Technology development for future origins and SEU missions
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technology development↗
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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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SEU mitigation testing of Xilinx Virtex II FPGAs
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SEE testing↗
SEU and Test Considerations for FPGA Devices
This viewgraph presentation provides an overview of Field Programmable Gate Arrays (FPGAs), what they are, implementations in space missions, and current available technologies. Single Event Upsets (SEUs) and Single Event Transients (SETs) are discussed in relation to their effects on FPGAs. Testing goals, considerations, and data analysis are reviewed.
Berg, Malanie↗
VIRTEX-4 VQ static SEU Characterization Summary
This report is the result of the combined efforts of members within the Xilinx Radiation Test Consortium (XRTC), sometimes known as the Xilinx SEE Test Consortium. The XRTC is a voluntary association of aerospace entities, including leading aerospace companies, universities and national laboratories, combining resources to characterize reconfigurable FPGAs for aerospace applications. Previous publications of Virtex-4 radiation results are for commercial (non-epitaxial) devices; see, for example, Refs. 1-4. A notable exception is Ref. 5, which presents XRTC upset measurements of storage elements in the PowerPC405s in the XQR4VFX60. This report of upset susceptibility to heavy ions and protons of the static memory elements in the Virtex-4QV family is a direct parallel to the XRTC report on the thin epitaxial devices in the Virtex-2 family released four years ago.
field programmable gate array (FPGA)↗
Effectiveness of Internal vs. External SEU Scrubbing Mitigation Strategies in a Xilinx FPGA: Design, Test, and Analysis
We compare two scrubbing mitigation schemes for Xilinx FPGA devices. The design of the scrubbers is briefly discussed along with an examination of mitigation limitations. Proton and Heavy Ion data are then presented and analyzed.
Berg, Melanie↗
Determining the Best-Fit FPGA for a Space Mission: An Analysis of Cost, SEU Sensitivity,and Reliability
This viewgraph presentation reviews the selection of the optimum Field Programmable Gate Arrays (FPGA) for space missions. Included in this review is a discussion on differentiating amongst various FPGAs, cost analysis of the various options, the investigation of radiation effects, an expansion of the evaluation criteria, and the application of the evaluation criteria to the selection process.
Berg, Melanie↗
SEU Analysis of Complex Circuits Implemented in Actel RTAX-S FPGA Devices
No abstract available
Berg, Melanie↗
Estimates of SEU rates from heavy ions in devices exhibiting dual-node susceptibility
A single-event effect (SEE) occurs when a single ionizing particle passing through an electronic device produces a detectable event in the device. The type of SEE most frequently discussed in the literature is a "single-node upset" problem in which an upset at a given node depends only on conditions seen by that node. In contrast, some devices are designed so that an upset becomes a "dual-node" problem in which a device upset depends on conditions simultaneously seen by two nodes. This report derives a method for estimating heavy-ion induced upset rates for the dual-node problem.
Edmonds, Larry D.↗
NASA Education Forum at SAO on the Structure and Evolution of the Universe
NASA's Structure and Evolution of the Universe (SEU) science theme offers an unparalleled opportunity to capture the public's imagination and inspire the next generation of scientific explorers-the generation that will determine America's lead in science and technology in the 21st century. The missions and research programs of SEU science are transporting the public to some of the universe's most exotic destinations: the beginning of time, the edge of space at the entrance to a black hole, and the great cycles of matter and energy that have slowly brought life to the universe. NASA's Office of Space Science (OSS) has put in place an Education and Public Outreach (EPO) initiative designed to do just that. Spanning all of NASA's OSS science themes, the initiative is a far-reaching partnership with the education community. As a result, NASA space science now reaches every avenue of education-from the nation's schools, science museums and planetariums, to libraries, community groups and after-school programs. As a partner in this enterprise, the,SEU Forum has successfully brought SEU science to a large and diverse audience. But this is an ongoing process, and much still needs to be done. Working with our colleagues in the OSS Support Network, and with our partners in the space science and education communities, we look forward to ensuring that the public supports and participates in the great explorations of the SEU theme. Working with the SEU missions and members of the OSS Support Network, the Forum will harness the assets of the SEU science community to: Inform, inspire, and involve the public in the explorations of the SEU science theme. Use the unique resources of the SEU science theme to enhance K-14 science, technology, and mathematics education. Identify and develop high-leverage opportunities for the SEU science community to contribute to education and outreach.
