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Results for “SILICON RADIATION DETECTORS”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
NASA NTRS1982

Imaging antenna array at 119 microns

A focal-plane imaging antenna array has been demonstrated at 119 microns. The array is a line of evaporated silver bow-tie antennas with bismuth microbolometer detectors on a silicon substrate. Radiation is coupled into the array by a lens placed on the back of the substrate. The bolometers are thermally isolated from the silicon substrate with a half-micron layer of polyimide. The array performance is demonstrated by coherent imaging of a series of holes at half the diffraction-limited cut-off frequency.

Neikirk, N. P.↗
NASA NTRS1989

Laboratory characterization of direct readout Si:Sb and Si:Ga infrared detector arrays

Highlights of recent results obtained at Ames Research Center in performance evaluations of infrared detector arrays are presented. Antimony- and gallium-doped silicon direct readout 58x62 element hybrid devices from Ames' ongoing detector technology development program are described. The observed characteristics meet most of the performance goals specified by the Space Infrared Telescope Facility (SIRTF) instrument teams and compare favorably with the best performance reported for discrete non-integrating extrinsic silicon detectors. Initial results of radiation environment testing are reported, and non-ideal behavior demonstrated by these test devices is discussed.

Mckelvey, Mark E.↗
NASA NTRS1995

The development of infrared detectors and mechanisms for use in future infrared space missions

The environment above earth's atmosphere offers significant advantages in sensitivity and wavelength coverage in infrared astronomy over ground-based observatories. In support of future infrared space missions, technology development efforts were undertaken to develop detectors sensitive to radiation between 2.5 micron and 200 micron. Additionally, work was undertaken to develop mechanisms supporting the imaging and spectroscopy requirements of infrared space missions. Arsenic-doped-Silicon and Antimony-doped-Silicon Blocked Impurity Band detectors, responsive to radiation between 4 micron and 45 micron, were produced in 128x128 picture element arrays with the low noise, high sensitivity performance needed for space environments. Technology development continued on Gallium-doped-Germanium detectors (for use between 80 micron and 200 micron), but were hampered by contamination during manufacture. Antimony-doped-Indium detectors (for use between 2.5 micron and 5 micron) were developed in a 256x256 pixel format with high responsive quantum efficiency and low dark current. Work began on adapting an existing cryogenic mechanism design for space-based missions; then was redirected towards an all-fixed optical design to improve reliability and lower projected mission costs.

Houck, James R.↗
NASA NTRS2003

High-energy neutron spectroscopy with thick silicon detectors

The high-energy neutron component of the space radiation environment in thick structures such as the International Space Station contributes to the total radiation dose received by an astronaut. Detector design constraints such as size and mass have limited the energy range of neutron spectrum measurements in orbit to about 12 MeV in Space Shuttle studies. We present a new method for high-energy neutron spectroscopy using small silicon detectors that can extend these measurements to more than 500 MeV. The methodology is based on measurement of the detector response function for high-energy neutrons and inversion of this response function with measured deposition data to deduce neutron energy spectra. We also present the results of an initial shielding study performed with the thick silicon detector system for high-energy neutrons incident on polyethylene.

Non-NASA Center↗
NASA NTRS1972

Methods of measurement for semiconductor materials, process control, and devices

Activities directed toward the development of methods of measurement for semiconductor materials, process control, and devices are described. Topics investigated include: measurements of transistor delay time; application of the infrared response technique to the study of radiation-damaged, lithium-drifted silicon detectors; and identification of a condition that minimizes wire flexure and reduces the failure rate of wire bonds in transistors and integrated circuits under slow thermal cycling conditions. Supplementary data concerning staff, standards committee activities, technical services, and publications are included as appendixes.

