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Radiation tests of highly scaled, high-density, commercial, nonvolatile NAND flash memories— update 2012

The space radiation environment poses a certain risk to all electronic components on Earth-orbiting and planetary mission spacecraft. In recent years, there has been increased interest in the use of high-density, commercial, nonvolatile flash memories in space because of ever-increasing data volumes and strict power requirements. They are used in a wide variety of spacecraft subsystems. At one end of the spectrum, flash memories are used to store small amounts of mission-critical data such as boot code or configuration files and, at the other end, they are used to construct multi-gigabyte data recorders that record mission science data. This report examines single-event effect (SEE) and total ionizing dose (TID) response in single-level cell (SLC) 32-Gb, multi-level cell (MLC) 64-Gb, and Triple-level (TLC) 64-Gb NAND flash memories manufactured by Micron Technology with feature size of 25 nm.

Allen, Gregory R.

Radiation Testing Electronics with Heavy Ions-The Best Way to Hit a Target Moving Ever Exponentially Faster

In 1972, when engineers at Hughes Aircraft Corporation discovered that errors in their satellite avionics were being caused by cosmic rays (so-called single-event effects, or SEE), Moore's Law was only 7 years old. Now, more than 45 years on, the scaling that drove Moore's Law for its first 35 years has reached its limits. However, electronics technology continues to evolve exponentially and SEE remain a formidable issue for use of electronics in space. SEE occur when a single ionizing particle passes through a sensitive volume in an active semiconductor device and generates sufficient charge to cause anomalous behavior or failure in the device. Because SEE can occur at any time during the mission, the emphasis of SEE risk management methodologies is ensuring that all SEE modes in a device under test are detected by the test. Because a particle's probability of causing an SEE generally increases as the particle becomes more ionizing, heavy-ion beams have been and remain the preferred tools for elucidating SEE vulnerabilities. In this talk we briefly discuss space radiation environments and SEE mechanisms, describe SEE test methodologies and discuss current and future challenges for use of heavy-ion beams for SEE testing in an era when the continued validity of Moore's law depends on innovation rather than CMOS scaling.

space radiation environments

Non Volatile Flash Memory Radiation Tests

Commercial flash memory industry has experienced a fast growth in the recent years, because of their wide spread usage in cell phones, mp3 players and digital cameras. On the other hand, there has been increased interest in the use of high density commercial nonvolatile flash memories in space because of ever increasing data requirements and strict power requirements. Because of flash memories complex structure; they cannot be treated as just simple memories in regards to testing and analysis. It becomes quite challenging to determine how they will respond in radiation environments.

single event upset results

Impact of Total Ionizing Dose Radiation Testing and Long-Term Thermal Cycling on the Operation of CMF20120D Silicon Carbide Power MOSFET

Power systems designed for use in NASA space missions are required to work reliably under harsh conditions including radiation, thermal cycling, and extreme temperature exposures. Silicon carbide devices show great promise for use in future power electronics systems, but information pertaining to performance of the devices in the space environment is very scarce. A silicon carbide N-channel enhancement-mode power MOSFET called the CMF20120 is of interest for use in space environments. Samples of the device were exposed to radiation followed by long-term thermal cycling to address their reliability for use in space applications. The results of the experimental work are presentd and discussed.

thermal cycling tests

Radiation Tests of the Extravehicular Mobility Unit Space Suit for the International Space Station Using Energetic Protons

Measurements using silicon detectors to characterize the radiation transmitted through the EMU space suit and a human phantom have been performed using 155 and 250 MeV proton beams at LLUMC. The beams simulate radiation encountered in space, where trapped protons having kinetic energies on the order of 100 MeV are copious. Protons with 100 MeV kinetic energy and above can penetrate many centimeters of water or other light materials, so that astronauts exposed to such energetic particles will receive doses to their internal organs. This dose can be enhanced or reduced by shielding - either from the space suit or the self-shielding of the body - but minimization of the risk depends on details of the incident particle flux (in particular the energy spectrum) and on the dose responses of the various critical organs. Data were taken to characterize the beams and to calibrate the detectors using the beam in a treatment room at LLUPTF, in preparation for an experiment with the same beams incident on detectors placed in a human phantom within the EMU suit. Nuclear interactions of high-energy protons in various materials produce a small flux of highly ionizing, low-energy secondary radiation. Secondaries are of interest for their biological effects, since they cause doses and especially dose-equivalents to increase relative to the values expected simply from ionization energy loss along the Bragg curve. Because many secondaries have very short ranges, they are best measured in passive track detectors such as CR-39. The silicon detector data presented here are intended to supplement the CR-39 data in regions where silicon has greater sensitivity, in particular the portion of the LET spectrum below 5 keV/micron. The results obtained in this study suggest that optimizing the radiation shielding properties of space suits is a formidable task. The naive assumption that adding mass can reduce risk is not supported by the data, which show that reducing the dose delivered at or near the skin by low-energy particles may increase the dose delivered by energetic particles to points deeper in the body.

Zeitlin, C.

Proton radiation testing of an 18 bit A/D converter

An 18-bit first order incremental analog to digital converter (ADC) has been constructed in a 2 mu commercial CMOS process. The ADC was exposed to energetic protons at the Harvard Cyclotron Laboratory to simulate latch-up and noise behavior in low earth orbits. Results of the test indicate no latch-up problems and only a small loss in accuracy while operating in proton radiation with energies similar to the South Atlantic Anomaly.

Thelen, Donald C.

