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At least 73 records · Page 4

Diffusion-assisted molecular beam epitaxy of CuCrO 2 thin films

Using molecular beam epitaxy (MBE) to grow multielemental oxides (MEOs) is generally challenging, partly due to difficulty in stoichiometry control. Occasionally, if one of the elements is volatile at the growth temperature, stoichiometry control can be greatly simplified using adsorption-controlled growth mode. Otherwise, stoichiometry control remains one of the main hurdles to achieving high-quality MEO film growths. Here, in this paper, we report another kind of self-limited growth mode, dubbed diffusion-assisted epitaxy, in which excess species diffuses into the substrate and leads to the desired stoichiometry, in a manner similar to the conventional adsorption-controlled epitaxy. Specifically, we demonstrate that using diffusion-assisted epitaxy, high-quality epitaxial CuCrO 2 films can be grown over a wide growth window without precise flux control using MBE.

36 MATERIALS SCIENCE↗

Single beam synthesis from thinned arrays

Radio astronomers have investigated spatial frequencies and their relationship to apertures with the objective to improve the resolution in radio observations. Welch (1965) has related Fourier transform theory developed for linear communications to aperture design problems, while Fakley (1959) has conducted a comparison between the performances of a time-averaged product array and an intraclass correlator. The present investigation is concerned with an approach which resembles very closely the intraclass correlator system considered by Fakley. A description is presented of a process whereby a thinned array of elements samples selected spatial frequencies from a uniform signal wave front incident on the array. The spatial frequencies are used to generate a set of synthetic spatial frequencies which behave as though they had been sampled by a fully filled array. Beam formation is obtained by summing the set of synthetic spatial frequencies.

Kaiser, J. A., Jr.↗

Dynamic testing of thin-walled composite box beams in a vacuum chamber

Vibration characteristics of thin-walled composite box beams are measured in a rotating environment in a 10-ft diameter vacuum chamber. Symmetric and antisymmetric layup beams are fabricated out of graphite/epoxy prepreg material using an autoclave molding technique. These are excited using piezoelectric ceramic elements and responses are measured using strain gages and accelerometers. First three natural modes are identified using spectrum analyzer over a range of rotational speeds up to 1000 rpm. Measured frequencies and mode shapes (displacement as well as strain) are correlated satisfactorily with calculated finite element results.

Chandra, Ramesh↗

Electron beam irradiation of thinned backside illuminated CCDs

The physical properties of backside illuminated surface channel CCD arrays and a pixel buried channel CCD array when bombarded with electrons were studied. The devices were mounted in a high vacuum system and irradiated with electrons generated by an electron gun. Basic measurements of EBS gain, dead voltage, transfer efficiency and dark current were performed to verify proper device operation. The surface channel devices were then irradiated with electrons of up to 8 keV energy for up to 98 hours while the buried channel device was irradiated with electrons.

Borsuk, G. M.↗

Some optical and electron microscope comparative studies of excimer laser-assisted and nonassisted molecular-beam epitaxically grown thin GaAs films on Si

The quality of GaAs thin films grown via MBE under pulsed excimer laser irradiation on Si substrates is examined in both laser-irradiated and nonirradiated areas using Raman scattering, Rayleigh scattering, and by photoluminescence (PL), as a function of temperature, and by TEM. The temperature dependence of the PL and Raman peak positions indicates the presence of compressive stress in the thin GaAs films in both laser-irradiated and nonirradiated areas. This indicates incomplete homogeneous strain relaxation by dislocations at the growth temperature. The residual compressive strain at the growth temperature is large enough such that even with the introduction of tensile strain arising from the difference in thermal expansion coefficients of GaAs and Si, a compressive strain is still present at room temperature for these thin GaAs/Si films.

Lao, Pudong↗

Ion beam sputter-deposited thin film coatings for protection of spacecraft polymers in low Earth orbit

Ion beam sputter-deposited thin films of Al2O3, SiO2, and a codeposited mixture of predominantly SiO2 with small amounts of a fluoropolymer were evaluated both in laboratory plasma ashing tests and in space on board shuttle flight STS-8 for effectiveness in preventing oxidation of polyimide Kapton. Measurements of mass loss and optical performance of coated and uncoated polyimide samples exposed to the low Earth orbital environment are presented. Optical techniques were used to measure loss rates of protective films exposed to atomic oxygen. Results of the analysis of the space flight exposed samples indicate that thin film metal oxide coatings are very effective in protecting the polyimide. Metal oxide coatings with a small amount of fluoropolymer codeposited have the additional benefit of great flexibility.

Banks, B. A.↗

Ion beam sputter-deposited thin film coatings for protection of spacecraft polymers in low earth orbit

Ion beam sputter-deposited thin films at Al2O3, SiO2, and a codeposited mixture of predominantly SiO2 with small amounts of fluoropolymer were evaluated both in laboratory plasma ashing tests and in space on board Shuttle flight STS-8 for effectiveness in preventing oxidation of polyimide Kapton. Measurements of mass loss and optical performance of coated and uncoated polyimide samples exposed to the low earth orbital environment are presented. Optical techniques were used to measure loss rates of protective films exposed to atomic oxygen. Results of the analysis of the space flight exposed samples indicate that thin film metal oxide coatings are very effective in protecting the polyimide. Metal oxide coatings with a small amount of fluoropolymer codeposited have the additional benefit of great flexibility.

