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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Beam steering at the nanosecond time scale with an atomically thin reflector

Techniques to mold the flow of light on subwavelength scales enable fundamentally new optical systems and device applications. The realization of programmable, active optical systems with fast, tunable components is among the outstanding challenges in the field. Here, we experimentally demonstrate a few-pixel beam steering device based on electrostatic gate control of excitons in an atomically thin semiconductor with strong light-matter interactions. By combining the high reflectivity of a MoSe 2 monolayer with a graphene split-gate geometry, we shape the wavefront phase profile to achieve continuously tunable beam deflection with a range of 10°, two-dimensional beam steering, and switching times down to 1.6 nanoseconds. Our approach opens the door for a new class of atomically thin optical systems, such as rapidly switchable beam arrays and quantum metasurfaces operating at their fundamental thickness limit.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2023

High‐Throughput Study of Amorphous Stability and Optical Properties of Superlattice‐Like Ge–Sb–Te Thin Films

A high‐throughput ion beam sputtering system is used to synthesize compositional gradient superlattice‐like (SLL) thin film libraries of Ge–Sb–Te alloys over the entire phase diagram. Here, the optical properties and structural evolution of the Ge–Sb–Te combinatorial SLL thin film are investigated. A systematic screening over the annealing temperature, annealing time, and modulation period has elucidated the critical factors that affect the stability of the metastable phase and optical properties. It is found that amorphous stability and optical constant are highly dependent on the modulation period and chemical composition of the thin film. This data‐driven approach offers new perspectives for accelerating the development of new materials with excellent optical and amorphous stability and for exploring their mechanisms, by greatly expanding the dataset of Ge–Sb–Te alloys with SLL structures through high‐throughput experiments.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Geant4 based positron beam source (GPos) v1.0

GPos is a software that was created to determine the properties of positron beams resulting from the interaction of the LBNL BELLA center PetaWatt laser-driven plasma-capillary accelerated electron beam and the atoms of a thin solid target. GPos is written in C++, easily compiled with cmake and the spack package manager, which allows for multi-thread and MPI parallel computing. Its functions expand on the Geant4 toolkit library and allow for propagation of the modelled particles through vacuum drift distances with a focusing element (thin lens approximation). Users can change beam-foil-drift-lens parameters - to adapt GPos to other particle sources and infrastructures - in a simple input file. The code particle data output format, openPMD, which is compatible, for example, with the input of the ECP WarpX project code used to explore the physics of particle acceleration in plasmas. Using GPos in conjunction to WarpX allowed us to test various configurations for designing a high-quality and high-energy positron source at BELLA -required for us to address positron acceleration challenges in the development of future linear colliders. GPos can also be advantageous when tackling the physics of muon sources for future muon colliders as well as for the investigation of positron sources in lower energy regimes for applications like annihilation spectroscopy and astrophysical gamma-ray-bursts.

Pinto de Almeida Amorim, Ligia↗
DOE OSTI2020

In situ x-ray and electron scattering studies of oxide molecular beam epitaxial growth

We perform the first in situ synchrotron X-ray ray diffraction (SXRD) / reflection high energy electron diffraction (RHEED) studies on the growth of complex oxide thin films by molecular beam epitaxy. The unique deposition chamber, located at the Advanced Photon Source, allows the preparation of complex oxide samples with monolayer precision and facilitates the formation of direct correlations between in situ X-ray studies and the more prevalent RHEED investigations. Importantly, because SXRD and RHEED probe different atomic-scale processes during thin film synthesis, their concomitant use enables the extraction of details concerning growth behavior than one cannot determine from either probe alone. We describe the results of such in situ studies on the epitaxial growth of perovskite LaNiO3on (La 0.18 Sr 0.82 )(Al 0.59 Ta 0.41 )O 3 (001). We find that during the earliest stages of growth, the RHEED and X-ray signals do not agree with each other, demonstrating that while regular RHEED oscillations may imply high quality growth, the film-substrate interface can undergo significant changes during deposition due to the occurrence of interdiffusion at the growth temperature.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Damage-free X-ray spectroscopy characterization of oxide thin films

Thin polymer or oxide films are ubiquitous components in many devices, including membranes for filtration or electrodes in electrochemical energy storage. High energy electron or x-ray probes for microscopy and spectroscopy are useful to characterize and understand these materials. However, irreversible damage by the probe radiation remains a challenge. Here, we show that graphene serves as an x-ray and electron transparent substrate that substantially reduces radiation damage of an oxide thin film. We demonstrate this using highly focused x-ray beams, which show that compared to oxide thin films supported on a substrate, graphene-supported regions show minimal changes in the x-ray spectra as a function of x-ray dose. Further, these results pave the way for the development of experimental setups that allow for long exposure time measurements with limited sample damage and substrate-directed radiation patterning.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Synthesis of epitaxial TaO$_2$ thin films on Al$_2$O$_3$ by suboxide molecular-beam epitaxy and thermal laser epitaxy

