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Results for “Substitutional Doping”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Operando carbon corrosion measurements in fuel cells using boron-doped carbon supports

Carbonaceous materials are the most common catalyst supports in proton exchange membrane fuel cell (PEMFCs), yet their corrosion is one of the limiting factors in achieving high durability. Herein, we doped carbon supports with boron (B) to increase the corrosion-resistance of the support. Two types of B-doped carbons were synthesized and studied as platinum support materials. Further, they varied in their morphologies, surface areas, and the types of boron species. The durability of Pt/B-doped carbon catalysts was investigated using the US-DOE catalysts’ supports accelerated stress test (AST) and a mass-spectrometer connected to the fuel cell effluent stream to quantify the mass of corroded carbon support in operando. The addition of boron to the carbon increased the stability of Pt catalysts in long-term usage of PEMFC. After 4000 AST cycles, more than 50% of initial current density was preserved for the boron-containing systems, while less than 30% of it remained with Vulcan carbon (Pt/V). Also, the Pt/B-doped carbon samples demonstrated better electrochemical active surface area (ECSA) stability when compared to Pt/V. Carbon loss measurements showed that B-doped carbons have higher resistance to electrochemical corrosion than unmodified carbon. Specifically, the substitutional boron-doped carbon demonstrated an extremely high stability and low corrosion rate.

25 ENERGY STORAGE↗
DOE OSTI2025

Evolution of charge correlations in the hole-doped kagome superconductor CsV 3−𝑥⁢ Ti 𝑥 ⁢Sb 5

The interplay between superconductivity and charge correlations in the kagome metal CsV 3⁢ Sb 5 can be tuned by external perturbations such as doping or pressure. Here we present a study of charge correlations and superconductivity upon hole doping via Ti substitution on the V kagome sites in CsV 3−𝑥 ⁢Ti 𝑥 ⁢Sb 5 via synchrotron x-ray diffraction and scanning superconducting quantum interference device measurements. While the superconducting phase, as viewed via the vortex structure, remains conventional and unchanged across the phase diagram, the nature of charge correlations evolves as a function of hole doping from the first superconducting dome into the second superconducting dome. For Ti doping in the first superconducting dome, competing 2×2×2 and 2×2×4 supercells form within the charge density wave state and are suppressed rapidly with carrier substitution. In the second superconducting dome, no charge correlations are detected. Here, comparing these results to those observed for CsV 3 ⁢Sb 5−𝑥 ⁢Sn 𝑥 suggests important differences between hole doping via chemical substitution on the V and Sb sites, particularly in the disorder potential associated with each dopant.

Charge density waves↗
DOE OSTI2023

Magnetism and T-x phase diagrams of Na- and Ag-substituted EuCd 2 As 2

EuCd 2 As 2 is an antiferromagnetic semimetal, that can host non-trivial topological properties, depending upon its magnetic state and excitations. Here, we report the synthesis and characterization of Eu(Cd 1-x Ag x ) 2 As 2 and Eu 1-y Na y Cd 2 As 2 , and study the evolution and nature of magnetic order with doping. Temperature-substitution phase diagrams are constructed from the electrical resistance and magnetic susceptibility data. We observe a splitting of the magnetic transition into two different transitions, and the gradual increase in one of the transition temperatures with Agand Na-substitution. The other transition remains more or less independent of doping. Further, we show that a magnetic state with a net ferromagnetic moment is stabilized by both Ag and Na doping and this can be explained by considering the changes in band filling due to substitution as suggested by density functional theory (DFT) calculations. We thus show that chemical substitution and the subsequent changes in band filling could be a pathway to tune the magnetic ground state and to stabilize a ferromagnetic phase in EuCd 2 As 2 .

