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At least 73 records · Page 4

Efficiency droop contributors in InGaN green light emitting diodes

Here, efficiency droop contributors (i.e., inherent Auger–Meitner recombination, polarization-induced effects, thermal effects, and light extraction) in InGaN green light emitting diodes (LEDs) are decoupled and quantified. First, a modified ABC model is developed, and external quantum efficiency measurements are taken under constant and pulsed currents (⁠ EQE Constant and EQE Pulsed ⁠, respectively). The LED internal quantum efficiency with and without thermal effects (⁠ IQE$^{ABC}_{Constant}$ and IQE$^{ABC}_{Pulsed}$⁠, respectively) is extracted using the modified model. Then, using Raman spectroscopy, the LED junction temperature is extracted. Finally, using the optical-electrical model (OEM), the polarization- and temperature-independent LED internal quantum efficiency (⁠ IQE OEM ) is calculated from the modified ABC model and the extracted junction temperature. By comparing external (⁠ EQE Constant ⁠) and the three internal quantum efficiencies (⁠ IQE$^{ABC}_{Constant}$, IQE$^{ABC}_{Pulsed}$⁠, and IQE OEM ), the impacts of inherent Auger–Meitner recombination, polarization-induced effects, thermal effects, and light extraction on the efficiency droop are decoupled and quantified. It is found that inherent Auger–Meitner recombination-induced droop is approximately 49% of the total efficiency droop in commercial green LEDs, while polarization-induced effects contribute about 35%, and thermal droop accounts for nearly 16%. Lastly, these findings suggest, to quash the green gap, it is critical to search for materials and device designs with low inherent Auger–Meitner coefficients and polarization fields, respectively.

42 ENGINEERING↗

Efficiency Improvement Progress in Green, Yellow and Red III Nitride LEDs

Large improvements in the efficiencies of visible light emitting diodes (LEDs) have been realized over the last decade. Extending the range of wavelengths over which efficient emission can be realized continues to be a goal of active research. Efficiency droop refers to a non-thermal decrease in internal quantum efficiency with increasing current density that affects III-nitride LEDs in general, but more severely those with longer emission wavelengths. The so-called green gap is mainly related to the wavelength dependence of efficiency droop. The peak EQE in commercial green LEDs exceeds 60% but corresponds to a current density that is an order of magnitude lower than required for applications. In this presentation, we will review some of the underlying physics that contribute to the wavelength dependence of droop. We will discuss some challenges in the development of long wavelength III-nitride LEDs and possible strategies to mitigate efficiency droop based on the understanding that nonradiative Auger recombination is the root cause. One general strategy is to engineer the multi-quantum well active region to minimize the average carrier density. Another approach is to design wells with a more favorable balance between the radiative and Auger coefficients. Finally, we will present the current status of the performance of green, yellow and red III-Nitride LEDs.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗

Dissociative electron recombination and rotational cooling of the deuterated triatomic hydrogen ions H 2 ⁡D + and D 2 ⁢H +

We have measured the dissociative recombination (DR) of the deuterated triatomic hydrogen ions H 2 ⁡D + and D 2 ⁢H + as a function of storage time at the Cryogenic Storage Ring (CSR). Both molecular ions were stored for up to 1000 s inside the cryogenic vacuum of the CSR prior to the electron recombination measurements, allowing them to cool to their lowest rotational states. We implement a comprehensive model for all relevant processes to predict the internal state evolution of the ions during storage inside the CSR, employing calculated radiative transition strengths and state-selective rate coefficients for electron collisions. Our DR rate coefficient measurements with deuterated triatomic hydrogen ions in defined quantum states allow for meaningful comparisons with state-of-the-art theoretical calculations, paving the way for a better understanding of the complex DR process for polyatomic molecular ions.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

Impact of Alloy-Disorder-Induced Localization on Hole Diffusion in Highly Excited c -Plane and m -Plane (In, Ga) N Quantum Wells