Tantalum dioxide (TaO2) is a metastable tantalum compound. Here, we report the epitaxial stabilization of TaO2 on Al2O3 (1-102) (r-plane sapphire) substrates using suboxide molecular-beam epitaxy (MBE) and thermal laser epitaxy (TLE), demonstrating single-oriented, monodomain growth of anisotropically strained thin films. Microstructural investigation is performed using synchrotron X-ray diffraction and scanning transmission electron microscopy. The tetravalent oxidation state of tantalum is confirmed using X-ray absorption and photoemission spectroscopy as well as electron energy-loss spectroscopy. Optical properties are investigated via spectroscopic ellipsometry and reveal a 0.3 eV Mott gap of the tantalum 5d electrons. Density-functional theory and group theoretical arguments are used to evaluate the limited stability of the rutile phase and reveal the potential to unlock a hidden metal-insulator transition concomitant with a structural phase transition to a distorted rutile phase, akin to NbO2. Our work expands the understanding of tantalum oxides and paves the way for their integration into next-generation electronic and photonic devices.

FOS: Physical sciences↗
DOE OSTI2023

Parametric estimation of Poisson's ratio for thin hinged-hinged plates

Cornu's method is an elegant calculation besieged by an impractical approach to obtain accurate estimates for Poisson's ratio. Conventionally, Cornu's method requires several components, and each component can adversely affect the accuracy of the measurement. Furthermore, Cornu's conventional method requires a long beam because beams with short length-to-width ratios cause the estimate of Poisson's ratio to diverge from the true value of Poisson's ratio. We believe that, with the right modifications, Cornu's method can become an attractive approach to obtaining precise estimates for Poisson's ratio from mode shapes. Here we use finite element simulations to show how to use Cornu's method to estimate Poisson's ratio from a mode shape. Our modified Cornu's method removes knife-edges and loading components for a hinged-hinged plate under steady-state excitation. Given the true value of Poisson's ratio, as a performance specification, we show that simple parametric expressions can fit estimates for Poisson's ratio for different length-to-width ratios of thin hinged-hinged plates. Additionally, we show that estimates for Poisson's ratio from higher modes align with the results from the first mode and explain our expectation for this outcome. Furthermore, our results challenge the idea that anticlastic, monoclastic, and synclastic deformation uniquely correspond to positive, zero, and negative estimates of Poisson's ratio, respectively. With the emergence of materials-by-design, we expect that this parametric technique will be able to assist in experimental qualification of thin beam and plate structures with respect to the desired value of Poisson's ratio.

42 ENGINEERING↗
DOE OSTI2026

Toward Tunable Magnetic Dirac Semimetals: Mn Doping of Cd 3 As 2

Magnetic impurities provide a route toward increasing functionality in electronic materials, often enabling new device concepts and architectures. In the case of topological semimetals, dilute magnetic doping presents a particularly attractive approach for inducing a Dirac to Weyl phase change via time reversal symmetry breaking. However, efforts to realize changes in the electronic structure have been limited by challenges in incorporating magnetic impurities into crystals with sufficiently high electron mobilities to detect them via transport or spectroscopic techniques. Here, we demonstrate incorporation of Mn into Cd 3 ⁢As 2 Dirac semimetal thin films grown by molecular beam epitaxy (MBE). Using As-rich growth conditions and [001] oriented thin films, Mn compositions of >10% are achieved. Films contain uniform distributions of Mn with no evidence of secondary phases and exhibit electron mobilities greater than 10 000–30 000 cm 2 /Vs up to 5% Mn. An evolution in the magnetization behavior along with the emergence of a second quantum oscillation frequency at low Mn concentrations provide preliminary evidence of Mn-induced changes in the electronic structure that are consistent with a Weyl phase. This work demonstrates the potential of magnetically doping topological semimetal thin films and a pathway for synthesizing them.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Investigation of CrMnV and CrMnTiV multi principal element alloys thin films for use as exit windows of electron beam accelerators

Here, this study explores CrMnV and CrMnTiV multi principal element alloy (MPEA) films as candidates for electron beam exit windows in industrial, high-power accelerators. Films were deposited via magnetron sputtering on various substrates and exposed to 66 kGy of 10 MeV e-beam irradiation. Structural and mechanical properties were analyzed using FESEM, XRD, and nanoindentation. CrMnTiV films exhibited superior grain uniformity and hardness, regardless of the substrate type. Compared to bulk materials, both MPEA films demonstrated higher hardness and excellent radiation resistance. These results highlight the potential of MPEA films as durable, radiation-tolerant materials for high-performance accelerator exit window applications.

