Search NASA⌕ Search

SEARCH · Search NASA

Results for “SiC power module”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

A Novel Voltage Balancing Control With dv/dt Reduction for 10-kV SiC MOSFET-Based Medium Voltage Modular Multilevel Converter

Using high voltage (HV) silicon carbide (SiC) power semiconductors in a modular multilevel converter (MMC) is promising because it results in fewer submodules and lower switching loss compared to conventional Si based solutions. The nearest level pulsewidth modulation (NL-PWM) is commonly used in the MMC for medium voltage applications. However, with the NL-PWM and existing voltage balancing control, there are many submodules that switch their modes in a control cycle, resulting in a high dv/dt during the deadtime of the power semiconductor, which could be multiple times of the dv/dt of the single device. This poses great challenges on the noise immunity and insulation design in the MMC using HV SiC devices, which have very fast switching speed. A novel voltage balancing control, which ensures only two submodules switch their modes in a control cycle, is proposed in this article, limiting the maximum dv/dt to the dv/dt of a single power semiconductor and also maintaining the voltage balance performance. Furthermore, the proposed voltage balancing control is experimentally validated in a 10-kV SiC mosfet based MMC with four submodules per arm.

42 ENGINEERING↗
DOE OSTI2024

Power Electronics Manufacturing Improvements for Heavy-Duty Fuel Cell Vehicles

The Marel Power Solutions project, funded by the U.S. Department of Energy under Award DE-SC0023801, focused on advancing manufacturing techniques for power electronics in heavy-duty fuel cell vehicles. The research aimed to enhance system efficiency, reduce costs, and support broader adoption of hydrogen fuel cell technology. Key areas of investigation included power topology, thermal modeling, system architecture, and accessibility through software tools. Key Accomplishments: 1. Power Topology: - Developed an interleaved boost converter with optimized phase count, leveraging Marel’s proprietary Power Stacks. - Achieved reduced parasitic inductance and resistance, enabling high efficiency in DC-DC converters. 2. Thermal Modeling: - Integrated innovative cooling systems into compact Silicon Carbide (SiC) modules. - Simulations demonstrated the ability to dissipate significant heat (up to 7.5 kW), ensuring device reliability under heavy loads. 3. System Architecture: - Utilized simulation tools to analyze the impact of various fuel cell and vehicle parameters on efficiency. - Highlighted the role of smaller, modular improvements, such as enhanced DC-DC converters, in achieving system-wide gains. 4. Accessibility: - Evaluated and implemented MATLAB/Simulink code generation tools for real-world hardware applications. - Demonstrated the potential for rapid prototyping of custom power systems with reduced development costs. Impact and Benefits: - Efficiency and Cost Reduction: Marel’s cooling technology enhances SiC die performance, reducing the number of dies required and overall system size. - Scalability and Flexibility: The innovations support tailored solutions for diverse applications, from mass transit to mining vehicles. - Sustainability: The research promotes the integration of electrification technologies, helping meet rising energy demands sustainably. Conclusion: The project’s outcomes advance the state of power electronics for hydrogen fuel cell vehicles, enabling more efficient, compact, and cost-effective solutions. These developments lay a foundation for future innovation, contributing to the broader adoption of clean energy technologies in transportation and other industries.

08 HYDROGEN↗
DOE OSTI2020

Hardware Design and Demonstration of a 100kW, 99% Efficiency Dual Active Half Bridge Converter Based on 1700V SiC Power MOSFET

High efficiency, high density and galvanically isolated power converters are attractive for numerous medium voltage high power applications. This paper presents a 1.5kVdc, 100kW bidirectional Dual Active Half Bridge (DAHB) using newly developed 1.7kV SiC MOSFET modules. The DAHB achieved an efficiency of 98.6% at full load of 100kW and a maximum of 99% at 45kW, operating as an isolated DC/DC converter. The converter also achieved an efficiency of 97.8% operating as an isolated DC/AC inverter. An optimized PCB-based busbar design has significantly reduced the voltage overshoot across the device, making the design suitable for 1500Vdc input application such as 1500V PV inverters. Typical partial discharge inception voltage (PDIV) of the optimized PCB busbar is 1.7kVpeak with total charge <10pC. The power density of the DAHB converter is 1.8MVA/m 3 which is much higher than traditional two-stage industry products. The DAHB converter can be used as a building block for a 4.16kV/1MVA utility scale PV systems with input parallel and output series configuration.

