Current Source Gate Driver for dV/dt Testing of SiC Power Devices.
Abstract not provided.
Booth, Kristen↗
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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Low-leakage regrown GaN p-n junctions for GaN power devices
Fabricating a regrown GaN p-n junction includes depositing a n-GaN layer on a substrate including n + -GaN, etching a surface of the n-GaN layer to yield an etched surface, depositing a p-GaN layer on the etched surface, etching a portion of the n-GaN layer and a portion of the p-GaN layer to yield a mesa opposite the substrate, and passivating a portion of the p-GaN layer around an edge of the mesa. The regrown GaN p-n junction is defined at an interface between the n-GaN layer and the p-GaN layer. The regrown GaN p-n junction includes a substrate, a n-GaN layer on the substrate having an etched surface, a p-GaN layer on the etched surface, a mesa defined by an etched portion of the n-GaN layer and an etched portion of the p-GaN layer, and a passivated portion of the p-GaN layer around an edge of the mesa.
Zhao, Yuji↗
A COMPACT, LOW POWER DEVICE USING MIE RESONANCE FOR MULTISPECTRAL POLARIZATION IMAGE DETECTION FINAL REPORT
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47 OTHER INSTRUMENTATION↗
Preliminary design development of 100 KW rotary power transfer device
Contactless power transfer devices for transferring electrical power across a rotating spacecraft interface were studied. A power level of 100 KW was of primary interest and the study was limited to alternating current devices. Rotary transformers and rotary capacitors together with the required dc to ac power conditioning electronics were examined. Microwave devices were addressed. The rotary transformer with resonant circuit power conditioning was selected as the most feasible approach. The rotary capacitor would be larger while microwave devices would be less efficient. A design analysis was made of a 100 KW, 20 kHz power transfer device consisting of a rotary transformer, power conditioning electronics, drive mechanism and heat rejection system. The size, weight and efficiency of the device were determined. The characteristics of a baseline slip ring were presented. Aspects of testing the 100 KW power transfer device were examined. The power transfer device is a feasible concept which can be implemented using presently available technologies.
Weinberger, S. M.↗
Picosecond magneto-optic thermometry measurements of nanoscale thermal transport in AlN thin films
The thermal conductivity Λ of wide bandgap semiconductor thin films, such as AlN, affects the performance of high-frequency devices, power devices, and optoelectronics. However, accurate measurements of Λ in thin films with sub-micrometer thicknesses and Λ > 100 W m -1 K -1 is challenging. Widely used pump/probe metrologies, such as time–domain thermoreflectance (TDTR) and frequency–domain thermoreflectance, lack the spatiotemporal resolution necessary to accurately quantify thermal properties of sub-micrometer thin films with high Λ. In this work, we use a combination of magneto-optic thermometry and TiN interfacial layers to significantly enhance the spatiotemporal resolution of pump/probe thermal transport measurements. We use our approach to measure Λ of 100, 400, and 1000 nm AlN thin films. We coat AlN thin films with a ferromagnetic thin-film transducer with the geometry of (1 nm-Pt/0.4 nm-Co) x3 /(2 nm-TiN). This PtCo/TiN transducer has a fast thermal response time of <50 ps, which allows us to differentiate between the thermal response of the transducer, AlN thin film, and substrate. For the 100, 400, and 1000 nm thick AlN films, we determine Λ to be 200 ± 80, 165 ± 35, and 300 ± 70 W m -1 K -1 , respectively. We conclude with an uncertainty analysis that quantifies the errors associated with pump/probe measurements of thermal conductivity, as a function of transducer type, thin-film thermal conductivity, and thin-film thickness. Time resolved magneto-optic Kerr effect experiments can measure films that are three to five times thinner than is possible with standard pump/probe metrologies, such as TDTR. This advance in metrology will enable better characterization of nanoscale heat transfer in high thermal conductivity material systems like wide bandgap semiconductor heterostructures and devices.
36 MATERIALS SCIENCE↗
Power converter circuitry for photovoltaic devices
Power converter circuitry includes a direct current (DC) input comprising a first DC input node and a second DC input node, an alternating current (AC) output comprising a first AC output node coupled to the first DC input node and a second AC output node, a first boost switch coupled between the second DC input node and a boost intermediate node, a second boost switch coupled between the boost intermediate node and a common node, a boost inductor coupled between the boost intermediate node and the first DC input node, a link capacitor coupled between the second DC input node and the common node, a first half-bridge switch coupled between the second DC input node and a half-bridge intermediate node, a second half-bridge switch coupled between the half-bridge intermediate node and the common node, and a half-bridge inductor coupled between the half-bridge intermediate node and the second AC output node.