Electron Beam Irradiation↗
DOE OSTI2023

Molecular Beam Epitaxy of Monocrystalline GaAs on Water-Soluble NaCl Thin Films

The goal of this project was to demonstrate the feasibility of employing an epitaxial NaCl thin film as a water-soluble release layer for III-V photovoltaic devices and GaAs substrate reuse. Over the course of this project efforts were focused on: 1) achieving crystalline NaCl thin films on GaAs (100) substrate, 2) exploring the growth parameters for subsequent GaAs on NaCl thin films in effort to improve crystallinity of the semiconductor layer, 3) deposition and removal of single crystalline solar cell devices from the parent substrate, and 4) improving morphology and reducing large scale defects in the removed layers to fabricate a working a solar cell device. There was no previous work on direct integration of GaAs/NaCl/GaAs heterostructures at the time of this study. We used molecular beam epitaxy (MBE) to deposit both the alkali halide salt and subsequent III-V material in the same chamber, with no vacuum break. Single crystalline GaAs films were achieved on NaCl layers through careful tuning of the growth parameters and exposure to the reflection high energy electron diffraction (RHEED) beam. Dissolution of the NaCl layer in water provided rapid release of the semiconductor layer from the substrate. Monocrystalline solar cells were grown on the III-V templates using MBE and dynamic hydride vapor phase epitaxy (HVPE). However, the extended time at elevated temperatures required for the cell growth resulted in large area defects from fusion of the semiconductor overlayer to the substrate, causing shorts in fabricated devices. By changing the way that the template layer was grown, the density of these defects could be reduced. Unfortunately, the defects were not reduced to a level allowing for fabrication of a working device.

14 SOLAR ENERGY↗
DOE OSTI2021

Molecular beam epitaxy of phase-pure antiperovskite Sr 3 SnO thin films

The antiperovskite oxide Sr 3 SnO has attracted substantial interest due to its topologically non-trivial band structure. Sr-deficient Sr3-xSnO can become superconducting, making it a candidate intrinsic topological superconductor. Here, we show that epitaxial, phase-pure Sr 3-x SnO films can be synthesized by molecular beam epitaxy (MBE) using solid Sr and SnO 2 sources. Here, we show that Sn-rich growth conditions result in a large amount of a Sn-rich impurity phase, which is challenging to detect in x-ray diffraction. Carrier densities and the amount of the impurity phase change systematically with the growth conditions, indicating that MBE provides excellent control over the films' stoichiometry. We discuss the electrical properties, including quantum interference phenomena, which support the topological nature of the films.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Creation of color centers in diamond by recoil implantation through dielectric films

The need of near-surface color centers in diamond for quantum technologies motivates the controlled doping of specific extrinsic impurities into the crystal lattice. Further, recent experiments have shown that this can be achieved by momentum transfer from a surface precursor via ion implantation, an approach known as “recoil implantation.” Here, we extend this technique to incorporate dielectric precursors for creating nitrogen-vacancy (NV) and silicon-vacancy (SiV) centers in diamond. Specifically, we demonstrate that gallium focused-ion-beam exposure to a thin layer of silicon nitride or silicon dioxide on the diamond surface results in the introduction of both extrinsic impurities and carbon vacancies. These defects subsequently give rise to near-surface NV and SiV centers with desirable properties after annealing.

42 ENGINEERING↗
DOE OSTI2021

Toward the predictive discovery of ambipolarly dopable ultra-wide-band-gap semiconductors: The case of rutile GeO 2

