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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Enhanced spin pumping in heterostructures of coupled ferrimagnetic garnets

Spin pumping has significant implications for spintronics, providing a mechanism to manipulate and transport spins for information processing. Understanding and harnessing spin currents through spin pumping is critical for the development of efficient spintronic devices. The use of a magnetic insulator with low damping enhances the signal-to-noise ratio in crucial experiments such as spin-torque ferromagnetic resonance (FMR) and spin pumping. A magnetic insulator coupled with a heavy metal or quantum material offers a more straightforward model system, especially when investigating spin-charge interconversion processes to greater accuracy. This simplicity arises from the absence of unwanted effects caused by conduction electrons unlike in ferromagnetic metals. Here, we investigate the spin pumping in coupled ferrimagnetic (FiM) Y 3 Fe 5 O 12 (YIG)/Tm 3 Fe 5 O 12 (TmIG) bilayers combined with heavy-metal (Pt) using the inverse spin Hall effect. It is observed that magnon transmission occurs at both of the FiMs FMR positions. The enhancement of spin pumping voltage (V sp ) in the FiM garnet heterostructures is observed. The plausible reason might be the interfacial exchange coupling between FiMs. The modulation of V sp is achieved by tuning the bilayer structure. Further, the spin mixing conductance for these coupled systems is found to be ≈ 10 18 m –2 . Furthermore, our findings describe a coupled FiM system for the investigation of magnon coupling providing opportunities for magnonic devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

Opposite current-induced spin polarizations in bulk-metallic Bi 2 Se 3 and bulk-insulating Bi 2 Te 2 Se topological insulator thin flakes

One of the most fundamental and exotic properties of three-dimensional (3D) topological insulators (TIs) is spin-momentum locking (SML) of their topological surface states (TSSs), promising for potential applications in future spintronics. However, other possible conduction channels, such as a trivial two-dimensional electron gas (2DEG) with strong Rashba-type spin-orbit interaction (SOI) and bulk-conducting states that may possess a spin Hall effect (SHE), can coexist in 3D TIs, making determining the origin of the current-induced spin polarization (CISP) difficult. Here, we directly compared the CISP between bulk-insulating Bi 2 Te 2 Se (BTS221) and bulk-metallic Bi2Se3 thin flakes using spin potentiometry. In the bulk-insulating BTS221, the observed CISP has a sign consistent with the expected helicity of the SML of the TSS, but an opposite sign to its calculated bulk spin Hall conductivity. However, compared to BTS221, an opposite CISP is observed in the bulk-metallic Bi2Se3, consistent with both the expectations of its Rashba-Edelstein effect of the band-bending induced 2DEG and bulk intrinsic spin Hall Effect (SHE). If one assumes a representative occupation of the Rashba band of 3×10 13 cm –2 in Bi 2 Se 3 with a relevant relaxation time of 100 fs, the contribution to the CISP could be more dominated by the bulk intrinsic SHE. Our results provide an electrical way to distinguish the TSS from other possible conducting channels in spin transport measurements on 3D TIs, and open ways for the potential applications in charge-spin conversion devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Spin Hall effect of vorticity

Using mapping between topological defects in an easy-plane magnet and electrical charges, we study interplay between vorticity and spin currents. Here, we demonstrate that the flow of vorticity is accompanied by the transverse spin current generation; an effect which can be termed as the spin Hall effect of vorticity. We study this effect across the BKT transition and establish the role of dissipation and spin nonconservation in the crossover from spin superfluidity to diffusive spin transport. Our results pave the way for low power computing devices relying on vorticity and spin flows that can propagate over long distances.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Polarization Transport in the ERL-ERL FCC e + e - Collider

An alternative approach for the Future Circular electron-positron Collider uses energy recovery linac recirculators to mitigate the otherwise enormous power consumption needed to compensate 100 MW of beam energy losses by synchrotron radiation in a ring-ring design. This approach would also allow to extend CM energy to 500 GeV (or above) for double Higgs production. An additional advantage of the ERL-ERL scheme is its allowing polarized e + e - beam collision. A 100 km, 6250cell, 220 GeV loop is subjected to polarized bunch transport simulations. A linear Fixed Field Alternating gradient (FFA) design is also assessed as to spin transport.

