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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Iron dopant energy levels in β-Ga 2 O 3

The energetic positions of the two Fe dopant levels in the bandgap of β-Ga 2 O 3 are determined to be at 3.05(±0.05) and 3.85(±0.05) eV below the conduction band minimum from transmission measurements employing a sub-picosecond tunable ultraviolet laser radiation source. A further measurement of the quantum efficiency of photoelectron emission from the Fe:Ga 2 O 3 (010) photocathode is consistent with the obtained absorption data and a dominant optical phonon assisted Franck–Condon emission mechanism, while also providing an estimate of 100 ps for the conduction band electron lifetime.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2023

Neutral-atom entanglement using adiabatic Rydberg dressing

Here we revisit the implementation of a two-qubit entangling gate, the Mølmer-Sørensen gate, using the adiabatic Rydberg dressing paradigm for neutral atoms as studied in [A. Mitra et al., Phys. Rev. A 101, 030301(R) (2020)]. We study the implementation of rapid adiabatic passage using a two-photon transition, which does not require the use of an ultraviolet laser, and can be implemented using only amplitude modulation of one field with all laser frequencies fixed. We find that entangling gate fidelities, comparable to the one-photon excitation, are achievable with the two-photon excitation. Moreover, we address how the adiabatic dressing protocol can be used to implement entangling gates outside the regime of a perfect Rydberg blockade. We show that, by using adiabatic dressing, we can achieve scaling of the gate fidelity set by the fundamental limits to entanglement generated by the Rydberg interactions while simultaneously retaining a limited population in the doubly excited Rydberg state. This allows for fast high-fidelity gates for atoms separated beyond the blockade radius.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2023

Spectral emission properties of a nitrogen-doped diamond (001) photocathode: Hot electron transport and transverse momentum filtering

The electron emission properties of a single-crystal nitrogen-doped diamond(001) photocathode inserted in a 10 kV DC photoelectron gun are determined using a tunable (235–410 nm) ultraviolet laser radiation source for photoemission from both the back nitrogen-doped substrate face and the front homoepitaxially grown and undoped diamond crystal face. Here, the measured spectral trends of the mean transverse energy and quantum efficiency of the emitted electrons are both anomalous and nonmonotonic, but are shown to be consistent with (i) the known physics of electron photoexcitation from the nitrogen substitution states into the conduction bands of diamond, (ii) the energy position and dispersion characteristics of the conduction bands of diamond in the (001) emission direction, (iii) the effective electron affinity of the crystal faces, (iv) the strong electron-(optical)phonon coupling in diamond, and (v) the associated hot electron transport dynamics under energy equipartition with the optical phonons. Notably, the observed hot electron emission is shown to be restricted parallel to the photocathode surface by the low transverse effective masses of the emitting band states—a transverse momentum filtering effect.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Photothermal alternative to device fabrication using atomic precision advanced manufacturing techniques

The attachment of dopant precursor molecules to depassivated areas of hydrogen-terminated silicon templated with a scanning tunneling microscope (STM) has been used to create electronic devices with subnanometer precision, typically for quantum physics experiments. This process, which we call atomic precision advanced manufacturing (APAM), dopes silicon beyond the solid-solubility limit and produces electrical and optical characteristics that may also be useful for microelectronic and plasmonic applications. However, scanned probe lithography lacks the throughput required to develop more sophisticated applications. In this work, we demonstrate and characterize an APAM device workflow where scanned probe lithography of the atomic layer resist has been replaced by photolithography. An ultraviolet laser is shown to locally and controllably heat silicon above the temperature required for hydrogen depassivation on a nanosecond timescale, a process resistant to under- and overexposure. STM images indicate a narrow range of energy density where the surface is both depassivated and undamaged. Modeling that accounts for photothermal heating and the subsequent hydrogen desorption kinetics suggests that the silicon surface temperatures reached in our patterning process exceed those required for hydrogen removal in temperature-programmed desorption experiments. A phosphorus-doped van der Pauw structure made by sequentially photodepassivating a predefined area and then exposing it to phosphine is found to have a similar mobility and higher carrier density compared with devices patterned by STM. Lastly, it is also demonstrated that photodepassivation and precursor exposure steps may be performed concomitantly, a potential route to enabling APAM outside of ultrahigh vacuum.

nanoscale devices↗
DOE OSTI2020

Photothermal alternative to device fabrication using atomic precision advanced manufacturing techniques

The attachment of dopant precursor molecules to depassivated areas of hydrogen-terminated silicon templated with a scanning tunneling microscope (STM) has been used to create electronic devices with sub-nanometer precision, typically for quantum physics demonstrations, and to dope silicon past the solid-solubility limit, with potential applications in microelectronics and plasmonics. However, this process, which we call atomic precision advanced manufacturing (APAM), currently lacks the throughput required to develop sophisticated applications because there is no proven scalable hydrogen lithography pathway. Here, we demonstrate and characterize an APAM device workflow where STM lithography has been replaced with photolithography. An ultraviolet laser is shown to locally heat silicon controllably above the temperature required for hydrogen depassivation. STM images indicate a narrow range of laser energy density where hydrogen has been depassivated, and the surface remains well-ordered. A model for photothermal heating of silicon predicts a local temperature which is consistent with atomic-scale STM images of the photo-patterned regions. Finally, a simple device made by exposing photo-depassivated silicon to phosphine is found to have a carrier density and mobility similar to that produced by similar devices patterned by STM.