Ultrawide-band-gap (UWBG) semiconductors are promising for fast, compact, and energy-efficient power-electronics devices. Their wider band gaps result in higher breakdown electric fields that enable high-power switching with a lower energy loss. Yet, the leading UWBG semiconductors suffer from intrinsic materials' limitations with regard to their doping asymmetry that impedes their adoption in CMOS technology. Improvements in the ambipolar doping of UWBG materials will enable a wider range of applications in power electronics as well as deep-UV optoelectronics. These advances can be accomplished through theoretical insights on the limitations of current UWBG materials coupled with the computational prediction and experimental demonstration of alternative UWBG semiconductor materials with improved doping and transport properties. As an example, we discuss the case of rutile GeO2 (r-GeO 2 ), a water-insoluble GeO 2 polytype, which is theoretically predicted to combine an ultra-wide gap with ambipolar dopability, high carrier mobilities, and a higher thermal conductivity than β-Ga 2 O 3 . The subsequent realization of single-crystalline r-GeO 2 thin films by molecular beam epitaxy provides the opportunity to realize r-GeO 2 for electronic applications. Future efforts toward the predictive discovery and design of new UWBG semiconductors include advances in first-principles theory and high-performance computing software, as well as the demonstration of controlled doping in high-quality thin films with lower dislocation densities and optimized film properties.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Ionizing-radiation beam monitoring system

A transmissive ionizing-radiation beam monitoring system includes an enclosure structure with at least one ultra-thin window to an incident ionizing-radiation beam, where the ultra-thin window is highly transmissive to ionizing-radiation. Embodiments include at least one thin or ultra-thin scintillator within the enclosure structure that is substantially directly in an incident ionizing-radiation beam path and transmissive to the incident radiation beam, and at least one ultraviolet (UV) illumination source within the enclosure structure facing the scintillator. Embodiments include at least one machine vision camera within the enclosure structure located out of an incident ionizing-radiation beam path and including a camera body and lens having a projection of its optical axis oriented at an angle of incidence of 45±35 degrees to a surface of the scintillator.

Friedman, Peter S.↗
DOE OSTI2022

First-principles simulation of light-ion microscopy of graphene

The extreme sensitivity of 2D materials to defects and nanostructure requires precise imaging techniques to verify presence of desirable and absence of undesirable features in the atomic geometry. Helium-ion beams have emerged as a promising materials imaging tool, achieving up to 20 times higher resolution and 10 times larger depth-of-field than conventional or environmental scanning electron microscopes. Here, we offer first-principles theoretical insights to advance ion-beam imaging of atomically thin materials by performing real-time time-dependent density functional theory simulations of single impacts of 10–200 keV light ions in free-standing graphene. Here we predict that detecting electrons emitted from the back of the material (the side from which the ion exits) would result in up to three times higher signal and up to five times higher contrast images, making 2D materials especially compelling targets for ion-beam microscopy. This predicted superiority of exit-side emission likely arises from anisotropic kinetic emission. The charge induced in the graphene equilibrates on a sub-fs time scale, leading to only slight disturbances in the carbon lattice that are unlikely to damage the atomic structure for any of the beam parameters investigated here.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Automated Growth of Photocathodes [Slides]

Photocathode (alkali antimonides & tellurides) thin film growth state of the art remains largely an art of “cooking” instead of a controlled technological process. Our technology is a method of growing thin films by molecular beam deposition, that applies specifically to photoemissive films. We discovered that some of the photoemissive properties of Cs3Sb (easily measurable) strongly depend on the film’s stoichiometry (very difficult to measure, especially in real time). Such correlation allows to implement a feedback loop that adjusts the ratio of Cs and Sb fluxes in real time and thus maintains the same stoichiometric composition of the film during the whole growth cycle that may last for hours/days. Proposed scheme constitutes true, robust and versatile process control for the growth of alkali antimonide thin films.