Preliminary Radiation Testing of a State-of-the-Art Commercial 14nm CMOS Processor - System-on-a-Chip

Hardness assurance test results of Intel state-of-the-art 14nm Broadwell U-series processor System-on-a-Chip (SoC) for total dose are presented, along with first-look exploratory results from trials at a medical proton facility. Test method builds upon previous efforts by utilizing commercial laptop motherboards and software stress applications as opposed to more traditional automated test equipment (ATE).

14nm

Shock Radiation Tests for Saturn and Uranus Entry Probes

This paper describes a test series in the Electric Arc Shock Tube at NASA Ames Research Center with the objective of quantifying shock-layer radiative heating magnitudes for future probe entries into Saturn and Uranus atmospheres. Normal shock waves are measured in Hydrogen/Helium mixtures (89:11 by mole) at freestream pressures between 13-66 Pa (0.1-0.5 Torr) and velocities from 20-30 km/s. No shock layer radiation is detected below 25 km/s, a finding consistent with predictions for Uranus entries. Between 25-30 km/s, radiance is quantified from the Vacuum Ultraviolet through Near Infrared, with focus on the Lyman-alpha and Balmer series lines of Hydrogen. Shock profiles are analyzed for electron number density and electronic state distribution. The shocks do not equilibrate over several cm, and distributions are demonstrated to be non-Boltzmann. Radiation data are compared to simulations of Decadal survey entries for Saturn and shown to be significantly lower than predicted with the Boltzmann radiation model.

Saturn Probe

Shock Radiation Tests for Saturn and Uranus Entry Probes

This paper describes a test series in the Electric Arc Shock Tube at NASA Ames Research Center with the objective of quantifying shock-layer radiative heating magnitudes for future probe entries into Saturn and Uranus atmospheres. Normal shock waves are measured in Hydrogen-Helium mixtures (89:11 by volume) at freestream pressures between 13-66 Pa (0.1-0.5 Torr) and velocities from 20-30 kms. No shock layer radiation is detected within measurement limits below 25 kms, a finding consistent with predictions for Uranus entries. Between 25-30 kms, radiance is quantified from the Vacuum Ultraviolet through Near Infrared, with focus on the Lyman-a and Balmer series lines of Hydrogen. Shock profiles are analyzed for electron number density and electronic state distribution. The shocks do not equilibrate over several cm, and in many cases the state distributions are non-Boltzmann. Radiation data are compared to simulations of Decadal Survey entries for Saturn and shown to be as much as 8x lower than predicted with the Boltzmann radiation model. Radiance is observed in front of the shock layer, the characteristics of which match the expected diffusion length.

Hydrogen

Preliminary Radiation Testing of a State-of-the-Art Commercial 14nm CMOS Processor/System-on-a-Chip

Hardness assurance test results of Intel state-of-the-art 14nm “Broadwell” U-series processor / System-on-a-Chip (SoC) for total ionizing dose (TID) are presented, along with exploratory results from trials at a medical proton facility. Test method builds upon previous efforts [1] by utilizing commercial laptop motherboards and software stress applications as opposed to more traditional automated test equipment (ATE).

microprocessor

Radiation testing of composite materials, in situ versus ex situ effects

The effect of post irradiation test environments on tensile properties of representative advanced composite materials (T300/5208, T300/934, C6000/P1700) was investigated. Four ply (+ or - 45 deg/+ or - 45 deg) laminate tensile specimens were exposed in vacuum up to a bulk dose of 1 x 10 to the 10th power rads using a mono-energetic fluence of 700 keV electrons from a Van de Graaff accelerator. Post irradiation testing was performed while specimens were being irradiated (in situ data), in vacuum after cessation of irradiation (in vacuo data), and after exposure to air (ex situ data). Room temperature and elevated temperature effects were evaluated. The radiation induced changes to the tensile properties were small. Since the absolute changes in tensile properties were small, the existance of a post irradiation test environment effect was indeterminate.

Kurland, R. M.

Radiation Tests on 2Gb NAND Flash Memories

We report on SEE and TID tests of highly scaled Samsung 2Gbits flash memories. Both in-situ and biased interval irradiations were used to characterize the response of the total accumulated dose failures. The radiation-induced failures can be categorized as followings: single event upset (SEU) read errors in biased and unbiased modes, write errors, and single-event-functional-interrupt (SEFI) failures.

NAND circuits

Radiation tests of highly scaled high density commercial nonvolatile NAND flash memories update 2009

Heavy ion single-event measurements on a variety of high density commercial NAND flash memories are reported. Three single event effect (SEE) phenomena are examined: single effect upsets (SEUs), single event functional interrupts (SEFIs), and catastrophic loss of ability to erase and program the device. Also, radiation results of multilevel flash technology are compared with results from single-level flash technology. These commercial high density memories appear to be much less susceptible to SEE and have better TID response compared to older generations of flash memories. The single-level devices are less sensitive to SEUs than multi-level devices. The charge pump in this study survived up to 600 krads. A new high current phenomenon in high density NAND flash memories is also discussed.

Nguyen, Duc N.

Recent Radiation Test Results on a 22FDX Test Vehicle

Total ionizing dose irradiations were performed on a 22 nm fully-depleted silicon-on-insulator static random access memory. There is a strong well-bias effect in the TID response. Combined TID and SEE results are also presented.

total ionizing dose

Recent Radiation Test Results on a 22FDX Test Vehicle

Total ionizing dose irradiations were performed on a 22 nm fully-depleted silicon-on-insulator static random access memory. There is a strong well-bias effect in the TID response. Combined TID and SEE results are also presented.

total ionizing dose