42 ENGINEERING↗
DOE OSTI2025

High-energy transient gas pinholes via saturated absorption

This Letter presents a spatial filter based on saturated absorption in gas as an alternative to the solid pinhole in a lens–pinhole–lens filtering system. We develop an analytic model that describes this process and demonstrate spatial filtering with simulations and experiments. We show that an ultraviolet laser pulse focused through ozone will have its spatial profile cleaned if its peak fluence rises above the ozone saturation fluence. Specifically, we demonstrate that a 5 ns 266 nm beam with 4.2 mJ of the initial energy can be effectively cleaned by focusing through a 1.4% ozone–oxygen mixture, with about 76% of the main beam energy transmitted and 89% of the sidelobe energy absorbed. In conclusion, this process can be adapted to other gases and laser wavelengths, providing alignment-insensitive and damage-resistant pinholes for high-repetition-rate high-energy lasers.

Ou, K. [Stanford Univ., CA (United States)] (ORCID↗
NASA NTRS1982

Atomic fluorescence study of high temperature aerodynamic levitation

Ultraviolet laser induced atomic fluorescence has been used to characterize supersonic jet aerodynamic levitation experiments. The levitated specimen was a 0.4 cm sapphire sphere that was separately heated at temperatures up to 2327 K by an infrared laser. The supersonic jet expansion and thermal gradients in the specimen wake were studied by measuring spatial variations in the concentration of atomic Hg added to the levitating argon gas stream. Further applications of atomic fluorescence in containerless experiments, such as ideal gas fluorescence thermometry and containerless process control are discussed.

Nordine, P. C.↗
NASA NTRS1992

Measuring Hydrogen Plumes With Raman Lidar

Prototype Raman lidar system measures concentration of hydrogen gas in atmosphere as function of position, with range resolution of 3 ft over 3,000 ft. Sensitive to concentrations smaller than 0.5 percent, 10 times below minimum flammable concentration. Pulsed ultraviolet laser beam excites Raman emissions from molecules to be detected. Backscattered light collected by telescope, filtered at appropriate wavelengths, and sent to photodetectors. Developed for use as safety monitor, and to study dispersion of hydrogen gas leaking into atmosphere.

Caputo, Bernard↗
NASA NTRS1995

Laboratory studies of 3.3 micron emission from naphthalene induced by 193 and 248 nanometer excitation

Laboratory studies of infrared emission from gas-phase naphthalene in the 3.3 micrometer region following ultraviolet laser excitation are used to interpret the unidentified infrared bands observed in many astronomical objects. A time-resolved Fourier transform infrared emission technique acquires the time and spectrally resolved data. Two excitation wavelengths are employed: 193 nm and 248 nm. The infrared emission features are strongly dependent on the initial excitation energy. Wavelength-resolved spectra recorded 6.8 microseconds after the laser pulse show a 45/cm redshift from the gas-phase absorption spectra for 193 nm excitation and 25/cm for 248 nm excitation. We hypothesize that a series of sequence bands originating from the highly vibrationally excited ensemble of molecules is responsible for the observed shift. As collisional and radiative deactivation removes energy from the highly vibrationally excited molecules, the maximum in the emission profile gradually approaches the customary absorption maximum. This indicates that the amount of redshift is strongly dependent on the amount of internal vibrational energy in the molecule at the time of the vibrational transition.

Williams, Richard M.↗
NASA NTRS2001

Impact and Collisional Processes in the Solar System

A series of impact experiments on anhydrite CaSO4, in which vaporized sample accelerates an element in a velocity interferometer, generate velocity data that we have recently reanalyzed using an explicit entropy generating finite difference code. The shock pressure required from the onset, and complete vaporization of 30% porous and 70% crystal density anhydrite is 52 +/- 3 and 122 +/- 13 GPa. Using observed acid leaching in non-marine K/T ejecta in North America, and the sharp global increase in Sr-87/Sr-86 ratios recorded at 65 Ma in marine rocks, we demonstrated that global acidification is primarily due to the SO2 released by anhydrite volatilization, and not HNO3 formed from bolide-induced air pyrolysis. Shock temperatures for crystal CaCO3 are measured from 3000 to 7000 K in the 90 to 160 GPa pressure range. These temperatures are much lower than calculated theoretically indicating that possibly bond breakdown at the shock front is occurring. This is the first mineral in which this effect has ever been seen. New data defining the ion species which are produced upon impact of volatilization of metals and minerals using a pulse ultraviolet laser to simulate intense shock heating from a projectile impact indicate that in shock experiments we can for the first time study the speciation of neutrals using a moderate resolution time-of-flight mass spectrometer. Measurements of the gas species from a series of proposed impact experiments appear to be quite feasible. We will attempt these experiments in the next year. Measurements of the impact induced shock wave decay in SiO2 and GeO2 glass are underway to measure these pure oxide properties. Predictive calculations indicate that the pressure will decay as r(exp -2.7) in the phase transition regime, versus a much lower rate of r(exp -1.18), if a phase transition does not occur.

