability of irradiated ices in astronomical environments.

Moore, Marla H.↗
NASA NTRS1994

Performance, Defect Behavior and Carrier Enhancement in Low Energy, Proton Irradiated p(+)nn(+) InP Solar Cells

InP p(+)nn(+) cells, processed by MOCVD, were irradiated by 0.2 MeV protons and their performance and defect behavior observed to a maximum fluence of 10(exp 13)/sq cm. Their radiation induced degradation, over this fluence range, was considerably+less than observed for similarly irradiated, diffused junction n p InP cells. Significant degradation occurred in both the cell's emitter and base regions the least degradation occurring in the depletion region. A significant increase in series resistance occurs at the highest fluenc.e. Two majority carrier defect levels, E7 and E10, are observed by DLTS with activation energies at (E(sub C) - 0.39)eV and (E(sub C) - 0.74)eV respectively. The relative concentration of these defects differs considerably from that observed after 1 MeV electron irradiation. An increased carrier concentration in the cell's n-region was observed at the highest proton fluence, the change in carrier concentration being insignificant at the lower fluences. In agreement with previous results, for 1 and 1.5 MeV electron irradiated InP p(+)n junctions, the defect level E10 is attributed to a complex between zinc, diffused into the n-region from the zinc doped emitter, and a radiation induced defect. The latter is assumed to be either a phosphorus vacancy or interstitial. The increased, or enhanced carrier concentration is attributed to this complex acting as a donor.

Weinberg, I.↗
DOE OSTI2025

Separation of terbium from proton-irradiated gadolinium oxide targets – development of an effective, scalable and automatable process

This work reports an effective and scalable radiochemical separation process for isolating terbium from Gd 2 O 3 . The separation process uses three commercially available extraction chromatography resin columns, has been implemented on a computer-controlled chemistry module, and tested with 100 mg quantities of proton-irradiated nat Gd 2 O 3 . Here, the 4-hour separation procedure isolated radioterbium in 1.3 mL of 0.01 M HCl with 80 ±8% radiochemical yield and a Gd decontamination factor >(1.2 ± 0.3)·10 5 .

Adjacent lanthanide separation↗
DOE OSTI2025

Impact of proton irradiation on 4H-SiC Low Gain Avalanche Detectors (LGADs)

Silicon carbide (SiC) particle detectors have the potential to provide time resolutions and robust performance in extreme environments which exceed that of silicon detectors. In this work 4H-SiC low gain avalanche detectors (LGADs) and complementary PiN diodes were irradiated with 2.5 GeV protons at fluences up to 3.33 × 10 14 p/cm 2 . The electrostatic performance of both irradiated and non-irradiated devices was evaluated using I-V and C-V measurements. Moreover, charge collection measurements using α particles were also conducted. SiC LGADs displayed a loss in rectification, high ON-state resistances >10 10 Ω-cm 2 , and the complete removal of gain when exposed to the highest proton fluence. Additionally, the reductions in capacitance and OFF-state current pointed to compensation of the gain layer as a gain reducing mechanism. The introduction of radiation-induced defects also hinders carrier acceleration, which reduces impact ionization and further gain reduction. LGADs exposed to a fluence of 1 × 10 14 p/cm 2 experienced a partial recovery in gain (originally having a value of ∼ 2) with a value of ∼ 1.65 when applying a bias of 500 V. Charge trapping was also seen in the reduction of charge collection efficiency (CCE) to ∼ 65% for the PiN diode. However, despite the reduction in device performance, the demonstration of a measurable signal after irradiation points to the potential of SiC LGAD detectors for future high energy physics applications.

43 PARTICLE ACCELERATORS↗
NASA NTRS1972

Effects of proton irradiation on several spacecraft science components.

In connection with programs for the exploration of the outer planets, several models have been developed and used to analyze the radiation hazard to the spacecraft. Typical components found in space flight science instruments have been tested to determine their capability to function properly before, after and, in some cases during, exposures to energy equivalenced levels predicted by the models. A summary of proton-irradiation tests is provided.

