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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
DOE OSTI2015

Pressurized electrolysis stack with thermal expansion capability

The present techniques provide systems and methods for mounting an electrolyzer stack in an outer shell so as to allow for differential thermal expansion of the electrolyzer stack and shell. Generally, an electrolyzer stack may be formed from a material with a high coefficient of thermal expansion, while the shell may be formed from a material having a lower coefficient of thermal expansion. The differences between the coefficients of thermal expansion may lead to damage to the electrolyzer stack as the shell may restrain the thermal expansion of the electrolyzer stack. To allow for the differences in thermal expansion, the electrolyzer stack may be mounted within the shell leaving a space between the electrolyzer stack and shell. The space between the electrolyzer stack and the shell may be filled with a non-conductive fluid to further equalize pressure inside and outside of the electrolyzer stack.

08 HYDROGEN↗
DOE OSTI2022

Stacking Fault Induced Symmetry Breaking in van der Waals Nanowires

While traditional ferroelectrics are based on polar crystals in bulk or thin film form, two-dimensional and layered materials can support mechanisms for symmetry breaking between centrosymmetric building blocks, e.g., by creating low-symmetry interfaces in van der Waals stacks. Here, we introduce an approach toward symmetry breaking in van der Waals crystals that relies on the spontaneous incorporation of stacking faults in a nonpolar bulk layer sequence. The concept is realized in nanowires consisting of Se-rich group IV monochalcogenide (GeSe 1–x S x ) alloys, obtained by vapor–liquid–solid growth. The single crystalline wires adopt a layered structure in which the nonpolar A-B bulk stacking along the nanowire axis is interrupted by single-layer stacking faults with local A-A' stacking. Density functional theory explains this behavior by a reduced stacking fault formation energy in GeSe (or Se-rich GeSe 1–x S x alloys). Computations demonstrate that, similar to monochalcogenide monolayers, the inserted A-layers should show a spontaneous electric polarization with a switching barrier consistent with a Curie temperature above room temperature. Second-harmonic generation signals are consistent with a variable density of stacking faults along the wires. Here, our results point to possible routes for designing ferroelectrics via the layer stacking in van der Waals crystals.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Switching interlayer magnetic order in bilayer CrI 3 by stacking reversal

CrI 3 , a hot two-dimensional (2D) magnet, exhibits complex magnetism depending on the number of layers and interlayer stacking patterns. For bilayer CrI 3 , the interlayer magnetism can be tuned between ferromagnetic (FM) and antiferromagnetic (AFM) order by manipulating the stacking order. However, the stacking is mostly modified through translation between the layers, while the effect of rotation between the layers on the interlayer magnetic order has not yet been fully investigated. Here, we considered three energetically stable stacking patterns R$\bar3$ with combining macron], C2/m and AA in bilayer CrI 3 , and their reversed counterparts R$\bar3$ with combining macron]-r, C2/m-r and AA-r through rotating one layer by 180° with respect to the other layer. Our first-principles calculations suggest that the interlayer magnetic ground state can be switched from AFM to FM (or FM to AFM) by reversing the stacking pattern. A detailed microscopic analysis was carried out by magnetic force theory calculations on C2/m stacking which favors AFM and C2/m-r stacking which favors FM. The interlayer magnetic interactions and the origin of the magnetic order change were revealed through specific orbital analysis. Our work demonstrates that stacking rotation can also tune the interlayer magnetism of CrI 3 and provides insight into its interlayer magnetic properties at the microscopic level.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2017

A Direct Manufacturing Cost Model for Solid‐Oxide Fuel Cell Stacks

Abstract This work details efforts to estimate the direct manufacturing cost of solid oxide fuel cell (SOFC) stack components for combined heat and power applications. The main research goals are to identify the major contributors to fuel cell stack manufacturing costs, examine the influence of both production volume and stack size on cost, and compare the results of the cost trajectories with the U.S. Department of Energy SOFC stack manufacturing cost target of $238 kWe −1 (in 2015) and industry reported cost projections and to identify critical areas for manufacturing research and development. Stack component direct manufacturing costs are modeled for net electricity capacity of 1, 10, 50, 100 and 250 kWe across annual production volumes of 10, 1,000, 10,000 and 50,000 systems per year. Overall stack manufacturing costs range from $5,387 kWe −1 to a minimum of about $166 kWe −1 for a 250 kWe system at 50,000 systems per year. To meet the manufacturing cost target of $238 kWe −1 , a minimum annual production of 100–250 MWe per year would be required. Reduction opportunities for stack cost are expected to be available, mainly with the adoption of thinner cells and stack components, higher levels of factory automation, and more sensitive in‐line defect diagnostics.

