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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Accessing Atomic-scale Phosphorus Dopant Distribution in Precise Silicon Devices by Advanced STEM Imaging and Spectroscopy

The structural and chemical characterization at the atomic-scale plays a critical role in understanding the structure-property relationship in precise electrical devices such as those produced by atomic-precision advanced manufacturing (APAM). APAM, utilizing hydrogen lithography in a scanning tunneling microscope, offers a potential pathway to ultra-efficient transistors, and has been developed to produce phosphorus (P)-based donor devices integrated into bare Si substrates. Structural characterization of the buried, Si with P dopant (Si:P) delta-layer in the devices by scanning transmission electron microscopy (STEM), however, is a challenge due to similar atomic number and low concentration of the P dopants. In this paper, we describe several efforts of utilizing advanced STEM imagining and spectroscopic techniques to quantify the Si:P deltalayers. STEM imaging combining low-angle and high-angle annular dark-field (LAADF, HAADF) detectors as well as atomic-scale elemental mapping using energy-dispersive X-ray spectroscopy (EDS) are used to reveal the P and defect distribution across the delta-layer processed under various thermal conditions.

47 OTHER INSTRUMENTATION↗
DOE OSTI2024

pnnl/oedisi_dopf

OpenEDI - System Integration (OEDI-SI) - PNNL Distributed Optimal Power Flow (DOPF)

Slay, Tylor↗
NASA NTRS1976

A CCD scanned (Hg, Cd)Te array for earth viewing applications

A 9 channel demonstration of 10 micrometer photoconductive mercury cadmium telluride detector array, bipolar preamplifiers, and a Si CCD multiplexer, integrated into a focal plane assembly and operating at 105 K and at 17 Hz is reported. The result of a direct coupling experiment between a 5-micrometer photovoltaic mercury cadmium telluride photodiode and a CCD is revealed. No appreciable degradation in the signal-to-noise ratio was experienced.

Iwasa, S.↗
NASA NTRS2020

Development of Global Operational Snow Analysis at the US Air Force 557th Weather Wing

The outdated SNODEP snow depth retrieval algorithm is replaced by the Foster et al. (1997; 2005) approach, which considers the effects of variations in forest cover. The simple blending algorithm (IDW) is replaced by the Bratseth scheme, a successive correction algorithm that converges to the solution provided by Optimal Interpolation (OI). Outdated quality control datasets are updated and quality control algorithms are reorganized to ensure the performance of the snow analysis. The spatial resolution of snow and ice estimates are increased from 25-km to 10-km.USAF-SI are fully integrated into the global operational land analysis configuration at the USAF 557th WW.

Yoon, Yeosang↗
NASA NTRS2007

An Overview of Integration and Test of the James Webb Space Telescope Integrated Science Instrument Module

The James Webb Space Telescope (JWST) is a 6.6m diameter, segmented, deployable telescope for cryogenic IR space astronomy (approx.40K). The JWST Observatory architecture includes the Optical Telescope Element (OTE) and the Integrated Science Instrument Module (ISIM) element that contains four science instruments (SI) including a Guider. The SIs and Guider are mounted to a composite metering structure with outer dimensions of 2.1x2.2x1.9m. The SI and Guider units are integrated to the ISIM structure and optically tested at NASA/Goddard Space Flight Center as an instrument suite using a high-fidelity, cryogenic JWST telescope simulator that features a 1.5m diameter powered mirror. The SIs are integrated and aligned to the structure under ambient, clean room conditions. SI performance, including focus, pupil shear and wavefront error, is evaluated at the operating temperature. We present an overview of the ISIM integration within the context of Observatory-level construction. We describe the integration and verification plan for the ISIM element, including an overview of our incremental verification approach, ambient mechanical integration and test plans and optical alignment and cryogenic test plans. We describe key ground support equipment and facilities.

