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The FIRST/HIFI mission allows for the local oscillator frequency multiplier chains to be cooled to 120 - 150 K in order to increase available output power. This paper will discuss the implication of cooling on GaAs based planar Schottky diode varactors for flight applications.
A tunerless 1.2 THz waveguide frequency tripler using Schottky planar varactor diodes has been designed, fabricated and tested.
A novel all-planar quasi-optical schottky varactor diode frequency doubler has been fabricated and has produced more than 1 mW of output power at 600 GHz with an approximately 2 percent conversion efficiency.
A theoretical comparison of various low and high order multipliers for 200 GHz and 1 THz has been carried out. Novel diodes including single barrier varactors, barrier-intrinsic-n(+)diodes and high electron mobility varactors are shown to have excellent theoretical performance, comparable or better than the conventional Schottky varactors for single and double diode frequency multipliers at millimeter and submillimeter wavelengths, whereas quantum well diodes, since they suffer from high resistive losses, are shown to be less attractive. In comparison to the conventional Schottky varactor, these new diodes have some potential advantages in their characteristics such as a stronger nonlinearity or a special symmetry. For future optimization some general comments on these advantages as well as other factors affecting multiplication are given.
Thin film interconnect patterns developed for three hybrid satellite resistor, diode, and transistor circuit applications
Diode-iris controlled waveguide slot radiators
Theoretical work on Single Barrier Varactor (SBV) diodes, indicate that the efficiency for a multiplier has a maximum for a considerably smaller capacitance variation than previously thought. The theoretical calculations are performed, both with a simple theoretical model and a complete computer simulation using the method of harmonic balance. Modeling of the SBV is carried out in two steps. First, the semiconductor transport equations are solved simultaneously using a finite difference scheme in one dimension. Secondly, the calculated I-V, and C-V characteristics are input to a multiplier simulator which calculates the optimum impedances, and output powers at the frequencies of interest. Multiple barrier varactors can also be modeled in this way. Several examples on how to design the semiconductor layers to obtain certain characteristics are given. The calculated conversion efficiencies of the modeled structures, in a multiplier circuit, are also presented. Computer simulations for a case study of a 750 GHz multiplier show that InAs diodes perform favorably compared to GaAs diodes. InAs and InGaAs SBV diodes have been fabricated and their current vs. voltage characteristics are presented. In the InAs diode, was the large bandgap semiconductor AlSb used as barrier. The InGaAs diode was grown lattice matched to an InP substrate with InAlAs as a barrier material. The current density is greatly reduced for these two material combinations, compared to that of GaAs/AlGaAs SBV diodes. GaAs based diodes can be biased to higher voltages than InAs diodes.
Frequency multiplication circuits, examining effects of short-term stability on oscillator system
We report on the design and performance of a fix-tuned x2x 3x 3 frequency multiplier chain that covers 1.55-1.75 THz. The chain is nominally pumped with 100 mW at W-band. At 120 K the measured output power is larger than 4 (mu)W across the band with a peak power of 100 (mu) W at 1.665 THz. A similar chain operated at room temperature produced a peak power of 21 (mu)W. These power levels now make it possible to deploy multipixel heterodyne imaging arrays in this frequency range.
We report on a room temperature 2.5 to 2.7 THz electronic source based on frequency multipliers. The source utilizes a cascade of three frequency multipliers with W-band power amplifiers driving the first stage multiplier. Multiple-chip multipliers are utilized for the two initial stages to improve the power handling capability and a sub-micron anode is utilized for the final stage tripler. Room temperature measurements indicate that the source can put out a peak power of about 14 microwatts with more than 4 microwatts in the 2.5 to 2.7 THz range.