Scataglini, R.↗
DOE OSTI2025

On the distribution of stacking faults at dissociated medium-angle grain boundaries: Crystallographic geometry and metastability

Grain boundaries in FCC metals with low stacking-fault energy can form in dissociated configurations of stacking faults. Perhaps the most studied example is 9R stacking at boundaries near Σ3{112}, where the distribution of stacking faults is related to the emission of Shockley partial dislocations. Here, we combine atomic-resolution electron microscopy, atomistic simulations, and dislocation theory to demonstrate that boundaries vicinal to Σ33a support the stabilization of dissociated 9R stacking within a narrow range of inclinations. This boundary is interesting since its misorientation (20.05°) lies in the medium-angle regime, just past the upper misorientation limit for low-angle boundaries, motivating questions for how best to describe it in terms of dislocations. Our HAADF-STEM observations of thin film bicrystals, supported by atomistic modeling, reveal that this inclination dependence arises from specific geometric constraints on the arrangement of Shockley partial dislocations at the interface. Quantification of stacking-fault distributions across multiple boundaries indicates that the density and spacing of faults closely follow the ideal 9R motif, with subtle variations reflecting the complex energy landscape of these boundaries. Through energetic analysis, we establish the presence of competing metastable states enabled by variations in stacking sequences, emphasizing the significant role of crystallographic geometry. We generalize our analysis as a function of misorientation, showing how 9R at the Σ33a boundary is related to previous observations and calculations of HCP at a 29.7° boundary. This study provides a crystallographically grounded framework connecting dislocation structures, stacking-fault distributions, and metastability at grain boundaries in FCC metals.

Atomistic modeling↗
DOE OSTI2023

The impact of stacking and phonon environment on energy transfer in organic chromophores: computational insights

Energy transfer in organic materials is extensively studied due to many applications in optoelectronics. The electronic and vibrational relaxations within molecular assemblies can be influenced by stacking arrangements or additions of a backbone that unites them. Here, we present the computational study of the photoexcitation dynamics of a perylene diimide monomer, and face-to-face stacked dimer and trimer. By using non-Energy transfer in organic materials is extensively studied due to many applications in optoelectronics. The electronic and vibrational relaxations within molecular assemblies can be influenced by stacking arrangements or additions of a backbone that unites them. In this work, we present the computational study of the photoexcitation dynamics of a perylene diimide monomer, and face-to-face stacked dimer and trimer. By using non-adiabatic excited-state molecular dynamics simulations, we show that the non-radiative relaxation is accelerated with the number of stacked molecules. This effect is explained by differences in the energy splitting between states that impacts their corresponding nonadiabatic couplings. Additionally, our analysis of the vibronic dynamics reveals that the passage through the different conical intersections that participate in the relaxation of the stacked systems, activate a positive feedback mechanism. This effect involves a narrow set of vibrational normal modes that accelerate the process by increasing the efficiency of its vibronic dynamics. In contrast, an addition of a biologically inspired backbone slows down the relaxation rate due to its participation in the vibronic dynamics of the molecular stacking arrangements. Our results suggest the stacking arrangements and common backbones as strategies to modulate the efficiency of electronic and vibrational relaxation of diimide-based systems and other molecular aggregates.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Large change of interlayer vibrational coupling with stacking in Mo 1-x W x Te 2