36 MATERIALS SCIENCE↗
DOE OSTI2024

Exploring the impact of multivalent substitution on high-temperature electrical conductivity in doped lanthanum chromite perovskites: An experimental and ab-initio study

Doped LaCrO 3 perovskites hold promise as robust materials for electrical interconnects and sensor applications in harsh environments. In this work, we investigated the high-temperature behavior of La 1–x Sr x CrO 3 , La 1–x Ca x CrO 3 and La 0.8 Sr 0.2 Cr 1-x Mn x O3 (0.1 ≤ x ≤ 0.4) through a combination of computational modeling and physical characterization up to 1500 °C. Crystalline structural properties were determined and compared with ab-initio calculations, which demonstrated excellent agreement with experimental findings. High-temperature electrical conductivity measurements were performed under different atmospheres. Calcium and strontium/manganese co-doped lanthanum chromites exhibited typical semiconductor exponential trends and conductivity showed proportional correlation with substitutions levels up to 30 %. The DFT modelling was completed up to 1500 °C, including low and high temperature chromite phases and oxygen vacancies insertion. Calculations were correlated with experimental electrical properties. This work expands the understanding of doped lanthanum chromites and paves the way for the development of materials suitable for demanding high-temperature applications.

20 FOSSIL-FUELED POWER PLANTS↗
DOE OSTI2023

Breaking New Ground: MB ene Route toward Selective Vinyl Double Bond Hydrogenation in Nitroarenes

Doping, or incremental substitution of one element for another, is an effective way to tailor a compound’s structure as well as its physical and chemical properties. Herein, we replaced up to 30% of Ni with Co in members of the family of layered LiNiB compounds, stabilizing the high-temperature polymorph of LiNiB while the room-temperature polymorph does not form. By studying this layered boride with in situ high-temperature powder diffraction, we obtained a distorted variant of LiNi 0.7 Co 0.3 B featuring a perfect interlayer placement of [Ni 0.7 Co 0.3 B] layers on top of each other–a structural motif not seen before in other borides. Because of the Co doping, LiNi 0.7 Co 0.3 B can undergo a nearly complete topochemical Li deintercalation under ambient conditions, resulting in a metastable boride with the formula Li 0.04 Ni 0.7 Co 0.3 B. Heating of Li 0.04 Ni 0.7 Co 0.3 B in anaerobic conditions led to yet another metastable boride, Li 0.01 Ni 0.7 Co 0.3 B, with a CoB-type crystal structure that cannot be obtained by simple annealing of Ni, Co, and B. No significant alterations of magnetic properties were detected upon Co-doping in the temperature-independent paramagnet LiNi 0.7 Co 0.3 B or its Li-deintercalated counterparts. Finally, Li 0.01 Ni 0.7 Co 0.3 B stands out as an exceptional catalyst for the selective hydrogenation of the vinyl C=C bond in 3-nitrostyrene, even in the presence of other competing functional groups. Finally, this research showcases an innovative approach to heterogeneous catalyst design by meticulously synthesizing metastable compounds.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Effect of the sample work function on alkali metal dosing induced electronic structure change

Alkali metal dosing (AMD) has been widely used as a way to control doping without chemical substitution. This technique, in combination with angle resolved photoemission spectroscopy (ARPES), often provides an opportunity to observe unexpected phenomena. However, the amount of transferred charge and the corresponding change in the electronic structure vary significantly depending on the material. Here, we report study on the correlation between the sample work function and alkali metal induced electronic structure change for three iron-based superconductors: FeSe, Ba(Fe 0.94 Co 0.06 ) 2 As 2 and NaFeAs which share a similar Fermi surface topology. Electronic structure change upon monolayer of alkali metal dosing and the sample work function were measured by ARPES. In this work, our results show that the degree of electronic structure change is proportional to the difference between the work function of the sample and Mulliken's absolute electronegativity of the dosed alkali metal. This finding provides a possible way to estimate the AMD induced electronic structure change.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Quadrupling the depairing current density in the iron-based superconductor SmFeAsO1–xHx

Abstract Iron-based 1111-type superconductors display high critical temperatures and relatively high critical current densities J c . The typical approach to increasing J c is to introduce defects to control dissipative vortex motion. However, when optimized, this approach is theoretically predicted to be limited to achieving a maximum J c of only ∼30% of the depairing current density J d , which depends on the coherence length and the penetration depth. Here we dramatically boost J c in SmFeAsO 1– x H x films using a thermodynamic approach aimed at increasing J d and incorporating vortex pinning centres. Specifically, we reduce the penetration depth, coherence length and critical field anisotropy by increasing the carrier density through high electron doping using H substitution. Remarkably, the quadrupled J d reaches 415 MA cm –2 , a value comparable to cuprates. Finally, by introducing defects using proton irradiation, we obtain high J c values in fields up to 25 T. We apply this method to other iron-based superconductors and achieve a similar enhancement of current densities.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Revealing uncommon transport in the previously unascertained very low cation clathrate-I Eu 2 Ga 11 Sn 35

