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At least 73 records · Page 4

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NASA NTRS2008

Effect of Upper-Cycle Temperature on the Load-Biased, Strain-Temperature Response of NiTi

Over the past decade, interest in shape memory alloy based actuators has increased as the primary benefits of these solid-state devices have become more apparent. However, much is still unknown about the characteristic behavior of these materials when used in actuator applications. Recently we have shown that the maximum temperature reached during thermal cycling under isobaric conditions could significantly affect the observed mechanical response of NiTi (55 wt% Ni), especially the amount of transformation strain available for actuation and thus work output. This investigation extends that original work to ascertain whether further increases in the upper-cycle temperature would produce additional improvement in the work output of the material, which has a stress-free Af of 113 oC, and to determine the optimum cyclic conditions. Thus, isobaric, thermal-cycle experiments were conducted in the aforementioned alloy at various stress levels from 50-300 MPa using upper-cycle temperatures of 165, 200, 230, 260, 290, 320 and 350 oC. The data indicated that the amount of applied stress influenced the transformation strain available in the system, as would be expected. However, the maximum temperature reached during the thermal excursion also plays a role in determining the transformation strain, with the maximum transformation strain being developed by thermal cycling to 290 oC. In situ, neutron diffraction showed that the differences in transformation strain were related to differences in martensite texture within the microstructure when cycling to different upper-cycle temperatures. Hence, understanding this effect is important to optimizing the operation of SMA-based actuators and could lead to new methods for processing and training shape memory alloys for optimal performance.

Padula, Santo, II↗

NASA NTRS2011

Effect of Upper-Cycle Temperature on the Load-Biased, Strain-Temperature Response of NiTi

Over the past decade, interest in shape memory alloy based actuators has increased as the primary benefits of these solid-state devices have become more apparent. However, much is still unknown about the characteristic behavior of these materials when used in actuator applications. Recently we have shown that the maximum temperature reached during thermal cycling under isobaric conditions could significantly affect the observed mechanical response of NiTi (55 wt% Ni), especially the amount of transformation strain available for actuation and thus work output. The investigation we report here extends that original work to ascertain whether further increases in the upper-cycle temperature would produce additional changes in the work output of the material, which has a stress-free austenite finish temperature of 113 C, and to determine the optimum cyclic conditions. Thus, isobaric, thermal-cycle experiments were conducted on the aforementioned alloy at various stresses from 50-300 MPa using upper-cycle temperatures of 165, 200, 230, 260, 290, 320 and 350 C. The data indicated that the amount of applied stress influenced the transformation strain, as would be expected. However, the maximum temperature reached during the thermal excursion also plays an equally significant role in determining the transformation strain, with the maximum transformation strain observed during thermal cycling to 290 C. In situ neutron diffraction at stress and temperature showed that the differences in transformation strain were mostly related to changes in martensite texture when cycling to different upper-cycle temperatures. Hence, understanding this effect is important to optimizing the operation of SMA-based actuators and could lead to new methods for processing and training shape memory alloys for optimal performance.

Padula, Santo, II↗

NASA NTRS2010

Ion conducting organic/inorganic hybrid polymers

This invention relates to a series of organic/inorganic hybrid polymers that are easy to fabricate into dimensionally stable films with good ion-conductivity over a wide range of temperatures for use in a variety of applications. The polymers are prepared by the reaction of amines, preferably diamines and mixtures thereof with monoamines with epoxy-functionalized alkoxysilanes. The products of the reaction are polymerized by hydrolysis of the alkoxysilane groups to produce an organic-containing silica network. Suitable functionality introduced into the amine and alkoxysilane groups produce solid polymeric membranes which conduct ions for use in fuel cells, high-performance solid state batteries, chemical sensors, electrochemical capacitors, electro-chromic windows or displays, analog memory devices and the like.