Drury, Michael↗
DOE OSTI2021

The stability of Cl-, Br-, and I-passivated Si(100)-(2 × 1) in ambient environments for atomically-precise pattern preservation

Abstract Atomic precision advanced manufacturing (APAM) leverages the highly reactive nature of Si dangling bonds relative to H- or Cl-passivated Si to selectively adsorb precursor molecules into lithographically defined areas with sub-nanometer resolution. Due to the high reactivity of dangling bonds, this process is confined to ultra-high vacuum (UHV) environments, which currently limits its commercialization and broad-based appeal. In this work, we explore the use of halogen adatoms to preserve APAM-derived lithographic patterns outside of UHV to enable facile transfer into real-world commercial processes. Specifically, we examine the stability of H-, Cl-, Br-, and I-passivated Si(100) in inert N 2 and ambient environments. Characterization with scanning tunneling microscopy and x-ray photoelectron spectroscopy (XPS) confirmed that each of the fully passivated surfaces were resistant to oxidation in 1 atm of N 2 for up to 44 h. Varying levels of surface degradation and contamination were observed upon exposure to the laboratory ambient environment. Characterization by ex situ XPS after ambient exposures ranging from 15 min to 8 h indicated the Br– and I–passivated Si surfaces were highly resistant to degradation, while Cl–passivated Si showed signs of oxidation within minutes of ambient exposure. As a proof-of-principle demonstration of pattern preservation, a H–passivated Si sample patterned and passivated with independent Cl, Br, I, and bare Si regions was shown to maintain its integrity in all but the bare Si region post-exposure to an N 2 environment. The successful demonstration of the preservation of APAM patterns outside of UHV environments opens new possibilities for transporting atomically-precise devices outside of UHV for integrating with non-UHV processes, such as other chemistries and commercial semiconductor device processes.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS2016

Optical Testing and Verification Methods for the James Webb Space Telescope Integrated Science Instrument Module Element

NASA's James Webb Space Telescope (JWST) is a 6.6m diameter, segmented, deployable telescope for cryogenic IR space astronomy (~40K). The JWST Observatory includes the Optical Telescope Element (OTE) and the Integrated Science Instrument Module (ISIM) that contains four science instruments (SI) and the fine guider. The SIs are mounted to a composite metering structure. The SI and guider units were integrated to the ISIM structure and optically tested at the NASA Goddard Space Flight Center as a suite using the Optical Telescope Element SIMulator (OSIM). OSIM is a full field, cryogenic JWST telescope simulator. SI performance, including alignment and wave front error, were evaluated using OSIM. We describe test and analysis methods for optical performance verification of the ISIM Element, with an emphasis on the processes used to plan and execute the test. The complexity of ISIM and OSIM drove us to develop a software tool for test planning that allows for configuration control of observations, associated scripts, and management of hardware and software limits and constraints, as well as tools for rapid data evaluation, and flexible re-planning in response to the unexpected. As examples of our test and analysis approach, we discuss how factors such as the ground test thermal environment are compensated in alignment. We describe how these innovative methods for test planning and execution and post-test analysis were instrumental in the verification program for the ISIM element, with enough information to allow the reader to consider these innovations and lessons learned in this successful effort in their future testing for other programs.

spaceborne telescopes↗
NASA NTRS2016

Jwst from Below: An Overview of the Construction of the James Webb Space Telescope, Interesting Metrology, and Cryogenic-Vacuum Testing

NASA's James Webb Space Telescope (JWST) is a 6.6m diameter, segmented, deployable telescope for cryogenic IR space astronomy (40K). The JWST Observatory includes the Optical Telescope Element (OTE) and the Integrated Science Instrument Module (ISIM) that contains four science instruments (SI) and the guider. The SIs are mounted to a composite metering structure. The SI and guider units are integrated to the ISIM structure and optically tested at NASA Goddard Space Flight Center as a suite using a telescope simulator (Optical Telescope Element SIMulator; OSIM). OSIM is a full field, cryogenic JWST telescope simulator. SI performance, including alignment and wavefront error, is evaluated using OSIM. This is an overview presentation to undergraduate students and other personnel at the University of Richmond, planned for 12 Oct, 2016. It uses material previously released by NASA on the Internet (e.g., via Flickr) or at engineering conferences (e.g., SPIE). This presentation provides an overview of the status of the project, with an emphasis on optics and measurement.