Stacking variations in quasi-two-dimensional materials can have an important influence on material properties, such as changing the topology of the band structure. Unfortunately, the weakness of van der Waals (vdW) interactions makes it difficult to compute the stacking dependence of properties, and even in a material as simple as graphite the stacking energetics remain unclear. Mo 1 - x W x Te 2 is a material in which three differently stacked phases are conveniently accessible by temperature changes: 1 T ' , T d * , and the reported Weyl semimetal phase T d . Additionally, the transitions proceed via layer sliding, and the corresponding interlayer shear mode (ISM) is relevant not just for the stacking energetics but also for understanding the relationship between Weyl physics and structural changes. However, the interlayer interactions of Mo 1 - x W x Te 2 are not well understood, with wide variation in computed properties. We report inelastic neutron scattering of the ISM in a Mo 0.91 W 0.09 Te 2 crystal. The ISM energies are generally consistent with the linear chain model, as expected given the weak interlayer interaction, though there are some discrepancies from predicted intensities. However, the interlayer force constants K x in the T d * and 1 T ' phases are substantially weaker than that of T d at 75(3) and 83(3)%, respectively. Considering that the relative positioning of atoms in neighboring layers is approximately the same regardless of overall stacking, our results suggest that longer-range influences, such as stacking-induced electronic band-structure changes, may be responsible for the substantial change in the interlayer vibrational coupling and thus the C 55 elastic constant. These findings should elucidate the stacking energetics of Mo 1 - x W x Te 2 and other vdW layered materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Stacking disorder and thermal transport properties of α-RuCl 3

α-RuCl 3 , a well-known candidate material for Kitaev quantum spin liquid, is prone to stacking disorder due to the weak van der Waals bonding between the honeycomb layers. After a decade of intensive experimental and theoretical studies, the detailed correlation between stacking degree of freedom, structure transition, magnetic, and thermal transport properties remains unresolved. In this work, we reveal the effects of a small amount of stacking disorder inherent even in high quality α-RuCl 3 crystals. This small amount of stacking disorder results in the variation of the magnetic ordering temperature, and it suppresses the structure transition and thermal conductivity. Crystals with a minimal amount of stacking disorder have a T N > 7.4 K and exhibit a well-defined structure transition around 140 K upon cooling. For those with more stacking faults and a T N below 7 K, the structure transition occurs well below 140 K upon cooling and is incomplete, manifested by the diffuse streaks and the coexistence of both high-temperature and low-temperature phases down to the lowest measurement temperature. Both types of crystals exhibit oscillatory field-dependent thermal conductivity and a plateaulike feature in thermal Hall resistivity in the field-induced quantum spin liquid state. However, α-RuCl 3 crystals with a minimal amount of stacking disorder have a higher thermal conductivity that pushes the thermal Hall conductivity to be closer to the half-integer quantized value. Importantly, these findings demonstrate a strong correlation between layer stacking, structure transition, magnetic, and thermal transport properties, underscoring the importance of interlayer coupling in α-RuCl3 despite the weak van der Waals bonding.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Advanced SOFC quality control and the role of manufacturing defects on stack reliability