The diffusion coefficient of holes can provide knowledge about carrier localization in (In, Ga)N, where the carrier dynamics are altered by randomly fluctuating potential landscape. In group-III nitrides, the diffusivity of holes is difficult to measure by electrical methods but it can be studied using optical techniques. Here, we investigate the dependence of the hole diffusion coefficient on direction and carrier density in c-plane and m-plane (In, Ga)N structures by employing the light-induced transient-grating technique. We show that the hole diffusion coefficient is anisotropic in the m-plane structure, where it is several times larger along the a crystallographic direction than along the c direction. Such anisotropy is observed within the broad range of carrier densities from 10 18 to 10 20 cm –3 . The diffusivity changes nonmonotonously with increasing photoexcitation, this dependence being different in thick and thin layers. We argue that an unexpectedly high diffusion coefficient at low carrier densities in thick quantum wells can be a signature of efficient hole transport via percolative paths occurring due to compositional disorder. In turn, a decrease of diffusivity with the excitation can reflect the effect of Coulomb blockade of these paths. Lastly, we demonstrate that disorder impacts carrier diffusivity even at carrier densities above 10 19 cm –3 , where the overflow of localized states must be included to explain the observed increase of the diffusion coefficient with the carrier density.

36 MATERIALS SCIENCE↗

Multijunction Electroluminescent Cooling

We propose a multijunction configuration for an electroluminescent cooling system, incorporating multiple semiconductor layers with different band gaps. Through theoretical analysis focusing on cooling power density and coefficient of performance, we show that increasing the number of semiconductor layers results in an enhanced performance of electroluminescent cooling. We highlight the reduction of operating voltage as a pivotal factor contributing to this improvement. Furthermore, we show that the enhancement can persist in the presence of nonradiative recombination. Our work indicates the potential of multijunction configurations in advancing the capabilities of electroluminescent cooling. Published by the American Physical Society 2024

14 SOLAR ENERGY↗

Quarkonium polarization in medium from open quantum systems and chromomagnetic correlators

Here, by considering the Markovian condition and applying the Wigner transformation upon the diagonal spin components of the quarkonium density matrix with the semiclassical expansion, we systematically derive the Boltzmann transport equation for quarkonia with polarization dependence in the quantum optical limit. Unlike the spin-independent collision terms governed by certain chromoelectric field correlators, new gauge invariant correlators of chromomagnetic fields determine the recombination and dissociation terms with polarization dependence at the order we are working. We also derive a Lindblad equation describing the in-medium transitions between spin-singlet and spin-triplet heavy quark-antiquark pairs in the quantum Brownian motion limit. The Lindblad equation is governed by new transport coefficients defined in terms of the chromomagnetic field correlators. Our formalism is generic and valid for both weakly coupled and strongly coupled quark gluon plasmas. It can be further applied to study spin alignment of vector quarkonia in heavy ion collisions.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Self-Trapped-Exciton Radiative Recombination in β–Ga 2 O 3 : Impact of Two Concurrent Nonradiative Auger Processes

The peculiarities of radiative and nonradiative processes associated with self-trapped intrinsic eXcitons in the excited β-Ga 2 O 3 crystals are studied via time-resolved techniques of induced absorption, transient grating, and photoluminescence (PL) at room temperature. The excitation above the bandgap is produced by laser pulses with linear light polarization parallel and orthogonal in the (–201) and (001) planes. We elucidate that the nonradiative recombination rate occurring in the eXciton prevails over its radiative emission rate in a wide range of free carrier concentration composed of excited and equilibrium electrons. Hence, the nonradiative recombination has no effect on the strong anisotropy and the shape of the eXciton emission band. However, we find out that the conventional ABC model of electron effective lifetime is insufficient for explanation of the excitation dependences. Inclusion of two nonradiative Auger mechanisms in a modified ABC formula provides excellent agreement of these dependences. We conclude that the trap-assisted Auger process is in proportion to the free electron density with coefficient B = 1.1 × 10 –11 cm 3 /s and appears at low/intermediate excitation, while the triple-particle Auger process is in proportion to Δn 2 with coefficient C = 8 × 10 –30 cm 6 /s and appears at high excitation conditions. The transition between two Auger mechanisms is accompanied by a rise of the eXciton diffusivity in preferred crystallographic directions where the radiative PL intensity is maximal. The diffusion length LD in these directions can reach values ~300 nm, but, at high excitations, LD becomes limited by Auger lifetimes. These findings pave the way for the implementation of self-trapped eXcitons into specific optoelectronic devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Vertical Architecture Solution-Processed Quantum Dot Photodetectors with Amorphous Selenium Hole Transport Layer