instrument development↗
NASA NTRS2008

Recent Developments in the Alignment and Test Plans for the James Webb Space Telescope Integrated Science Instrument Module

The James Webb Space Telescope (JWST) is a 6.6m diameter, segmented, deployable telescope for cryogenic IR space astronomy (approximately 40K). The JWST Observatory architecture includes the Optical Telescope Element (OTE) and the Integrated Science Instrument Module (ISIM) element that contains four science instruments (SI) including a Guider. The SIs and Guider are mounted to a composite metering structure with outer dimensions of 2.1 x 2.2 x 1.9m. The SI and Guider units are integrated to the ISIM structure and optically tested at NASA/Goddard Space Flight Center as an instrument suite using an OTE SIMulator (OSIM). OSIM is a high-fidelity, cryogenic JWST telescope simulator that features a approximately 1.5m diameter powered mirror. The SIs are aligned to the structure's coordinate system under ambient, clean room conditions using laser tracker and theodolite metrology. Temperature-induced mechanical SI alignment and structural changes are measured using a photogrammetric measurement system at ambient and cryogenic temperatures. OSIM is aligned to the ISIM mechanical coordinate system at the cryogenic operating temperature via internal mechanisms and feedback from alignment sensors in six degrees of freedom. SI performance, including focus, pupil shear and wavefront error, is evaluated at the operating temperature using OSIM. We present an updated plan for the assembly and ambient and cryogenic optical alignment, test and verification of the ISIM element.

Ohl, Raymond↗
DOE OSTI2024

Vacuum deposition of χ(2) nonlinear organic single crystal films on silicon

Integrating second order nonlinear (χ(2)) optical materials on chip is an ongoing challenge for Si photonics. Noncentrosymmetric molecular crystals have the potential to deliver high χ(2) nonlinearity with good thermal stability, but so far have been limited to growth from solution or the melt, which are both difficult to control and scale up in manufacturing. Here, we show that large (>100 μm) single crystal domains of the nonlinear molecule 2-[3-(4-hydroxystyryl)-5,5-dimethylcyclohex-2-enylidene] malononitrile (OH1) can be grown monolithically on either glass or Si via vacuum evaporation, followed by a short thermal annealing step. The crystallites are tens of nanometer thick and exhibit strong second harmonic generation with their primary χ(2) tensor component lying predominantly in plane. Remarkably, we find that a single domain can grow uninterrupted through nearby channels etched on a Si wafer, which may provide a path to integrate OH1 on Si or Si3N4 waveguides for a broad range of χ(2)-based photonic integrated circuit functionality.

Physics↗
NASA NTRS1994

Highly ionized gas in the Galactic disk: The l = 295 deg, b,= 0 deg interarm direction

I present new high-resolution measurements of ultraviolet interstellar absorption lines toward three distant stars in the Galactic disk in the general direction l = 295 deg, b = 0 deg. The high ionization lines of Si IV and C IV toward HD 100276, HD 103779, and HD 104705 show substantial variations on angular scales of less than 1 deg, or about 50-100 pc at the distance of the stars. The Si IV and C IV midplane densities derived for HD 100276 and HD 103779 are N(sub o) (Si IV) approximately = 1.3 x 10(exp -9) cm(exp -3) and n(sub o)(C IV) approximately = 4.5 x 10(exp -9) cvm(exp -3), approximately a factor of 2-3 lower than the Galactic averages. Toward HD 104705, the Si IV midplane density is near the average value, but the C IV midplane density is a factor of 3 higher than average. The integrated C IV and Si IV ratios along the HD 100276 and HD 100379 sight lines are similar to the N(C IV)/N(Si IV) = 3.6 +/- 1.3 ratio for a sample of halo stars. For the HD 104705 sight line, N(C IV)/N(Si IV) = 11 and N(C IV)/N(N V) greater than 10. Turbulent mixing layers provide a possible source for the observed absorption along the three sight lines as does gas associated with cooling flows. If mixing layers are the primary source of the absorption along the disk sight lines, then the entrainment velocity of the hot gas is approximately 100 km/s and the post mixed gas temperature is approximately 2 x 10(exp 5) K; same differences may exist for these mixing layers compared to those inferred for gas toward the Galactic poles. Current models of cooling, hot gas in supernova remnants, and magnetized conduction fronts do not accurately describe the high ion properties toward the disk stars in this study.