In this study, high occupancy of cation sites is typical for clathrate-I compositions allowing limited tunability of the electrical properties beyond doping and elemental substitution. Herein, we report on the structure and electrical transport of single-crystal Eu 2 Ga 11 Sn 35 , the sole example of a very low (25%) cation concentration clathrate-I material with atypical transport directly attributable to the structure and stoichiometry.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Extremely Overdoped Superconducting Cuprates via High Pressure Oxygenation Methods

Within the cuprate constellation, one fixed star has been the superconducting dome in the quantum phase diagram of transition temperature vs. the excess charge on the Cu in the CuO2-planes, p, resulting from O-doping or cation substitution. However, a more extensive search of the literature shows that the loss of the superconductivity in favor of a normal Fermi liquid on the overdoped side should not be assumed. Many experimental results from cuprates prepared by high-pressure oxygenation show Tc converging to a fixed value or continuing to slowly increase past the upper limit of the dome of p = 0.26–0.27, up to the maximum amounts of excess oxygen corresponding to p values of 0.3 to > 0.6. These reports have been met with disinterest or disregard. Our review shows that dome-breaking trends for Tc are, in fact, the result of careful, accurate experimental work on a large number of compounds. This behavior most likely mandates a revision of the theoretical basis for high-temperature superconductivity. That excess O atoms located in specific, metastable sites in the crystal, attainable only with extreme O chemical activity under HPO conditions, cause such a radical extension of the superconductivity points to a much more substantial role for the lattice in terms of internal chemistry and bonding.

Sederholm, Linda (ORCID:0000000172090509)↗
DOE OSTI2023

Synthesis and optical properties of phosphorus doped ZnO: X-ray absorption, X-ray emission, and X-ray excited optical luminescence studies

Abstract Over the past decades, zinc oxide semiconductor and its derivatives have been extensively developed because of its optoelectronic properties. Since ZnO is an intrinsic n-type semiconductor, how to synthesize high-quality p-type ZnO semiconductors and investigate their optoelectronic properties and local chemical structures are important and necessary. In this article, two studies of synthesizing both undoped and phosphorus-doped ZnO nanostructures by hydrothermal method and chemical vapor deposition (CVD) technique are presented. Scanning electron microscopy (SEM) and laboratory X-ray diffraction (XRD) are used to track the surface morphology and the crystalline structure of both undoped and phosphorus doped ZnO nanostructures, respectively. X-ray absorption near edge structures (XANES), X-ray emission spectroscopy (XES) and X-ray excited optical luminescence (XEOL) are also used to determine the local chemical information of both undoped and phosphorus-doped ZnO nano/microstructures such as local symmetry and optical properties. It is found that the phosphorus is successfully doped into the surface of ZnO and substituted the Zn. The phosphorus-doped ZnO products have better crystallinity and less oxygen vacancies on the surface. These two are correlated as one leads to the other. The XEOL results suggest that the average bandgap for undoped and phosphorus doped ZnO is the same, 3.24 eV. The second derivative of the absorption-emission spectra yields the fundamental bandgap for undoped ZnO and phosphorus-doped ZnO is 3.25 eV. The implication of this observation is discussed.

Chemistry↗
DOE OSTI2022

Tuning charge density wave order and superconductivity in the kagome metals KV 3 Sb 5 – x Sn x and RbV 3 Sb 5 – x Sn x

The family of AV 3 Sb 5 (A = K, Rb, Cs) kagome metals exhibits charge density wave (CDW) order, proposed to be chiral, followed by a lower temperature superconducting state. Recent studies have proposed the importance of band structure saddle points proximal to the Fermi energy in governing these two transitions. Here we show the effects of hole doping achieved via chemical substitution of Sn for Sb on the CDW and superconducting states in both KV 3 Sb 5 and RbV 3 Sb 5 and generate a phase diagram. Furthermore, hole doping lifts the Γ pocket and van Hove singularities toward E F causing the superconducting T C in both systems to increase to about 4.5 K, while rapidly suppressing the CDW state.