43 PARTICLE ACCELERATORS↗
DOE OSTI2020

Generalized magnetoelectronic circuit theory and spin relaxation at interfaces in magnetic multilayers

Spin transport at metallic interfaces is an essential ingredient of various spintronic device concepts, such as giant magnetoresistance, spin-transfer torque, and spin pumping. Spin-orbit coupling plays an important role in many such devices. In particular, spin current is partially absorbed at the interface due to spin-orbit coupling. Here, we develop a general magnetoelectronic circuit theory and generalize the concept of spin-mixing conductance, accounting for various mechanisms responsible for spin-flip scattering. For the special case when exchange interactions dominate, we give a simple expression for the spin-mixing conductance in terms of the contributions responsible for spin relaxation (i.e., spin memory loss), spin torque, and spin precession. The spin memory loss parameter d is related to spin-flip transmission and reflection probabilities. There is no straightforward relation between spin torque and spin memory loss. We calculate the spin-flip scattering rates for N|N, F|N, and F|F interfaces using the Landauer-Büttiker method within the linear muffin-tin orbital method and determine the values of d using circuit theory.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Spin polarization and correlation of quarks from the glasma

We investigate the interaction of strong color fields in the glasma stage of high-energy nuclear collisions with the spins of quarks and antiquarks. We employ the perturbative solution of the quantum kinetic theory for the spin transport of (massive) quarks in a background color field governed by the linearized Yang-Mills equation and derive expressions for the quark-spin polarization and quark-antiquark spin correlation at small momentum in terms of field correlators. For the Golec-Biernat–Wusthoff dipole distribution the quark-spin polarization vanishes, but the out-of-plane spin correlation of quarks and antiquarks is nonzero. Our order-of-magnitude estimate of the correlation far exceeds that caused by vorticity effects, but does not fully explain the data for vector meson alignment. We identify possible mechanisms that could further increase the predicted spin correlation.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2025

Probing polarization-tunable sub-terahertz spin pumping in bimodal α-Fe 2 O 3 /Pt

Hematite (α-Fe 2 O 3 ) is an insulating antiferromagnet possessing a room temperature canted phase induced by the super-exchange Dzyaloshinskii-Moriya Interaction (DMI), resulting in enhanced spin pumping and spin transport over uniaxial antiferromagnets. In this work we resonantly excite the quasi-ferromagnetic (acoustic) and purely antiferromagnetic (optical) spin-dynamical modes in bulk and thin-film heterostructures of α-Fe 2 O 3 /Pt at room temperature, inducing inverse-spin-Hall-voltages up to 255 GHz. Following recent measurements of optical-mode spin-pumping in α-Fe 2 O 3 , we observe a novel and exotic microwave polarization mapping along with amplified spin-charge conversion in the optical branch and discuss the implications of layer thickness on acoustic and optical spin-modes. The results provide a deeper understanding of spin-wave selection rules for canted antiferromagnets and their potential use in nanoscale terahertz spintronics.

interfaces↗
DOE OSTI2020

Magnetic Damping Modulation in IrMn 3 / Ni 80 Fe 20 via the Magnetic Spin Hall Effect

Noncollinear antiferromagnets can have additional spin Hall effects due to the net chirality of their magnetic spin structure, which provides for more complex spin-transport phenomena compared to ordinary nonmagnetic materials. Here we investigated how ferromagnetic resonance of permalloy (Ni 80 Fe 20 ) is modulated by spin Hall effects in adjacent epitaxial IrMn 3 films. We observe a large dc modulation of the ferromagnetic resonance linewidth for currents applied along the [001] IrMn 3 direction. Furthermore, this very strong angular dependence of spin-orbit torques from dc currents through the bilayers can be explained by the magnetic spin Hall effect where IrMn 3 provides novel pathways for modulating magnetization dynamics electrically.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

