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At least 73 records · Page 4

Epitaxial solar cells fabrication

Silicon epitaxy has been studied for the fabrication of solar cell structures, with the intent of optimizing efficiency while maintaining suitability for space applications. SiH2CL2 yielded good quality layers and junctions with reproducible impurity profiles. Diode characteristics and lifetimes in the epitaxial layers were investigated as a function of epitaxial growth conditions and doping profile, as was the effect of substrates and epitaxial post-gettering on lifetime. The pyrolytic decomposition of SiH4 was also used in the epitaxial formation of highly doped junction layers on bulk Si wafers. The effects of junction layer thickness and bulk background doping level on cell performance, in particular, open-circuit voltage, were investigated. The most successful solar cells were fabricated with SiH2 CL2 to grow p/n layers on n(+) substrates. The best performance was obtained from a p(+)/p/n/n(+) structure grown with an exponential grade in the n-base layer.

Daiello, R. V.↗

Cyclic Oxidation and Hot Corrosion of NiCrY-Coated Disk Superalloy

Powder metallurgy disk superalloys have been designed for higher engine operating temperatures through improvement of their strength and creep resistance. Yet, increasing disk application temperatures to 704 C and higher could enhance oxidation and activate hot corrosion in harmful environments. Protective coatings could be necessary to mitigate such attack. Cylindrical coated specimens of disk superalloys LSHR and ME3 were subjected to thermal cycling to produce cyclic oxidation in air at a maximum temperature of 760 C. The effects of substrate roughness and coating thickness on coating integrity after cyclic oxidation were considered. Selected coated samples that had cyclic oxidation were then subjected to accelerated hot corrosion tests. The effects of this cyclic oxidation on resistance to subsequent hot corrosion attack were examined.

Hot corrosion↗

Theoretical and experimental studies relevant to interpretation of auroral emissions

This report describes the accomplishments of a program designed to develop the tools necessary to interpret auroral emissions measured from a space-based platform. The research was divided into two major areas. The first area was a laboratory study designed to improve our understanding of the space vehicle external environment and how it will affect the space-based measurement of auroral emissions. Facilities have been setup and measurements taken to simulate the gas phase environment around a space vehicle; the radiation environment encountered by an orbiting vehicle that passes through the Earth's radiation belts; and the thermal environment of a vehicle in Earth orbit. The second major area of study was a modeling program to develop the capability of using auroral images at various wavelengths to infer the total energy influx and characteristic energy of the incident auroral particles. An ab initio auroral calculation has been added to the extant ionospheric/thermospheric global modeling capabilities within our group. Once the addition of the code was complete, the combined model was used to compare the relative intensities and behavior of various emission sources (dayglow, aurora, etc.). Attached papers included are: 'Laboratory Facility for Simulation of Vehicle-Environment Interactions'; 'Workshop on the Induced Environment of Space Station Freedom'; 'Radiation Damage Effects in Far Ultraviolet Filters and Substrates'; 'Radiation Damage Effects in Far Ultraviolet Filters, Thin Films, and Substrates'; 'Use of FUV Auroral Emissions as Diagnostic Indicators'; and 'Determination of Ionospheric Conductivities from FUV Auroral Emissions'.

Keffer, Charles E.↗

Mode characteristics of nonplanar double-heterojunction and large-optical-cavity laser structures

Mode behavior of nonplanar double-heterojunction (DH) and large-optical-cavity (LOC) lasers is investigated using the effective index method to model the lateral field distribution. The thickness variations of various layers for the devices discussed are correlated with the growth characteristics of liquid-phase epitaxy over topographical features (channels, mesas) etched into the substrate. The effective dielectric profiles of constricted double-heterojunction (CDH)-LOC lasers show a strong influence on transverse mode operation: the fundamental transverse mode (i.e., in the plane perpendicular to the junction) may be laterally index-guided, while the first (high)-order mode is laterally index-antiguided. The analytical model developed uses a smoothly varying hyperbolic cosine distribution to characterize lateral index variations. The waveguide model is applied to several lasers to illustrate conditions necessary to convert leaky modes to trapped ones via the active-region gain distribution. Theoretical radiation patterns are calculated using model parameters, and matched to an experimental far-field pattern.

Butler, J. K.↗

Material growth and characterization directed toward improving III-V heterojunction solar cells

In addition to the existing materials growth laboratory, the photolithographic facility and the device testing facility were completed. The majority of equipment for data acquisition, solar cell testing, materials growth and device characterization were received and are being put into operation. In the research part of the program, GaAs and GaA1As layers were grown reproducibly on GaAs substrates. These grown layers were characterized as to surface morphology, thickness and thickness uniformity. The liquid phase epitaxial growth process was used to fabricate p-n junctions in Ga(1-x)A1(x)As. Sequential deposition of two alloy layers was accomplished and detailed analysis of the effect of substrate quality and dopant on the GaA1As layer quality is presented. Finally, solar cell structures were formed by growing a thin p-GaA1As layer upon an epitaxial n-GaA1As layer. The energy gap corresponding to the long wavelength cutoff of the spectral response characteristic was 1.51-1.63 eV. Theoretical calculations of the spectral response were matched to the measured response.

