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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

Solid-phase heteroepitaxy of oriented Sb 2 Se 3 on GaAs for birefringent thin films

Here, we investigate the amorphous-to-crystalline transformation of antimony selenide (Sb 2 Se 3 ) on UHV-prepared GaAs (001) substrates. In the bulk orthorhombic form, Sb 2 Se 3 is a layered quasi-1D semiconductor with highly anisotropic properties of interest for optical and electronic devices. We find that an amorphous layer deposited by molecular beam epitaxy annealed at or above 230 °C yields a textured-epitaxial structure among some randomly oriented domains. The textured-epitaxial Sb 2 Se 3 grains are oriented with the covalently bonded “1D axis” constrained in-plane to GaAs [110] and with multiple van der Waals (hk0) orientations out-of-plane. The same texture was achieved exclusively without randomly oriented grains using continuous-wave laser radiation, highlighting the use of thermal and optical methods to yield anisotropic crystalline Sb 2 Se 3 films directly from the amorphous phase. Polarized reflectance and polarized microscopy confirm the unique state of in-plane birefringence in the crystallized thin film. Overall, we show that solid-phase heteroepitaxy provides additional pathways to the integration of low-symmetry chalcogenide semiconductors for demanding applications where the inherent anisotropy needs to be preserved.

Xiao, Kelly [Stanford Univ., CA (United States)] (↗
DOE OSTI2020

A review of Sb 2 Se 3 photovoltaic absorber materials and thin-film solar cells

Energy generated from environmentally friendly, cost-effective solar cells is a key aspect for developing a clean renewable-energy economy. Non-toxic and Earth-abundant materials with high absorption coefficient (>10 5 cm -1 ) and optimal bandgap (1-1.5 eV) have received great attention as photovoltaic (PV) absorber layers during the last few decades. Among them, antimony selenide (Sb 2 Se 3 ) has been a promising PV absorber, with steadily increasing power-conversion efficiency (PCE) compared to other emerging compounds. Very recent studies showed that high-quality ZnO:Al/ZnO/CdS/TiO 2 /Sb 2 Se 3 /MoSe 2 /Mo devices with PCE of 9.2% can be fabricated using cost-effective novel compounds. Considering these recent advances, this article provides an overview of the material properties of Sb2Se3 thin films and the recent progress made with Sb 2 Se 3 -based solar cells. Furthermore, analysis of Sb 2 Se 3 -based thin-film solar cells has also shown that the devices have relatively good light management due to their suitable bandgap and high absorption coefficient, whereas carrier management, i.e. collection efficiency of photo-generated carriers, needs significant improvement. Overall, this study provides background knowledge on material properties and device performance and suggests main research directions to overcome the limiting factors of solar cell performance.

14 SOLAR ENERGY↗
DOE OSTI2023

Thermally generated spin current in the topological insulator Bi 2 Se 3

We present measurements of thermally generated transverse spin currents in the topological insulator Bi2Se3, thereby completing measurements of interconversions among the full triad of thermal gradients, charge currents, and spin currents. We accomplish this by comparing the spin Nernst magneto-thermopower to the spin Hall magnetoresistance for bilayers of Bi 2 Se 3 /CoFeB. We find that Bi 2 Se 3 does generate substantial thermally driven spin currents. A lower bound for the ratio of spin current density to thermal gradient is $\frac{J_{s}}{∇_{x}T}$ = (4.9 ± 0.9) × 10 6 ($\frac{ℏ}{2e}$) $\frac{A m^{-2}}{K μm^{-1}}$, and a lower bound for the magnitude of the spin Nernst ratio is -0.61 ± 0.11. The spin Nernst ratio for Bi 2 Se 3 is the largest among all materials measured to date, two to three times larger compared to previous measurements for the heavy metals Pt and W. Strong thermally generated spin currents in Bi 2 Se 3 can be understood via Mott relations to be due to an overall large spin Hall conductivity and its dependence on electron energy.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Block-Type Antiferromagnetism in Single Chain Quasi-One-Dimensional K 3 ⁢Fe 2 ⁢Se 4