Long-range current-induced spin accumulation in chiral crystals

Abstract Chiral materials, similarly to human hands, have distinguishable right-handed and left-handed enantiomers which may behave differently in response to external stimuli. Here, we use for the first time an approach based on the density functional theory (DFT)+PAOFLOW calculations to quantitatively estimate the so-called collinear Rashba–Edelstein effect (REE) that generates spin accumulation parallel to charge current and can manifest as chirality-dependent charge-to-spin conversion in chiral crystals. Importantly, we reveal that the spin accumulation induced in the bulk by an electric current is intrinsically protected by the quasi-persistent spin helix arising from the crystal symmetries present in chiral systems with the Weyl spin–orbit coupling. In contrast to conventional REE, spin transport can be preserved over large distances, in agreement with the recent observations for some chiral materials. This allows, for example, the generation of spin currents from spin accumulation, opening novel routes for the design of solid-state spintronics devices.

Roy, Arunesh↗
DOE OSTI2020

Effective spin-mixing conductance of topological-insulator/ferromagnet and heavy-metal/ferromagnet spin-orbit-coupled interfaces: A first-principles Floquet-nonequilibrium Green function approach

The spin-mixing conductance (SMC) is a key quantity determining efficiency of spin transport across interfaces. Thus, knowledge of its precise value is required for accurate measurement of parameters quantifying numerous effects in spintronics, such as spin-orbit torque, spin Hall magnetoresistance, spin Hall effect, and spin pumping. However, the standard expression for SMC, provided by the scattering theory in terms of the reflection probability amplitudes, is inapplicable when strong spin-orbit coupling (SOC) is present directly at the interface. This is the precisely the case of topological-insulator/ferromagnet and heavy-metal/ferromagnet interfaces of great contemporary interest. We introduce an approach where first-principles Hamiltonian of these interfaces, obtained from noncollinear density functional theory (ncDFT) calculations, is combined with charge-conserving Floquet-nonequilibrium-Green-function formalism to compute directly the pumped spin current $I^{S_z}_L$ into semi-infinite left lead of two-terminal heterostructures Cu/X/Co/Cu or Y/Co/Cu—where X = Bi 2 Se 3 and Y = Pt or W—due to microwave-driven steadily precessing magnetization of the Co layer. This allows us to extract an effective SMC as a prefactor in $I^{S_z}_L$ versus precession cone angle θ dependence, as long as it remains the same, $I^{S_z}$ ∝ sin 2 θ , as in the case where SOC is absent. By comparing calculations where SOC in switched off versus switched on in ncDFT calculations, we find that SOC consistently reduces the pumped spin current and therefore the effective SMC.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Symmetry-driven persistent spin texture for the two-dimensional nonsymmorphic CdTe and ZnTe crystal structures

In this paper, two nonsymmorphic two-dimensional structures of CdTe and ZnTe are modeled, and using state-of-the-art density functional theory with the group theory of solids, their symmetry-enforced electronic properties are studied. The in-plane ferroelectricity coupled with strong spin-orbit coupling induces a unidirectional out-of-plane Rashba spin-orbit field that can host a momentum-independent uniform spin configuration known as persistent spin texture (PST) at the Brillouin zone center. PST in these structures is found to be robust against external perturbations such as strain, structural distortion, and independent of layer thickness. These unprecedented intrinsic spin transport properties hold utmost importance in spintronics, as the experimental stringent condition of equal Rashba and Dresselhaus constants [Phys. Rev. Lett. 90, 146801 (2003)] is eliminated. The calculated persistent spin helix wavelength of <~5 nm paves the way for developing next-generation nanosized nonballistic spin field-effect transistors compared with micrometer-sized GaAs/AlGaAs quantum wells. Further, these materials exhibit finite spin Hall conductivity at the band edges and hence can be used in ferromagnet-free spin Hall transistors. Although CdTe and ZnTe systems have been widely studied for photocatalysis and solar cell applications over the past few decades, their potential application in spintronic devices has not been explored. Mono/few layers of CdTe and ZnTe synthesized from (110) facets of bulk zinc-blende crystals [Nat. Commun. 3, 1057 (2012)] satisfy all symmetry operations of the nonsymmorphic space group and hence can be considered ideal materials to verify our theoretical results experimentally.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Universal spin dynamics in infinite-temperature one-dimensional quantum magnets