Parker, R. H.↗
DOE OSTI2024

Effects of Proton Irradiation on the Performance of Skipper CCDs

Skipper CCDs are a mature detector technology that has been suggested for future space telescope instruments requiring sub-electron readout noise in the near-ultraviolet to the near-infrared. While modern skipper CCDs inherit from the radiation-tolerant p-channel detectors developed by LBNL, the effects of high doses of ionizing radiation on skipper CCDs (such as those expected in space) remains largely unmeasured. We report preliminary results on the performance of p-channel skipper CCDs following irradiation with 217-MeV protons at the Northwestern Medicine Proton Center. The total nonionizing energy loss (NIEL) experienced by the detectors exceeds 6 years at the Sun-Earth Lagrange Point 2 (L2). We demonstrate that the skipper amplifier continues to function as expected following this irradiation. Owing to the low readout noise of these detectors, controlled irradiation tests can be used to sensitively characterize the charge transfer inefficiency, dark current, and the density and time constants of charge traps as a function of proton fluence. We conclude with a brief outlook toward future tests of these detectors at other proton and gamma-ray facilities.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
NASA NTRS1992

Far infrared spectra of amorphous and crystalline water ice and changes in these phases as the result of proton irradiation

Far infrared spectra from 20 microns (500 cm(sup -1)) to 100 microns (100 cm(sup -1)) of water ice were measured. Amorphous ice deposited at 13 K has one absorption band at 45 microns (220 cm(sup -1)). Amorphous ice evolves into a crystalline form with absorptions at 44 microns (229 cm(sup -1)) and 62 microns (162 cm(sup -1)) as the temperature is increased to 155 K. Spectra documenting this phase change are presented as well as spectra of crystalline ice at temperatures between 13 K and 155 K. Far infrared spectra of amorphous and crystalline water ice before and after proton irradiation are also presented. Changes in these two forms are discussed in relation to ices in comets, grains, and planetary satellites in various radiation environments. Observations of non-terrestrial clathrate hydrates are still lacking despite the fact that clathrates first were suggested to exist in cometary and interstellar ices over forty years ago. Spectroscopy, the most direct method of astronomical detection, has been hampered by the similarity of clathrate hydrate spectra to those of unenclathrated guest molecules and solid H2O. A methanol (CH3OH) clathrate hydrate, using a recently published procedure, was prepared and its far-IR spectrum investigated. The spectrum is quite differenct from that of either unenclathrated CH3OH or solid H2O and so should be of value in astronomical searches for this clathrate.

Hudson, Reggie L.↗
NASA NTRS1987

Results of 1 MeV proton irradiation of front and back surfaces of silicon solar cells

Several silicon solar cells with and without back surface fields (BSF), having thicknesses of 200 microns and 63 microns were irradiated with 1 MeV protons having fluences between 1 times 10 to the 10th power and 1 times 10 to the 12th power p/square cm. The irradiation was performed using both normal and isotropic incidence on the front as well as back surfaces of the solar cells. The results of the back surface irradiations are analyzed using a model in which irradiation induced defects across the high-low (BSF) junction are considered. It is concluded that degradation of the high-low junction is responsible for the severe performance loss in thinner cells when irradiated from the rear.

Anspaugh, B. E.↗
NASA NTRS1989

Proton irradiation of SiH4-Fe(CO)5-H2O ices - Production of refractory silicates and implications for the solar nebula

The results of a number of experiments are reported in which SiH4-Fe(CO)5-H2O ice mixtures were irradiated by 1 MeV protons at 15 K and then warmed to room temperature in approximately 50 K steps. The properties of a sample were monitored by observing its infrared absorption spectrum as a function of its processing history. In each experiment in which ice samples containing SiH4 were irradiated, a refractory amorphous silicate residue remained after warming to room temperature. In addition to the usual broad silicate features at 10 and 20 microns, features due to water or hydroxyl at 3 and 6.2 microns, and a feature due to CO at 5 microns, a surprisingly stable infrared feature at 4.6 microns, attributed to the SiH stretching fundamental, was observed.

Nuth, J. A.↗
NASA NTRS1986

Cell performance and defect behavior in proton-irradiated lithium-counterdoped n(+)p silicon solar cells

Lithium-counterdoped n(+)p silicon solar cells were irradiated by 10-MeV protons, and their performance was determined as a function of fluence. It was found that the cell with the highest lithium concentration exhibited the higher radiation resistance. Deep-level transient spectroscopy studies of deep-level defects were used to identify two lithium-related defects. Defect energy levels obtained after the present 10-MeV irradiations were found to be markedly different than those observed after previous 1-MeV electron irradiations. However, the present DLTS data are consistent with previous suggestion by Weinberg et al. (1984) of a lithium-oxygen interaction which tends to inhibit formation of an interstitial boron-oxygen defect.

Weinberg, I.↗