Atrex Energy rolled out first commercial SOFC generator products in 2013. Following that we embarked on implementation of mass production in order to ramp up productivity and lower the costs in the meantime. To ensure the goal of mass production, an accurate, cost effective and consistent quality control methodology needs to be in place. The aim of this DOE funded project is to devise a machine and methodology for cell quality control using modern non-destructive testing methods and cell rejection criterion based on the empirical determination of the role of manufacturing flaws on stack degradation and reliability. The work scope encompasses two goals aimed at 1) developing automatable techniques for objective flaw detection and 2) developing an understanding of the ramifications of flaws on stack and cell reliability. By accomplishing these two goals it is likely that an advanced stage Quality Control (QC) device can be developed. This project scope encompasses: 1) Invention of a high speed automated instrument for spatial mapping of surface and sub-surface imperfections in production cells (ex situ) using modern imaging techniques. 2) Identification of rejection criteria upon which to screen cells from production by: a. Magnification of the effect of production defects on cell degradation through fabrication and testing of micro-cells which encompass these imperfections. b. The long term testing of full size production cells both as single cells and in small stacks, in order to correlate the (in situ) performance and degradation with the imperfection type (identified ex-situ) and hence be able to classify imperfections as actual defects. We first built a defect library with the cells containing imperfections classified and documented. The cells with various imperfections were tested to evaluate the imperfection potential impact on cell electrochemical performance. Evaluations were conducted on minicell, single cell and stack levels. On minicell level, pinhole, scratch, crack, contamination, and pop-out were investigated. We found: (1) none of the imperfections causes calamity type failure, (2) pinholes do not show measurable effect on minicell performance, (3) imperfection such as electrolyte abrasion, scratch, and pop out cause minicell potential to fluctuate by different degrees; the cells with such imperfections exhibit sensitivity of potential to high fuel utilization and “self healing” behavior. On single cell level we evaluated the effect of long crack and high population pinholes. The cell with a long crack does not show performance compromise at start. There is no potential fluctuation or sensitivity to high fuel utilization or catastrophic failure. The voltage degradation due to thermal cycle is slightly higher than normal cells. The cells with high population pinholes perform surprisingly as well as normal cells over a period of 3,500h. Even when subjected to cyclic load condition, the cells 4 show negligible degradation. Our cells appear to have “self immunization” feature which fends off the adversary effects of certain imperfections. Defects were also evaluated on stack level. Two stacks were made each with ten defect cells. The first stack was tested for 13,2000h under steady load condition while the second was tested for 9,000h under transient load conditions. We found: (1) voltage fluctuation and sensitivity to thermal cycle were not observed in contrast to minicell test, (2) of the various cracks examined, including longitudinal cracks, circumferential crack, crack near closed and open ends, none exhibited distinguishable impact on performance, (3) defect cells exhibited higher degradation rates on average under steady load condition; Individually some defect cells performed similarly or better than reference cells, (4) under steady load condition all the cells degrade monotonically with degradation rate increasing with time, (5) under cyclic (transient) load condition, both defect and reference cells exhibit complex dynamic behaviors, (6) fuel loss (leak) was measured occasionally for stack 1, the cells with crack showed the highest fuel loss increase, nevertheless, no correlation with performance degradation could be established with certainty, and (7) no catastrophic failure ever happened other than incremental degradation. Posttest inspection and microanalysis were carried out; the observations are summarized in what follows: (1) Electrolyte pinholes, some scratches and IC porosity became undetectable after testing. (2) The cathode covering the popout defects is intact without any cracking or delamination. (3) The scratch was covered by cathode in pristine state; Ni oxide or NiO-YSZ filled the space where electrolyte was missing. After >10,000h operation, the cathode that used to cover the scratch was missing but the size of the scratch remains unchanged; there is a fairly dense Ni oxide layer on top of the scratch. (4) All of the cracks remain their original dimensions. Current collector kept longitudinal cracks closed which mitigated the adversary effect of crack on cell performance/durability. (5) The crack at open end showed some deterioration manifested by a small oxidation zone in the vicinity of the crack. Wide spectrum of imaging techniques were surveyed and evaluated to detect tubular SOFC defects. Optical methods, with and without assistance of expression technique, were applied to detect all kinds of defects. Thermograph method in combination of CO2 leak, ultra-sound and electric potential was also extensively evaluated to detect surface and under-surface defects such as short circuit. Based on these works, laser camera has been selected to build the final QC machine vision inspection system. The Gocator laser profile sensor was setup to generate 2D surface intensity images of tubular SOFC surface which were analyzed with Sherlock machine vision software supplied by Teledyne Dalsa. The Gocator output was integrated with the Sherlock software and enabled live images to be imported by a Common Vision Blox driver. The Sherlock software was programmed to detect various surface defects from the surface intensity images generated by the Gocator. These measurements are subsequently used to make pass or fail decisions.