Colloidal quantum dots (CQDs) provide wide spectral tunability and high absorption coefficients owing to quantum confinement and large oscillator strengths, which along with solution processability, allow a facile, low-cost, and room-temperature deposition technique for the fabrication of photonic devices. However, many solution-processed CQD photodetector devices demonstrate low specific-detectivity and slow temporal response. To achieve improved photodetector characteristics, limiting carrier recombination and enhancing photogenerated carrier separation are crucial. In this study, we develop and present an alternate vertical-stack photodetector wherein we use a solution-processed quantum dot photoconversion layer coupled to an amorphous selenium (a-Se) wide-bandgap charge transport layer that is capable of exhibiting single-carrier hole impact ionization and is compatible with active-matrix readout circuitry. This a-Se chalcogenide transport layer enables the fabrication of high-performance and reliable solution-processed quantum dot photodetectors, with enhanced charge extraction capabilities, high specific detectivity (D* ~ 0.5–5 × 10 12 Jones), fast 3 dB electrical bandwidth (3 dB BW ~ 22 MHz), low dark current density (J D ~ 5–10 pA/cm 2 ), low noise current (i n ~ 20–25 fW/Hz 1/2 ), and high linear dynamic range (LDR ~130–150 dB) across the measured visible electromagnetic spectrum (~405–656 nm).

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Self-consistent and detailed opacities from a non-equilibrium average-atom model

Modern density functional theory (DFT) is a powerful tool for accurately predicting self-consistent material properties such as equations of state, transport coefficients and opacities in high energy density plasmas, but it is generally restricted to conditions of local thermodynamic equilibrium (LTE) and produces only averaged electronic states instead of detailed configurations. We propose a simple modification to the bound-state occupation factor of a DFT-based average-atom model that captures essential non-LTE effects in plasmas—including autoionization and dielectronic recombination—thus extending DFT-based models to new regimes. Finally, we then expand the self-consistent electronic orbitals of the non-LTE DFT-AA model to generate multi-configuration electronic structure and detailed opacity spectra. This article is part of the theme issue ‘Dynamic and transient processes in warm dense matter’.

36 MATERIALS SCIENCE↗

Radially resolved active charge exchange measurements of the hydrogenic isotope fraction on DIII-D

Radially resolved hydrogenic isotope fraction measurement capabilities have been developed for DIII-D using the main-ion charge exchange recombination (MICER) spectroscopy system in preparation for mixed hydrogen and deuterium experiments. Constraints on the hydrogenic ion temperatures and velocities based on measurements of the impurity ion properties are required to accurately fit the spectrum. Corrections for cross sectional distortions, spatial smearing due to the halo, and a neoclassical offset between the impurity and hydrogenic toroidal rotation are applied to the constraints prior to fitting the MICER spectrum. Extensive atomic physics calculations have been performed using the FIDASIM code, which has recently been improved to allow simulations using mixtures of hydrogenic species. Overall, these results demonstrate that for the same plasma parameters, the Dα emission is 20%–30% brighter than Hα due to differences in rate coefficients associated with the different ion thermal velocities for the same temperature and therefore must be taken into consideration when calculating absolute densities. However, despite these differences, the absolute error when estimating the hydrogen isotope fraction [n H /(n H + n D )] by using the Hα radiance fraction [L Hα /(L Hα + L Dα )] is typically less than 5% due to the way the fraction is formed, making the radiance fraction a reasonably accurate estimate of the isotope fraction for most cases.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Substrate-Dependent Exciton Diffusion and Annihilation in Chemically Treated MoS 2 and WS 2