Stefanakos, E. K.↗

Ballistic-electron-emission microscopy of subsurface defects at the Au-GaAs(100) interface

The application of ballistic-electron-emission microscopy (BEEM) to a study of the influence of GaAs(100) substrate conditions on the formation of a multidefect structure at the Au-GaAs(100) Schottky barrier interface is described. Interfaces prepared on both melt-grown GaAs(100) wafer substrates and MBF-deposited GaAs(100) buffer layers are considered. As a comparison to the study of Au-GaAs(100) interfaces, BEEM imaging is performed on Au-Si(100) interfaces. It is noted that Au-GaAs(100) interface formation is relatively insensitive to the effects of substrate surface condition and substrate bulk defect density, and that the combination of BEEM imaging and BEEM spectroscopy indicates that the heterogeneous interface defects are the result of diffusion between the Schottky barrier electrodes.

Hecht, M. H.↗

Infrared Radiative Properties of Yttria-Stabilized Zirconia Thermal Barrier Coatings

The infrared (IR) transmittance and reflectance of translucent thermal barrier coatings (TBCs) have important implications for both the performance of these coatings as radiation barriers and emitters as well as affecting measurements of TBC thermal conductivity, especially as TBCs are being pushed to higher temperatures. In this paper, the infrared spectral directional-hemispherical transmittance and reflectance of plasma-sprayed 8wt% yttria-stabilized zirconia (8YSZ) TBCs are reported. These measurements are compared to those for single crystal YSZ specimens to show the effects of the plasma-sprayed coating microstructure. It is shown that the coatings exhibit negligible absorption at wavelengths up to about 5 micrometers, and that internal scattering rather than surface reflections dominates the hemispherical reflectance. The translucent nature of the 8YSZ TBCs results in the absorptance/emittance and reflectance of TBC-coated substrates depending on the TBC thickness, microstructure, as well as the radiative properties of the underlying substrate. The effects of these properties on TBC measurements and performance are discussed.

Eldridge, Jeff I.↗

Rise-time response of nickel-foil-on-Kapton-substrate, hot-film, shear-stress sensors

An existing nickel-foil-on-Kapton-substrate sensor design was modified by including two heated elements in an attempt to minimize or reduce substrate conduction effects. The rise-time responses of the original and modified sensors were then investigated in unsteady flows of 0.5-1-s duration, consistent with flows encountered in wind-energy applications. The results obtained indicate a measurable degradation in transient performance due to the activation of the dynamic guard heater. Transient heat conduction within the substrate remains the limiting factor in such applications.

Reda, Daniel C.↗

Theoretical Study of the Effect of an AlGaAs Double Heterostructure on Metal-Semiconductor-Metal Photodetector Performance

The impulse and square-wave input response of different GaAs metal-semiconductor-metal photodetector (MSM) designs are theoretically examined using a two dimensional drift- diffusion numerical calculation with a thermionic-field emission boundary condition model for the heterojunctions. The rise time and the fall time of the output signal current are calculated for a simple GaAs, epitaxially grown, MSM device as well as for various double-heterostructure barrier devices. The double heterostructure devices consist of an AlGaAs layer sandwiched between the top GaAs active, absorption layer and the bottom GaAs substrate. The effect of the depth of the AlGaAs layer on the speed and responsivity of the MSM devices is examined. It is found that there is an optimal depth, at fixed applied bias, of the AlGaAs layer within the structure that provides maximum responsivity at minimal compromise in speed.