36 MATERIALS SCIENCE↗
DOE OSTI2023

A New Plasma Radar Concept for Simultaneous Magnetic and Density Measurements

An innovative, compact 288GHz interferometer has been fabricated, tested, installed and successfully demonstrated on the LAPD-U magnetized plasma at UCLA. The system takes advantage of frequency modulated (FM) radar techniques to deliver a compact heterodyne system. In addition, the reflected power from the source is taken advantage of to eliminate the need for additional quasi-optical components. Electron density in LAPD-U plasma has recently been increased substantially thereby requiring a higher frequency/shorter wavelength interferometer to avoid deleterious refractive effects. This system satisfies those needs. The system uses a 96GHz varactor tuned Gunn oscillator which passes to a passive tripler. This tripler has ~3% conversion efficiency. The 288GHz radiation is then coupled to free space using a so-called dual-mode or Pickett horn. The output 288GHz beam is then coupled to an aspheric lens manufactured from low-loss, high-density polyethylene. This lens is employed to collimate the emerging beam. Small axial adjustment of the lens position can also be used to create a slowly focusing beam so as to optimize the measured signal. In addition, up-down or side-to-side adjustment of the lens can be utilized to steer the beam vertically or horizontally – again to optimize alignment. The propagating beam passes through a beam splitter and then through a water-free, bubble-free fused quartz window into the LAPD-U vacuum vessel. The beam-splitter is a thin sheet of G10 which reflects a small fraction of the incident power (~5 %) towards a zero-bias detector optimized for the frequency range from 220 to 300GHz. Note that waveguides at this frequency have dimensions of ~0.9mm x 0.45mm and so have very large conductive losses. This drives the use of quasi-optical propagation. The detector requires no DC bias and is very responsive (> 1V/mW into 1MΩ). Radiation is coupled to the detector via a similar lens-horn arrangement used for the launch. This reflected beam acts as the local oscillator or reference millimeter-wave beam for the detector. The remainder of the launched source beam then enters the LAPD-U vacuum vessel and passes through the plasma at the mid-plane until reaching the opposing port which is closed off with an aluminum flange. This flange is used as a mirror to retroreflect the incident 288GHz beam back along its path. The retroreflected beam exits the input port but does NOT couple directly into the zero-bias detector. Instead, the majority of the return power continues towards the 288GHz source. As mentioned above the transmitted beam enters the source a second time. This would appear undesirable. However, at these frequencies multipliers are highly non-linear elements which results in a significant portion of the return beam (~20%) re-emerging from the multiplier and horn and then coupling via the G10 beam-splitter to the zero-bias detector. This approach eliminated the need for a second quasi-optical beam-splitter. The system is extremely compact measuring approximately 28 inches x 20 inches. The above did not explain how heterodyne operation was achieved. As mentioned above the Gunn oscillator is able to be varactor tuned. This allows a low voltage to be applied to control the operating frequency of the Gunn oscillator. During heterodyne operation a sawtooth shaped voltage is applied to the varactor at 750kHz using an 80MHz Arbitrary Waveform Generator (AWG). This voltage changes the Gunn frequency linearly during the up-sweep which is then reset abruptly at the sawtooth crash to be immediately followed by another linear sweep. Passage through the 288GHz multiplier triples the frequency change experienced by the electromagnetic wave. These frequency changes are small – tens of megahertz. This FM radar approach results in the launched electromagnetic wave frequencies at the detector for the reference and plasma wave to be different. The approximately 10 ns delay propagation delay for the plasma beam results in the local oscillator and plasma beams NOT having an identical frequency – there is in fact a fixed difference frequency. The frequency tuning level of the Gunn oscillator is then adjusted so that there is ONE cycle of this difference frequency during each linear ramp. During the sawtooth crash or downward re-sweep this one cycle replays in reverse but on a very fast timescale. The process then repeats. Low-pass filtering eliminates the fast re-sweep to leave a pure sine wave heterodyne signal. When the plasma is present it introduces a phase delay in the sine wave (caused by the extremely small Doppler shift resulting from the optical path length change). Of course, to measure this phase change we need a reference. This is simply obtained from an arbitrary waveform generator which provides a synchronized output pulse train which again is low pass filtered to obtain a 750kHz sinusoidal voltage reference for the interferometer. The interferometer was installed on LAPD-U where it has worked reliably and has established that electron densities exceeding 1x10 13 cm -3 are routinely achieved. In addition, the system sensitivity was able to easily observe density fluctuation at frequencies up to 50kHz. FM Radar techniques have enabled a full demonstration of a compact, sensitive, high frequency (288GHz/1mm) heterodyne interferometer.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2021

Understanding and quantifying electron beam effects during in situ TEM nanomechanical tensile testing on metal thin films

Transmission electron microscopy (TEM) imaging relies on high energy electrons for atomic scale resolution, however, the electrons themselves interact with and may alter the material being imaged. Using an in situ TEM MEMS-based nanomechanical testing technique, the effect of the electron beam (e-beam) on the deformation behavior of nanocrystalline Al and ultrafine-grained Au is investigated and quantified. We show that the e-beam enhances plastic deformation, leading to an increase in plastic strain rate and a decrease in true activation volume V* in Al (28 to 21b 3 , with b being the Burgers vector length). The e-beam has a much weaker effect on Au. The e-beam effect is not caused by knock-on damage, but rather an effective temperature increase due to additional atomic fluctuations provided by the e-beam. The effective temperature increase is larger for Al than Au. This e-beam effect does not change the deformation mechanisms, but instead accelerates the stress-driven, thermally activated plastic deformation. These experiments provide insight into the effects of the e-beam on plastic deformation in different metals and underscore the importance of understanding and quantifying these effects for proper interpretation of measured mechanical properties during in situ TEM experiments.

36 MATERIALS SCIENCE↗