One-dimensional (1D) structures provide a unique platform to study the correlated quantum interactions and phase transitions such as unconventional magnetism and superconducting states. Here, we report that iron chalcogenide K 3 ⁢Fe 2 ⁢Se 4 exhibits an unusual block-type canted antiferromagnetic (AFM) order with a clear single chain quasi-1D structure, which is structurally different from the two-leg ladder BaFe 2 ⁢Se 3 , through both experimental measurements and density matrix renormalization group (DMRG) calculations. The narrow bandgap semiconductor K 3 ⁢Fe 2 ⁢Se 4 has a quasi-1D edge-shared FeSe4 tetrahedra chain structure and orders antiferromagnetically below 110 K. The magnetic moments couple antiferromagnetically along the quasi-1D chain direction of the 𝑏 axis and form an up-down-down-up (↑−↓−↓−↑)–like spin structure with a commensurate propagation vector 𝒌=⁢(0,0,0), where block-type spin ↑−↑ or ↓−↓ coupling are between the longer Fe-Fe bonds of the quasi-1D chain. DMRG results show that block antiferromagnetic state is stable in K 3 ⁢Fe 2 ⁢Se 4 and reveal that the block-ordered arrangement of Fe 2.5+ ions spins arise from the competition between ferromagnetic and AFM interaction in the presence of strong electronic correlation. Our research results not only report the discovery of a clear block-type canted antiferromagnetic structure in a real quasi-1D chain material but also provide a theoretical approach to understand the block-type antiferromagnetism in quasi-1D iron chalcogenides.

antiferromagnetism↗
DOE OSTI2021

In situ Al 2 O 3 incorporation enhances the efficiency of CuIn(S,Se) 2 solar cells prepared from molecular-ink solutions

Here, we report an efficiency enhancement of solution-processed CuIn(S,Se) 2 (CISSe) thin film solar cells via in situ incorporation of Al 2 O 3 . These films were produced using inks containing CuCl, InCl 3 , AlNO 3 (Al/Al + In: 0.1) and thiourea dissolved in methanol. After spin coating of these solutions in air, samples were subjected to a selenization process. Auger electron spectroscopy depth-profiling analysis showed that Al is evenly distributed throughout the bulk of the film. Transmission electron microscopy revealed that AlNO 3 precursor reacted with oxygen to form nanosized amorphous Al 2 O 3 grains located within the bulk and grain boundaries of CISSe, as well as at both the top and bottom interfaces. Power conversion efficiency (PCE) as high as 11.6% (JS C : 35.8 mA cm –2 , V OC : 518 mV, FF: 62.2%, no anti-reflection coating) was achieved with Al–CISSe solar cell devices integrated with CdS (chemical bath deposition, thickness: 80 nm) and ZnO/ITO bilayers (sputtered, thickness: 300 nm). The average PCE (10.1%, $\langle$J SC $\rangle$: 34.5 mA cm –2 , $\langle$V OC $\rangle$: 491 mV, $\langle$FF$\rangle$: 59.8%) was nearly 4% (absolute) higher than that measured on CISSe baseline cells fabricated from solutions without Al ($\langle$PCE$\rangle$ = 6.4%, $\langle$J SC $\rangle$: 32.8 mA cm –2 , $\langle$V OC $\rangle$: 410 mV, $\langle$FF$\rangle$: 47.3%). This in situ Al 2 O 3 incorporation is speculated to play a role in the enhancement of the VOC and FF of the devices through passivation of defects in CISSe reducing interface and bulk recombination, as evidenced by a reduced defect density and an increased activation energy of the dominant recombination mechanism from capacitance and temperature-dependent VOC measurements, respectively.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Superconductivity and electron-phonon interaction in Sr x Bi 2 Se 3 under pressure