Xu, Wei↗
DOE OSTI2026

Multi-Objective Boundary Analysis of Discrete and Integrated SiC FET Modular Non-inverting Buck and Boost Converters for Fuel Cell EVs

This paper presents a multi-objective analysis of discrete and integrated SiC FET-based non-inverting buck-boost converter modules for modular fuel cell electric vehicle (EV) systems. Two converter ratings, 60 kW and 90 kW, are evaluated for both implementations, scalable up to 420 kW and 450 kW, respectively. Performance is assessed across efficiency, volumetric and gravimetric power density, cost, thermal stress, and estimated lifetime, where lifetime is derived from SiC FET B10 power-cycling data and junction temperature variations at rated power. A normalized overall performance index combined with a Pareto-boundary framework is used to identify configurations that optimally balance competing objectives. Results show that most configurations lie on the Pareto front, providing balanced trade-offs, while certain high-power discrete (90 kW at 450 kW) and integrated (60 kW at 180−420 kW) configurations are dominated. In general, discrete modules are more favorable for lower-power modular systems due to higher power density and lower cost, whereas integrated modules become more advantageous at higher power levels due to improved thermal behavior and longer lifetime. These findings provide practical design guidance for scalable fuel cell converter architectures and highlight the importance of system-level trade-offs in modular power electronics design.

Asa, Erdem [ORNL] (ORCID:0000000190884812)↗
DOE OSTI2020

A New Configuration of Paralleled Modular ANPC Multilevel Converter Controlled by an Improved Modulation Method for 1 MHz, 1 MW EV Charger

In this work, a new configuration of the modular multilevel converter (MLC) based on the parallel connection of three-level active-neutral-point-clamped (3L-ANPC) cells as well as its improved modulation method is proposed for 1 MHz, 1 MW electric vehicle (EV) megacharger. In the proposed paralleled modular ANPC-MLC, only six high-frequency silicon carbide (SiC) power switches operating at 333 kHz are required to generate 1 MHz switching frequency spectrum. Moreover, the operating voltage of all power devices is halved, the magnitude of the first switching frequency harmonic cluster is decreased by the factor of five, and the load current is equally distributed between the 3L-ANPC legs by employing the proposed improved modulation method. Hence, the modularity, efficiency, and power density of the proposed converter are notably increased, whereas the value of passive components and the overall switching loss are remarkably decreased. In addition, an optimized design of the one 3L-ANPC cell of the proposed paralleled modular ANPC-MLC for 1 MHz, 1MW EV megacharger using Ansys SIwave, Icepak, and Q3D finite element method platforms is presented and analyzed in detail. The provided experimental results of the down-scaled setup verify the feasibility and viability of the proposed configuration as well as its improved switching pattern.

42 ENGINEERING↗
DOE OSTI2021

A High-Frequency Planar Transformer with Medium-Voltage Isolation

This paper presents the design of a low-loss, high-frequency planar transformer having medium-voltage (10’s of kV) isolation capability while transformer primary and secondary windings are interleaved to reduce losses. Medium-voltage isolation between adjacent printed circuit board (PCB) layers is extremely challenging using traditional PCB dielectrics. The isolation requirement is met using PCB with 7 kV/mil polyimide (Panasonic Felios RF775) as the dielectric, and by an appropriate layout of the windings and the inter-winding vias. The transformer is used to implement a dual active bridge (DAB) converter in a stackable dc-ac architecture where the dc port is connected to a photovoltaic (PV) string and ac outputs are connected in series to achieve direct PV string-to-medium voltage conversion without the need for low-voltage collection or a bulky line frequency transformer. Since each DAB transformer processes time-varying power, a design methodology is developed to minimize line-cycle-averaged losses. Experimental results are presented for a 1:1 planar transformer in a 7.5 kW SiC-based dc-to-ac module operating at 200 kHz. Isolation of 26 kV between the primary and secondary layers and between the windings and the core is verified using a hipot tester.