Bullis, W. M.↗
NASA NTRS1972

A high resolution semiconductor detector for applications in space

Nuclear radiation detectors with volumes of approximately 1 cu cm was fabricated from single crystals of germanium-silicon alloy containing as much as 20 weight percent germanium. The properties of these detectors were investigated and will be discussed. Tests reveal that the gamma ray photoelectric peak efficiency of an alloy detector with only 12 weight percent germanium is approximately 4 times that of a silicon detector of equal volume. The room temperature roomure appears to be a good possibility. Storage for long periods at room temperature does not seem to adversely affect these devices. The results of preliminary radiation damage experiments suggest that the alloy detectors possess a radiation damage resistance far greater than that of silicon.

Alexander, P.↗
DOE OSTI2020

Effects of trapped charge on the signal formation and detection efficiency for subsequent pulses in irradiated silicon sensors

Envisaged high energy physics experiments like the Future Circular Collider require unprecedented radiation hardness of the detectors, as well as short readout time due to high luminosity and occupancy. Silicon has proven to be extremely radiation hard. Sufficient signals can be recorded even at fluences close to 1 ∙ 1 0 16 n e q / cm 2 . Here, the signal formation was studied in silicon strip sensors, irradiated and annealed until the phenomenon of charge multiplication occurred. ATLAS12EC R0 mini sensors were tested by means of edge TCT measurements at temperatures around –20 °C. It was observed that the detection of subsequent signals separated up to several microseconds is altered by the charge trapped during the preceding pulses. The effects of trapped charge on the electrical configuration of a sensor are well known as a polarization or pumping effect in larger band-gap materials like diamond, but is often neglected for silicon at this relatively high temperature. The investigation of the effect created by trapped charges in silicon sensors using subsequent pulses allows to gain information on important parameters such as de-trapping times. Furthermore, it shows a severe impact on the sensor performance in a pile-up scenario. The irradiation fluence and hence the effective doping concentration, the temperature and the amount of initially created charge have a large impact on this phenomenon. The measurements presented help to characterize this phenomenon; particular attention was paid to the application point of view.

47 OTHER INSTRUMENTATION↗
NASA NTRSDate not supplied

Advanced Radiation Detectors and Detector Systems Research

Real‐time awareness of space radiation is critical for missions beyond LEO. Missions to the Moon, Mars, Near‐Earth‐Objects (NEOs), inner and outer planets, as well as other destinations in space, will require embedded instrumentation to provide feedback for “smart”, adaptive control systems. Precision instrumentation will also be needed to provide improved data for space radiation modeling and space weather forecasting and awareness. Compact instrumentation on small platforms such as CubeSats and other small space‐faring vehicles will provide a better understanding of the space radiation environment by supplying data from multiple locations in space where information is yet unknown. Compact integrable solid‐state detectors with low noise and high tolerance of operation in a radiation environment are enabled by the application of Wide Band Gap semiconductors as radiation detectors. NASA Glenn Research Center (GRC) is applying its expertise and facilities in harsh environment instrumentation to develop supporting technologies that enable improved instruments for space science missions. A variety of radiation detectors are under development, such as silicon carbide semiconductor detectors, for applications to space science, lunar prospecting, and fission power systems.

Field and particle detectors↗
DOE OSTI2020

Cosmogenic activation of silicon

In the production of 3 H, 7 Be, and 22 Na by interactions of cosmic-ray particles with silicon can produce radioactive backgrounds in detectors used to search for rare events. Through controlled irradiation of silicon CCDs and wafers with a neutron beam that mimics the cosmic-ray neutron spectrum, followed by direct counting, we determined that the production rate from cosmic-ray neutrons at sea level is (112 ± 24) atoms/( kg day ) for 3 H, (8.1 ± 1.9) atoms/( kg day ) for 7 Be, and (43.0 ± 7.2) atoms/( kg day ) for 22 Na . Complementing these results with the current best estimates of activation cross sections for cosmic-ray particles other than neutrons, we obtain a total sea-level cosmic-ray production rate of (124 ± 25) atoms/(kg day) for 3 H, (9.4 ± 2.0) atoms/( kg day ) for 7 Be, and (49.6 ± 7.4) atoms/( kg day ) for 22 Na. These measurements will help constrain background estimates and determine the maximum time that silicon-based detectors can remain unshielded during detector fabrication before cosmogenic backgrounds impact the sensitivity of next-generation rare-event searches.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2025

