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Results for “VOLTAGE AMPLIFIER”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
NASA NTRS2010

Cross-differential amplifier

A cross-differential amplifier is provided. The cross-differential amplifier includes an inductor connected to a direct current power source at a first terminal. A first and second switch, such as transistors, are connected to the inductor at a second terminal. A first and second amplifier are connected at their supply terminals to the first and second switch. The first and second switches are operated to commutate the inductor between the amplifiers so as to provide an amplified signal while limiting the ripple voltage on the inductor and thus limiting the maximum voltage imposed across the amplifiers and switches.

Hajimiri, Seyed-Ali↗
NASA NTRS2011

Cross-differential amplifier

A cross-differential amplifier is provided. The cross-differential amplifier includes an inductor connected to a direct current power source at a first terminal. A first and second switch, such as transistors, are connected to the inductor at a second terminal. A first and second amplifier are connected at their supply terminals to the first and second switch. The first and second switches are operated to commutate the inductor between the amplifiers so as to provide an amplified signal while limiting the ripple voltage on the inductor and thus limiting the maximum voltage imposed across the amplifiers and switches.

Hajimiri, Seyed-Ali↗
NASA NTRS2013

Cross-differential amplifier

A cross-differential amplifier is provided. The cross-differential amplifier includes an inductor connected to a direct current power source at a first terminal. A first and second switch, such as transistors, are connected to the inductor at a second terminal. A first and second amplifier are connected at their supply terminals to the first and second switch. The first and second switches are operated to commutate the inductor between the amplifiers so as to provide an amplified signal while limiting the ripple voltage on the inductor and thus limiting the maximum voltage imposed across the amplifiers and switches.

Hajimiri, Seyed-Ali↗
NASA NTRS1996

Enhancement of High-Speed Infrared Array Electronics (Center Director's Discretionary Fund)

A state-of-the-art infrared detector was to be used as the sensor in a new spectrometer-camera for astronomical observations. The sensitivity of the detector required the use of low-noise, high-speed electronics in the system design. The key component in the electronic system was the pre-amplifier that amplified the low voltage signal coming from the detector. The system was designed based on the selection of the amplifier and that was driven by the maximum noise level, which would yield the desired sensitivity for the telescope system.

Sutherland, W. T.↗
NASA NTRS2007

Multiloop Rapid-Rise/Rapid Fall High-Voltage Power Supply

A proposed multiloop power supply would generate a potential as high as 1.25 kV with rise and fall times <100 s. This power supply would, moreover, be programmable to generate output potentials from 20 to 1,250 V and would be capable of supplying a current of at least 300 A at 1,250 V. This power supply is intended to be a means of electronic shuttering of a microchannel plate that would be used to intensify the output of a charge-coupled-device imager to obtain exposure times as short as 1 ms. The basic design of this power supply could also be adapted to other applications in which high voltages and high slew rates are needed. At the time of reporting the information for this article, there was no commercially available power supply capable of satisfying the stated combination of voltage, rise-time, and fall-time requirements. The power supply would include a preregulator that would be used to program a voltage 1/30 of the desired output voltage. By means of a circuit that would include a pulse-width modulator (PWM), two voltage doublers, and a transformer having two primary and two secondary windings, the preregulator output voltage would be amplified by a factor of 30. A resistor would limit the current by controlling a drive voltage applied to field-effect transistors (FETs) during turn-on of the PWM. Two feedback loops would be used to regulate the high output voltage. A pulse transformer would be used to turn on four FETs to short-circuit output capacitors when the outputs of the PWM were disabled. Application of a 0-to-5-V square to a PWM shut-down pin would cause a 20-to-1,250-V square wave to appear at the output.

Bearden, Douglas↗
NASA NTRS2009

Improved-Bandwidth Transimpedance Amplifier

The widest available operational amplifier, with the best voltage and current noise characteristics, is considered for transimpedance amplifier (TIA) applications where wide bandwidth is required to handle fast rising input signals (as for time-of-flight measurement cases). The added amplifier inside the TIA feedback loop can be configured to have slightly lower voltage gain than the bandwidth reduction factor.

Chapsky, Jacob↗
NASA NTRS2009

A Mathematical Model of a Simple Amplifier Using a Ferroelectric Transistor

This paper presents a mathematical model characterizing the behavior of a simple amplifier using a FeFET. The model is based on empirical data and incorporates several variables that affect the output, including frequency, load resistance, and gate-to-source voltage. Since the amplifier is the basis of many circuit configurations, a mathematical model that describes the behavior of a FeFET-based amplifier will help in the integration of FeFETs into many other circuits.

Sayyah, Rana↗
NASA NTRS2009

Performance of the THS4302 and the Class V Radiation-Tolerant THS4304-SP Silicon Germanium Wideband Amplifiers at Extreme Temperatures

This report discusses the performance of silicon germanium, wideband gain amplifiers under extreme temperatures. The investigated devices include Texas Instruments THS4304-SP and THS4302 amplifiers. Both chips are manufactured using the BiCom3 process based on silicon germanium technology along with silicon-on-insulator (SOI) buried oxide layers. The THS4304-SP device was chosen because it is a Class V radiation-tolerant (150 kRad, TID silicon), voltage-feedback operational amplifier designed for use in high-speed analog signal applications and is very desirable for NASA missions. It operates with a single 5 V power supply [1]. It comes in a 10-pin ceramic flatpack package, and it provides balanced inputs, low offset voltage and offset current, and high common mode rejection ratio. The fixed-gain THS4302 chip, which comes in a 16-pin leadless package, offers high bandwidth, high slew rate, low noise, and low distortion [2]. Such features have made the amplifier useful in a number of applications such as wideband signal processing, wireless transceivers, intermediate frequency (IF) amplifier, analog-to-digital converter (ADC) preamplifier, digital-to-analog converter (DAC) output buffer, measurement instrumentation, and medical and industrial imaging.