Developments reported in varactor multipliers, crystal mixers, and diodes for microwave application
All-solid-state local oscillators in the terahertz frequency range are especially needed for space-borne radio astronomy and remote sensing of the atmosphere. Because solid-state oscillators cannot yet produce the necessary local oscillator power at submillimeter wavelengths, frequency multipliers are needed. So far, submillimeter-wave frequency multipliers are mainly based on a whisker-contacted Schottky diode as the nonlinear element. This paper discusses the multiplier theory and tools for analysis and design of millimeter- and submillimeter-wave multipliers. Experimental work is reviewed. The Schottky diode model at submillimeter frequencies, use of Schottky multiplier chains versus direct higher-order multipliers, and the effect of cooling on Schottky diode multipliers are discussed. Alternative diodes such as the high electron mobility varactor, the barrier-intrinsic n(+) diode, the barrier-n-n(+) diode, the quantum well diode, and the single barrier varactor are discussed, with attention also given to their potential as submillimeter frequency multipliers.
Monolithic diode grids were fabricated on 2-cm square gallium-arsenide wafers in a proof-of-principle test of a quasi-optical varactor millimeter-wave frequency multiplier array concept. An equivalent circuit model based on a transmission-line analysis of plane wave illumination was applied to predict the array performance. The doubler experiments were performed under far-field illumination conditions. A second-harmonic conversion efficiency of 9.5 percent and output powers of 0.5 W were achieved at 66 GHz when the diode grid was pumped with a pulsed source at 33 GHz. This grid had 760 Schottky-barrier varactor diodes. The average series resistance was 27 ohms, the minimum capacitance was 18 fF at a reverse breakdown voltage of -3 V. The measurements indicate that the diode grid is a feasible device for generating watt-level powers at millimeter frequencies and that substantial improvement is possible by improving the diode breakdown voltage.
Monolithic diode frequency multiplier arrays, including barrier-N-N(+) (BNN) doubler, multi-quantum-barrier-varactor (MQBV) tripler, Schottky-quantum-barrier-varactor (SQBV) tripler, and resonant-tunneling-diode (RTD) tripler arrays, have been successfully fabricated with yields between 85 and 99 percent. Frequency doubling and/or tripling have been observed for all the arrays. Output powers of 2.4-2.6 W (eta = 10-18 percent) at 66 GHz with the BNN doubler and 3.8-10 W (eta = 1.7-4 percent) at 99 GHz with the SQBV tripler have been achieved.
Schottky varactor frequency multipliers are used to generate local oscillator power at millimeter and submillimeter wavelengths. The equivalent circuit of the Schottky varactor contains a junction capacitance, a junction conductance, a series resistance and a model for electron velocity saturation. A millimeter wavelengths the equivalent circuits is affected by the edge effects, which are due to the small-area circular anode. The correction factors due to the edge effect for the junction capacitance and for the series resistance are available in the literature. In this work the electron velocity saturation is modeled by limiting the velocity of the transition front between the depleted and undepleted layer. By using this model the maximum current of the diode is given by the actual area of the transition front between depleted and undepleted layers, and is therefore related to the capacitance correction factor. The new model has been tested by analyzing a two diode balanced doubler for 160 GHz presented earlier in the literature. The agreement between the theoretical results and the measurements is excellent. The new diode model is useful in optimization of varactors for high millimeter and submillimeter wave frequencies.
The efficiency of the Schottky diode multiplier can be increased by cooling the diode to 77 K. The main reason for better efficiency is the increased mobility of the free carriers. Because of that the series resistance decreases and a few dB higher efficiency can be expected at low input power levels. At high output frequencies and at high power levels, the current saturation decreases the efficiency of the multiplication. When the diode is cooled the maximum current of the diode increases and much more output power can be expected. There are also slight changes in the I-V characteristic and in the diode junction capacitance, but they have a negligible effect on the efficiency of the multiplier.
Two reports present further detailed information about odd-harmonic frequency-multiplier devices described in "Barrier/n/n+ Varactor Frequency Multipliers" (NPO-18428). Devices comprise Schottky-barrier/n/n+ diodes in planar back-to-back configuration.
GaAs Schottky barrier varactors with a cutoff frequency of 800 GHz are used in a balanced diode-type parametric amplifier operating with a signal frequency at 7.5 GHz. The room-temperature parameters of the amplifier are a gain of 15 dB, a bandwidth of 500 MHz, and an excess noise temperature of 63 K (a noise figure of 0.86 dB).