Pressure-induced superconductivity has been widely explored and observed in Bi 2 Se 3 -based topological materials to hunt for topological superconductors. Although their triggered superconductivity has a close connection to their pressure-induced structural phase transitions, the quest for the electron pairing mechanism of these superconducting semiconductors in both their initial rhombohedral and high-pressure phases remains unknown. In this work, we present a systematic study of the pressure effect on superconducting properties and lattice dynamics using a combination of electrical transport, Raman-scattering, and synchrotron x-ray diffraction measurements using diamond anvil cells. One key finding is our observation of a cooperative connection between the strength of the electron–phonon interaction (EPI) generated by optical branches and the pressure-tunable superconductivity in rhombohedral Sr x Bi 2 Se 3 crystal. The underlying suppression mechanism of the T c by pressure is ascribed to the weakening of the electrons' interaction with the optical phonon modes in the rhombohedral phase. In the intermediate monoclinic phase, the T c value underwent a sharp increase with carrier density accumulation accompanying the concurrent enhanced EPI. This is intuitively unusual since it is expected that the EPI shall be weakened by inducing more conducting carriers in a normal metal. In the tetragonal phase, the superconductivity is interpreted within BCS theory, since it is fully metallized and obeys the adiabatic Born–Oppenheimer approximation well. Our findings are important to fully understand unconventional superconductivity and the unusual pairing mechanism in the layered rhombohedral Bi 2 Se 3 -based superconductors.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Scanning tunneling microscopy study of the antiferromagnetic topological insulator MnBi 2 Se 4

Topological insulators with intrinsic magnetic ordering such as MnBi 2 Se 4 have been predicted to host many exotic topological phenomena including dissipationless edge states and magnetoelectric effects. Here we use scanning tunneling microscopy to study the surface of MnBi 2 Se 4 epitaxial thin films. Large scale topographic images show steps between van der Waals layers and screw dislocations. While we find the Se-termination predominant on the surface, areas attributed to Bi-termination are found at the edges of small islands in as-grown films, or in larger areas upon removal of surface capping. Here, we compare these terminations through an analysis of step heights, atomic resolution images and tunneling spectroscopy. Tunneling spectra on the Se-termination reveals semiconducting behavior, with an apparent bandgap of >0.18eV that depends on the tip height. In contrast, tunneling spectra of the Bi-termination appears gapless, which could be an indication of dangling bond states on the surface. In both cases, a hexagonal 3.9Å lattice is observed that is consistent with the expected crystal structure.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

Stabilization of the Polar Structure and Giant Second-Order Nonlinear Response of Single Crystal γ-NaAs 0.95 Sb 0.05 Se 2

The dearth of suitable materials significantly restricts the practical development of infrared (IR) laser systems with highly efficient and broadband tuning. Recently, γ-NaAsSe 2 is reported, and it exhibits a large nonlinear second-harmonic generation (SHG) coefficient of 590 pm V —1 at 2 µm. However, the crystal growth of γ-NaAsSe 2 is challenging because it undergoes a phase transition to centrosymmetric δ-NaAsSe 2 . Herein, the stabilization of non-centrosymmetric γ-NaAsSe 2 by doping the As site with Sb, which results in γ-NaAs 0.95 Sb 0.05 Se 2 is reported. The congruent melting behavior is confirmed by differential thermal analysis with a melting temperature of 450 °C and crystallization temperature of 415 °C. Single crystals with dimensions of 3 mm × 2 mm are successfully obtained via zone refining and the Bridgman method. The purification of the material plays a significant role in crystal growth and results in a bandgap of 1.78 eV and thermal conductivity of 0.79 Wm —1 K —1 . The single-crystal SHG coefficient of γ-NaAs 0.95 Sb 0.05 Se 2 exhibits an enormous value of |d 11 | = 648 ± 74 pm V —1 , which is comparable to that of γ-NaAsSe 2 and ≈20× larger than that of AgGaSe 2 . Importantly, the bandgap of γ-NaAs 0.95 Sb 0.05 Se 2 (1.78 eV) is similar to that of AgGaSe 2 , thus rendering it highly attractive as a high-performing nonlinear optical material.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Multimodal synchrotron x-ray diffraction across the superconducting transition of Sr 0.1 Bi 2 Se 3