Atomically thin semiconductors such as monolayer MoS 2 and WS 2 exhibit nonlinear exciton–exciton annihilation at notably low excitation densities (below ~10 excitons/μm 2 in exfoliated MoS 2 ). In this work, we show that the density threshold at which annihilation occurs can be tuned by changing the underlying substrate. When the supporting substrate is changed from SiO 2 to Al 2 O 3 or SrTiO 3 , the rate constant for second-order exciton–exciton annihilation, k XX [cm 2 /s], is reduced by 1 or 2 orders of magnitude, respectively. Using transient photoluminescence microscopy, we measure the effective room-temperature exciton diffusion coefficient in bis(trifluoromethane)sulfonimide-treated MoS 2 to be in the range D = 0.03–0.06 cm 2 /s, corresponding to a diffusion length of L D = 350 nm for an exciton lifetime of τ = 18 ns, which does not depend strongly on the substrate. We discuss possible mechanisms for the observed behavior, including substrate permittivity, long-range exciton–exciton or exciton–charge interactions, defect-mediated Auger recombination, and spatially inhomogeneous exciton populations arising from substrate-induced disorder. Exciton annihilation limits the overall efficiency of 2D semiconductor devices operating at high exciton densities; the ability to tune these interactions via the underlying substrate is an important step toward more efficient optoelectronic technologies featuring atomically thin materials.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Simultaneously Enhancing Exciton/Charge Transport in Organic Solar Cells by an Organoboron Additive

Efficient exciton diffusion and charge transport play a vital role in advancing the power conversion efficiency (PCE) of organic solar cells (OSCs). Here, a facile strategy is presented to simultaneously enhance exciton/charge transport of the widely studied PM6:Y6-based OSCs by employing highly emissive trans-bis(dimesitylboron)stilbene (BBS) as a solid additive. BBS transforms the emissive sites from a more H-type aggregate into a more J-type aggregate, which benefits the resonance energy transfer for PM6 exciton diffusion and energy transfer from PM6 to Y6. Transient gated photoluminescence spectroscopy measurements indicate that addition of BBS improves the exciton diffusion coefficient of PM6 and the dissociation of PM6 excitons in the PM6:Y6:BBS film. Transient absorption spectroscopy measurements confirm faster charge generation in PM6:Y6:BBS. Moreover, BBS helps improve Y6 crystallization, and current-sensing atomic force microscopy characterization reveals an improved charge-carrier diffusion length in PM6:Y6:BBS. Finally, owing to the enhanced exciton diffusion, exciton dissociation, charge generation, and charge transport, as well as reduced charge recombination and energy loss, a higher PCE of 17.6% with simultaneously improved open-circuit voltage, short-circuit current density, and fill factor is achieved for the PM6:Y6:BBS devices compared to the devices without BBS (16.2%).

14 SOLAR ENERGY↗

Measurement of prompt D s + -meson production and azimuthal anisotropy in Pb–Pb collisions at s NN = 5.02 TeV

The production yield and angular anisotropy of prompt $D^{+}_{s}$ mesons were measured as a function of transverse momentum (p T ) in Pb–Pb collisions at a centre-of-mass energy per nucleon pair $\sqrt{s_{NN}}$ = 5.02 TeV collected with the ALICE detector at the LHC. $D^{+}_{s}$ mesons and their charge conjugates were reconstructed at midrapidity (|y| < 0.5) from their hadronic decay channel $D^{+}_{s}$ → φπ + , with φ → K - K + , in the p T intervals 2 < p T < 50 GeV/c and 2 < p T < 36 GeV/c for the 0–10% and 30–50% centrality intervals. For p T > 10 GeV/c, the measured $D^{+}_{s}$ -meson nuclear modification factor R AA is consistent with the one of non-strange D mesons within uncertainties, while at lower pT a hint for a $D^{+}_{s}$ -meson R AA larger than that of non-strange D mesons is seen. The enhanced production of $D^{+}_{s}$ relative to non- strange D mesons is also studied by comparing the pT-dependent $D^{+}_{s}$ /D 0 production yield ratios in Pb–Pb and in pp collisions. The ratio measured in Pb–Pb collisions is found to be on average higher than that in pp collisions in the interval 2 < p T < 8 GeV/c with a significance of 2.3σ and 2.4σ for the 0–10% and 30–50% centrality intervals. The azimuthal anisotropy coefficient v2 of prompt $D^{+}_{s}$ mesons was measured in Pb–Pb collisions in the 30–50% centrality interval and is found to be compatible with that of non-strange D mesons. The main features of the measured RAA, $D^{+}_{s}$ /D 0 ratio, and v 2 as a function of p T are described by theoretical calculations of charm-quark transport in a hydrodynamically expanding quark–gluon plasma including hadronisation via charm-quark recombination with light quarks from the medium. The p T -integrated production yield of $D^{+}_{s}$ mesons is compatible with the prediction of the statistical hadronisation model.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Phenethylammonium Functionalization Enhances Near-Surface Carrier Diffusion in Hybrid Perovskites