Meador, Maryann B.↗

NASA NTRS1990

Data storage technology comparisons

The role of data storage and data storage technology is an integral, though conceptually often underestimated, portion of data processing technology. Data storage is important in the mass storage mode in which generated data is buffered for later use. But data storage technology is also important in the data flow mode when data are manipulated and hence required to flow between databases, datasets and processors. This latter mode is commonly associated with memory hierarchies which support computation. VLSI devices can reasonably be defined as electronic circuit devices such as channel and control electronics as well as highly integrated, solid-state devices that are fabricated using thin film deposition technology. VLSI devices in both capacities play an important role in data storage technology. In addition to random access memories (RAM), read-only memories (ROM), and other silicon-based variations such as PROM's, EPROM's, and EEPROM's, integrated devices find their way into a variety of memory technologies which offer significant performance advantages. These memory technologies include magnetic tape, magnetic disk, magneto-optic disk, and vertical Bloch line memory. In this paper, some comparison between selected technologies will be made to demonstrate why more than one memory technology exists today, based for example on access time and storage density at the active bit and system levels.

Katti, Romney R.↗

NASA NTRS2008

Influence of Test Procedures on the Thermomechanical Properties of a 55NiTi Shape Memory Alloy

Over the past few decades, binary NiTi shape memory alloys have received attention due to their unique mechanical characteristics, leading to their potential use in low-temperature, solid-state actuator applications. However, prior to using these materials for such applications, the physical response of these systems to mechanical and thermal stimuli must be thoroughly understood and modeled to aid designers in developing SMA-enabled systems. Even though shape memory alloys have been around for almost five decades, very little effort has been made to standardize testing procedures. Although some standards for measuring the transformation temperatures of SMA s are available, no real standards exist for determining the various mechanical and thermomechanical properties that govern the usefulness of these unique materials. Consequently, this study involved testing a 55NiTi alloy using a variety of different test methodologies. All samples tested were taken from the same heat and batch to remove the influence of sample pedigree on the observed results. When the material was tested under constant-stress, thermal-cycle conditions, variations in the characteristic material responses were observed, depending on test methodology. The transformation strain and irreversible strain were impacted more than the transformation temperatures, which only showed an affect with regard to applied external stress. In some cases, test methodology altered the transformation strain by 0.005-0.01mm/mm, which translates into a difference in work output capability of approximately 2 J/cu cm (290 in!lbf/cu in). These results indicate the need for the development of testing standards so that meaningful data can be generated and successfully incorporated into viable models and hardware. The use of consistent testing procedures is also important when comparing results from one research organization to another. To this end, differences in the observed responses will be presented, contrasted and rationalized, in hopes of eventually developing standardized testing procedures for shape memory alloys.

Padula, Santo A., II↗

NASA NTRS1990

Solid-state thin-film memistor for electronic neural networks

This paper reports on a tungsten-oxide-based, nonvolatile, electrically reprogrammable, variable resistance device as an analog synaptic memory connection for electronic neural networks. A voltage controlled, reversible injection of H(+) ions in electrochromic thin films of WO3 is utilized to modulate its resistance. A hygroscopic thin film of Cr2O3 is the source of H(+) ions. The resistance of the device can be tailored and stabilized over a wide dynamic range (about 4 orders of magnitude), and the programming speed is modulated by the control voltage. The suitability of such a device in terms of its response speed, reversibility, stability, and cyclability for its use in electronic neural networks is discussed.

Thakoor, S.↗

NASA NTRS1976

A high speed imaging system for nuclear diagnostics

A high speed imaging system based on state-of-the-art photosensor arrays was designed for use in nuclear diagnostics. The system is comprised of a front end rapid scan solid state camera, a high speed digitizer, and a PCM line driver in a downhole package and a memory buffer system in an uphole trailer. The downhole camera takes a snapshot of a nuclear device created flux stream, digitizes the image and transmits it to the uphole memory system before being destroyed. The memory system performs two functions: it retains the data for local display and processing by a microprocessor, and it buffers the data for retransmission at slower rates to a computational facility. In the talk, the impetus for such a system as well as its operation was discussed, along with systems under development which incorporate higher data rates and more resolution.

Eyer, H. H.↗

NASA NTRS1977

Application of the endochronic theory of viscoplasticity to solid propellants and sandasphalt concrete

Solid propellants, sand-asphalt concrete and hard plastics showed rate sensitive mechanical behavior which, in addition, indicated that these materials have a permanent memory of the strain (or loading) path by which their present state was attained. A constitutive equation was formulated in general three dimensional tensorial form by means of irreversible thermodynamics. By using a very simple analytical form, it was shown that the mechanical behavior of solid propellants and sand-asphalt concrete can be readily described.