01 COAL, LIGNITE, AND PEAT↗
NASA NTRS1990

Macromolecular differentiation of Golgi stacks in root tips of Arabidopsis and Nicotiana seedlings as visualized in high pressure frozen and freeze-substituted samples

The plant root tip represents a fascinating model system for studying changes in Golgi stack architecture associated with the developmental progression of meristematic cells to gravity sensing columella cells, and finally to "young" and "old", polysaccharide-slime secreting peripheral cells. To this end we have used high pressure freezing in conjunction with freeze-substitution techniques to follow developmental changes in the macromolecular organization of Golgi stacks in root tips of Arabidopsis and Nicotiana. Due to the much improved structural preservation of all cells under investigation, our electron micrographs reveal both several novel structural features common to all Golgi stacks, as well as characteristic differences in morphology between Golgi stacks of different cell types. Common to all Golgi stacks are clear and discrete differences in staining patterns and width of cis, medial and trans cisternae. Cis cisternae have the widest lumina (approximately 30 nm) and are the least stained. Medial cisternae are narrower (approximately 20 nm) and filled with more darkly staining products. Most trans cisternae possess a completely collapsed lumen in their central domain, giving rise to a 4-6 nm wide dark line in cross-sectional views. Numerous vesicles associated with the cisternal margins carry a non-clathrin type of coat. A trans Golgi network with clathrin coated vesicles is associated with all Golgi stacks except those of old peripheral cells. It is easily distinguished from trans cisternae by its blebbing morphology and staining pattern. The zone of ribosome exclusion includes both the Golgi stack and the trans Golgi network. Intercisternal elements are located exclusively between trans cisternae of columella and peripheral cells, but not meristematic cells. In older peripheral cells only trans cisternae exhibit slime-related staining. Golgi stacks possessing intercisternal elements also contain parallel rows of freeze-fracture particles in their trans cisternal membranes. We propose that intercisternal elements serve as anchors of enzyme complexes involved in the synthesis of polysaccharide slime molecules to prevent the complexes from being dragged into the forming secretory vesicles by the very large slime molecules. In addition, we draw attention to the similarities in composition and apparent site of synthesis of xyloglucans and slime molecules.

NASA Program Space Biology↗
NASA NTRS1983

Stacked-disc structure for fluid filter or valve silencer

A stacked-disc structure is comprised of a stack of annular discs (13) scalloped along the outer edge to provide lobes (13a) and etched on one side to provide lands (13a). A web (13d) is retained in the lobes to strengthen the discs so that they will not collapse due to high fluid pressure. The stack of discs is retained by a housing (10) having a fluted interior wall to retain the ends of the lobes. End plates (11 and 12) secure the stack of discs with a spacer (14) at one end having lands (14a) on lobes which match the lobes of the stacked discs to allow fluid to flow into, or out of, the spaces between the lobes of the stacked discs. The spaces between the lands on the etched discs provide passages for fluid flow into or out of the hollow core of the stack. The height of the lands (i.e., depth of the etch) determines the size of the smallest particle that will be permitted to flow through. The stacked-disc structure may be connected to the inlet of a valve, or be incorporated into the valve housing on the inlet side of the valve seat to assure substantially constant fluid velocity, and thereby reduce valve noise when the valve is operated.

Hagler, Jr., Ray↗
DOE OSTI2016

Multiple stack fuel cell system

A fuel cell system is disclosed comprising a plurality of fuel cell modules including a sealed planar fuel cell stack, the stack including internal manifold channels for transport of fuel and air to fuel cells within the stack and transport of tail gas and spent air away from fuel cells within the stack. Each of the fuel cell stacks is mounted on a stack footprint area of a top member of a base manifold. The base manifolds are configured to allow for interconnection of a number of fuel cell stack modules to provide a fuel cell system capable of producing power outputs that otherwise would have required large surface area cells or stack with a large number of cells.

Haltiner, Jr., Karl J.↗
DOE OSTI2017

Cathode-side electrical contact and contact materials for solid oxide fuel cell stacking: A review

In a planar solid oxide fuel cell (SOFC) stack, a number of individual cells are stacked together to increase the voltage and power output. At both the cathode– and anode–interconnect interfaces, electrical contact layers are applied between the interconnect and electrodes during cell fabrication process or stack assembly to increase the electrode-interconnect contact area and to compensate for dimensional tolerance variation of the contacting components, thus minimizing ohmic contact resistance throughout the stack. As such, electrical contact is an essential component in SOFC stacks. In this paper, we review the cathode-side electrical contact design and contact materials for application in SOFC stacks. Following an introduction of the function and working principles of electrical contact, the material requirements for cathode-side contact layer in SOFC stacks are outlined. Additionally, the current materials for the cathode–interconnect contact are thoroughly reviewed, including noble metals, conductive ceramics (e.g. perovskites and spinels), composites, and other more complex structures. Several potential directions for cathode–interconnect contact material research and development are also highlighted.