Here, in the doped topological insulator Sr x Bi 2 ⁢Se 3 , a pronounced in-plane twofold symmetry is observed in electronic properties below the superconducting transition temperature T c ~ 3 K, despite the threefold symmetry of the observed $R\overline{3}m$ space group. The axis of twofold symmetry is nominally pinned to one of three rotationally equivalent crystallographic directions and crystallographic strain has been proposed to be the origin of this pinning. We carried out multimodal synchrotron diffraction and resistivity measurements down to and in magnetic fields up to 45 kG on a single crystal of to probe the effect of superconductivity on the crystallographic distortion. Our results indicate that there is no in-plane crystallographic distortion at the level of 1 x 10 -5 associated with the superconducting transition. These results further support the model that the large twofold in-plane anisotropy of superconducting properties of Sr x Bi 2 ⁢Se 3 is not structural in origin, but electronic, namely, it is caused by a nematic superconducting order parameter of E u symmetry.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

To Substitute Rather Than Intercalate: Chimie douce Approach to Induce Ferromagnetism in Metastable Pt 0.8 M 0.2 Se 2 ( M = Cr, Co, Ni)

Two-dimensional (2D) magnetic materials with exotic magnetic properties have garnered significant interest due to their potential applications in spintronics and data storage technologies. However, the limited availability of intrinsic 2D magnetic materials has driven efforts to induce and manipulate magnetism in otherwise nonmagnetic 2D systems through approaches such as chemical intercalation, defect engineering, and substitutional doping. Herein, we present a facile, chimie douce method for incorporating 3d transition metals (Cr, Co, and Ni) into the nonmagnetic PtSe 2 sublattice. This synthetic approach enables control over layer thickness of Pt 1–x M x Se 2 (M = Cr, Co, Ni) nanosheets by varying the M identity and annealing conditions. Comprehensive scattering and spectroscopic characterizations confirm the successful and homogeneous substitution of M atoms at the Pt site, rather than intercalation, and reveal a strong correlation between nanosheet thickness and the identity of the substituting metal. High-temperature annealing of the nanosheets promotes an irreversible transformation toward the bulk phase, allowing for detailed characterization of structural and magnetic properties. A case study of Pt 0.8 Cr 0.2 Se 2 reveals that nanosheet thickness plays a critical role in modulating local magnetic interactions. While Cr atoms in the as-synthesized few-layers-thick nanosheets exhibit predominantly short-range antiferromagnetic interactions, the emergence of short-range ferromagnetic exchange is revealed in the bulk material. Detailed ac susceptibility and remanent magnetization measurements further demonstrate that bulk Pt 0.8 Cr 0.2 Se 2 adopts a frustrated magnetic ground state with clear signatures of ferromagnetic cluster-glass behavior. The systematic investigation presented herein establishes a clear and robust protocol for the synthesis and in-depth characterization of 2D transition-metal-substituted PtSe2 materials with varying layer thickness and paves a path toward their realization in spintronic and magnetic device applications.

crystallinity↗
DOE OSTI2024

Room temperature chemical transformation of SnSe to Ag 2 Se nanocrystals via cation exchange

Atomic-scale control of the chemical composition of semiconductor nanocrystals through a cation exchange reaction affords greater tunability in the design of multifunctional semiconductor composite nanocrystals. Here, we report a facile route to SnSe–Ag 2 Se composite nanocrystals using cation exchange at room temperature. Starting from freshly synthesized SnSe nanorods, we leverage the strong distortion of the Sn 2+ octahedral coordination in SnSe and the hard–soft acid–base (HSAB) principle, to promote the exchange of an Sn 2+ ion with two Ag + ions in methanol leading to Ag 2 Se/SnSe nanocomposites. The morphology and chemistry of the nanocrystals evolve from nanorods with SnSe@Ag 2 Se (core@shell) structures for SnSe-rich composites to nanorods with a random distribution of Sn 2+ and Ag + ions for nearly equimolar composites, and finally to irregular fragmented nanocrystals for Ag 2 Se-rich composites. A mechanistic understanding of the observed morphology evolution is discussed using the change in the cation coordination from octahedral (Sn 2+ ) to tetrahedral (Ag + ) geometry and the accompanying expansion of the hcp Se 2– sublattice. Interestingly, the synthesized composite nanocrystals exhibit an optical band gap value tunable within a wide energy range by increasing the Ag 2 Se/SnSe ratio. This work provides a useful and facile strategy to modify the optical behavior of semiconductor nanomaterials, which can be leveraged for the design of better optical and/or photovoltaic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Lattice Dynamics of Sb 2 Se 3 from Inelastic Neutron and X-Ray Scattering