36 MATERIALS SCIENCE↗
NASA NTRS1990

Preparation and characteristics of superconducting cuprate thin films: Nd(2-x)Ce(x)CuO4 and substituted Bi-system

Characteristics of the electron-doped-type Nd(2-x)Ce(x)CuO4 systems and substituted Bi2(Sr,Ln)3Cu2Oy system were systematically studied using the high quality thin-film samples. The Nd(2-x)Ce(x)CuO4 thin films with various Ce concentrations, x, were prepared by RF magnetron sputtering on SrTiO3 heated at around 500 C. After subsequent annealing at 1100 C in air, the films showed the c-axis orientation normal to the substrates. By means of the reducing treatment (annealing in a vacuum), superconductivity was induced for the films with 0.14 is less than or equal to x is less than or equal to 0.18. The superconductivity and transport properties of the films were strongly affected by the reducing treatment. The x = 0.15 film exhibited a sharp superconducting transition with zero resistivity at 22 K, in consistent with the diamagnetic properties. The resistivity of the films was fairly low with metallic characteristics, and the sight of the Hall coefficient was negative in the normal state. On the other hand, the normal-state optical measurements showed that the undoped Nd2CuO4 is a semiconductor with a charge transfer gap of 1.3 eV, and that, when Ce ions were doped, a plasma reflection due to the free-carriers came to be seen with the plasma frequency of 1.07 eV for 0.14 is less than or equal to x is less than or equal to 0.18. Moreover, x ray photoemission study revealed that the Cu valence of the film decreased for 2(+) for x = 0 to 1(+) for x = 0.15. These physical properties are in contrast with those of hole-doped-type cuprate superconductors. Bi2(Sr,Ln)3Cu2Oy thin films were also prepared on MgO substrates heated at 600 to 700 C by similar methods. It was found that the growth conditions for Bi-systems with two CuO2 planes were different for each composition and species of lanthanoid in the films. Moreover, preparation of Bi-system with three CuO2 planes was very difficult when lanthanoid atoms were doped in the system. Their electric transport properties and x ray photoemission spectroscopy were investigated. Carrier concentration and Cu valence were discussed with regard to the superconductivity.

Adachi, H.↗
DOE OSTI2024

Trap‐Engineering the Persistent Luminescence of Ca 3 Ga 4 O 9 :Tb 3+ via Al 3+ Substitution for Optical Data Storage

Abstract Optically stimulated luminescence (OSL) materials hold great potential for optical data storage (ODS) and anticounterfeiting applications. Nevertheless, the scarcity of suitable luminescent materials with deep‐level traps remains a significant obstacle. Herein, a host substation strategy have been employed to tune the persistent luminescence (PersL) and OSL properties of Ca 3 Ga 4 O 9 :Tb 3+ by Al 3+ substitution through trap engineering and demonstrated their potential. Specifically, the photoluminescence of the Ca 2.985 (Ga 1‐y% Al y% ) 4 O 9 :0.5%Tb 3+ of Tb 3+ is first investigated due to its different occupancies of Ca 2+ . The influence of host substitution on the crystal structure, trap depth, trap density, PersL, and OSL properties have further investigated. A series of strong PersL and OSL peaks from the Ca 2.985 (Ga 1‐y% Al y% ) 4 O 9 :0.5%Tb 3+ with bluish‐green emissions have been observed. The Ca 2.985 (Ga 1‐y% Al y% ) 4 O 9 :0.5%Tb 3+ have shown controllable photon release upon thermal and optical stimuli, enhancing their performance for ODS. Thermally stimulated luminescence suggests that vacancy and defect concentrations inside the Ca 3‐x% (Ga 1‐y% Al y% ) 4 O 9 :x%Tb 3+ can be manipulated by Tb 3+ doping and Al 3+ substitution, which ultimately leads to the formation of deep traps and a broad distribution of traps with increased deep trap concentration. The work demonstrates that trap engineering through Al 3 ⁺ substitution is an effective method for tuning PersL and OSL properties of Ca 2.985 (Ga 1‐y% Al y% ) 4 O 9 :0.5%Tb 3+ for ODS.