Patterson, Richard L.↗
NASA NTRS1980

Active notch filter network with variable notch depth, width and frequency

An active notch filter having independently adjustable notch frequency, width, and depth is provided by three equal capacitors connected in series with an operational amplifier (connected in a voltage follower configuration), a potentiometer across the series connected capacitors for notch depth adjustment, and a potentiometer (for notch frequency connected across the center capacitor); with its tap connected to receive a voltage feedback signal from a variable voltage divider comprised of another potentiometer for notch width. Adjusting the voltage dividing potentiometer will independently set the notch width, and adjusting the tap on the potentiometer across the center capacitor will independently adjust the notch frequency of the filter. A second operational amplifier connected in a voltage follower configuration may be used to connect the voltage divider output to the adjustable tap of the potentiometer across the center capacitor.

Black, J. M.↗
DOE OSTI2024

Understanding the temperature and humidity dependence of the SiPM characteristics

A miniature version of the ICAL experiment at the India-based Neutrino Observatory, the mini-ICALis in operation at the IICHEP, Madurai. The commissioning work of a Cosmic Muon Veto detector (CMVD)on top of the mini-ICAL is continued using extruded plastic scintillators with embeddedWLS fibers and the SiPM as a photo-transducer. The CMVD is being built to study thefeasibility of a cosmic muon veto for a shallow-depth neutrino experiment. The SiPM is calibratedusing an ultrafast LED driver andthe same calibration techniques will be used during the data taking period with a simplified LED in thesame readout PCB. An experimental setup wasdesigned to characterise the SiPMs in a temperature controlled environment. The readout electronicsinvolves trans-impedance amplifiers and a voltage followers of combined gain 1.24 mV/$\mu$A and adigital storage oscilloscope for the data collection with a minimal distortion of SiPM signal.Various characteristics of the Hamamatsu SiPM (S13360-2050VE), e.g. signal shape, optically correlatedand uncorrelated noise, recovery time etc were studied as a function of $V_{ov}$, number of photoelectrons,the ambient temperature and the humidity. This paper will cover the details of those results.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
NASA NTRS1977

Foldback current-limiting for hybrid regulator

Technique utilizes operational high gain amplifier, which greatly reduces temperature sensitivity of short circuit current, to amplify and subtract voltage across current sensing resistor from regulated output voltage. Small current sensing resistor may be used to eliminate power loss problem found in conventional circuits.

Crider, C. H.↗
NASA NTRS1977

Deflection amplifier for image dissectors

Balanced symmetrical y-axis amplifier uses zener-diode level shifting to interface operational amplifiers to high voltage bipolar output stages. Nominal voltage transfer characteristic is 40 differential output volts per input volt; bandwidth, between -3-dB points, is approximately 8 kHz; loop gain is nominally 89 dB with closed loop gain of 26 dB.

Salomon, P. M.↗
NASA NTRS1980

Solar cell angular position transducer

An angular position transducer utilizing photocells and a light source is disclosed. The device uses a fully rotatable baffle which is connected via an actuator shaft to the body whose rotational displacement is to be measured. The baffle blocks the light path between the light source and the photocells so that a constant semicircular beam of light reaches the photocells. The current produced by the photocells is fed through a resistor, a differential amplifier measures the voltage drop across the resistor which indicates the angular position of the actuator shaft and hence of the object.

Sandford, M. C.↗
NASA NTRS1982

Automatic Calibration Systems

A continuous requirement exists for calibration and environmental testing of instruments in use at multitude of test facilities at Langley Research Center. Brief summarizes several automated systems available for calibration of research instruments to include: six-component balance, multimeter, amplifier, pyrometer, voltage-controlled oscillator, pressure transducer and accelerometer.

Ferris, A. T.↗
NASA NTRS1982

Harmonic analysis approach to the 'TunneLadder' - A modified Karp circuit for millimeter-wave TWTA's

A field approach to the summed harmonic analysis of the TunneLadder structure, or modified forward-wave Karp circuit, is developed by combining TM(01) and TE(11) modes. Results suggest the suitability of this structure as a high-impedance, about 1-% bandwidth circuit, millimeter-wave forward-wave-type amplifier that is voltage tunable over about a 5-% frequency range and has excellent power handling ability. Theory gives good agreement with experimental results obtained by Karp in omega-beta dispersion and predicts qualitatively the appearances of the antisymmetric mode discussed and of the so called Hightron mode that was discussed earlier in White, Enderby and Birdsall (1964), and Enderby (1964), in addition to the desired symmetric mode.

Kosmahl, H. G.↗
NASA NTRS1984

Infrared-Responsive Monolithic MOS Circuit

Lead chalcogenide photoresistors integrated with FET amplifiers. Circuit combines voltage divider containing lead chalcogenide photoresistor with FET source follower. Source and drain of FET p-doped regions in underlying n-type silicon wafer. All other structures formed at or deposited above original surface plane of wafer.

Jhabvala, Muzban D.↗