Understanding semiconductor surface properties and manipulating them chemically are critical for improving their performance in optoelectronic devices. Hybrid halide perovskites have emerged as an exciting class of highly efficient solar materials; however, their device performance could be limited by undesirable surface properties that impede carrier transport and induce recombination. Here we show that surface functionalization of methylammonium lead iodide (MAPbI 3 ) perovskite with phenethylammonium iodide (PEAI), a commonly employed spacer cation in two-dimensional perovskites, can enhance carrier diffusion in the near-surface regions and reduce defect density by more than one order of magnitude. Using transient transmission and reflection microscopy, we selectively imaged the transport of the carriers near the (001) surface and the bulk carriers in single-crystal MAPbI 3 microplates. The surface functionalization increases the diffusion coefficient of the carriers in a 40-nm subsurface region from ~ 0.6 cm 2 s -1 to ~ 1 cm 2 s -1 , similar to the value for bulk carriers. These results suggest the PEA ligands are effective in suppressing surface defect and phonon scattering and shed light on the mechanisms for enhancing photophysical properties and improving solar cell efficiency.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Redshift-space streaming velocity effects on the Lyman- α forest baryon acoustic oscillation scale

The baryon acoustic oscillation (BAO) scale acts as a standard ruler for measuring cosmological distances and has therefore emerged as a leading probe of cosmic expansion history. However, any physical effect that alters the length of the ruler can lead to a bias in our determination of distance and expansion rate. One of these physical effects is the streaming velocity, the relative velocity between baryons and dark matter in the early Universe, which couples to the BAO scale due to their common origin in acoustic waves at recombination. In this work, we investigate the impact of streaming velocity on the BAO feature of the Lyman- α forest auto-power spectrum, one of the main tracers being used by the recently commissioned Dark Energy Spectroscopic Instrument (DESI). To do this, we develop a perturbative model for Lyman- α flux fluctuations which is complete to second order for a certain set of fields, and applicable to any redshift-space tracer of structure since it is based only on symmetry considerations. We find that there are 8 biasing coefficients through second order. We find streaming velocity-induced shifts in the BAO scale of 0.081%–0.149% (transverse direction) and 0.053%–0.058% (radial direction), depending on the model for the biasing coefficients used. These are smaller than, but not negligible compared to, the DESI Lyman- α BAO error budget, which is 0.46% on the overall scale. Overall, the sensitivity of these results to our choice of bias parameters underscores the need for future work to measure the higher-order biasing coefficients from simulations, especially for future experiments beyond DESI.