Ahrens, Thomas J.↗
DOE OSTI2020

Origin and effect of film sub-stoichiometry on ultraviolet, ns-laser damage resistance of hafnia single layers

Understanding the origin of laser damage-prone precursors in high index materials such as hafnia holds the key to the development of laser damage-resistant multilayer dielectric coated optics for high power and energy laser systems. In this study, we investigate the source of sub-stoichiometry, a potent laser damage precursor, in hafnia films produced by an ion beam sputtering (IBS) deposition method and the effect of such defects on the film performance upon ns ultraviolet (UV) laser (8 ns, 355 nm) exposure. Chemical analysis of data obtained via Rutherford backscattering spectroscopy (RBS) suggests that hafnia films deposited at two different planetary locations from the same deposition run exhibit anisotropic and location-dependent stoichiometries. While the oxygen-to-hafnium ratio is at the stoichiometric value of 2 for the hafnia film at the edge location, the ratio is significantly deviated and is 1.7 for that deposited at the planetary center. The sub-stoichiometric hafnia films display a much lower 1-on-1 damage onset at 1.6 ± 0.2 J/cm 2 compared to 2.3 ± 0.2 J/cm 2 in a stoichiometric film. The low damage performance films also have an over three times higher damage density at fluences above initiation. Coupled with Monte Carlo simulations, we reveal that sub-stoichiometry is primarily attributed to preferential removal of oxygen during film deposition by the bombardment of energetic reflected argon neutrals. The resulting oxygen deficiencies create the sub-bandgap states which facilitate the strong laser energy coupling and reduce the resistance to laser-induced damage in the hafnia single layer films.

36 MATERIALS SCIENCE↗
NASA NTRS1985

Electron temperature and average density in spherical laser-produced plasmas - Ultraviolet plasma spectroscopy

The average values of the electron temperature Te and the electron density Ne in the corona plasmas of spherically irradiated high-Z targets have been estimated. Targets composed of the elements Cu through Br, Rb, and Mo were irradiated using the fundamental (1.06 microns) and the frequency-tripled (351 nm) output of the Omega laser system. Spectra were recorded in the wavelength region 15-200 A. Using various extreme ultraviolet spectroscopic techniques, it is found that for the case of a Mo plasma produced by frequency-tripled laser irradiation, Te = 2600 + or - 600 eV and Ne is greater than 6 x 10 to the 20th/cu cm. This is consistent with a 'flux limit' smaller than 0.1. The estimated values of Te and Ne are lower in the corona plasmas produced using the fundamental (1.06 micron) irradiation.

Goldsmith, S.↗
NASA NTRS1985

Laser Schlieren and ultraviolet diagnostics of rocket combustion

A low pressure oxygen/hydrogen turbine drive combustor hot-fire test series was conducted on the Turbine Drive Combustor Technology Program. The first objective was to gather data on an axisymmetric combustion system to support anchoring of a new combustion/fluid dynamics computer code under development on the same contract. The second objective was to gain insight into low mixture ratio combustion characteristics of coaxial injector elements.

Fisher, S. C.↗
NASA NTRS1985

Ultraviolet-excimer laser-based incoherent Doppler lidar system

The topics covered include the following: principles of Doppler measurements, laser backscatter, eye safety, demonstration concepts, the wavelength-meter, the interferometer detector, return signal model, and comparison of incoherent and coherent lidars.

Mcdermid, I. Stuart↗
DOE OSTI2023

Self-consistent integrated modeling of combined hybrid discharge-laser produced plasma devices for extreme ultraviolet metrology

Discharge- and laser-produced plasma (DLPP) devices are being used as light sources for extreme ultraviolet (EUV) generation. A key challenge for both, DPP and LPP, is achieving sufficient brightness to support the throughput requirements of nanometrology tools. To simulate the environment of a hybrid DLPP device and optimize the EUV output, we have developed an integrated HEIGHTS-DLPP computer simulation package. The package integrates simulation of two evolving plasmas (DPP and LPP) and includes modeling of a set of integrated self-consistent processes: external power source and plasma energy balance, plasma resistive magnetohydrodynamics, plasma heat conduction, detailed radiation transport (RT), and laser absorption and refraction. We simulated and optimized DLPP devices using Xe gas as a target material. We synchronized the external circuit parameters, chamber gas parameters, and laser beam temporal and spatial profiles to achieve maximum EUV output. The full 3D Monte Carlo scheme was integrated for detailed RT and EUV output calculations in Xe using more than 3600 spectral groups. The modeling results are in good agreement with Julich Forschungszentrum experimental data. Theoretical models, developed and integrated into the HEIGHTS package, showed wide capabilities and flexibility. In conclusion, the models and package can be used for optimization of the experimental parameters and settings, investigation of DLPP devices with complex design, analyzing the impact of integrated spatial effects and working timeline arrangement on the final EUV output, and EUV source size, shape, and angular distribution.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