Salem, Ali F.↗

Fully Printed High-Frequency Phased-Array Antenna on Flexible Substrate

To address the issues of flexible electronics needed for surface-to-surface, surface-to-orbit, and back-to-Earth communications necessary for manned exploration of the Moon, Mars, and beyond, a room-temperature printing process has been developed to create active, phased-array antennas (PAAs) on a flexible Kapton substrate. Field effect transistors (FETs) based on carbon nanotubes (CNTs), with many unique physical properties, were successfully proven feasible for phased-array antenna systems. The carrier mobility of an individual CNT is estimated to be at least 100,000 sq cm/V(dot)s. The CNT network in solution has carrier mobility as high as 46,770 sq cm/V(dot)s, and has a large current-density carrying capacity of approx. 1,000 mA/sq cm , which corresponds to a high carrying power of over 2,000 mW/ sq cm. Such high carrier mobility, and large current carrying capacity, allows the achievement of high-speed (>100 GHz), high-power, flexible electronic circuits that can be monolithically integrated on NASA s active phasedarray antennas for various applications, such as pressurized rovers, pressurized habitats, and spacesuits, as well as for locating beacon towers for lunar surface navigation, which will likely be performed at S-band and attached to a mobile astronaut. A fully printed 2-bit 2-element phasedarray antenna (PAA) working at 5.6 GHz, incorporating the CNT FETs as phase shifters, is demonstrated. The PAA is printed out at room temperature on 100-mm thick Kapton substrate. Four CNT FETs are printed together with microstrip time delay lines to function as a 2-bit phase shifter. The FET switch exhibits a switching speed of 0.2 ns, and works well for a 5.6-GHz RF signal. The operating frequency is measured to be 5.6 GHz, versus the state-of-the-art flexible FET operating frequency of 52 MHz. The source-drain current density is measured to be over 1,000 mA/sq cm, while the conventional organic FETs, and single carbon nanotube-based FETs, are typically in the mA to mA/sq cm range. The switching voltage used is 1.8 V, while the state-of-the-art flexible FET has a gate voltage around 50 V. The gate voltage can effectively control the source-drain current with an ON-OFF ratio of over 1,000 obtained at a low Vds bias of 1.8 V. The azimuth steering angles of PAA are measured at 0deg, -14.5deg, -30deg, and 48.6deg. The measured far-field patterns agree well with simulation results. The efficiency of the 2-bit 2-element PAA is measured to be 39 percent, including the loss of transmission line, FET switch, and coupling loss of RF probes. With further optimization, the efficiency is expected to be around 50-60 percent.

Chen, Yihong↗

Electric contact phenomena in ultra clean and specifically contaminated systems.

Contact resistance has been used to characterize the processes of physical contact in metallic systems with ultra clean surfaces. The contact resistance versus load curves of iron and two cobalt alloys were used to demonstrate the existence of surface work hardening and interfacial creep during contact as well as the fracture characteristics of an interfacial junction as the load is removed. The presence of an adsorbed film of hydrogen or hydrogen ions on iron completely changes the contact process. A comparison of the contact resistance versus load data for ultra pure iron, an iron-cobalt alloy and a cobalt molybdenum-chromium was used to illustrate the effect of substrate mechanical properties on static adhesion and the ability to convert these data for the estimation of the dynamic coefficient of friction under the particular experimental conditions.

Keller, D. V., Jr.↗

Electric contact phenomena in ultra clean and specifically contaminated systems.

Contact resistance has been used to characterize the processes of physical contact in metallic systems with ultraclean surfaces. The contact resistance versus load curves of iron and two cobalt alloys were used to demonstrate the existence of surface work hardening and interfacial creep during contact as well as the fracture characteristics of an interfacial junction as the load is removed. The presence of an adsorbed film of hydrogen or hydrogen ions on iron completely changes the contact process. A comparison of the contact resistance versus load data for ultrapure iron, and iron-cobalt alloy, and a cobalt molybdenum-chromium was used to illustrate the effect of substrate mechanical properties on static adhesion and the ability to convert these data for the estimation of the dynamic coefficient of friction under the particular experimental conditions.

Keller, D. V., Jr.↗

Scanning-electron-microscopy observations and mechanical characteristics of ion-beam-sputtered surgical implant alloys

An electron bombardment ion thruster was used as an ion source to sputter the surfaces of orthopedic prosthetic metals. Scanning electron microscopy photomicrographs were made of each ion beam textured surface. The effect of ion texturing an implant surface on its bond to bone cement was investigated. A Co-Cr-W alloy and surgical stainless steel were used as representative hard tissue implant materials to determine effects of ion texturing on bulk mechanical properties. Work was done to determine the effect of substrate temperature on the development of an ion textured surface microstructure. Results indicate that the ultimate strength of the bulk materials is unchanged by ion texturing and that the microstructure will develop more rapidly if the substrate is heated prior to ion texturing.

Weigand, A. J.↗

The effect of grooves in amorphous substrates on the orientation of metal deposits. I - Carbon substrates

The graphoepitaxial alignment of vapor-deposited discrete metal crystallites is investigated in the nucleation and growth stages and during annealing by in situ UHV/TEM techniques. Various stages of nucleation, growth and coalescence of vapor deposits of Au, Ag, Pb, Sn, and Bi on amorphous, topographically structured C substrates are analyzed by advanced dark-field techniques to detect preferred local orientations. It is found that the topography-induced orientation of metal crystallites depends strongly on their mobility and their respective tendency to develop pronounced crystallographic shapes. Lowering of the average surface free energies and increasing the crystallographic surface energy anisotropies cause generally improved graphoepitaxial alignments.

Anton, R.↗