79 ASTRONOMY AND ASTROPHYSICS↗

Acceleration of Pd-V intermetallic diffusion by hydrogen

Vanadium-based membranes have great potential for hydrogen purification due to their perfect selectivity, high permeability, and relatively low cost. With appropriate surface cleaning, V efficiently permeates hydrogen at elevated temperature, but performance declines due to its affinity to absorb impurities. Here, the application of palladium thin films maintains a clean surface that catalyzes hydrogen dissociation and recombination. Hydrogen permeation in Pd-V-Pd membranes initially reach theoretical permeability, but declines due to Pd-V interdiffusion. The objective of this work was to quantify the intermetallic diffusion process as a function of temperature and ambient. Pd-V composites were subjected to various annealing treatments and characterized using Auger electron spectroscopy, X-ray diffraction, and energy dispersive X-ray spectroscopy, as well as correlated to measurements of membrane permeability. In an inert environment Pd-V interdiffusion was observable as low as 300 °C, and the diffusion coefficient had an activation energy of 44 kJ/mol. Furthermore, the presence of hydrogen at partial pressures > 10 kPa accelerated interdiffusion six-fold at T = 400 °C. Membrane performance degraded with an activation energy 75 kJ/mol, suggesting that intermetallic diffusion leads to both a loss of catalytic activity and as well as degradation of bulk permeability. These findings provide a baseline for evaluating hydrogen permeable interdiffusion barriers to overcome these challenges.

08 HYDROGEN↗

Quantum efficiency of InGaN–GaN multi-quantum well solar cells: Experimental characterization and modeling

InGaN-based multi-quantum well (MQW) solar cells are promising devices for photovoltaics (e.g., for tandem solar cells and concentrator systems), space applications, and wireless power transfer. In order to improve the efficiency of these devices, the factors limiting their efficiency and stability must be investigated in detail. Due to the complexity of a MQW structure, compared with a simple pn junction, modeling the spectral response of these solar cells is not straightforward, and ad hoc methodologies must be implemented. In this paper, we propose a model, based on material parameters and closed-formula equations, that describes the shape of the quantum efficiency of InGaN/GaN MQW solar cells, by taking into account the layer thickness, the temperature dependence of the absorption coefficient, and quantum confinement effects. We demonstrate (i) that the proposed model can effectively reproduce the spectral response of the cells; in addition, (ii) we prove that the bulk p-GaN layer absorbs radiation, but the carriers photogenerated in this region do not significantly contribute to device current. Finally, we show that (iii) by increasing the temperature, there is a redshift of the absorption edge due to bandgap narrowing, which can be described by Varshni law and is taken into account by the model, and a lowering in the extraction efficiency due to the increase in recombination (mostly Shockley–Read–Hall) inside the quantum wells, which is also visible by decreasing light intensity.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Electron ITB formation in EAST high poloidal beta plasmas under dominant electron heating

Abstract Plasma confinement and transport in tokamaks play a crucial role in the development of high poloidal beta steady-state operation scenarios. Therefore, it is very important to study the relevant mechanism of internal transport barriers (ITBs), which can help plasmas to obtain better confinement in order to achieve higher fusion gain. This paper mainly introduces the analysis of the characteristics of electron heat transport of discharges with ITB in high β P operation regime in Experimental Advanced Superconducting Tokamak (EAST). Based on the statistical analysis of stable discharges with β P > 1.5, it is found that there is an obvious bifurcation of the normalised electron temperature gradient (ETG) ( R / L T e ) in the range of β P = 2–2.2. Then the discharges of lower β P ( β P < 2, where the value of β P is below the bifurcation threshold) and of higher β P ( β P > 2.2, where the value of β P is above the threshold) were selected for analysis. The diagnostic data provided by Thomson scattering, x-ray crystal spectrometry and charge exchange recombination spectroscopy are used to provide reliable parameter profiles and then combined with the data of external magnetic probe measurements and the polarisation interferometer diagnosis system to fully reconstruct the balance. A relevant plasma current calculation model is used to calculate and analyse the current density profiles and power deposition, and then the transport analysis is carried out. Interestingly, in the higher β P discharges, it is found that the turbulence intensity provided by the CO 2 laser collective scattering system gradually decreases and the normalised ETG R / L T e gradually increases. It is also found that the electron heat transport coefficient decreases in the discharge with higher β P and the growth rate of the electron-scale turbulence calculated by transport gyro-Landau fluid (TGLF) is significantly reduced. Meanwhile, similar conclusions are also obtained in the discharges when the β P is further increased.

Wang, Z. H. (ORCID:0009000203431036)↗