The lattice dynamics of orthorhombic Sb 2 Se 3 is studied by a combination of inelastic neutron and 121 Sb nuclear inelastic scattering giving access to the total and Sb partial density of phonon states (DPS). The Se partial DPS is determined from the difference between the total and Sb partial DPS. The total DPS is determined at 39, 150, and 300 K, and an analysis of the temperature-induced mode shifts in combination with low-temperature powder diffraction data is provided. Using an earlier reported theoretical approach, the corresponding total and partial DPS of Sb 2 Se 3 are calculated by first-principles calculations. Herein, a detailed analysis of the Grüneisen parameter, element-specific and bulk Debye temperatures, and the mean force constants as derived from the experimental data and discrete Fourier transform calculations is provided. In general, the calculations underestimate the strength of the covalent Sb-Se bonds.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2022

Weak Electron–Phonon Coupling and Enhanced Thermoelectric Performance in n-type PbTe–Cu 2 Se via Dynamic Phase Conversion

This study investigates Ga-doped n-type PbTe thermoelectric materials and the dynamic phase conversion process of the second phases via Cu 2 Se alloying. Introducing Cu 2 Se enhances its electrical transport properties while reducing its lattice thermal conductivity (κlat) via weak electron–phonon coupling. Additionally, Cu 2 Te and CuGa(Te/Se) 2 (tetragonal phase) nanocrystals precipitate during the alloying process, resulting in Te vacancies and interstitial Cu in the PbTe matrix. At room temperature, Te vacancies and interstitial Cu atoms serve as n-type dopants, increasing the carrier concentration and electrical conductivity from ≈1.18 × 10 19 cm –3 and ≈1870 S cm –1 to ≈2.26 × 10 19 cm –3 and ≈3029 S cm –1 , respectively. With increasing temperature, the sample exhibits a dynamic change in Cu 2 Te content and the generation of a new phase of CuGa(Te/Se) 2 (cubic phase), strengthening the phonon scattering and obtaining an ultralow k lat . Pb 0.975 Ga 0.025 Te-3%CuSe exhibits a maximum figure of merit of ≈1.63 at 823 K, making it promising for intermediate-temperature device applications.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Exchange-Driven Intermixing of Bulk and Topological Surface States by Chiral Excitons in Bi 2 Se 3

Topological surface states (TSS) in the prototypical topological insulator (TI) Bi 2 Se 3 are frequently characterized using optical probes, but electron-hole interactions and their effect on surface localization and optical response of the TSS remain unexplored. Here, we use ab initio calculations to understand excitonic effects in the bulk and surface of Bi 2 Se 3 . We identify multiple series of chiral excitons that exhibit both bulk and TSS character, due to exchange-driven mixing. Further, our results address fundamental questions about the degree to which electron-hole interactions can relax the topological protection of surface states and dipole selection rules for circularly polarized light in TIs by elucidating the complex intermixture of bulk and surface states excited in optical measurements and their coupling to light.