Modeling of surface-state induced inter-electrode isolation of n -on- p devices in mixed-field and γ -irradiation environments

Position sensitive n-on-p silicon sensors will be utilized in the tracker and in the High Granularity Calorimeter (HGCAL) of the Compact Muon Solenoid (CMS) experiment at High Luminosity Large Hadron Collider (HL-LHC). The detrimental effect of the radiation-induced accumulation of positive net oxide charge on position resolution in n-on-p sensors has typically been countered by the application of isolation implants like p-stop or p-spray between n + -electrodes. In addition to the positively charged layer inside the oxide and close to the Si/SiO 2 -interface, surface damage introduced by ionizing radiation in SiO 2 -passivated silicon particle detectors includes the accumulation of trapped-oxide-charge and interface traps. A previous study of either n/γ (mixed field)- or γ-irradiated Metal-Oxide-Semiconductor (MOS) capacitors showed evidence of substantially higher introduction rates of acceptor- and donor-type deep interface traps (N it,acc/don ) in mixed-field environment. Here, in this work, an inter-pad and -strip resistance (or resistivity (ρ int )) simulation study of n-on-p sensors with and without p-stop isolation implants was conducted for both irradiation types. Higher levels of ρint showed correlation to higher densities of deep N it,acc/don , with the inter-pad isolation performance of the mixed-field irradiated sensors becoming independent of the presence of p-stop implant between the n + - electrodes up to about 100 kGy. The low introduction rates of deep N it,acc/don in γ-irradiated sensors resulted in high sensitivity of ρ int to the presence and peak doping of p-stop above the lowest dose of about 7 kGy in the study. As a consequence of the advantageous influence of radiation-induced accumulation of deep N it on the inter-electrode isolation, position sensitive n-on-p sensors without isolation implants may be considered for future HEP-experiments where the radiation is largely due to hadrons.

Akchurin, N. [Texas Tech Univ., Lubbock, TX (Unite↗
DOE OSTI2023

Radiation, optical, power flow, and electrical diagnostics at the Z facility: Layout and techniques utilized to operate in the harsh environment

The Z machine is a current driver producing up to 30 MA in 100 ns that utilizes a wide range of diagnostics to assess accelerator performance and target behavior conduct experiments that use the Z target as a source of radiation or high pressures. Here, we review the existing suite of diagnostic systems, including their locations and primary configurations. The diagnostics are grouped in the following categories: pulsed power diagnostics, x-ray power and energy, x-ray spectroscopy, x-ray imaging (including backlighting, power flow, and velocimetry), and nuclear detectors (including neutron activation). We will also briefly summarize the primary imaging detectors we use at Z: image plates, x-ray and visible film, microchannel plates, and the ultrafast x-ray imager. The Z shot produces a harsh environment that interferes with diagnostic operation and data retrieval. We term these detrimental processes “threats” of which only partial quantifications and precise sources are known. Finally, we summarize the threats and describe techniques utilized in many of the systems to reduce noise and backgrounds.

47 OTHER INSTRUMENTATION↗
NASA NTRS2007

Tunable Antireflection Layers for Planar Bolometer Arrays

It remains a challenge to obtain high-efficiency coupling of far-infrared through millimeter radiation to large-format detector arrays. The conventional approach of increasing detector coupling is to use reflective backshorts. However, this approach often results in excessive systematic errors resulting from reflections off the backshort edge. An alternate approach to both increasing quantum efficiency and reducing systematics associated with stray light is to place an antireflective coating near the front surface of the array. When incorporated with a resistive layer and placed behind the detector focal plane, the AR coating can serve to prevent optical ghosting by capturing radiation transmitted through the detector. By etching a hexagonal pattern in silicon, in which the sizes of the hexes are smaller than the wavelength of incident radiation, it is possible to fabricate a material that has a controllable dielectric constant, thereby allowing for simple tunable optical device fabrication. To this end, we have fabricated and tested tunable silicon "honeycomb" AR layers and AR/resistive layer devices. These devices were fabricated entirely out of silicon in order to eliminate problems associated with differential contraction upon detector cooling.