Peng, S. T. J.↗

NASA NTRS2002

Assessment of Various Flow Solvers Used to Predict the Thermal Environment inside Space Shuttle Solid Rocket Motor Joints

It is very important to accurately predict the gas pressure, gas and solid temperature, as well as the amount of O-ring erosion inside the space shuttle Reusable Solid Rocket Motor (RSRM) joints in the event of a leak path. The scenarios considered are typically hot combustion gas rapid pressurization events of small volumes through narrow and restricted flow paths. The ideal method for this prediction is a transient three-dimensional computational fluid dynamics (CFD) simulation with a computational domain including both combustion gas and surrounding solid regions. However, this has not yet been demonstrated to be economical for this application due to the enormous amount of CPU time and memory resulting from the relatively long fill time as well as the large pressure and temperature rising rate. Consequently, all CFD applications in RSRM joints so far are steady-state simulations with solid regions being excluded from the computational domain by assuming either a constant wall temperature or no heat transfer between the hot combustion gas and cool solid walls.

Wang, Qun-Zhen↗

NASA NTRS1980

Eight microprocessor-based instrument data systems in the Galileo Orbiter spacecraft

Instrument data systems consist of a microprocessor, 3K bytes of Read Only Memory and 3K bytes of Random Access Memory. It interfaces with the spacecraft data bus through an isolated user interface with a direct memory access bus adaptor, and/or parallel data from instrument devices such as registers, buffers, analog to digital converters, multiplexers, and solid state sensors. These data systems support the spacecraft hardware and software communication protocol, decode and process instrument commands, generate continuous instrument operating modes, control the instrument mechanisms, acquire, process, format, and output instrument science data.

Barry, R. C.↗

NASA NTRS2007

Correlation between Mechanical Behavior and Actuator-type Performance of Ni-Ti-Pd High-temperature Shape Memory Alloys

High-temperature shape memory alloys in the NiTiPd system are being investigated as lower cost alternatives to NiTiPt alloys for use in compact solid-state actuators for the aerospace, automotive, and power generation industries. A range of ternary NiTiPd alloys containing 15 to 46 at.% Pd has been processed and actuator mimicking tests (thermal cycling under load) were used to measure transformation temperatures, work behavior, and dimensional stability. With increasing Pd content, the work output of the material decreased, while the amount of permanent strain resulting from each load-biased thermal cycle increased. Monotonic isothermal tension testing of the high-temperature austenite and low temperature martensite phases was used to partially explain these behaviors, where a mismatch in yield strength between the austenite and martensite phases was observed at high Pd levels. Moreover, to further understand the source of the permanent strain at lower Pd levels, strain recovery tests were conducted to determine the onset of plastic deformation in the martensite phase. Consequently, the work behavior and dimensional stability during thermal cycling under load of the various NiTiPd alloys is discussed in relation to the deformation behavior of the materials as revealed by the strain recovery and monotonic tension tests.

Bigelow, Glen S.↗

NASA NTRSDate not supplied

Solid State Drive Radiation Assurance With Active Testing

Automotive and industrial grade SSDs were tested for TID and SEE response at the assembly level to investigate radiation tolerance trends and explore radiation hardness assurance best practices in commercial memory devices. SSDs were installed in passive NVMe extenders to place only the drive in the beam line. A digital I/O module connected to the test computer provided inhibit signals to block both facility beam delivery and power while attempting recovery from any device failure conditions (e.g., failed write, failed read, or unresponsive device).

Edward P Wilcox↗

NASA NTRS1995

Solar Particle Induced Upsets in the TDRS-1 Attitude Control System RAM During the October 1989 Solar Particle Events