Rosendhal, Jeffrey↗
Solar Particle Induced Upsets in the TDRS-1 Attitude Control System RAM During the October 1989 Solar Particle Events
The three large solar particle events, beginning on October 19, 1989 and lasting approximately six days, were characterized by high fluences of solar protons and heavy ions at 1 AU. During these events, an abnormally large number of upsets (243) were observed in the random access memory of the attitude control system (ACS) control processing electronics (CPE) on-board the geosynchronous TDRS-1 (Telemetry and Data Relay Satellite). The RAM unit affected was composed of eight Fairchild 93L422 memory chips. The Galileo spacecraft, launched on October 18, 1989 (one day prior to the solar particle events) observed the fluxes of heavy ions experienced by TDRS-1. Two solid-state detector telescopes on-board Galileo, designed to measure heavy ion species and energy, were turned on during time periods within each of the three separate events. The heavy ion data have been modeled and the time history of the events reconstructed to estimate heavy ion fluences. These fluences were converted to effective LET spectra after transport through the estimated shielding distribution around the TDRS-1 ACS system. The number of single event upsets (SEU) expected was calculated by integrating the measured cross section for the Fairchild 93L422 memory chip with average effective LET spectrum. The expected number of heavy ion induced SEU's calculated was 176. GOES-7 proton data, observed during the solar particle events, were used to estimate the number of proton-induced SEU's by integrating the proton fluence spectrum incident on the memory chips, with the two-parameter Bendel cross section for proton SEU'S. The proton fluence spectrum at the device level was gotten by transporting the protons through the estimated shielding distribution. The number of calculated proton-induced SEU's was 72, yielding a total of 248 predicted SEU'S, very dose to the 243 observed SEU'S. These calculations uniquely demonstrate the roles that solar heavy ions and protons played in the production of SEU's during the October 1989 solar particle events.
Croley, D. R.↗
Accelerators for critical experiments involving single-particle upset in solid-state microcircuits
Charged-particle interactions in microelectronic circuit chips (integrated circuits) present a particularly insidious problem for solid-state electronic systems due to the generation of soft errors or single-particle event upset (SEU) by either cosmic rays or other radiation sources. Particle accelerators are used to provide both light and heavy ions in order to assess the propensity of integrated circuit chips for SEU. Critical aspects of this assessment involve the ability to analytically model SEU for the prediction of error rates in known radiation environments. In order to accurately model SEU, the measurement and prediction of energy deposition in the form of an electron-hole plasma generated along an ion track is of paramount importance. This requires the use of accelerators which allow for ease in both energy control (change of energy) and change of ion species. This and other aspects of ion-beam control and diagnostics (e.g., uniformity and flux) are of critical concern for the experimental verification of theoretical SEU models.
Zoutendyk, J. A.↗
Evaluation of the Radiation Susceptibility of a 3D NAND Flash Memory
We evaluated the heavy ion and proton-induced single-event effects (SEE) for a 3D NAND flash. The 3D NAND showed similar single-event upset (SEU) sensitivity to a planar NAND of similar density and performance in the multiple-cell level (MLC) storage mode. However, the single-level-cell (SLC) storage mode of the 3D NAND showed significantly reduced SEU susceptibility. Additionally, the 3D NAND showed less MBU susceptibility than the planar NAND, with reduced number of upset bits per byte and reduced cross sections overall. However, the 3D architecture exhibited angular sensitivities for both base and face angles, reflecting the anisotropic nature of the SEU vulnerability in space. Furthermore, the SEU cross section decreased with increasing fluence for both the 3D NAND and the latest generation planar NAND, indicating a variable upset rate for a space mission. These unique characteristics introduce complexity to traditional ground irradiation test procedures.