Brown, Ari-David↗
NASA NTRS2003

Silicon Detector System for Cross Section Measurements

In order to estimate the radiation shielding effectiveness of materials it is necessary to know cosmic ray particles are broken up as they pass though these materials. The breakup of cosmic ray particles is characterized by the nuclear fragmentation cross sections, i.e. an effective geometrical cross section assigned to each target nucleus that represents its apparent size for fragmenting the incident particle. The values of these cross sections depend on the details of nuclear physics and cannot be calculated from first principles owing to the many-body nature of the interactions. The only way to determine them is to measure them. Once a sufficient number of cross sections have been measured, the systematic nature of the interactions allows other cross-sections to be estimated. The number of cross sections that contribute to the estimation of shielding effectiveness is very large 10,000. Fortunately most make minor contributions. These can be estimated from nuclear systematics. Only those who's uncertainties make significant contributions to the error in the shielding effectiveness estimations need to be measured. In the past it has proven difficult to measure light fragment production cross sections from the interactions of heavy cosmic rays owing to the size of the detectors used. We have developed a highly pixilated silicon (Si) detector system that can individually identify these light fragments while making efficient use of costly accelerator time. This system is an outgrowth of detector technology developed under a CDDF and a Code S sponsored cosmic ray experiment.

Source record↗
NASA NTRS2016

Multidirectional Cosmic Ray Ion Detector for Deep Space CubeSats

Understanding the nature of anisotropy of solar energetic protons (SEPs) and galactic cosmic ray (GCR) fluxes in the interplanetary medium is crucial in characterizing time-dependent radiation exposure in interplanetary space for future exploration missions. NASA Glenn Research Center has proposed a CubeSat-based instrument to study solar and cosmic ray ions in lunar orbit or deep space. The objective of Solar Proton Anisotropy and Galactic cosmic ray High Energy Transport Instrument (SPAGHETI) is to provide multi-directional ion data to further understand anisotropies in SEP and GCR flux. The instrument is to be developed using large area detectors fabricated from high density, high purity silicon carbide (SiC) to measure linear energy transfer (LET) of ions. Stacks of these LET detectors are arranged in a CubeSat at orthogonal directions to provide multidirectional measurements. The low-noise, thermally-stable nature of silicon carbide and its radiation tolerance allows the multidirectional array of detector stacks to be packed in a 6U CubeSat without active cooling. A concept involving additional coincidence/anticoincidence detectors and a high energy Cherenkov detector is possible to further expand ion energy range and sensitivity.

Extraterrestrial Radiation↗
NASA NTRS1989

Blocked impurity band hybrid infrared focal plane arrays for astronomy

High-performance infrared hybrid focal plane arrays using 10- x 50-element Si:As blocked-impurity-band (BIB) detectors (cutoff wavelength = 28 microns) and matching switched MOSFET multiplexers have been developed and characterized for space astronomy. Use of impurity-band-conduction technology provides detectors which are nuclear-radiation-hard and free of the many anomalies associated with conventional silicon photoconductive detectors. Emphasis in the present work is on recent advances in detector material quality which have led to significantly improved detector and hybrid characteristics. Results demonstrating increased quantum efficiency (particularly at short-wavelength infrared), obtained by varying the BIB detector properties (infrared active layer thickness and arsenic doping profile), are summarized. Measured read noise and dark current for different temperatures are reported. The hybrid array performance achieved demonstrates that BIB detectors are well suited for use in astronomical instrumentation.

Reynolds, D. B.↗