Sembach, Kenneth R.↗
NASA NTRS1991

Ultraviolet interstellar absorption toward HD 156359, a halo star at 11 kiloparsecs in the direction l = 329 deg and b = -15 deg

Results based on high-quality multiple IUE high-dispersion spectra are presented for the HD 156359 sight line in the direction l = 328.7 deg and b = -14.5 deg. The UV stellar spectrum of HD 156359 is consistent with an MK classification of O9.7 Ib-II. The high-ionization UV interstellar absorption line in the star's UV spectrum are very broad with negative velocity extensions. Comparison of apparent column density profiles Na(v) for lines within each doublet indicates that there is no significant unresolved saturated structure in the Si IV or N V profiles. Direct integration of the Na(v) profiles for Si IV, C IV, and N V over velocities from -150 km/s to +40 km/s yields total column densities of log N = 14.10, 14.77, and 14.09, respectively. The definite detection of N V absorption lines with profile shapes similar to the Si IV and C IV profiles favors a common origin for all three species.

Sembach, Kenneth R.↗
NASA NTRS2005

Advances in Single and Multijunction III-V Photovoltaics on Silicon for Space Power

A collaborative research effort at MIT, Ohio State University and NASA has resulted in the demonstration of record quality gallium arsenide (GaAs) based single junction photovoltaic devices on silicon (Si) substrates. The ability to integrate highly efficient, radiation hard III-V based devices on silicon offers the potential for dramatic reductions in cell mass (approx.2x) and increases in cell area. Both of these improvements offer the potential for dramatic reductions in the cost of on-orbit electrical power. Recently, lattice matched InGaP/GaAs and metamorphic InGaP/InGaAs dual junction solar cells were demonstrated by MBE and OMVPE, respectively. Single junction GaAs on Si devices have been integrated into a space flight experiment (MISSES), scheduled to be launched to the International Space Station in March of 2005. I-V performance data from the GaAs/Si will be collected on-orbit and telemetered to ground stations daily. Microcracks in the GaAs epitaxial material, generated because of differences in the thermal expansion coefficient between GaAs and Si, are of concern in the widely varying thermal environment encountered in low Earth orbit. Ground based thermal life cycling (-80 C to + 80 C) equivalent to 1 year in LEO has been conducted on GaAs/Si devices with no discernable degradation in device performance, suggesting that microcracks may not limit the ability to field GaAs/Si in harsh thermal environments. Recent advances in the development and testing of III-V photovoltaic devices on Si will be presented.

Wilt, David M.↗
NASA NTRS2001

Coupling Between Finite Ground Coplanar Waveguides Embedded in Polyimide Layers for 3D-MMICs on Si

Three-dimensional circuits built upon multiple layers of polyimide are required for constructing Si/SiGe monolithic microwave/mm-wave integrated circuits on low resistivity Si wafers. However, the closely spaced transmission lines are susceptible to high levels of cross-coupling, which degrades the overall circuit performance. In this paper, theoretical and experimental results on coupling of Finite Ground Coplanar (FGC) waveguides embedded in polyimide layers are presented for the first time. These results show that FGC lines have approximately 8 dB lower coupling than coupled Coplanar Waveguides. Furthermore, it is shown that the forward and backward coupling characteristics for FGC lines do not resemble the coupling characteristics of other transmission lines such as microstrip.

