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Results for “Thermoelectric Properties”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
NASA NTRS1989

Effect of Ga and P dopants on the thermoelectric properties of n-type SiGe

The purpose of this study was to hot-press improved n-type Si80Ge20/GaP samples directly (without any heat treatment) and to confirm that a Ga/P ratio less than one increases the solubility of P and, hence, improves the power factor and Z. One of the three samples (Ga/P = 0.43) had an improvement in Z of about 20 percent between 400 and 1000 C over that for standard SiGe. This demonstrates that improved samples can be pressed directly and that a Ga/P ratio less than one is necessary. The other two samples (Ga/P = 0.33 and 0.50) had Z's equal to or less than that of standard SiGe but had a lower hot-pressing temperature than the improved sample.

Draper, S. L.↗
NASA NTRS2013

Mechanochemical Synthesis and Thermoelectric Properties of Magnesium Silicide and Related Alloys

The present invention provides a method of making a substantially phase pure compound including a cation and an anion. The compound is made by mixing in a ball-milling device a first amount of the anion with a first amount of the cation that is less than the stoichiometric amount of the cation, so that substantially all of the first amount of the cation is consumed. The compound is further made by mixing in a ball-milling device a second amount of the cation that is less than the stoichiometric amount of the cation with the mixture remaining in the device. The mixing is continued until substantially all of the second amount of the cation and any unreacted portion of anion X are consumed to afford the substantially phase pure compound.

Fleurial, Jean-Pierre↗
NASA NTRS1998

Advanced thermoelectric materials with enhanced crystal lattice structure and methods of preparation

New skutterudite phases including Ru.sub.0.5 Pd.sub.0.5 Sb.sub.3, RuSb.sub.2 Te, and FeSb.sub.2 Te, have been prepared having desirable thermoelectric properties. In addition, a novel thermoelectric device has been prepared using skutterudite phase Fe.sub.0.5 Ni.sub.0.5 Sb.sub.3. The skutterudite-type crystal lattice structure of these semiconductor compounds and their enhanced thermoelectric properties results in semiconductor materials which may be used in the fabrication of thermoelectric elements to substantially improve the efficiency of the resulting thermoelectric device. Semiconductor materials having the desired skutterudite-type crystal lattice structure may be prepared in accordance with the present invention by using powder metallurgy techniques. Measurements of electrical and thermal transport properties of selected semiconductor materials prepared in accordance with the present invention, demonstrated high Hall mobilities and good Seebeck coefficients. These materials have low thermal conductivity and relatively low electrical resistivity, and are good candidates for low temperature thermoelectric applications.

Fleurial, Jean-Pierre↗
NASA NTRS1972

Dopant precipitation in silicon-germanium alloys.

The model commonly used to describe dopant precipitation in silicon-germanium alloys is discussed. The results of an experimental program are fit to the model in order to determine the long-term behavior of the thermoelectric properties of the n-type 80 at. % Si/20 at. % Ge alloy. Thermoelectric property projections to twelve years of operating time are given.

Raag, V.↗
NASA NTRS2011

Life Testing of Yb14MnSb11 for High Performance Thermoelectric Couples

The goal of this study is to verify the long term stability of Yb14MnSb11 for high performance thermoelectric (TE) couples. Three main requirements need to be satisfied to ensure the long term stability of thermoelectric couples: 1) stable thermoelectric properties, 2) stable bonding interfaces, and 3) adequate sublimation suppression. The efficiency of the couple is primarily based on the thermoelectric properties of the materials selected for the couple. Therefore, these TE properties should exhibit minimal degradation during the operating period of the thermoelectric couples. The stability of the bonding is quantified by low contact resistances of the couple interfaces. In order to ensure high efficiency, the contact resistances of the bonding interfaces should be negligible. Sublimation suppression is important because the majority of thermoelectric materials used for power generation have peak figures of merit at temperatures where sublimation rates are high. Controlling sublimation is also essential to preserve the efficiency of the couple. During the course of this research, three different life tests were performed with Yb14MnSb11 coupons. TE properties of Yb14MnSb11 exhibited no degradation after 6 months of aging at 1273K, and the electrical contact resistance between a thin metallization layer and the Yb14MnSb11 remained negligible after 1500hr aging at 1273K. A sublimation suppression layer for Yb14MnSb11 was developed and demonstrated for more than 18 months with coupon testing at 1273K. These life test data indicate that thermoelectric elements based on Yb14MnSb11 are a promising technology for use in future high performance thermoelectric power generating couples.

thermoelectric couples↗
NASA NTRS1991

Effect of microstructure and composition on the improvement of n-type SiGe/GaP material

Experimental and theoretical work has been conducted at the Jet Propulsion Laboratory to improve the thermoelectric properties of n-type SiGe materials. Particular emphasis has been placed upon the understanding of the differences in dopant solid solubilities when multidoping with both Ga and P instead of P alone, as in standard SiGe alloys. A set of various experimental techniques for obtaining heavily doped hot-pressed samples coupled with thermodynamic theoretical considerations was used to relate microstructure and composition to electrical and thermal transport properties. Application of these results to high-temperature heat treatments of several SiGe/GaP samples achieved substantial improvements of the thermoelectric figure of merit Z, with average values close to 1 x 10-3K-1 over the 600-1000 C temperature range. A set of systematic anneals on heavily doped SiGe/GaP materials is reported in an attempt to consistently reproduce the optimized thermoelectric properties.

Fleurial, Jean-Pierre↗
NASA NTRS1994

High-Performance Thermoelectric Semiconductors

Figures of merit almost double current state-of-art thermoelectric materials. IrSb3 is semiconductor found to exhibit exceptional thermoelectric properties. CoSb3 and RhSb3 have same skutterudite crystallographic structure as IrSb3, and exhibit exceptional transport properties expected to contribute to high thermoelectric performance. These three compounds form solid solutions. Combination of properties offers potential for development of new high-performance thermoelectric materials for more efficient thermoelectric power generators, coolers, and detectors.

Fleurial, Jean-Pierre↗
NASA NTRS1968

Plasma engineering

Magnetohydrodynamic flow, surface properties, silicon solar cells, and thermoelectric properties of graphite compounds

Source record↗