Ayyanar, Rajapandian↗
Micro-grid for Future Planetary Surface Needs
Under the current Artemis Program, the National Aeronautics and Space Administration (NASA) will send its next set of astronauts (first woman and next man) to the Moon by 2024 and establish a sustainable presence on the lunar surface by 2028. The challenge of creating a sustained lunar surface presence is significantly different than previous efforts. Lunar surface operations will require access to continuous and highly reliable power to support mission needs, such as to support ISRU operations. Adding to this challenge, the lunar surface operations are not going to be established over a single effort, rather the system and operations will evolve and grow over time (years). The first initial loads that arrive on the lunar surface will be integrated to their own dedicated power sources. As the lunar surface operations grow, so will the demand for power and at some point these individual loads will require more power than can be generated with any single power device. This power demand drives the need for inter-connecting the loads and power devices to share power between them, resulting in a micro-grid. One of the advantages of developing a lunar surface micro-grid is that allows lunar surface operations to resemble electrical utility operations on Earth; it allows power to be generated where it is convenient and allows power to be consumed where it is convenient, rather than negotiating between generation and consumption. The micro-grid concept also provides another benefit of affording the ability to increase overall system reliability by integrating dissimilar power generation and energy storage devices together, for example modifying the power generation strategy to include both solar arrays and nuclear. Creating a lunar surface micro-grid has its advantages, however there are significant challenges associated with an evolvable micro-grid concept. The challenges include how to efficiently transmit large amounts of power (10kW+) long distances (1kW+), how to effectively integrate dissimilar power generation and energy storage devices to maximize power consumption and minimize downtime, and how to physically connect these devices together with a connector that can survive the lunar environment (dust, extreme cold temperatures) and is capable of both astronaut and robotic operation. The basic components of the micro-grid have to be designed to ensure the system is sustainable, modular, and reconfigurable. An interface to the micro-grid has to be designed that allows for additional technologies, some of which may not yet be fully designed, to easily integrate into the micro-grid concept. This presentation discusses these lunar challenges in some more depth and offers a path forward in designing an evolvable micro-grid to meet the needs of the lunar surface operations and proposes a Universal Micro-grid Interface Converter to connect these dissimilar power sources and mission loads to the micro-grid.
Jeffrey Csank↗
A Thermal and Electrical Analysis of Power Semiconductor Devices
The state-of-art power semiconductor devices require a thorough understanding of the thermal behavior for these devices. Traditional thermal analysis have (1) failed to account for the thermo-electrical interaction which is significant for power semiconductor devices operating at high temperature, and (2) failed to account for the thermal interactions among all the levels involved in, from the entire device to the gate micro-structure. Furthermore there is a lack of quantitative studies of the thermal breakdown phenomenon which is one of the major failure mechanisms for power electronics. This research work is directed towards addressing. Using a coupled thermal and electrical simulation, in which the drift-diffusion equations for the semiconductor and the energy equation for temperature are solved simultaneously, the thermo-electrical interactions at the micron scale of various junction structures are thoroughly investigated. The optimization of gate structure designs and doping designs is then addressed. An iterative numerical procedure which incorporates the thermal analysis at the device, chip and junction levels of the power device is proposed for the first time and utilized in a BJT power semiconductor device. In this procedure, interactions of different levels are fully considered. The thermal stability issue is studied both analytically and numerically in this research work in order to understand the mechanism for thermal breakdown.
Vafai, Kambiz↗
Power semiconductor device with negative thermal feedback
Composite power semiconductor avoids second breakdown and provides stable operation. It consists of an array of parallel-connected integrated circuits fabricated in a single chip. The output power device and associated low-level amplifier are closely coupled thermally, so that they have a predetermined temperature relationship.
Borky, J. M.↗
Thermal Stress Reduction in Power Switching Devices Using Distributed Loss PWM Concept for Current Source Inverters
A new modulation scheme is proposed for current source inverters (CSIs) that reduces the variation and peak junction temperature in the CSIs' power devices. The distributed loss pulse-width modulation (DLM) concept is introduced and applied to traditional space vector modulation methods to develop modified modulation schemes that reduce the thermal stress on power devices. The device junction temperatures resulting from conventional and DLM schemes are compared. Simulation and experimental results confirm that the proposed DLM concept reduces thermal stress on the devices while maintaining the same high output current waveform quality compared to traditional CSI modulation schemes. The CSI power device lifetime (i.e., the number of cycles to failure) are estimated using the simulation and experimental results. The proposed DLM significantly increases the device lifetime (by 5 to 6 times) by reducing the junction temperature variation compared to the conventional modulations.