insulation resistance↗
DOE OSTI2021

A High-Frequency Planar Transformer with Medium-Voltage Isolation: Preprint

This paper presents the design of a low-loss, high-frequency planar transformer having medium-voltage (10's of kV) isolation capability while transformer primary and secondary windings are interleaved to reduce losses. Medium-voltage isolation between adjacent printed circuit board (PCB) layers is extremely challenging using traditional PCB dielectrics. The isolation requirement is met using PCB with $7$\,kV/mil polyimide (Panasonic Felios RF775) as the dielectric, and by an appropriate layout of the windings and the inter-winding vias. The transformer is used to implement a dual active bridge (DAB) converter in a stackable dc-ac architecture where the dc port is connected to a photovoltaic (PV) string and ac outputs are connected in series to achieve direct PV string-to-medium voltage conversion without the need for low-voltage collection or a bulky line frequency transformer. Since each DAB transformer processes time-varying power, a design methodology is developed to minimize line-cycle-averaged losses. Experimental results are presented for a 1:1 planar transformer in a 7.5\,kW SiC-based dc-to-ac module operating at 200 kHz. Isolation of 26 kV between the primary and secondary layers and between the windings and the core is verified using a hipot tester.

41 EE - Solar Energy Technologies Office (EE-4S)↗
DOE OSTI2022

Design Considerations for Developing 1.2 kV 4H-SiC BiDFET-enabled Power Conversion Systems

Bidirectional switches are essential for cycloconverter and matrix converter applications to facilitate single-stage AC-AC conversion without intermediate energy storage elements. The 1.2 kV 4H-SiC BiDFET was developed as the first monolithic bidirectional SiC power transistor. This paper describes the design considerations taken into account while creating the BiDFET device and developing custom packages for housing the switch in discrete form for low power applications and in module form for high-power applications. The realized switches are characterized for their on-state and switching performance. The versatility of the BiDFET device is demonstrated by operating a single BiDFET H-bridge in voltage-source-inverter and current-source-inverter topologies only by varying the gate bias on the individual BiDFETs and reversing the input-output connections.

Bidirectional, Silicon Carbide, Half-Bridge Module↗
DOE OSTI2023

Next-Generation Modular Flexible Low-Cost SiC-based High-Frequency-Link Transformer (Final Technical Report)

This project, led by the small business NextWatt LLC, led to the design and development of a novel high-frequency-link (HFL) transformer that yields reduce number of semiconductor devices compared to conventional solid-state transformers (SSTs). The HFL transformer is based on SiC device technology and nanocrystalline-core-based magnetics techniology. The control actuation of the SiC devices are algorithmically implemented in digital signal processor (DSP) platform. The overall HFL transformer technology is conceived and developed using a modular approach. During the course of the project the novel technology and its experimental performances at the module, multi-phase, and cascaded multi-phase levels have been demonstrated to the sponsor U.S. Department of Energy (DOE).