Ponchak, George E.↗
NASA NTRS2007

Toward a III-V Multijunction Space Cell Technology on Si

High efficiency compound semiconductor solar cells grown on Si substrates are of growing interest in the photovoltaics community for both terrestrial and space applications. As a potential substrate for III-V compound photovoltaics, Si has many advantages over traditional Ge and GaAs substrates that include higher thermal conductivity, lower weight, lower material costs, and the potential to leverage the extensive manufacturing base of the Si industry. Such a technology that would retain high solar conversion efficiency at reduced weight and cost would result in space solar cells that simultaneously possess high specific power (W/kg) and high power density (W/m2). For terrestrial solar cells this would result in high efficiency III-V concentrators with improved thermal conductivity, reduced cost, and via the use of SiGe graded interlayers as active component layers the possibility of integrating low bandgap sub-cells that could provide for extremely high conversion efficiency.1 In addition to photovoltaics, there has been an historical interest in III-V/Si integration to provide optical interconnects in Si electronics, which has become of even greater relevance recently due to impending bottlenecks in CMOS based circuitry. As a result, numerous strategies to integrate GaAs with Si have been explored with the primary issue being the approx.4% lattice mismatch between GaAs and Si. Among these efforts, relaxed, compositionally-graded SiGe buffer layers where the substrate lattice constant is effectively tuned from Si to that of Ge so that a close lattice match to subsequent GaAs overlayers have shown great promise. With this approach, threading dislocation densities (TDDs) of approx.1 x 10(exp 6)/sq cm have been uniformly achieved in relaxed Ge layers on Si,5 leading to GaAs on Si with minority carrier lifetimes greater than 10 ns,6 GaAs single junction solar cells on Si with efficiencies greater than 18%,7 InGaAs CW laser diodes on Si,8 and room temperature GaInP red laser diodes on Si.9 Here we report on the first high performance dual junction GaInP/GaAs solar cells grown on Si using this promising SiGe engineered substrate approach.

Ringel, S. A.↗
NASA NTRS1997

The Development of Si and SiGe Technologies for Microwave and Millimeter-Wave Integrated Circuits

Historically, microwave technology was developed by military and space agencies from around the world to satisfy their unique radar, communication, and science applications. Throughout this development phase, the sole goal was to improve the performance of the microwave circuits and components comprising the systems. For example, power amplifiers with output powers of several watts over broad bandwidths, low noise amplifiers with noise figures as low as 3 dB at 94 GHz, stable oscillators with low noise characteristics and high output power, and electronically steerable antennas were required. In addition, the reliability of the systems had to be increased because of the high monetary and human cost if a failure occurred. To achieve these goals, industry, academia and the government agencies supporting them chose to develop technologies with the greatest possibility of surpassing the state of the art performance. Thus, Si, which was already widely used for digital circuits but had material characteristics that were perceived to limit its high frequency performance, was bypassed for a progression of devices starting with GaAs Metal Semiconductor Field Effect Transistors (MESFETs) and ending with InP Pseudomorphic High Electron Mobility Transistors (PHEMTs). For each new material or device structure, the electron mobility increased, and therefore, the high frequency characteristics of the device were improved. In addition, ultra small geometry lithographic processes were developed to reduce the gate length to 0.1 pm which further increases the cutoff frequency. The resulting devices had excellent performance through the millimeter-wave spectrum.

Ponchak, George E.↗
DOE OSTI2024

Telecom Networking with a Diamond Quantum Memory

Practical quantum networks require interfacing quantum memories with existing channels and systems that operate in the telecom band. Here we demonstrate low-noise, bidirectional quantum frequency conversion that enables a solid-state quantum memory to directly interface with telecom-band systems. In particular, we demonstrate conversion of visible-band single photons emitted from a silicon-vacancy ( Si V ) center in diamond to the telecom O band, maintaining low noise ( g 2 ( 0 ) < 0.1 ) and high indistinguishability ( V = 89 ± 8 % ). We further demonstrate the utility of this system for quantum networking by converting telecom-band time-bin pulses, sent across a lossy and noisy 50-km deployed fiber link, to the visible band and entangling them with a diamond quantum memory with fidelity F ≥ 87 ± 2.5 % . These results demonstrate the viability of Si V quantum memories integrated with telecom-band systems for scalable quantum networking applications. Published by the American Physical Society 2024

Physics↗