42 ENGINEERING↗
Electronic load for testing power generating devices
Instrument tests various electric power generating devices by connecting the devices to the input of the load and comparing their outputs with a reference voltage. The load automatically adjusts until voltage output of the power generating device matches the reference.
Friedman, E. B.↗
The impact of interfacial Si contamination on GaN-on-GaN regrowth for high power vertical devices
The development of gallium nitride (GaN) power devices requires a reliable selective-area doping process, which is difficult to achieve because of ongoing challenges associated with the required etch-then-regrow process. The presence of silicon (Si) impurities of unclear physical origin at the GaN regrowth interface has proven to be a major bottleneck. Furthermore, this paper investigates the origin of Si contamination at the epitaxial GaN-on-GaN interface and demonstrates an approach that markedly reduces its impact on device performance. An optimized dry-etching approach combined with UV-ozone and chemical etching is shown to greatly reduce the Si concentration levels at the regrowth interface, and a significant improvement in a reverse leakage current in vertical GaN-based p–n diodes is achieved.
36 MATERIALS SCIENCE↗
Strain mapping of GaN substrates and epitaxial layers used for power electronic devices by synchrotr
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Liu, Yafei↗
Materials and Device Optimization for High Power SiGe HBT Amplifiers at X-Band Frequencies
The driving force behind SiGe development is the potential for high frequency and high power devices that provide comparable functionality as more expensive semiconductors such as InP and GaAs, but at a much lower cost. Additional advantages are the potential for incorporating SiGe devices onto monolithic Si chips and fabricating entire systems, such as receiver front-ends or RF power amplifiers, on a single chip. The work reported in this paper summarizes the materials and simulation aspects of a much larger project, which will eventually lead to SiGe HBT amplifiers with output powers greater than 1 W and over 35 dB gain at X-band frequencies. To achieve these goals, accurate analysis of the materials properties, especially in the base region, and highly refined amplifier design procedures must be established. In this paper we report the precision that may be obtained using optical ellipsometry to monitor the base and emitter thicknesses and Ge content of the base. We also report the extent of crystalline degradation in state-of-the-art SiGe films with high Ge contents. The objective of this work is to access the materials quality of HBT structures, and then use this data to model how various defects impact device performance, and which defects are most likely to limit high power and/or high frequency performance.
Mueller, C. H.↗
Microfabricated thermoelectric power-generation devices
A device for generating power to run an electronic component. The device includes a heat-conducting substrate (composed, e.g., of diamond or another high thermal conductivity material) disposed in thermal contact with a high temperature region. During operation, heat flows from the high temperature region into the heat-conducting substrate, from which the heat flows into the electrical power generator. A thermoelectric material (e.g., a BiTe alloy-based film or other thermoelectric material) is placed in thermal contact with the heat-conducting substrate. A low temperature region is located on the side of the thermoelectric material opposite that of the high temperature region. The thermal gradient generates electrical power and drives an electrical component.
Fleurial, Jean-Pierre↗
Microfabricated thermoelectric power-generation devices
A device for generating power to run an electronic component. The device includes a heat-conducting substrate (composed, e.g., of diamond or another high thermal conductivity material) disposed in thermal contact with a high temperature region. During operation, heat flows from the high temperature region into the heat-conducting substrate, from which the heat flows into the electrical power generator. A thermoelectric material (e.g., a BiTe alloy-based film or other thermoelectric material) is placed in thermal contact with the heat-conducting substrate. A low temperature region is located on the side of the thermoelectric material opposite that of the high temperature region. The thermal gradient generates electrical power and drives an electrical component.
Fleurial, Jean-Pierre↗
Application of copper-carbon fiber composites to power semiconductor devices
Copper-carbon composite electrodes are used in a series of power semiconductor devices, i.e., resin molded diodes, button-type diodes, stud-type diodes, power modules, and integrated circuit igniter modules. The properties of these power semiconductor devices compare favorably with those conventional devices using Mo or W electrodes. In thermal fatigue tests, no degradation in the electrical and mechanical characteristics of these devices are observed. The new composite electrode with carbon fibers satisfies all of the major requirements for the electrodes in power semiconductor devices.
Kuniya, Keiichi↗
Procedure for pressure contact on high-power semiconductor devices free of thermal fatigue
To eliminate thermal fatigue, a procedure for manufacturing semiconductor power devices with pure pressure contact without solid binding was developed. Pressure contact without the use of a solid binding to avoid a limitation of the maximum surface in the contact was examined. A silicon wafer covered with a relatively thick metal layer is imbedded with the aid of a soft silver foil between two identically sized hard contact discs (molybdenum or tungsten) which are rotationally symmetrical. The advantages of this concept are shown for large diameters. The pressure contact was tested successfully in many devices in a large variety of applications.
Knobloch, J.↗