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2024

High-Temperature Wireless Sensor Platform Powered by Energy Scavenging

This paper reports on the development of key components required for a self-powered oscillator unit designed to wirelessly transmit its signal under full insertion in high-temperature (HT) harsh-environments (HE), such as those present in power plants and industrial settings (metallurgic, oil extraction, molding, and aerospace). The oscillator employed a silicon carbide (SiC) power transistor and HT passive components on a screen-printed alumina circuit board capable of operation beyond 300 °C. The HT oscillator circuit was powered solely by in-situ energy scavenging thermoelectric generator (TEG) modules using passive cooling, eliminating the need for an external power supply or active cooling. In addition, a silicon-based external booster circuit was used to achieve the required TEG voltage regulation to test the TEG-powered HT oscillator circuit. The TEG-powered oscillator circuit was tested inside a non-metallic furnace from room temperature to over 300 °C for transmission of a wireless signal, which was detected outside the furnace at 11 ft (3.4 m). Such a wireless transmitting system powered only by in-situ TEGs, with no requirement for external power or active cooling, is very attractive for flexible, mobile stand-alone control and sensor units targeted for operation in HT HE conditions found in power plants and industrial settings.

20 FOSSIL-FUELED POWER PLANTS↗
DOE OSTI2020

Packaging Development for a 1200V SiC BiDFET Switch Using Highly Thermally Conductive Organic Epoxy Laminate

A novel 1.2 kV/10A, 4H-SiC monolithic, bidirectional switch has been developed for use in cycloconverter applications to facilitate high-frequency direct AC-to-AC power conversion and enables new power converter topologies. A new packaging solution, utilizing a 100 µm flexible polyimide organic laminate substrate is developed to mitigate thermo-mechanical stress during power cycling and enable smaller form factor and lower cost. Multiphysics simulations and static tests were conducted to show performance characterization of the module and compare it against metallic substrates. A new organic laminate epoxy resin composite dielectric (ERCD) is also evaluated for superior thermal performance and shows 63% reduction in junction to case resistance compared to DBC substrates.

Silicon Carbide, Bi-directional switch, BiDFET, MO↗
DOE OSTI2020

A Single-Stage Isolated Resonant SiC DC/AC Inverter for Efficient High-Power Applications

This paper presents a single-stage series-resonant dual active half bridge (SR-DAHB) inverter suitable for high power applications. The topology is an isolated dual half-bridge circuit with an unfolding bridge. A combined phase-shift and frequency modulation technique is utilized to generate AC power output. In high-power applications where the switching devices operate at relatively high current and voltage, the switching loss becomes the major portion of the converter’s total loss as the devices are turned on and off under hard switching condition. The primary merit of the proposed single-stage SR-DAHB inverter with the combined phase-shift and frequency modulation control is to significantly reduce the switching loss so that it is not a function of load current. A precise and comprehensive power loss model is developed for both the SR-DAHB and DAHB to optimize the operation of the inverters. The objective of the optimization is to minimize the inverter total loss while calculating the optimum combination of frequency and phase shift. A 1.5 kV, 50 kW prototype was built to demonstrate the performance of the SRDAHB versus DAHB inverters with the combined phase-shift and frequency modulation control, and validate the theoretical analysis.

Tayebi, S. Milad↗
DOE OSTI2021

Packaging of an 8-kV Silicon Carbide Diode Module with Double-Side Cooling and Sintered-Silver Joints

Packaging innovations are needed for medium-voltage wide bandgap power semiconductor modules to enable their adaptation in grid applications. A unique challenge for packaging medium-voltage power modules is managing the trade-off between insulation demand and heat dissipation. The focus of this work was on developing a packaging innovation that improves the module heat dissipation and offers more flexibility to its insulation design. Two strategies were explored for the packaging of an 8-kV SiC diode rectifier module:(1) double-side cooling and (2) sintered-silver bonding. Double-side cooling was realized by using short metal posts rather than long and thin wire bonds for device interconnection, forming a low-profile package with devices sandwiched between two insulated metal substrates. Sintered-silver bonding enabled the devices to function reliably at over 250 °C. Simulations of the packaged module showed a low interconnect inductance of 2.67 nH and a 50% less heat transfer coefficient required to cool the chips. Prototypes of the module were fabricated, and preliminary electrical testing results validated the package design.