The three large solar particle events, beginning on October 19, 1989 and lasting approximately six days, were characterized by high fluences of solar protons and heavy ions at 1 AU. During these events, an abnormally large number of upsets (243) were observed in the random access memory of the attitude control system (ACS) control processing electronics (CPE) on-board the geosynchronous TDRS-1 (Telemetry and Data Relay Satellite). The RAM unit affected was composed of eight Fairchild 93L422 memory chips. The Galileo spacecraft, launched on October 18, 1989 (one day prior to the solar particle events) observed the fluxes of heavy ions experienced by TDRS-1. Two solid-state detector telescopes on-board Galileo, designed to measure heavy ion species and energy, were turned on during time periods within each of the three separate events. The heavy ion data have been modeled and the time history of the events reconstructed to estimate heavy ion fluences. These fluences were converted to effective LET spectra after transport through the estimated shielding distribution around the TDRS-1 ACS system. The number of single event upsets (SEU) expected was calculated by integrating the measured cross section for the Fairchild 93L422 memory chip with average effective LET spectrum. The expected number of heavy ion induced SEU's calculated was 176. GOES-7 proton data, observed during the solar particle events, were used to estimate the number of proton-induced SEU's by integrating the proton fluence spectrum incident on the memory chips, with the two-parameter Bendel cross section for proton SEU'S. The proton fluence spectrum at the device level was gotten by transporting the protons through the estimated shielding distribution. The number of calculated proton-induced SEU's was 72, yielding a total of 248 predicted SEU'S, very dose to the 243 observed SEU'S. These calculations uniquely demonstrate the roles that solar heavy ions and protons played in the production of SEU's during the October 1989 solar particle events.

Croley, D. R.↗

NASA NTRS1969

Technique for improving solid state mosaic images

Method identifies and corrects mosaic image faults in solid state visual displays and opto-electronic presentation systems. Composite video signals containing faults due to defective sensing elements are corrected by a memory unit that contains the stored fault pattern and supplies the appropriate fault word to the blanking circuit.

Saboe, J. M.↗

NASA NTRS2000

In-flight observations of multiple-bit upset in DRAMs

In-flight data is examined showing a very high incidence of multiple-bit errors in a solid-state recorder that incorporates error detection and correction. The high MBU rate is shown to be a consequence of the physical selection of memory cell locations in the recorder architecture.

single↗

NASA NTRS1980

On-board processing concepts for future satellite communications systems

The initial definition of on-board processing for an advanced satellite communications system to service domestic markets in the 1990's is discussed. An exemplar system with both RF on-board switching and demodulation/remodulation baseband processing is used to identify important issues related to system implementation, cost, and technology development. Analyses of spectrum-efficient modulation, coding, and system control techniques are summarized. Implementations for an RF switch and baseband processor are described. Among the major conclusions listed is the need for high gain satellites capable of handling tens of simultaneous beams for the efficient reuse of the 2.5 GHz 30/20 frequency band. Several scanning beams are recommended in addition to the fixed beams. Low power solid state 20 GHz GaAs FET power amplifiers in the 5W range and a general purpose digital baseband processor with gigahertz logic speeds and megabits of memory are also recommended.

Brandon, W. T.↗

NASA NTRS1999

Time-Shifted Boundary Conditions Used for Navier-Stokes Aeroelastic Solver

Under the Advanced Subsonic Technology (AST) Program, an aeroelastic analysis code (TURBO-AE) based on Navier-Stokes equations is currently under development at NASA Lewis Research Center s Machine Dynamics Branch. For a blade row, aeroelastic instability can occur in any of the possible interblade phase angles (IBPA s). Analyzing small IBPA s is very computationally expensive because a large number of blade passages must be simulated. To reduce the computational cost of these analyses, we used time shifted, or phase-lagged, boundary conditions in the TURBO-AE code. These conditions can be used to reduce the computational domain to a single blade passage by requiring the boundary conditions across the passage to be lagged depending on the IBPA being analyzed. The time-shifted boundary conditions currently implemented are based on the direct-store method. This method requires large amounts of data to be stored over a period of the oscillation cycle. On CRAY computers this is not a major problem because solid-state devices can be used for fast input and output to read and write the data onto a disk instead of storing it in core memory.

Srivastava, Rakesh↗

NASA NTRS1993

The SAMPEX Data Processing Unit

The paper discusses salient features of the SAMPEX Data Processing Unit (DPU), the primary function of which is to collect sensor data to create telemetry packets for transmission to the solid-state recorder located within the Small Explorer Data System. Particular attention is given to the sensor interface electronics, the space command interface, the spacecraft telemetry interface, and the memory mapper of the DPU system; the task scheduling concept; and system reconfiguring. A block diagram of the DPU system is included.

Mabry, D. J.↗