Abeywickrama, Thulitha M. [Department of Chemistry↗
DOE OSTI2026

Re-entrant unconventional superconductivity induced by rare-earth substitution in Nd 1-x Eu x NiO 2 thin films

High temperature superconductivity is typically associated with strong coupling and a large superconducting gap, yet these characteristics have not been demonstrated in the nickelates. Here, we provide experimental evidence that Eu substitution in the spacer layer of Nd 1-x Eu x NiO 2 (NENO) thin films enhances the superconducting gap, driving the system toward a strong-coupling regime. This is accompanied by a magnetic-exchange-driven magnetic-field-enhanced superconductivity. We investigate the upper critical magnetic field, H c2 , and the superconducting gap of superconducting NENO thin films with x = 0.2 to 0.35. Magnetoresistance measurements reveal magnetic-field-enhanced superconductivity in NENO films. We interpret this phenomenon as a result of an interaction between magnetic Eu ions and superconducting states in the Ni d x2-y2 orbital. The upper critical magnetic field strongly violates the weak-coupling Pauli limit. Infrared spectroscopy confirms a large gap-to-Tc ratio $2\Delta /{k}_{B}{T}_{{\rm{c}}}\simeq 5-6$, indicating a stronger coupling pairing mechanism in NENO relative to the Sr-doped NdNiO 2 . The substitution of Eu in the rare-earth layer causes pronounced modifications of the superconducting gap and magnetic interactions in Nd-based nickelates, opening new pathways to engineer high- T c superconductivity in infinite-layer nickelates.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Strain Engineering: A Pathway for Tunable Functionalities of Perovskite Metal Oxide Films

Perovskite offers a framework that boasts various functionalities and physical properties of interest such as ferroelectricity, magnetic orderings, multiferroicity, superconductivity, semiconductor, and optoelectronic properties owing to their rich compositional diversity. These properties are also uniquely tied to their crystal distortion which is directly affected by lattice strain. Therefore, many important properties of perovskite can be further tuned through strain engineering which can be accomplished by chemical doping or simply element substitution, interface engineering in epitaxial thin films, and special architectures such as nanocomposites. In this review, we focus on and highlight the structure–property relationships of perovskite metal oxide films and elucidate the principles to manipulate the functionalities through different modalities of strain engineering approaches.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Broad-range tuning of ferroelectric switching of La x Bi 1−x FeO 3 epitaxial films via digital doping using off-axis co-sputtering

To investigate the scope of ferroelectric behavior in La-substituted BiFeO 3 films, La x Bi 1−x FeO 3 epitaxial films were synthesized using off-axis co-sputtering on SrTiO 3 (001) and DyScO 3 (110) substrates with a SrRuO 3 bottom electrode layer. A digital-doping deposition method was used to enable precise control and continuous tuning of La concentration in high-quality LaxBi 1−x FeO 3 films across a wide range of x = 0.05–0.60, which was systematically investigated using piezoresponse force microscopy. Robust and reversible out-of-plane ferroelectric switching has been observed up to x = 0.35, while films with x ≥ 0.37 exhibit no measurable ferroelectric behavior, indicating a sharp ferroelectric-to-paraelectric phase transition between x = 0.35 and 0.37. This represents the highest reported La concentration in LaxBi 1−x FeO 3 films that retains ferroelectric ordering, highlighting opportunities to engineer ferroelectric and multiferroic properties in complex oxide heterostructures.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Influence of heterovalent doping on tetrahedral N interstitial formation in dilute GaAsN alloys

Dilute alloying of GaAs with N enables bandgap tuning for near-infrared to mid-infrared optoelectronic devices. However, non-substitutional N incorporation has been linked to lower absorption and emission efficiencies in dilute-nitride-alloy-based devices, especially in those containing heterovalent dopants. Here, in this work, we examine the influence of heterovalent dopants on N incorporation mechanisms in dilute GaAs 1−x N x alloys with N composition intentionally below the threshold composition for the formation of tetrahedral N interstitials (N tetra ) in undoped GaAs 1−x N x . For undoped GaAs 1−x N x , 20% of the N incorporates in non-substitutional sites, as (N-N) As and (N-As) split interstitials. Interestingly, Si dopants induce the formation of N tetra , while Be doping has a negligible effect on the interstitial type. Although elastic interactions due to opposite signs of the misfit volumes of N tetra and N As contribute to N tetra incorporation above a threshold N composition, Si dopants reduce the threshold composition, due to the Fermi level-dependent stability of N tetra .

36 MATERIALS SCIENCE↗