27 ARPA - Advanced Research Projects Agency-Energy↗
DOE OSTI2026

World’s First Vertical GaN based High Power (200 kW) Multi-level Traction Electric Drive Design

Vertical GaN (vGaN) technology leverages a fully conductive 3D semiconductor structure, enabling superior power density compared to GaN-on-Si and other wide bandgap devices. It offers a pathway to surpass cost and efficiency limitations of Si and SiC devices in traction applications. However, scaling for high-voltage, high-power systems remains challenging. This paper presents the design of an 800V, 200kW traction inverter utilizing vertical GaN devices. The inverter achieves ultra-high efficiency (> 99.5%) through advanced power module integration and employs multilevel neutral-point-less X-type (NPL.X) inverter topology to ensure optimal traction drive system performance. These innovations demonstrate the potential of vGaN for next￾generation electric propulsion systems.

Alam, Khorshed [General Motors LLC, Detroit, MI (U↗
DOE OSTI2022

1 kV, 10-kW SiC-Based Quadruple Active Bridge DCX Stage in a DC to Three-Phase AC Module for Medium-Voltage Grid Integration

Interfacing low voltage dc to medium voltage three-phase ac grid is often based on series-stackable modular converter architectures. To minimize energy storage requirements, it is advantageous to employ a quadruple active bridge (QAB) stage operating as a "dc transformer" in each stackable module. The QAB stage offers three isolated dc link voltages, which then allow for flexible stacking of three single-phase dc-to-ac inverter stages. Each of the module phases processes a pulsating power having a component at twice the line frequency. This presents a challenge in maintaining zero voltage switching (ZVS) on the secondary sides of the QAB during low-power portions of the line cycle. This article is focused on the design of the QAB stage. A detailed analysis of ZVS switching waveforms is presented, including effects of nonlinear device capacitances. It is shown how ZVS can be achieved at all times using a relatively small circulating current provided by the magnetizing inductance of the high-frequency transformer. Analytical expressions are given for the optimal values of the magnetizing inductance and the dead times of the QAB primary and secondary bridges. This approach is verified by experimental results on a 1 kV, 10-kW SiC-based prototype, demonstrating a relatively flat efficiency curve with a peak efficiency of 97.1% at 75% load.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2023

Comprehensive Efficiency Analysis of Seven-Switch Current-Source Inverter Based on Voltage-Boost Function and Genetic Algorithm

This paper investigates the voltage-boost features of the emerging seven-switch current-source inverter (H7-CSI) to improve the efficiency of the CSI-based motor drive system. The switching transient and power loss model of the H7-CSI topology during voltage-boost operation are analyzed in detail. The effects of the boost function on the switching and conduction loss of the H7-CSI topology are investigated. A genetic algorithm has been introduced that makes it possible to optimize the H7-CSI’s modulation index to minimize its power loss. Experimental results for the H7-CSI unit show that this optimization can reduce the power loss by 10.6%.

42 ENGINEERING↗
DOE OSTI2023

Bidirectional Three-phase Current Source Converter based Buck-boost AC/DC System using Bidirectional Switches

The 1.2 kV 4H-SiC BiDirectional Field Effect Transistor (BiDFET) is the first monolithic SiC bidirectional switch, which offers a lower voltage drop and semiconductor devices count alternative to the reverse-voltage-blocking (RB) switch used in the current-source converters (CSC). The bidirectional switch based CSC also allows DC-link current reversal for bidirectional power flow and provides multiple system-level benefits in a buck-boost AC/DC system consisting of buck-type DC/DC converter and CSC. This paper discusses the selection of buck converter duty cycle and CSC modulation index for the system’s buck-boost operation with a wide variation in DC voltage. CSC modulation schemes categorized based on the number of hard-turn-on transitions per switching cycle are also analyzed along with the three-step and four-step commutation schemes that are essential for the CSC commutation cells. Finally, the different schemes are evaluated and compared through the experimental results of a 10 kW, 480 VRMS, LL/ (400 − 800) V AC/DC system.

Bidirectional switches, four-quadrant switches, cu↗