08 HYDROGEN↗
DOE OSTI2026

Identifying Strain Stacking Boundaries between Multiphase Domains in Atomically Thin Two-Dimensional Magnets

Stacking engineering of van der Waals materials is an important strategy to control the materials’ properties, such as electronic correlations, ferroelectricity, and layer-dependent two-dimensional magnetism. A timely testbed for the study of the latter is atomically thin chromium trihalides (CrX 3 , X = Cl, Br, I). Notably, by understanding the sliding mechanism between different stacking sequences, control of the stacking arrangement, and thus magnetic properties in CrX 3 , can be achieved. Such insight, however, is currently lacking. Here, in this study, advanced electron microscopy methods are used to identify multiple stacking sequences corresponding to different bulk phases in atomically thin CrX 3 (X = Cl and Br) down to bilayer thickness and with lateral domain sizes as small as tens of nanometers. Indications of nanometer scale transitions and interactions at the stacking boundaries are found, including a universally preferred sliding direction that is consistent with density functional theory calculations and the strain fields at lateral heterostructure boundaries. This study demonstrates the necessity to consider local stacking structures when interpreting averaged magnetic properties measured with macroscale probes. Additionally, the preferred sliding direction insight from this study provides a strategy to control stacking sequence in atomically thin CrX 3 samples during the exfoliation and sample fabrication process.

DFT calculations↗
DOE OSTI2018

Analytic model of the γ -surface deviation and influence on the stacking fault width between partial dislocations

The stacking fault width (R$_{eq}$) between partial dislocations within an FCC crystalline lattice characterizes the onset of numerous plastic flow mechanisms, as well as the relationship between material strength and grain size. Continuum models traditionally consider a complete unit of dislocation slip ( b ) along the $\langle{110}$$\rangle$ direction distributed between two discrete partial dislocations, each with a fixed partial Burgers vector ( b p ), which bound a stacking fault. Across the stacking fault, the vectorial slip is assumed to be constant, yielding a constant intrinsic stacking fault energy density, $\gamma$$_{isf}$ Here, we demonstrate that the vectorial displacement path taken in accomplishing a complete unit of slip (b) deviates from the expected displacement path containing the local minima, $\gamma$$_{isf}$ leading to a correction in the nominally derived stacking fault width. The magnitude of the correction depends on both the net orientation of the dislocation within the lattice, and also the degree of relaxation of each partial Burgers vector along the $\langle{\bar{1}12}$$\rangle$ direction. We derive a simple analytic model for the corrected stacking fault width, explicitly accounting for the deviation, by introducing a variable ξ (0 < ξ < 1), which governs the magnitude of each partial dislocation component along the $\langle{\bar{1}12}$$\rangle$ direction. Significantly, our model predicts a correction to R$_{eq}$ of ~$\mathscr{O}$ (|b|) for the nominally screw dislocation, and has no noticeable influence on nominally edge dislocations. We apply our model towards computing the stacking fault width of several FCC metals, and demonstrate excellent agreement both with our own numerical data as well as that obtained from ab initio and Molecular Statics (MS) methods within the literature. Lastly, the results from this study demonstrate that, upon judicious application, discrete linear elastic models are successful in reproducing elastic interactions as computed from higher fidelity models on the spatial scale of metallic dislocation cores.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Nature of Interlayer Binding and Stacking of sp–sp 2 Hybridized Carbon Layers: A Quantum Monte Carlo Study