Here, we address the nature of spin dynamics in various integrable and non-integrable, isotropic and anisotropic quantum spin-$S$ chains, beyond the paradigmatic $S=1/2$ Heisenberg model. In particular, we investigate the algebraic long-time decay $\propto t^{-1/z}$ of the spin-spin correlation function at infinite temperature, using state-of-the-art simulations based on tensor network methods. We identify three universal regimes for the spin transport, independent of the exact microscopic model: (i) superdiffusive with $z=3/2$, as in the Kardar-Parisi-Zhang universality class, when the model is integrable with extra symmetries such as spin isotropy that drive the Drude weight to zero, (ii) ballistic with $z=1$ when the model is integrable with a finite Drude weight, and (iii) diffusive with $z=2$ with easy-axis anisotropy or without integrability, at variance with previous observations.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2023

Intergranular Spin Dependent Tunneling Dominated Magnetoresistance in Helimagnetic Manganese Phosphide Thin Films

Helical magnets are emerging as a novel class of materials for spintronics and sensor applications; however, research on their charge- and spin-transport properties in a thin film form is less explored. Herein, we report the temperature and magnetic field-dependent charge transport properties of a highly crystalline MnP nanorod thin film over a wide temperature range (2 K < T < 350 K). The MnP nanorod films of ~100 nm thickness were grown on Si substrates at 500 °C using molecular beam epitaxy. The temperature-dependent resistivity ρ(T) data exhibit a metallic behavior (dρ/dT > 0) over the entire measured temperature range. However, large negative magnetoresistance (Δρ/ρ) of up to 12% is observed below ~50 K at which the system enters a stable helical (screw) magnetic state. In this temperature regime, the Δρ(H)/ρ(0) dependence also shows a magnetic field-manipulated CONE + FAN phase coexistence. The observed magnetoresistance is dominantly governed by the intergranular spin dependent tunneling mechanism. These findings pinpoint a correlation between the transport and magnetism in this helimagnetic system.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Anomalous spin polarization from turbulent color fields

Here we study the important, yet widely overlooked, role of gluons for spin transport with a connection to local parity violation in quark gluon plasmas. We employ the formalism of quantum kinetic theory to quarks in weakly coupled quantum chromodynamics to derive the source terms for quark spin polarization. These source terms involve parity-odd correlators of dynamically generated color fields in near-equilibrium quark gluon plasmas and give rise to locally fluctuating axial charge currents. Our results provide a possible explanation for the spin alignment of vector mesons measured in high-energy nuclear collisions.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2023

Giant interfacial spin Hall angle from Rashba-Edelstein effect revealed by the spin Hall Hanle process

The Rashba-Edelstein effect (REE), which generates interfacial spin polarization and subsequent spin current, is a compelling spin-charge conversion mechanism for spintronic applications, since it’s not limited by the elemental spin-orbit couplings. In this work we demonstrate REE at Pt/ferroelectric interfaces by showing a positive correlation between polarization and effective spin Hall angle in the recently elucidated spin Hall Hanle effects (SHHE), in which a Larmor precession of spin polarization in a diffusion process from the interface manifest as magnetoresistance and Hall effect. We show that REE leads to a large enhancement of the effective spin Hall angle of ferroelectric interface Pt/h-LuFeO 3 compared with that of Pt/Al 2 O 3 , without obvious differences in the spin relaxation time. Modeling using SHHEs involving REE as an additional source of interfacial polarization suggests that REE can lead to an interfacial spin Hall angle (0.4 ± 0.1) in Pt/h-LuFeO 3 that is one order of magnitude larger than the bulk value of Pt. Our results demonstrate that a ferroelectric interface can produce large spin-charge conversion and that SHHEs are a sensitive tool for characterizing interfacial spin-transport properties.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Temperature Dependent Spin Dynamics in La 0.67 Sr 0.33 MnO 3 /Pt Bilayers