42 ENGINEERING↗
DOE OSTI2021

Orbital contributions in the element-resolved valence electronic structure of Bi 2 Se 3

In this work, we studied the bulk band structure of a topological insulator (TI) Bi 2 Se 3 and determined the contributions of the Bi and Se orbital states to the valence bands using standing-wave excited hard x-ray photoemission spectroscopy (SW-HAXPES). This SW technique can provide the element-resolved information and extract individual Bi and Se contributions to the Bi2Se3 valence band. Comparisons with density-functional theory calculations (local density approximation and GW) reveal that the Bi 6s, Bi 6p, and Se 4p states are dominant in the Bi 2 Se 3 HAXPES valence band. Furthermore, these findings pave a way for studying the element-resolved band structure and orbital contributions of this class of TIs.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Anisotropic topological surface states in thin-film monoclinic Ag 2 Se

Silver chalcogenide systems have recently attracted significant attention due to their promising topological insulating properties. Here we conducted systematic low-temperature local scanning tunneling microscopy/spectroscopy and first-principles studies on the surface states of monoclinic Ag 2 Se thin films grown using molecular beam epitaxy. Through the use of quasi-particle interference patterns, we have observed evidence for topological surface states on the selenium-terminated surfaces with different types of defect densities. The results of ab initio calculations confirm the existence of nontrivial topological surface states in the monoclinic Ag 2 Se structure, for which such properties have not been previously reported. The energy dispersion determined using voltage-dependent standing wave patterns suggests that these topological states have an anisotropic Dirac cone structure. In conclusion, this discovery may lead to new applications for monoclinic Ag 2 Se in the rapidly growing fields of nanoelectronics and spintronics.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Evidence for nitrogen binding to surface defects for topological insulator Bi 2 Se 3

Using scanning tunneling spectroscopy and theoretical simulations we have studied the effects of nitrogen gas exposure on the electronic density of states of Bi 2 Se 3 , a well-studied topological insulator. In carefully controlled measurements, Bi 2 Se 3 crystals were initially cleaved in a helium gas environment and then exposed to a 22 SCFH flow of ultra-high purity N 2 gas. We observe a resulting change in the spectral curves, with the exposure effect saturating after approximately 50 min, ultimately bringing the Dirac point about 50 meV closer to the Fermi level. Furthermore, these results are compared to density functional theory calculations, which support a picture of N 2 molecules physisorbing near Se vacancies. Furthermore, ab initio molecular dynamics simulations aided by a Blue Moon ensemble method reveal the dissociative adsorption of N 2 molecules which then bind strongly to Se vacancies at the surface. In this scenario, the binding of the N atom to a Se vacancy site removes the surface defect state created by the vacancy and changes the position of the Fermi energy with respect to the Dirac point.

36 MATERIALS SCIENCE↗
DOE OSTI2025

X-Ray and Electron Spectroscopy of the CdS/(Ag,Cu)(In,Ga)Se 2 Interface With RbF Treatment

The chemical and electronic structure of the CdS/(Ag,Cu)(In,Ga)Se 2 (CdS/ACIGSe) interface for thin-film solar cells, involving an absorber with a bulk [Ag]/([Ag]+[Cu]) (AAC) ratio of 0.06, a state-of-the-art RbF post-deposition treatment (PDT), and a chemical-bath deposited CdS buffer layer, is studied. To gain a detailed and depth-resolved picture of the CdS/ACIGSe interface, synchrotron- and laboratory-based hard X-ray, soft X-ray, and UV photoelectron spectroscopy, inverse photoemission spectroscopy, and X-ray emission spectroscopy are combined. Compared to the bulk of the absorber, a Cu- and Ga-poor ACIGSe surface is found, with a slightly increased AAC ratio. Strong evidence of a Rb–In–Se species (possibly with some Ag) at the absorber surface is compiled, with a corresponding band gap of 2.79 ± 0.12 eV. This finding is in clear contrast to comparable Ag-free Cu(In,Ga)Se 2 absorbers with RbF-PDT. The Rb–In–Se surface species is not removed by the (wet-chemical) CdS deposition process, while some Se diffuses into the CdS layer and segregates at its surface. The CdS buffer layer shows a band gap of 2.48 ± 0.12 eV, and a cliff (≈ -0.4 eV) is determined in the conduction band alignment at the interface between the Rb–In–Se species and the CdS buffer.

36 MATERIALS SCIENCE↗