single-event upset (SEU)↗
Analyzing System on A Chip Single Event Upset Responses using Single Event Upset Data, Classical Reliability Models, and Space Environment Data
We are investigating the application of classical reliability performance metrics combined with standard single event upset (SEU) analysis data. We expect to relate SEU behavior to system performance requirements. Our proposed methodology will provide better prediction of SEU responses in harsh radiation environments with confidence metrics. single event upset (SEU), single event effect (SEE), field programmable gate array devises (FPGAs)
single event effect (SEE)↗
Heavy Ion and Proton-Induced Single Event Upset Characteristics of a 3D NAND Flash Memory
We evaluated the effects of heavy ion and proton irradiation for a 3D NAND flash. The 3D NAND showed similar single-event upset (SEU) sensitivity to a planar NAND of identical density in the multiple-cell level (MLC) storage mode. The 3D NAND showed significantly reduced SEU susceptibility in single-level-cell (SLC) storage mode. Additionally, the 3D NAND showed less multiple-bit upset susceptibility than the planar NAND, with fewer number of upset bits per byte and smaller cross sections overall. However, the 3D architecture exhibited angular sensitivities for both base and face angles, reflecting the anisotropic nature of the SEU vulnerability in space. Furthermore, the SEU cross section decreased with increasing fluence for both the 3D NAND and the Micron 16 nm planar NAND, which suggests that typical heavy ion test fluences will underestimate the upset rate during a space mission. These unique characteristics introduce complexity to traditional ground irradiation test procedures.
3D NAND Flash memory; radiation susceptibility; si↗
Single event effects and laser simulation studies
The single event upset (SEU) linear energy transfer threshold (LETTH) of radiation hardened 64K Static Random Access Memories (SRAM's) was measured with a picosecond pulsed dye laser system. These results were compared with standard heavy ion accelerator (Brookhaven National Laboratory (BNL)) measurements of the same SRAM's. With heavy ions, the LETTH of the Honeywell HC6364 was 27 MeV-sq cm/mg at 125 C compared with a value of 24 MeV-sq cm/mg obtained with the laser. In the case of the second type of 64K SRAM, the IBM640lCRH no upsets were observed at 125 C with the highest LET ions used at BNL. In contrast, the pulsed dye laser tests indicated a value of 90 MeV-sq cm/mg at room temperature for the SEU-hardened IBM SRAM. No latchups or multiple SEU's were observed on any of the SRAM's even under worst case conditions. The results of this study suggest that the laser can be used as an inexpensive laboratory SEU prescreen tool in certain cases.
Kim, Q.↗
An Examination of Environment Perturbation Effects on Single Event Upset Rates
This paper presents an analysis of the sensitivity of single event upset (SEU) rate predictions to changes in the direct ionization-inducing environment. An examination based on the nature of the SEU rate equation is presented for the case in which the perturbation is constant across varying particle linear energy transfer (LET). It is shown that the relative variation in SEU rate is equal to the relative perturbation in flux. Results are also presented for the case in which the environment perturbations exist in small LET bins. Through this analysis it is shown that the relative variation in expected SEU rate is equal to that in flux only for the LET regime in which the product of the cross section and differential flux is maximum.
Gates, Michele M.↗
SRAM Based Re-programmable FPGA for Space Applications
An SRAM (static random access memory)-based reprogrammable FPGA (field programmable gate array) is investigated for space applications. A new commercial prototype, named the RS family, was used as an example for the investigation. The device is fabricated in a 0.25 micrometers CMOS technology. Its architecture is reviewed to provide a better understanding of the impact of single event upset (SEU) on the device during operation. The SEU effect of different memories available on the device is evaluated. Heavy ion test data and SPICE simulations are used integrally to extract the threshold LET (linear energy transfer). Together with the saturation cross-section measurement from the layout, a rate prediction is done on each memory type. The SEU in the configuration SRAM is identified as the dominant failure mode and is discussed in detail. The single event transient error in combinational logic is also investigated and simulated by SPICE. SEU mitigation by hardening the memories and employing EDAC (error detection and correction) at the device level are presented. For the configuration SRAM (CSRAM) cell, the trade-off between resistor de-coupling and redundancy hardening techniques are investigated with interesting results. Preliminary heavy ion test data show no sign of SEL (single event latch-up). With regard to ionizing radiation effects, the increase in static leakage current (static I(sub CC)) measured indicates a device tolerance of approximately 50krad(Si).
Wang, J. J.↗
The NASA Education Forum at SAO on the Structure and Evolution of the Universe
During the past year the SEU Forum has made significant progress on a number of fronts: (1) the Forum has brought several large education projects close to completion; (2) we have greatly expanded our relationship with the SEU missions and programs; and (3) we have started a significant program to better involve space scientists in education and outreach activities. Among our accomplishments for the past year: (1) completed planning and design for Cosmic Questions, a national traveling exhibition on SEU themes; (2) launched the informal Science Education Resource Directory; (3) Coordinating with the SEU and Origins missions; and (4) promoted scientist-educator partnerships.
Gould, Roy↗