Complex ferromagnetic oxides such as La 0.67 Sr 0.33 MnO 3 (LSMO) offer pathways for creating energy‐efficient spintronic devices with new functionalities. LSMO exhibits high‐temperature ferromagnetism, half metallicity, sharp resonance linewidth, low damping, and a large anisotropic magnetoresistance response. Combined with Pt, a proven material with high spin‐charge conversion efficiency, LSMO can be used to create robust nano‐oscillators for neuromorphic computing. Ferromagnetic resonance (FMR) and device‐level spin‐pumping FMR measurements are performed to investigate the magnetization dynamics and spin transport in NdGaO 3 (110)/LSMO(15 nm)/Pt(0 and 5 nm) thin films ranging from 300 K to 90 K and compare the device performance with Py(7 nm)/Pt(5 nm) sample. The spin current pumped into Pt is quantified to determine the temperature‐dependent influence of interfacial interactions. The generated spin current in the micro‐device is maximum at 170 K for the optimally grown LSMO/Pt films. Additionally, this bilayer system exhibits low magnetic Gilbert damping (0.002), small linewidth (12 Oe), and a large spin Hall angle (≈3.2%) at 170 K. Ex situ deposited LSMO/Pt bilayers demonstrate excellent dynamic response, exhibiting fourfold enhancement in signal output, eightfold reduction in damping, and a threefold reduction in linewidth as compared to the Pt/Py system. Such robust device‐level performance can pave way for energy‐efficient spintronic‐based devices.

complex perovskite thin films↗
DOE OSTI2022

Magnetic damping in ferromagnetic/heavy-metal systems: The role of interfaces and the relation to proximity-induced magnetism

Damping and spin transport in spintronic multilayered systems continues to be a topic of active research. The enhancement of damping in ferromagnet (FM)/spacer layer (SL)/heavy-metal (HM) thin-film systems was studied for Co 25 Fe 75 /SL/Pt with a nonmagnetic (NM) SL of either Au or Cu with variable thickness, in order to understand the correlation with proximity-induced magnetism (PIM) in the HM. Structural, PIM and magnetic damping measurements were undertaken on the same samples. Specifically, secondary ion mass spectroscopy, element specific x-ray magnetic reflectivity and x-ray magnetic circular dichroism at the Pt and Au L 3 edges, and ferromagnetic resonance methods were used. With increasing thickness of a Cu or Au SL directly between the FM and the Pt layer, the Pt PIM and the damping both fall rapidly, with a relationship between damping and PIM that depends on the SL material. The PIM observed in the Au layer showed a complex dependence on the layer thickness, suggesting some hybridization with the Pt. The role of the number and location of interfaces on the damping was demonstrated with the addition of a SL within the Pt layer, which showed that the specific details of the NM/HM interface also affects the damping. The insertion of a Cu SL within the Pt showed a measurable increase in the overall enhancement of the damping while the insertion of a Au SL into Pt had almost no effect on the damping. Finally, together these results demonstrate the role of both PIM and of additional interfaces in the enhancement of damping in FM/HM systems, which is not fully accounted for by existing theory

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Disorder-driven localization and electron interactions in Bi x ⁢ TeI thin films

Strong disorder has a crucial effect on the electronic structure in quantum materials by increasing localization, interactions, and modifying the density of states. Bi x TeI films grown at room temperature and 230 K exhibit dramatic magnetotransport effects due to disorder, localization, and electron correlation effects, including a metal-insulator transition at a composition that depends on growth temperature. The increased disorder caused by growth at 230 K causes the conductivity to decrease by several orders of magnitude for several compositions of Bi x TeI. The transition from metal to insulator with decreasing composition x is accompanied by a decrease in the dephasing length, which leads to the disappearance of the weak-antilocalization effect. Electron-electron interactions cause low temperature conductivity corrections on the metallic side and Efros-Shklovskii variable range hopping on the insulating side, effects which are absent in single crystalline Bi x TeI. Finally, the observation of a tunable metal-insulator transition and the associated strong localization and quantum effects in Bi x TeI shows the possibility of tuning spin transport in quantum materials via disorder.

36 MATERIALS SCIENCE↗