α-graphyne is a two-dimensional sheet of sp-sp2 hybridized carbon atoms in a honeycomb lattice. While the geometrical structure is similar to that of graphene, the hybridized triple bonds give rise to electronic structure that is different from that of graphene. Similar to graphene, α-graphyne can be stacked in bilayers with two stable configurations, but the different stackings have very different electronic structures: one is predicted to have gapless parabolic bands and the other a tunable bandgap which is attractive for applications. In order to realize applications, it is crucial to understand which stacking is more stable. This is difficult to model, as the stability is a result of weak interlayer van der Waals interactions which are not well captured by density functional theory (DFT). We have used quantum Monte Carlo simulations that accurately include van der Waals interactions to calculate the interlayer binding energy of bilayer graphyne and to determine its most stable stacking mode. Our results show that inter-layer bindings of sp- and sp2-bonded carbon networks are significantly underestimated in a Kohn-Sham DFT approach, even with an exchange-correlation potential corrected to include, in some approximation, van der Waals interactions. Finally, our quantum Monte Carlo calculations reveal that the interlayer binding energy difference between the two stacking modes is only 0.9(4) eV/atom. From this we conclude that the two stable stacking modes of bilayer α-graphyne are almost degenerate with each other, and both will occur with about the same probability at room temperature unless there is a synthesis path that prefers one stacking over the other.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Stacking-dependent interlayer coupling in trilayer MoS 2 with broken inversion symmetry

The stacking configuration in few-layer two-dimensional (2D) materials results in different structural symmetries and layer-to-layer interactions, and hence it provides a very useful parameter for tuning their electronic properties. For example, ABA-stacking trilayer graphene remains semimetallic similar to that of monolayer, while ABC-stacking is predicted to be a tunable band gap semiconductor under an external electric field. Such stacking dependence resulting from many-body interactions has recently been the focus of intense research activities. Here we demonstrate that few-layer MoS 2 samples grown by chemical vapor deposition with different stacking configurations (AA, AB for bilayer; AAB, ABB, ABA, AAA for trilayer) exhibit distinct coupling phenomena in both photoluminescence and Raman spectra. By means of ultralow-frequency (ULF) Raman spectroscopy, we demonstrate that the evolution of interlayer interaction with various stacking configurations correlates strongly with layer-breathing mode (LBM) vibrations. Our ab initio calculations reveal that the layer-dependent properties arise from both the spin–orbit coupling (SOC) and interlayer coupling in different structural symmetries. Lastly, such detailed understanding provides useful guidance for future spintronics fabrication using various stacked few-layer MoS 2 blocks.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Effect of number of stack on the thermal escape and non-radiative and radiative recombinations of photoexcited carriers in strain-balanced InGaAs/GaAsP multiple quantum-well-inserted solar cells

Three non-destructive methodologies, namely, surface photovoltage (SPV), photoluminescence, and piezoelectric photothermal (PPT) spectroscopies, were adopted to detect the thermal carrier escape from quantum well (QW) and radiative and non-radiative carrier recombinations, respectively, in strain-balanced InGaAs/GaAsP multiple-quantum-well (MQW)-inserted GaAs p-i-n solar cell structure samples. Although the optical absorbance signal intensity was proportional to the number of QW stack, the signal intensities of the SPV and PPT methods decreased at high number of stack. To explain the temperature dependency of these signal intensities, we proposed a model that considers the three carrier dynamics: the thermal escape from the QW, and the non-radiative and radiative carrier recombinations within the QW. From the fitting procedures, it was estimated that the activation energies of the thermal escape ΔE{sub barr} and non-radiative recombination ΔE{sub NR} were 68 and 29 meV, respectively, for a 30-stacked MQW sample. The estimated ΔE{sub barr} value agreed well with the difference between the first electron subband and the top of the potential barrier in the conduction band. We found that ΔE{sub barr} remained constant at approximately 70 meV even with increasing QW stack number. However, the ΔE{sub NR} value monotonically increased with the increase in the number of stack. Since this implies that non-radiative recombination becomes improbable as the number of stack increases, we found that the radiative recombination probability for electrons photoexcited within the QW increased at a large number of QW stack. Additional processes of escaping and recapturing of carriers at neighboring QW were discussed. As a result, the combination of the three non-destructive methodologies provided us new insights for optimizing the MQW components to further improve the cell performance.

77 NANOSCIENCE AND NANOTECHNOLOGY↗