Banks, B. A.↗

A Broad-Band Phase-Contrast Wave-Front Sensor

A broadband phase-contrast wave-front sensor has been proposed as a real-time wave-front sensor in an adaptive-optics system. The proposed sensor would offer an alternative to the Shack-Hartmann wave-front sensors now used in high-order adaptive-optics systems of some astronomical telescopes. Broadband sensing gives higher sensitivity than does narrow-band sensing, and it appears that for a given bandwidth, the sensitivity of the proposed phase-contrast sensor could exceed that of a Shack-Hartmann sensor. Relative to a Shack-Hartmann sensor, the proposed sensor may be optically and mechanically simpler. As described below, an important element of the principle of operation of a phase-contrast wave-front sensor is the imposition of a 90deg phase shift between diffracted and undiffracted parts of the same light beam. In the proposed sensor, this phase shift would be obtained by utilizing the intrinsic 90 phase shift between the transmitted and reflected beams in an ideal (thin, symmetric) beam splitter. This phase shift can be characterized as achromatic or broadband because it is 90deg at every wavelength over a broad wavelength range.

Bloemhof, Eric↗

Effects of deposition and annealing conditions on the crystallisation of NiTi thin films by e-beam evaporation

This Letter demonstrates the effects of deposition and annealing conditions on the crystallisation of nickel–titanium (NiTi) thin films deposited by the e-beam evaporation. NiTi thin films of 0.5 μm thick are fabricated on P-type (110) silicon substrates using the e-beam evaporation technique. We find that with the characterisations using the X-ray diffraction method, the results indicate that low e-beam deposition rate and argon employed annealing procedures can be beneficial to the formation of NiTi crystalline structure. Additionally, the as-deposited NiTi thin films without annealing procedures are amorphous, when deposited on the substrates at low temperatures. The differential scanning calorimetry studies show NiTi thin films formed by the e-beam evaporation are Ni-rich. Furthermore, SEM images illustrate that high-precision patterned NiTi thin film microstructures can be fabricated by combining with the e-beam evaporation and lift-off resist methods, without any wet or dry etching procedures. The proposed fabrication process for NiTi thin film microstructures shows great potential for application in shape memory alloy medical devices, as well as the micro-robotics.

36 MATERIALS SCIENCE↗

Single-beam plasma source deposition of carbon thin films

A single-beam plasma source was developed and used to deposit hydrogenated amorphous carbon (a-C:H) thin films at room temperature. The plasma source was excited by a combined radio frequency and direct current power, which resulted in tunable ion energy over a wide range. The plasma source could effectively dissociate the source hydrocarbon gas and simultaneously emit an ion beam to interact with the deposited film. Using this plasma source and a mixture of argon and C 2 H 2 gas, a-C:H films were deposited at a rate of ~26 nm/min. The resulting a-C:H film of 1.2 µm thick was still highly transparent with a transmittance of over 90% in the infrared range and an optical bandgap of 2.04 eV. Young’s modulus of the a-C:H film was ~80 GPa. The combination of the low-temperature high-rate deposition of transparent a-C:H films with moderately high Young’s modulus makes the single-beam plasma source attractive for many coatings applications, especially in which heat-sensitive and soft materials are involved. Here, the single-beam plasma source can be configured into a linear structure, which could be used for large-area coatings.

14 SOLAR ENERGY↗

Electron beam flash evaporation for YBaCuO and BiCaSrCuO thin films

An electron beam flash evaporation technique is described which reproduces the stoichiometry of superconducting YBa(2)Cu(3)O(x) (123), Bi(2)CaSr(2)Cu(2)O(y) (2122), and Bi(2)Ca(2)Sr(2)Cu(3)O(z) (2223) source powders. Films of each material deposited with this technique exhibit zero resistance temperatures of 78 K or above when furnace annealed; 75 K zero temperatures are obtained for 123 films in situ annealed with atomic oxygen at 775 C. Transport critical current densities are 10,000 A/sq cm in 25-micron stripes patterned from 123 films, and 60,000 A/sq cm in 1-mm stripes of 2122 and 2223 films using a 1-microV/mm measurement criteria. Typical normal state resistivities are 700 micro-ohm cm for 2122 and 2223 films and 5 micro-ohm cm for 123 films. The 2122 films are highly textured with the c axis normal to the substrate. All results are for films deposited on MgO.

Davis, Matthew F.↗

Growth of periodic nano-layers of nano-crystals of Au, Ag, Cu by ion beam

Multilayered thin films of SiO2/AU+ SiO2/, SiO2/Ag+ SiO2/, and SiO2/Cu+ SiO2/, were grown by deposition. We have previously shown that MeV ion Bombardment of multi-nano-layers of SiO2/AU+ SiO2/ produces Au nanocrystals in the AU+ SiO2 layers. An increased number of nano-layers followed by MeV ion bombardment produces a wide optical absorption band, of which its FWHM depends on the number of nano-layers of SiO2/AU+ SiO2/. We have successfully repeated this process for nano-layers of SiO2/Ag+ SiO2/, and SiO2/Cu+ SiO2/. In this work we used 5 MeV Si as the post deposition bombardment ion and monitored the location as well as the optical absorption's FWHM for each layered structure using Optical Absorption Photospectrometry. The concentration and location of the metal nano-crystals were measured by Rutherford Backscattering Spectrometry. We will report on the results obtained for nano-layered structures produced by post deposition bombardment of SiO2/AU+ SiO2/, SiO2/Ag+ SiO2/, and SiO2/Cu+ SiO2/ layered systems as well as the results obtained from a system containing a periodic combination of SiO2/AU+ SiO2/, SiO2/Ag+ SiO2/, and SiO2/Cu+ SiO2/.

Smith, Cydale C.↗